首页 | 本学科首页   官方微博 | 高级检索  
     检索      

矩形栅慢波系统的高频特性分析
引用本文:丁臻捷,刘国治,苏建仓,俞建国,丁永忠.矩形栅慢波系统的高频特性分析[J].强激光与粒子束,2005,17(8):0-1212.
作者姓名:丁臻捷  刘国治  苏建仓  俞建国  丁永忠
作者单位:1.电子科技大学 物理电子学院,四川 成都 61 0054
基金项目:国家863计划项目资助课题
摘    要:对于矩形栅这一经典的慢波结构,采用场匹配法来分析其慢波特性,进而得到其耦合阻抗。其中对槽区内的场处理,保留其高次项,表示为一无限本征驻波之和的形式。然后通过数值实例具体分析了矩形栅的两种典型结构:浅槽栅和深槽栅。当增大槽深后,色散增强,系统通带变窄,同时耦合阻抗有明显增大,工作点移向前向波区,适合用在放大器的慢波结构上。

关 键 词:矩形栅    色散关系    耦合阻抗    慢波系统
文章编号:1001-4322(2005)08-1210-03
收稿时间:2005-02-06
修稿时间:2005-06-20

Generation of intense annular electron beam generated by foilless diode in low guide magnetic field
DING Zhen-jie,LIU Guo-zhi,SU Jian-cang,YU Jian-guo,DING Yong-zhong.Generation of intense annular electron beam generated by foilless diode in low guide magnetic field[J].High Power Laser and Particle Beams,2005,17(8):0-1212.
Authors:DING Zhen-jie  LIU Guo-zhi  SU Jian-cang  YU Jian-guo  DING Yong-zhong
Institution:1.College of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China
Abstract:An experimental system of foilless diode operating in low guiding magnetic field was designed on the pulsed power generator S-5N. In the experiment, a trapezium-shape wavefrom was obtained with a rise time of about 9 ns and a flat top of about 26 ns when magnetic field strength was 0.5 T. The diode voltage was 420 kV and the current was 2.7 kA. The average radius of the beam spot was 16 mm. There was a good agreement between the design and experimental results. It was observed that the diode impedance increases following the guiding magnetic field until it reaches a turning point.
Keywords:Foilless diode  Annular electron beam  Low guiding magnetic field
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《强激光与粒子束》浏览原始摘要信息
点击此处可从《强激光与粒子束》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号