低维玻色－爱因斯坦凝聚的转变温度和基态占据数

研究了体系中粒子的第一激发态能量对低维玻色凝聚温度的影响,以及不同维度的空间中凝聚温度随总粒子数的变化关系.结果表明,随着粒子敷密度的增加,低维的凝聚温度比高维情形上升得快,体系的凝聚温度与第一激发态能量密切相关.同时计算表明,对于囚禁在GaAs量子阱中的激子气体,即使在无谐振势或幂指数等特殊外势的条件下,也可以在几个K0实现玻色-爱因斯坦凝聚.     

低维俘获原子的玻色-爱因斯坦凝聚中的有限粒子数效应

基于Thomas-Fermi近似,通过对配分函数的高温展开确定了体系的有效态密度，得到了在忽略相互作用下，低维受俘获原子玻色爱因斯坦凝聚的临界温度,并计算出了临界温度附近体系的比热容随温度的变化行为.研究结果表明：二维情况下，体系的比热容c正比于T²;而在一维情况下，c随温度呈线性增加. 关键词： 玻色-爱因斯坦凝聚 有限粒子数 低维束缚势 Thomas-Fermi近似     

三维光晶格中玻色凝聚气体基态波函数及干涉演化

基于Gross-Pitaevskii方程，运用有效化学势概念，研究了囚禁在组合势(由磁阱和三维光 晶格组成)中玻色凝聚气体在三维光晶格中的分布规律，并由此得到玻色凝聚气体的归 一化基态波函数.在取消组合势和仅取消光晶格而保留磁阱的两种情况下，运用传播子方 法求解出玻色凝聚气体密度分布的解析表达式.取消组合势后，理论计算所得到的玻色凝聚 气体聚随时间的演化规律与Greiner等的实验结果相一致.仅取消光晶格而保留磁阱时，研 究表明玻色凝聚气体的干涉模式呈现周期性的振荡行为.此外，在磁阱为各向异性的情况下 ， 关键词： 玻色凝聚气体 磁阱 光晶格 干涉模式     

相互作用对玻色气体热力学性质及稳定性的影响

根据由赝势法得到的非理想玻色气体的自由能和状态方程，研究了相互作用对凝聚温度的影响.从热力学角度揭示了存在引力作用时定压热容量、等温压缩系数、定压膨胀系数的反常热力学特性.研究了引力作用下玻色气体系统的不稳定性，给出了不稳定性的温度判据和粒子数密度判据. 关键词： 相互作用 玻色气体 热力学性质 不稳定性判据     

旋转受限相互作用玻色系统的相变温度及基态粒子占据率

利用局域密度近似(LDA)导出了简谐势阱中存在弱相互作用的旋转玻色气体发生玻色-爱因斯坦凝聚时的粒子数、相变温度和基态粒子占据率的解析表达式,探讨了粒子间相互作用对相变温度和基态粒子占据率的影响.计算表明,当粒子间的相互作用消失时,所有解析结果均能够与无相互作用的旋转理想玻色气体获得很好的一致.     

囚禁弱相互作用玻色气体的势场优化准则

根据Thomas-Fermi近似,在基于最小动量态上玻色-爱因斯坦凝聚的前提下,研究了囚禁弱相互作用玻色气体势场的最优化问题.导出了指数吸引势阱中有效势场和粒子数极限判据,粒子数给定时,可由此判据求出所需势场强度;势场强度给定时,可由此判据求出粒子数极限.根据吸引相互作用系统的稳定性以及求出的排斥相互作用的最大粒子数极限,结合有效势场判据,分别给出了囚禁吸引和排斥相互作用玻色气体时,势场强度的最佳取值范围. 关键词： 玻色-爱因斯坦凝聚 弱相互作用 粒子数极限 势场强度     

对热力学处理光子气体粒子数的一个注记

在热力学中,固定体积和温度的封闭系中的均匀光子气体具有如下性质:对平衡时的粒子数取确定值,非平衡时的粒子数变化.前者的化学势为零,后者的化学势非零.     

原子激射器的空间有效增益范围

求出了γ维空间中理想玻色气体的态密度,采用Thomas-Fermi近似,导出了γ维广义幂律势阱中粒子数密度的空间分布.在此基础上,求出了原子激射器的空间有效增益范围(即γ维势阱中玻色-爱因斯坦凝聚的空间有效范围),并对其产生影响的相关因素进行了讨论.     

光学腔中一维玻色-哈伯德模型的奇异超固相

利用密度矩阵重整化群计算了光学腔中一维无自旋玻色-哈伯德模型的基态.通过研究超流序、局域密度分布、二阶和三阶关联函数,发现该系统出现了超越平均场理论的两个奇异超固相.这两个超固相同时具备对角和非对角长程序,其中一个展现出包络形式的密度调制振荡,另一个展现出均匀的密度分布.另外,结合光场的超辐射序参量和腔内的平均光子数,发现奇异超固相与腔光场的涨落存在密切关系.该工作给出了光学腔内玻色哈伯德模型的超越平均场理论的新物理,并提供了探索光学腔内光与物质集体物态的完整计算方法.     

三维简谐势阱中玻色-爱因斯坦凝聚的边界效应

在定义特征长度的基础上,应用Euler–MacLaurin公式,研究了理想玻色气体在三维简谐势阱中玻色-爱因斯坦凝聚的边界效应.结果表明:粒子的凝聚分数由于有限尺度和有限粒子数效应而减小,修正的凝聚分数和凝聚温度由于边界效应存在一个极大值,选择优化的最佳势阱参数,可以有效提高凝聚分数和凝聚温度;热容量的跃变存在边界效应和粒子数效应,选择合理的势阱参数时,热容量的跃变存在一个极小值.导出了简谐势阱中有限理想玻色气体的状态方程,揭示了压强的各向异性(或各向同性)取决于简谐势频率的各向异性(或各向同性).     

Bose condensation of exciton polaritons in an optical microcavity

Two methods are considered for producing traps for exciton polaritons in an optical microcavity with an embedded quantum well. The first method for controlling polaritons consists in producing a polariton trap governed by the longitudinal confinement of photons. Traps of this type can be created using an optical microcavity with a variable width. In traps of the second type, the exciton confinement is ensured by a weak potential that is applied to a quantum well with excitons or when this well is subjected to an inhomogeneous deformation. The behavior of a two-component Bose condensate of photons and excitons is analyzed theoretically. The Bose condensate is described by the coupled system of equations of the Gross-Pitaevskii type. The approximate wave functions and the spatial profiles of coupled photon and exciton condensates are obtained.     

Polariton condensation with localized excitons and propagating photons

We estimate the condensation temperature for microcavity polaritons, allowing for their internal structure. We consider polaritons formed from localized excitons in a planar microcavity, using a generalized Dicke model. At low densities, we find a condensation temperature T(c) proportional, rho, as expected for a gas of structureless polaritons. However, as T(c) becomes of the order of the Rabi splitting, the structure of the polaritons becomes relevant, and the condensation temperature is that of a BCS-like mean-field theory. We also calculate the excitation spectrum, which is related to observable quantities such as the luminescence and absorption spectra.     

Femtosecond dynamics of secondary radiation formation from quantum well excitons

The time-resolved secondary emission of resonantly created excitons in GaAs quantum wells is studied using femtosecond up-conversion spectroscopy. The behaviour of the rise and decay of the secondary emission and reflectivity in quantum wells is strongly dependent upon the disorder at the interfaces, the exciton density and the temperature. In the case of low densities and temperatures the emission is independent of the exciton density and rises quadratically in time, in excellent agreement with recent theory for Rayleigh scattering from two-dimensional excitons subjected to disorder. These rise times are compared directly with times measured by time-integrated four-wave mixing (FWM). The comparison of the dynamics displayed in time-resolved secondary radiation and time-integrated FWM provide a clear understanding of the coherence properties of QW excitons in the first few picoseconds after excitation. High-contrast oscillations that are due to quantum beats between the heavy- and light-hole 1s-states are seen. The visibility decay at very low densities is long ps and is related to the action of potential fluctuations on the scattering of heavy-hole and light-hole excitons.     

Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/Al x Ga1−x As multiple quantum wells

Hot exciton relaxation is observed in GaAs/Al _x Ga_1–x As multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 Å, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons.     

Can we move photons?

The drag effects in the system of spatially separated electrons and excitons in an optical microcavity are predicted. It is shown that at low temperature an electron current induces the polariton flow, therefore, a transport of photons along the cavity. However, the superfluid polariton component does not contribute to the electron drag. We discuss possible experiments for the observation of electron-polariton drag effects.     

Bose-Einstein condensate of cavity exciton polaritons in a trap

The properties of traps for exciton polaritons in a semiconductor microcavity with an embedded quantum well have been considered. The behavior of the two-component Bose-Einstein condensate of photons and excitons described by the coupled system of Gross-Pitaevskii equations has been investigated. The analytical solutions for weak-confinement traps have been found in the Thomas-Fermi approximation. In the case of strong confinement, the behavior of the condensate has been investigated and constraints on the possible values of the chemical potential of the system have been obtained. The wavefunctions and generally different spatial profiles of the coupled photon and exciton condensates have been found.     

Optical nutation in the exciton range of spectrum

Optical nutation in the exciton range of spectrum is studied in the mean field approximation taking into account exciton-photon and elastic exciton-exciton interactions. It is shown that the features of nutation development are determined by the initial exciton and photon densities, the resonance detuning, the nonlinearity parameter, and the initial phase difference. For nonzero initial exciton and photon concentrations, three regimes of temporal evolution of excitons and photons exist: periodic conversion of excitons to photons and vice versa, aperiodic conversion of photons to excitons, and the rest regime. In the rest regime, the initial exciton and photon densities are nonzero and do not change with time. The oscillation amplitudes and periods of particle densities determined by the system parameters are found. The exciton self-trapping and photon trapping appearing in the system at threshold values of the nonlinearity parameter were predicted. As this parameter increases, the oscillation amplitudes of the exciton and photon densities sharply change at the critical value of the nonlinearity parameter. These two phenomena are shown to be caused by the elastic exciton-exciton interaction, resulting in the dynamic concentration shift of the exciton level.     

Temperature dependence of luminescence intensity under Bose condensation of interwell excitons

Photoluminescence of interwell excitons in GaAs/AlGaAs double quantum wells (n-i-n heterostructure) containing large-scale random potential fluctuations in the planes of heteroboundaries is studied. The properties of excitons, in which a photoexcited electron and a hole are spatially separated in neighboring quantum wells, were investigated upon variation of the power density of off-resonance laser excitation and temperature (1.5–4.2 K), both under lateral (in the heteroboundary plane) confinement of the excitation region to a few micrometers and without such a limitation (directly from the region of laser-induced photoexcitation focused to a spot not exceeding 30 μ. Under low pumping (with a power smaller than a microwatt), interwell excitons are strongly localized due to small-scale random potential fluctuations and the corresponding photoluminescence line is nonhomogeneously broadened to 2.5–3.0 meV. With increasing pumping power, the narrow line of delocalized excitons with a width of approximately 1 meV emerges in a threshold manner (the intensity of this line increases superlinearly near the threshold with increasing pumping). For a fixed pumping, the intensity of this line decreases linearly upon heating until it completely vanishes from the spectrum. The observed effect is attributed to Bose condensation in a quasi-two-dimensional system of interwell excitons. Within the proposed model, we show that the linear mode in the behavior of the luminescence intensity until its disappearance in the continuum of the photoluminescence spectrum upon a change in temperature is observed only for the condensed part of interwell excitons. At the same time, the luminescence of the above-the-condensate part of excitons is almost insensitive to temperature variations in the temperature range studied.     

Fermi edge polaritons in a microcavity containing a high density two-dimensional electron gas

Sharp, near band gap lines are observed in the reflection and photoluminescence spectra of GaAs/AlGaAs structures consisting of a modulation doped quantum well (MDQW) that contains a high density two-dimensional electron gas (2DEG) and is embedded in a microcavity (MC). The energy dependence of these lines on the MC-confined photon energy shows level anticrossings and Rabi splittings very similar to those observed in systems of undoped QW's embedded in a MC. The spectra are analyzed by calculating the optical susceptibility of the MDQW in the near band gap spectral range and using it within the transfer matrix method. The calculated reflection spectra indicate that the sharp spectral lines are due to k{ parallel}=0 cavity polaritons that are composed of e-h pair excitations just above the 2DEG Fermi edge and are strongly coupled to the MC-confined photons.