Band structure of superconducting photonic crystals

The band structure of a two-dimensional superconducting photonic crystal is investigated. This crystal is considered a periodic system of nonoverlapping cylinders that have a circular cross section and are infinite in length. The results are obtained using the method of plane wave expansion of eigenfunctions. The photonic band structure is analyzed for two temperatures, namely, in the vicinity of the superconducting transition point and far from it. The two-dimensional superconducting photonic crystal is found to have complete and incomplete band gaps at low temperatures. As the temperature increases, these band gaps shift toward the short-wavelength range.     

温度对超导光子晶体光子能带的影响

建立了二维超导光子晶体的物理模型,在超导二流体模型并考虑原子作非简谐振动情况下,用平面波展开法求出超导光子晶体的光子能带满足的方程.以YBaCuO超导光子晶体为例,探讨温度对它的光子能带结构的影响.结果表明：二维超导光子晶体在低温时具有较宽的禁带,且禁带宽度随温度的升高而变小.     

含特异材料一维超导光子晶体的带隙特性研究

利用传输矩阵法研究了含特异材料的一维超导光子晶体的带隙特性. 研究表明, 这类超导光子晶体同样具有由传统的电介质材料构成的超导光子晶体一样的低频带隙, 且在一定的参数下该低频带隙可以相当宽. 但在一定的结构参数下, 这类超导光子晶体同完全由传统的电介质构成的光子晶体一样不存在低频带隙. 还就超导光子晶体的偏振特性、光子晶体结构参数及环境温度的变化对光子带隙结构的影响进行了研究. 关键词： 超导光子晶体 传输矩阵法 特异材料 光子带隙     

基于自发辐射相干效应的可调光子带隙反射率的提高方法

光子带隙是指某一频率范围的波不能在周期变化的空间介质中传播,即这种结构本身存在“禁带”,并已成功地应用于滤波器、放大器和混频器等器件的设计中.此前,许多专家都致力于提高带隙的反射率,但其只能逐渐接近1.本文在囚禁于一维光晶格中的冷原子介质中实现两个可调光子带隙,并通过选择两基态为精细结构的三能级∧型原子系统,考虑自发辐射相干效应来探究这两个带隙的反射率.适当调节参数,探测场出现增益,从而获得较高反射率的带隙结构,甚至可以超过1.此外,两个带隙反射率还可以通过调节偶极矩之间的夹角以及非相干驱动场强度等参数来操控.     

一维Al/SrF2低温超导体-电介质光子晶体能带结构

基于二流体电子模型和平面波展开法,计算了一维Al/SrF2超导体-电介质光子晶体的能带结构.结果表明:随着超导层厚度的增加,第一光子带隙中心频率和截止频率均发生蓝移,且第一带隙宽度逐渐增加到一个峰值后又逐渐变窄.更重要的是,在低于临界温度的超低温环境中,温度的微小变化,对该类光子晶体的带隙宽度、中心频率以及截止频率均有...     

Polaritonic and photonic gap interactions in a two-dimensional photonic crystal

If an ionic material is used in a photonic crystal, the lattice resonance creates a polaritonic gap in the infrared range. The interaction between a polaritonic gap and the structure gap in a 2D square photonic crystal is studied by transfer matrix photonic band structure calculations. The polaritonic gap appears for a surprisingly low volume density of the ionic material. The TM gaps are larger than the TE gaps, as in the dielectric case. By varying the lattice constant, the structure gaps can be shifted across the polaritonic gap, and the effects of merging the two gaps can be studied.     

Fabrication of near infrared metallodielectric photonic crystal using metal-coated dielectric spheres

A metallodielectric photonic crystal with photonic band gaps in near infrared regime has been constructed using layer-by-layer stacking of two-dimensional micro-size metal-coated dielectric spheres array. In transmission spectra two photonic band gaps are observed at 1.38 μm and 2.46 μm, which are in agreement with theoretical calculations. Experimental results show that the photonic band gaps can be realized with about ten layers. The structure with metallic microspheres provides us a novel way for fabrication of near infrared metallic photonic crystals.     

Ta2O5/MgF2异质结构三维光子晶体的偏振性

为了在可见及近红外波段得到具有良好带隙结构的三维光子晶体,利用传输矩阵法分析了MgF₂、Ta₂O₅ 以及Ta₂O₅/MgF₂异质结构三维光子晶体的带隙性质.结果表明：Ta₂O₅/MgF₂异质结构三维光子晶体在820~1 020 nm的近红外波段TM模式下具有不受入射光方向影响的全方位光子带隙.该结构有望用于制作近红外光波段的偏振器件.     

类蜂窝状结构完全带隙二维光子晶体

通过在二维三角晶格中引入两个完全一样的介质圆柱构成了类蜂窝状结构光子晶体,并对其光子能带进行了频域计算。借助数值方法分析了介质柱位置改变对光子能带的影响,计算结果表明,这种类蜂窝状结构二维光子晶体可以产生很宽的带隙,而且在一定填充率下,可以通过调整介质柱的位置使完全光子带隙达到最大化。     

金属插层对C60/AlN一维光子晶体带隙的影响

利用传输矩阵方法,研究了金属Ag插层对C60/AlN一维光子晶体带隙宽度以及反射率的影响.结果表明：在C60与AlN之间插入Ag组成的［C60/Ag/AlN］n一维光子晶体,与未插入Ag层相比可使带隙增宽73.91%,最大反射率提高到91.01% .该结构可望用于制作紫外线波段的宽带反射镜.     

可见光波段SiO2/CdSe一维光子晶体及缺陷模的研究究

采用SiO2/CdSe构建了可见光波段一维光子晶体结构,并在其中引入LiTaO3缺陷层。利用传输矩阵法,分析了电磁波在无缺陷与含LiTaO3缺陷层两种光子晶体中的带隙结构,系统地研究了缺陷层参数对光子晶体可见光波段带隙结构的影响规律。计算结果表明：LiTaO3的引入,有利于带隙宽度的增加,调整缺陷层结构参数,缺陷模的位置可在不同颜色区域出现,如红光、黄光等缺陷模。该结构有望用于制作可见光波段的滤波器。     

准分形光子晶体多频带隙的特性及其应用

用时域有限差分方法计算了多种准分形结构光子晶体的能带. 数值计算结果表明, 这些结构的光子晶体存在多频带隙的特点, 且带隙的宽度及中心频率以及带隙中导带的中心频率均随准分形光子晶体单胞内结构单元几何形状的改变而改变.     

Obtaining the band structure of a complicated photonic crystal by linear operations

Absolute band gaps can be created by lifting the degeneracy in the bands of a photonic crystal.To calculate the band structure of a complicated photoinc crystal generated by e.g.symmetry breaking ,general forms of all possible linear operations are presented in terms of matrices and procedure to combine these operations in given.Other forms of linear operations (Such as the addition,subtraction,and translation transforms)are also presented to obtain an explicit expression for the Fourier coefficient of the dielectric function in the plane-wave expansion method.With the present method,band structures for various complicated photoinc crystals(related through these linear operations)can be obtained easily and quickly.As a numerical example,a large absolute and gap for a complicated photonic crystal structure of GaAs is found in the high reglon of normalized frequency.     

电磁波在周期介质中的传播及二维光子晶体的光子带结构

光子晶体是光学与凝聚态物理交叉的新领域,也是近年来应用物理学的一个重要研究领域,它是一种由介电常数高的(低的)介质在另一种介电常数低的(高的)背景介质中周期排列所组成的人造多维周期结构材料,能够产生光子带隙。频率落在带隙内的光在晶体里沿任何方向都不能传播,因而具有能够抑制原子、分子的自发辐射等诱人的光电子学特性,在基础研究和实际应用上都有着巨大的潜力。本文在这一领域里进行了富有成效的研究,获得了很好的结果。主要有:(1)利用平面波展开方法来计算二维光子晶体的带隙结构。首先,我们设计正方晶胞的二维光子晶体模型。设x₃方向为介质柱的轴方向,二维周期结构在x₁-x₂平面上。晶胞的晶格常数为a,半径为r,介质柱和空气柱的介电常数分别为ε_a=17和ε_b=1,a>2r。设计的核心思想是通过降低光子晶体结构的对称性,消除光子能带在晶体的布里渊区高对称点上的本征简并。(2)对于二维光子晶体的电磁波理论及周期介质中的Bloch波解做了详细的推导,给出了光子晶体中禁带存在的理论依据。同时以正方格子晶格的二维光子晶体为例,验证了电介质在空气圆孔中的排列存在E偏振和H偏振的光子带隙重叠区,称为绝对光子带隙。对于二维的光子晶体,两种本征偏振模式的光子能带结构可以独立地调节,以实现两者的光子带隙的最优重叠, 从而大大提高了二维光子晶体的完全带隙宽度。     

基于像素法用模拟退火-遗传算法搜索一维宽带隙光子晶体

将一维光子晶体用像素填充法进行二进制编码,把模拟退火、遗传算法、模拟退火-遗传混合算法与传输矩阵法结合,搜索、计算了一维光子晶体结构和能带,找到了全方位相对禁带宽度高达43.53%的四层结构和43.76%的两层结构,并给出了一维四层结构光子晶体的能带图及其4个原胞的反射率和透射率的频谱图;发现一维两层结构光子晶体的全方位禁带宽度对每层厚度的变化不敏感,但随着两种介质折射率差的增加而增大.     

Optical properties of one-dimensional photonic crystals obtained by micromatchining silicon (a review)

The theoretical and experimental investigations of photonic band gaps in one-dimensional photonic crystals created by micromatchining silicon, which have been performed by the author as part of his doctoral dissertation, are presented. The most important result of the work is the development of a method of modeling photonic crystals based on photonic band gap maps plotted in structure–property coordinates, which can be used with any optical materials and in any region of electromagnetic radiation, and also for nonperiodic structures. This method made it possible to realize the targeted control of the optical contrast of photonic crystals and to predict the optical properties of optical heterostructures and three-component and composite photonic crystals. The theoretical findings were experimentally implemented using methods of micromatchining silicon, which can be incorporated into modern technological lines for the production of microchips. In the IR spectra of a designed and a fabricated optical heterostructure (a composite photonic crystal), extended bands with high reflectivities were obtained. In a Si-based three-component photonic crystal, broad transmission bands and photonic band gaps in the middle IR region have been predicted and experimentally demonstrated for the first time. Si–liquid crystal periodic structures with electric-field tunable photonic band-gap edges have been investigated. The one-dimensional photonic crystals developed based on micromatchining silicon can serve as a basis for creating components of optical processors, as well as highly sensitive chemical and biological sensors in a wide region of the IR spectrum (from 1 to 20 μm) for lab-on-a-chip applications.     

二维函数光子晶体

光子晶体是由两种或两种以上不同介电常数材料所构成的周期性光学纳米结构.光子晶体结构可分为一维、二维和三维,其中二维光子晶体已成为研究的热点.可调带隙的二维光子晶体可以设计出新型的光学器件,因此,对它的研究具有重要的理论意义和应用价值.本文提出的二维新型函数光子晶体可以实现光子晶体带隙的可调性.所谓二维函数光子晶体,即组成它的介质柱的介电常数是空间坐标的函数,它不同于介电常数为常数的二维常规光子晶体.二维函数光子晶体是通过光折变非线性光学效应或电光效应使介质柱的介电常数成为空间坐标的函数.运用平面波展开法给出了TE和TM波的本征方程,由傅里叶变换得到二维函数光子晶体介电常数ε(r)的傅里叶变换ε(G),其傅里叶变换比常规二维光子晶体的复杂.计算发现当介质柱介电常数为常数时,其傅里叶变换与常规二维光子晶体的相同,因此二维常规光子晶体是二维函数光子晶体的特例.在此基础上具体研究了二维函数光子晶体TE波和TM波的带隙结构,其介质柱介电常数函数形式取为ε(r)=k·r+b,其中k,b为可调的参数.并与二维常规光子晶体TE波和TM波的带隙结构进行了比较,发现二维函数光子晶体与二维常规光子晶体TE波和TM波的带隙结构有明显的区别,二维函数光子晶体的带隙数目、位置以及宽度随参数k的变化而发生改变.从而实现了二维函数光子晶体带隙结构的可调性,为基于二维光子晶体的光学器件的设计提供了新的设计方法和重要的理论依据.     

THz波段光子晶体带隙影响因素研究

应用平面波展开法和时域有限差分法分析计算了二维方形光子晶体在太赫兹波段的带隙特征,并着重研究了影响太赫兹波段二维方形光子晶体带隙的因素。通过改变光子晶体的介电常数和截面半径得出了光子晶体带隙随这两种因素的变化规律,进而研究了太赫兹波段损耗较小的塑料和高阻硅两种材料构成的光子晶体带隙及光子晶体波导的传输特性。     

Synthesis and photonic band gap characterization of high quality photonic crystal heterostructures

High quality photonic crystal heterostructures with a thin titania planar defect layer between its two constitutional photonic crystals were fabricated and their structural and optical properties were analyzed. The results suggest that the thin planar defect layer is beneficial to separate the two constitutional photonic crystals from each other and to reduce the roughness of the interface. The quality of the resulting photonic crystal heterostructures is improved largely and the main features of the photonic band gaps of the two constitutional photonic crystals are inherited. The predominant optical quality of these heterostructures (e.g. deep double photonic band gaps and steep photonic band edges) may afford new flexibility and functionality for engineered photonic behavior in practical devices such as late-model light-operated switches.     

一种类分形结构光子晶体的能带

用时域有限差分方法计算了一种类分形结构光子晶体的能带.数值计算结果表明,这种结构的光子晶体在介质柱、空气背景的情况下具有不完全带隙.而且,其能带结构随着级数的增大在整体地趋向于低频的同时,能带结构也趋于稳定.