强耦合表面激子内部激发态的性质

采用线性组合算符和幺正变换方法,研究极性晶体中强耦合表面激子内部激发态的性质.计算了表面激子的激发态能量、激发能量和平均声子数.     

温度和极化子效应对准二维强耦合激子基态的影响

采用Huybrechts线性组合算符和Lee-Low-Pines变换法研究了温度和极化子效应对量子阱中激子与界面光学声子强耦合又与体纵光学声子弱耦合体系基态的影响,推导出激子基态的诱生势和基态能量的移动的表达式. 以AgCl/AgBr量子阱为例进行了数值计算,结果表明,由激子-界面光学声子强耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而增大,而由激子-体纵光学声子弱耦合所产生的激子基态的诱生势和基态能量的移动随温度的升高而减小. 关键词： 量子阱 强耦合激子 极化子效应 温度依赖性     

Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks

We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results.     

Influence of the Wavefunction Distribution on Exciton Dissociation in Electric Field

We show that the dissociation threshold of an exciton, a bound electron-hole pair, by an electric field is mainly determined by its energy: as expected, the dissociation voltage decreases with increasing exciton energy. However, within the multiplet of states belonging to a particular principal quantum number n, the dissociation voltage rises with increasing state energy, in contrast to the expectations based on energy arguments. This behavior is demonstrated for the yellow exciton states of Cu₂O and is attributed to the distribution of the wavefunction in the potential landscape, where the lower (higher) lying state in the multiplet is shifted away (towards) the tunnel barrier.     

Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects

Considering the strong built-in electric field (BEF) effects and large exciton–phonon interactions, we investigate the exciton states confined in an InGaN/GaN single quantum well (QW) by using the Lee–Low–Pines variational method. We find that the exciton state modification caused by the exciton–phonon interactions is remarkable. The exciton energy shift due to exciton–phonon interactions increases monotonically if the well width increases. With increasing the In fraction, the exciton energy shift firstly increases to a maximum, then decreases. The BEF has a significant influence on the exciton states in a QW with large well width. The physical reasons have been analyzed in detail. Good agreement for the zero-phonon peak energies and the Huang–Rhys factor has been obtained between our numerical results and the corresponding experimental measurements.     

Analytical Ground-State of an Exciton Trapped in a Circular Parabolic Quantum Dot in the Presence of a Magnetic Field

The quasi-exact properties of an exciton are investigated theoretically in the presence of an external magnetic field using the effective-mass approach in GaAs parabolic quantum dot. The energy spectrum is obtained analytically as a function of the dot radius, interaction strength and magnetic field. It is established that, a steady bound state of an exciton in the ground state exists under the effect of a strong magnetic field; also I noticed that the exciton binding energy decreases by increasing both the radius of the dot and the magnetic field strength and the reduction becomes pronounced for larger dots. As expected, it has been found that the exciton total energy decreases with increasing the size of the dot and it enhances by increasing the magnetic field. It appears that the exciton total energy strongly depends on the magnetic field for dots with big size. The magnetic field effect on the exciton size also has been studied. It is shown that the increase in the magnetic field leads to a reduction in the exciton size; due to magnetic field confinement, while the size of an exciton reach its bulk limit as the dot size increases. Moreover, it is shown that, if the dot radius is sufficiently large the oscillator strength saturates and it becomes insensitive to the magnetic field while the increase in the magnetic field gradually weakened the oscillator strength. I have calculated the ground-state distribution for both the electron and the hole. It is found that the localization of the electron/hole increases in the presence of a magnetic field. Moreover, the ground-state optical-absorption intensity is investigated. Finally, the dependence of the lowest five states of an exciton on both the dot radius and the magnetic field are discussed.

     

Energy scaling for multi-exciton complexes in semiconductor quantum dots

The ground state properties of an multi-exciton (ME) complex localized in a nanoscale semiconductor quantum dot (QD) have been studied. The calculations have been performed using the envelope function approximation for electron and hole motion in the QD. The many-body quantum mechanical treatment of the electron-hole dynamics was done within the Density Functional Theory approach. The ground state energy dependencies upon QD radius, number of electron-hole pairs, QD dielectric function and effective masses of electron and holes have been analyzed. It is demonstrated that when multi-exciton complex is strongly localized within the QD, the physical properties of the system are determined by a single parameter, the ratio of QD and free exciton radii, and its binding energy is given by the function of this parameter multiplied by the binding energy of an isolated exciton in bulk semiconductor.     

Exciton eigenstates and biexciton interaction energies in a spherical core/shell semiconductor hetero-nano structure

The exciton eigenstates and biexciton interaction energies in a spherical core–shell hetero-nano structure in the type II and the quasi-type II carrier localization regimes have been analyzed. For the analysis, we have evaluated the electron–hole overlap integral, the binding energy of exciton ground state, and the interaction energy of bi-exciton ground state in the structure. In the evaluation, the first order perturbation approach has been employed, where the direct Coulomb interaction energy, the surface polarization energy and the dielectric solvation energy are included. Our results show that the exciton eigenenergies and exciton–exciton interaction energy strongly depend on the choice of materials on which both the dielectric constants and the electron and hole effective masses rely.     

Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields

Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and spatially indirect excitons in GaAs/AlaAs superlattices, with different widths of the electron and hole minibands, located in a high magnetic field perpendicular to the heterolayers. It is found that the ground state of the indirect excitons formed by electrons and holes and spatially separated between neighboring quantum wells lies between the ls ground state of the direct excitons and the continuum threshold for dissociated exciton states in the minibands. Indirect excitons in superlattices have a significant oscillator strength when the binding energy of the exciton exceeds the order of the width of the resulting miniband. The behavior of the binding energy of direct and indirect heavy hole excitons during changes in the tunneling coupling between the quantum wells is established. It is shown that a strong magnetic field, which intensifies the Coulomb interaction between the electron and hole in an exciton, weakens the bond in a system of symmetrically bound quantum wells. The spatially indirect excitons studied here are analogous to first order Wannier-Stark localized excitons in superlattices with inclined bands (when an electrical bias is applied), but in the present case the localization is of purely Coulomb origin. Zh. éksp. Teor. Fiz. 112, 1106–1118 (September 1997)     

Non-radiative ionization of perturbation centres by means of excitons in semi-conducting and dielectric crystals

Non-radiative ionization of a perturbation centre formed by an electron trapped in the Coulomb field of the perturbation by means of excitons of large radius in semi-conducting and dielectric crystals is theoretically investigated. It is shown that such non-radiative ionization may occur by two processes: the direct non-radiative transfer of the excitation energy from the exciton to the electron of the perturbation and by exchange non-radiative ionization whereby the electron on the perturbation recombines non-radiatively with the hole in the exciton and the electron of the exciton with the energy released during this recombination passes to the ionized state of the perturbation.The corresponding probabilities per sec and recombination coefficients are calculated as a function of the concentration of perturbation centres and the type of exciton according to its optical origin. The result is used for a theoretical estimate of the influence of perturbation centres of the given type on the optical life-time of the exciton.     

Above-barrier excitons: First magnetooptic investigation

An above-barrier localized excitonic state in a Bragg confining semiconductor superstructure based on an (In, Ga)As/GaAs heterosystem is observed experimentally. A sharp excitonic resonance corresponding to the interference mechanism of localization is observed in the absorption spectrum of this structure at 1.548 eV, i.e., 33 meV above the energy of a bulk exciton in GaAs. The oscillator strength of the above-barrier exciton is twice that of the main excitonic state in the system, and the above-barrier exciton gives rise to sharp Landau oscillations in the magnetoabsorption spectra. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 10, 727–732 (25 May 1999)     

Quantum effects in the interaction of the exciton with a leaky quasi-mode cavity

We have studied quantum effects in the interaction of the exciton with a leaky quasi-mode cavity field. When the exciton is initially prepared in a superposition state which exhibits holes in its photon-number distribution, whereas the cavity field initially is in the vacuum state, it is found that there exists an energy exchange between the exciton and the cavity field. The exciton and the cavity field may exhibit sub-Poissonian distributions and quadrature squeezings. It is shown that there does not exist a violation of the Cauchy-Schwartz inequality, which means that the correlation between the exciton and the cavity field is classical. Received 25 November 2000 and Received in final form 1st January 2001     

Edge excitons in a 2D topological insulator in a magnetic field

Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.     

Oxygen-related band gap state in single crystal rubrene

A molecular exciton signature is established and investigated under different ambient conditions in rubrene single crystals. An oxygen-related band gap state is found to form in the ambient atmosphere. This state acts as an acceptor center and assists in the fast dissociation of excitons, resulting in a higher dark and photoconductivity of oxidized rubrene. The band gap state produces a well-defined photoluminescence band at an energy 0.25 eV below the energy of the 0-0 molecular exciton transition. Two-photon excitation spectroscopy shows that the states are concentrated near the surface of naturally oxidized rubrene.     

半导体中光的相干传播理论(Ⅱ)

本文是关于半导体中光的相干传播理论的第二部分。考虑到电子空穴间的相互作用,我们讨论了光波与半导体的相互作用,得到了描述光激发电子空穴极化波的方程。我们指出只有在激发比较弱时,这组方程才可近似为一组线性方程,电子空穴极化波才可以看作玻色场。本文还着重讨论了分立的激子谱线的相干激发,证明了它可以近似等效于一个二能级系统的激发,等效的二能级系统的能级差和激发的程度有关,等效的二能级“原子”的“浓度”由激子波函数的性质决定。 关键词：     

Tunneling and reflection of an exciton incident upon a quantum heterostructure barrier

We investigate, in one spatial dimension, the quantum mechanical tunneling of an exciton incident upon a heterostructure barrier. We model the relative motion eigenstates of the exciton using a form of the one-dimensional hydrogen atom which avoids difficulties previously associated with 1D hydrogenic states. We obtain probabilities of reflection and transmission using the method of variable transmission and reflection amplitudes. Our calculations may be broadly divided into two sets. In the first set, we consider general qualitative aspects of exciton tunneling, such as the effect of different effective masses for electrons and holes and a relative difference in electron and hole barrier strengths. The second set models the tunneling of an exciton in a GaAs/Al(x)Ga(1-x)As heterostructure. In these calculations we find that, for energies such that the two lowest exciton states are coupled, the probability spectrum for transition from the ground state to the first excited state is identical to that for transition from the first excited state to the ground state. In addition, narrow peaks in the probability spectrum for transition are observed across this energy range for low dopant concentration x. Other interesting phenomena correlated with these peaks in the transition probability are reported.     

Electronic structure and absorption spectrum of biexciton obtained by using exciton basis

We approach the biexciton Schrödinger equation not through the free-carrier basis as usually done, but through the free-exciton basis, exciton–exciton interactions being treated according to the recently developed composite boson many-body formalism which allows an exact handling of carrier exchange between excitons, as induced by the Pauli exclusion principle. We numerically solve the resulting biexciton Schrödinger equation with the exciton levels restricted to the ground state and we derive the biexciton ground state as well as the bound and unbound excited states as a function of hole-to-electron mass ratio. The biexciton ground-state energy we find, agrees reasonably well with variational results. Next, we use the obtained biexciton wave functions to calculate optical absorption in the presence of a dilute exciton gas in quantum well. We find an asymmetric peak with a characteristic low-energy tail, identified with the biexciton ground state, and a set of Lorentzian-like peaks associated with biexciton unbound states, i.e., exciton–exciton scattering states. Last, we propose a pump–probe experiment to probe the momentum distribution of the exciton condensate.     

Quantum Statistical Properties of the Exciton in a Leaky Quasi-Mode Cavity

We have studied quantum statistical properties of the exciton in a leaky quasi-mode cavity. It is shown that when the exciton is initially in a squeezed coherent state whereas cavity initially in a vacuum state, there is energy exchange between the exciton and cavity. Both the exciton and cavity may exhibit sub-Poissonian distribution and exist quadrature squeezing. Calculation shows that correlation between the exciton and cavity is classical, which implies that there is not the violation of the Cauchy-Schwartz inequality.     

Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band

Modifications of the exciton structure of the fundamental absorption edge in the GaAs crystals is experimentally studied at T = 1.7 K using the optical pumping at a photon energy that is significantly greater than the band gap. An increase in the amplitude of the fundamental state of the exciton is observed at a stable maximum energy. The dependence of the integral absorption on the pump intensity is interpreted in the framework of the concept of the excitonic polariton using the dissipative scattering of the exciton by free electrons that are generated by the pumping radiation. The constant of the electron-exciton interaction can be estimated with the aid of the solution to the inverse problem for initial pump levels. The integral absorption of the fundamental exciton state at liquid-helium temperatures can be used to characterize the purity of an epitaxial layer. The reasons for the lower saturation level of the integral absorption that is significantly less than the calculated level determined by the exciton oscillator strength need to be further studied.     

Quantum Statistical Properties of the Exciton in a Leaky Quasi-Mode Cavity

We have studied quantum statistical properties of the exciton in a leaky quasi-mode cavity. It is shown that when the exciton is initially in a squeezed coherent state whereas cavity initially in a vacuum state, there is energy exchange between the exciton and cavity. Both the exciton and cavity may exhibit sub-Poissonian distribution and exist quadrature squeezing. Calculation shows that correlation between the exciton and cavity is classical, which implies that there is not the violation of the Cauchy-Schwartz inequality.