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Electrical properties of pulsed laser-deposited SrxBiyTa2O9 thin films on Bi/Sr ratios |
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| Authors: | Jong-Ho ParkChung-Sik Kim Byung-Chun Choi Jung-Hyun JeongByung Kee Moon Hyo-Jin SeoIll-Won Kim Jin-Soo Kim |
| Institution: | a Basic Science Research Institute, Pukyong National University, Busan 608-737, South Korea b Department of Physics, Pukyong National University, Busan 608-737, South Korea c Department of Physics, Ulsan University, Ulsan 680-749, South Korea d Institute of Basic Science, Ulsan University, Ulsan 680-749, South Korea |
| Abstract: | The dependence of the electrical properties of SrxBiyTa2O9 thin films on the (Bi/Sr ratio 1.6, 2.3, 2.8, 3.4) has been investigated. The SrxBiyTa2O9 ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates using the pulsed laser deposition method. Saturation polarization (Pst) and coercive field (2Ec) depend on the Bi/Sr ratio. Pst increases while Ec decreases with an increase in Bi/Sr ratio. Atomic Force Microscopy images show that the grain size grows with increasing Bi/Sr ratio. It is observed that the impedance behavior in SrxBiyTa2O9 thin film, conforms to the Constant Phase Element (CPE) model. It is believed that the diffuse charges at the grain boundary build up a surface polarization because the impedance behavior close to pure capacitor with grain size increased. |
| Keywords: | 77 22 Gm 77 84 Dy 66 10 Ed |
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