高压下聚苯胺的结构和电性能研究

 以金刚石压腔高压装置为工具，用Ⅱ型金刚石作压砧兼红外窗口，对本征态聚苯胺进行了高压（0~8.4 GPa）就位红外光谱测试。结果表明：在4.8~5.2 GPa压力区间，代表醌环振动的吸收峰相对代表苯环振动的吸收峰变小，表明聚苯胺在此压力区间结构上发生了显著变化，且这种变化是不可逆的。聚苯胺的高压（0~14.5 GPa）电阻测量结果表明：当压力小于7.5 GPa时，电阻随压力升高而显著降低，据此认为聚苯胺为电子性导电物质；在7.5 GPa处电阻出现极小值，然后又缓慢升高，至10 GPa后基本不变。推测聚苯胺电阻极小值是由结构变化引起的。至于红外光谱与电阻测量结果反映聚苯胺结构变化的压力值不一致，可能是由于测试条件不同所致。     

钨合金的超声测量及力学参量估算

 利用两面顶压机和六面顶压机作为压力装置，分别对93钨合金材料进行了高压超声测量。测得了93钨合金材料在常态下的横、纵波声速及在0~3 GPa压力范围内的纵波声速随压力的变化关系。测量结果为：在常温常压下，93钨合金的纵波声速为c_L＝5.135 km/s，横波声速为c_t＝2.987 km/s。纵波声速随压力变化的关系式为：c_L＝5.053+0.602p（GPa）。估算的93钨合金相关力学参量为：G＝157.4 GPa，E＝393.0 GPa，K＝260.2 GPa，λ＝155.3 GPa，μ＝157.4 GPa，ν＝0.248。经过对两种超声测量方法测量结果的比较及冲击波测量数据的验证，这些参数是可靠的。     

超镁铁质岩、榴辉岩和辉长岩中主要矿物的高压电阻率研究

 为了研究3~20 GPa压力范围内地幔物质的电阻率随压力变化的情况，选择了辉长岩、榴辉岩和二辉橄榄岩中的主要矿物：单斜辉石、拉长石、绿辉石、石榴石和顽辉石作研究对象，在DAC装置中测定其在不同压力下的电阻率。结果表明，在3~8 GPa压力区间，矿物的电阻率随压力增高而明显增大。超过8 GPa，电阻率受压力的影响减小，而辉石的电阻率随压力增高而不同程度地减小，在14~20 GPa压力范围内，顽辉石的电阻率再次随压力增高而明显增大，对其它矿物的影响不明显。在约400 km深处的地幔中出现的电导率突然上升，恰好发生在辉石电阻率与压力成负相关的压力范围内（12 GPa左右），这是否是一种巧合，将在以后研究。     

压力对金属玻璃Zr70Cu30晶化温度和激活能的影响

 在0~2 GPa压力范围内，通过测量电阻，研究了压力对金属玻璃Zr₇₀Cu₃₀晶化温度与激活能的影响，并探讨了晶化温度与激活能随压力变化时的相关性。     

高压下铁的电导率及X射线衍射研究

 用四点电极法及磁控溅射结合光刻集成电极的方法，测量了铁在25 GPa压力下的电阻随压力的变化；用微区X射线衍射仪原位测量了铁在25 GPa压力下晶胞参数随压力的变化关系。实验结果表明，铁在13.7 GPa时发生相变，由体心立方相转变为六方密堆相，在18.1 GPa时相变结束。利用高压下铁的电阻数据，结合X射线衍射结果，推导出铁的电导率随压力的变化关系。     

加压对110 K Bi-Pb-Sr-Ca-Cu-O单相样品超导电性的影响

 在静压0~1 GPa（10 kbar）范围内，80~300 K温区，用测量电阻的方法，研究了Bi-Pb-Sr-Ca-Cu-O（起始转变温度T_c^on=110 K，终止转变温度T_c^fi=106 K）的起导电性。观察到超导临界温度T_c随压力以dT_c/dp=2K/GPa的速率增高，而在不同压力下的斜率d logR/dp却保持不变。     

名义成分为La1.0Ca2.0Mn2O7锰氧化物的压阻效应

 利用低温高压电阻原位测量装置（自箝铍青铜活塞-圆筒式压砧），在0~1.05 GPa静水压力范围内，对以层状钙钛矿结构为主相、名义成分为La_1.0Ca_2.0Mn₂O₇的锰氧化物样品进行了压阻效应研究。实验观测到异常的压阻效应。在低温5~150 K范围内，压力为0.55 GPa时，样品呈现出高达40%的压阻效应，而且，金属-绝缘体相变温度在低压范围内随压力的增加而增加，但随着压力的进一步增加而减小。     

冲击压缩下铝、铜、钨的剪切模量和屈服强度与压力和温度的相关性

对铝、铜和钨在冲击压缩状态下的剪切模量和屈服强度的实验数据进行了综合分析，并与St einberg-Cochran-Guinan(SCG)模型的计算结果进行了比较，结果表明，铝在50 GPa、铜在1 00 GPa、钨在200 GPa冲击压力以内，三种材料的剪切模量和屈服强度随温度和压力的变化 趋势基本相似，即SCG模型的假设Y′_pY₀=G′_pG ₀,Y′_TY₀=G′_TG₀对这三种材料在上述冲击压力范围内近似成立，利用该模型可以较好地描述材料在冲击压缩 下的本构行为. 关键词： 剪切模量 屈服强度 压力 温度     

PbTe纳米晶高压热电性能的研究

 利用自建的400 t四柱双缸液压机,研究了PbTe纳米晶在0~0.8 GPa压力范围内热电性能随压力的变化。实验结果表明：PbTe纳米晶电导率随压力的增加而增加,而热电动势随压力的增加而减小,两者随压力的变化具有可逆性;PbTe纳米晶具有极高的热电动势,在常压下达到565 μV/K,在0.8 GPa压力下,材料的电导率为常压下的4倍,热电动势仅降低20%,功率因子则达到常压下的3倍。研究表明,高压能显著提高PbTe纳米晶的热电性能。利用第一性原理计算了0.4~4.0 GPa压力范围内材料的简约费米能级,计算结果与实验结果相吻合。     

冲击压缩下钨靶对514.5 nm激光的漫反射率

 在二级轻气炮上完成了一系列铜飞片平面碰撞钨靶的实验,并测量了钨靶在85~250 GPa的冲击压缩下,对波长514.5 nm入射激光的漫反射率。实验结果显示：冲击压缩使钨靶表面的漫反射能力降低,但不是单调下降的,并在165 GPa压力附近出现漫反射率相对增大的现象。     

Resistance anomaly and structural disorder in NiSi2 under high pressure

Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi₂ under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to −20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes −50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi₂ with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.     

Reentrant high-conduction state in CuIr2S4 under pressure

The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr₂S₄ are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.     

Conductivity of double-walled carbon nanotubes at pressures of up to 30 GPa

Results from experimental studies of the electrical resistance of double-walled carbon nanotubes (DWNTs) in conducting diamond high-Pressure chambers at pressures of up to 30 GPa and room temperature are presented. The effect pressure has on the structure of the outer and inner tubes is analyzed. Ranges of pressure are found in which the electrical resistance of DWNTs changes considerably.     

Structural phase transition in Bi2Te3 under high pressure

Structural change in Bi₂Te₃ under high pressure up to 16.6 GPa has been studied by powder x-ray diffraction. We observed two times of phase transitions at room temperature at the pressures of 8 and 14 GPa, respectively. According to our preliminary result on electrical resistance, it is reasonable to suppose that superconducting transition with T _c =2.8 K at the pressures of 10.2 GPa is observed in phase II. On the other hand, we found anomalies of the pressure dependences of lattice parameters and volume at around 2 GPa, which probably means the change in electrical structure on the Fermi surface.     

High pressure sintering behavior of polycrystalline diamond with tungsten

Polycrystalline diamond was investigated under high pressure and high temperature of 5.0 GPa and 1100–1500 °C in the presence of tungsten. In situ resistance measurements indicated that reactions between diamond and tungsten happened at about 960 °C. Phase analysis demonstrated that WC increased and meta-stability of W₂C decreased clearly at the higher temperature. It is clear from the characterization of the sintered body that the electrical resistance decreased and the density of specimens increased as the sintering temperature rose. The specimen sintered at 1500 °C has a homogeneous microstructure and good conductivity.     

On the possibility of a phonon mediated transport anomaly in MgB2 under compression

Results of electrical resistance measurements on MgB₂ at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E_2g phonon mode reveal that one of the closed Fermi sheets corresponding to the σ-band opens along the Γ-A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).     

The band gap and electrical resistivity of FeS2-pyrite at high pressures

The indirect energy gap and electrical resistivity of FeS₂-pyrite have been measured at high pressures and 300 K using optical absorption spectroscopy and electrical conductivity measurements. Absorption spectra extend to ∼28 GPa, while resistivity is determined to ∼34 GPa. The band gap of FeS₂ is indirect throughout this pressure range and decreases linearly with pressure at a rate of −1.13(9)×10⁻² eV/GPa. If this linear trend continues, FeS₂ is expected to metallize at a pressure of 80(±8) GPa. The logarithm of resistivity also linearly decreases with pressure to 14 GPa with a slope of −0.101(±0.001)/GPa. However, between 14 and 34 GPa, the logarithm of resistivity is nearly constant, with a slope of −0.011(±0.003)/GPa. The measured resistivity of pyrite may be generated predominantly by extrinsic effects.     

Effect of high pressure on the thermopower in gallium

The absolute thermopower and relative electrical resistance of gallium have been measured at room temperature and at a pressure increased up to 7 GPa. As the initial phase, all of the Ga phases retain the positive value of the thermopower. At 4 GPa, a phase transition has been revealed.     

Pressure-induced phase transitions in CaB6 by means of XRD and resistance measurement

High pressure behavior of CaB₆ with cubic crystal structure is investigated by means of energy dispersive X-ray diffraction and by employing in situ resistance measurement in a diamond anvil cell. Two newcome high pressure phase transitions are found with pressure ranging from ambient to 26 GPa. The first one at 12 GPa is a structural phase transition from CsCl-type structure to orthogonal structure, which is reflected by both the X-ray diffraction and the resistance variation. The other one at 3.7 GPa is suggested to be an electronic transition, which is observed only in resistance measurement. The diffraction pattern recovered while the pressure is released to 0 GPa with a pressure hysteresis over 11 GPa, which implies the reversibility of the two phase transitions. Bulk moduli of the cubic and orthogonal phases are estimated by fitting the data to a Brich-Murnaghan equation of state equal to 169.9 and 48.2 GPa, respectively.     

High-pressure thermoelectric characteristics of Bi2Te3 semiconductor with different charge carrier densities

The measurements of the absolute values of the thermopower and of the relative electrical resistance have been performed for n type Bi₂Te₃ under hydrostatic pressure up to 9 GPa at room temperature. Under pressures exceeding 5 GPa and up to the phase transition (at 7 GPa), the samples with the charge carrier density below 10^?19 cm^?3 exhibit an anomalous growth of the thermopower. For the purest sample (n = 10^?18 cm^?3), the thermopower is as high as +150 μV/K. The pressure dependence of the electrical resistance for n-Bi₂Te₃ does not exhibit any anomalies up to the pressure corresponding to the phase transition (7 GPa). Thus, the state with the giant thermoelectric efficiency is found in Bi2Te3 under pressure before the phase transition.