Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

Shear band formation in IF steel during cold rolling at medium reduction levels

The mechanisms of shear band formation in IF steel after cold rolling to ～50% reductions have been investigated using transmission electron microscopy. The observations revealed that shear bands were always parallel to a second set of microbands, where these exist, and contained within individual crystals, indicating that shear banding is controlled by orientation. Crystallographic analysis revealed that shear banding involves two mechanisms, dislocation glide and rigid-body rotation. In the first step, dislocation glide causes a rotation about the 〈211〉 axis to produce the so called ‘S’ band, which gives the shear band its crystallographic character. In the second step, when the most heavily stressed slip plane parallel to the shear band is of the form {110}〈111〉, rigid-body rotation continues about the 〈211〉 axis in the sheared zone and, then, a rotation about the transverse direction (TD) is promoted by the geometry of the sample. Using rigid-body matrix theory, the calculated orientations of shear bands are shown to be in agreement with experimental observations. The process outlined is capable of explaining how slip processes in grains that contain microbands, using either {110} or {112} slip planes, can produce crystallographic shear bands.     

Slip on the surface of silicon wafers under laser irradiation:Scale effect

The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.     

Formation of microcracks in an indented Ti<Subscript>3</Subscript>Al intermetallic compound

Microcracks in the Ti₃Al alloy indented at room temperature have been analyzed by electron microscopy. Analysis of the microstructure has revealed that microcracks propagate in the {0\(\overline 1 \)11} pyramidal planes and in the slip bands of the 2c + a superdislocations in the {20\(\overline 2 \)1} and {11\(\overline 2 \)1} pyramidal planes. It is found that the formation of a slip band in the basal plane at the microcrack tip leads to a change in the character of microcrack propagation from straight-line to steplike.     

Structure of boron carbide after applying shear deformations under a pressure to 55 GPa

Transmission electron microscopy has been used to study the structural features of boron carbide treated in a high-pressure shear chamber with diamond anvils in the pressure range 25–55 GPa. Such a treatment has been shown to lead to the predominant crack formation along planes {10 11 } and {10 12} and also the formation of polytypes in the {10 11} planes and strain bands in the {10 12} planes.     

Etch pits in AgCl crystals

Single crystal sheets have been prepared by the capillarity method. The dislocations can be revealed with a sodium thiosulphate solution at surface orientations from two regions in the basic triangle. These are: region A around 001 pole up to ≈25°, and region B around 111 pole up to ≈pa 10°. In the remaining region C of the basic triangle the dislocations do not etch. In region A the etch pits have the shape of pyramids. In region B they are triangular pyramidal in shape. Evidence is given that the edge and screw components of annealed and fresh dislocations are revealed by etching. At surface orientations near either the {00l} or {111} planes the slip can be activated in such zones 〈110〉 that are nearly parallel to the surface of the sheets. The slip bands are then straight and predominantly of the edge type.     

钼单晶体的范性形变

在本文中,用金相和X射线方法,研究了24个取向不同的钼单晶体在-80℃(-50℃)、27℃、1000℃和～2000℃拉伸后的情况。分析研究的结果,认为观察到的{112}、{123}、{145}等滑移痕迹,是由于在两组不平行的{110}面上,沿着同一个<111>方向组合滑移后构成的外观面貌,而滑移面是密排的{110}面。外观滑移面(从滑移痕迹测定出的)会随样品取向不同而发生变化。当变形温度改变时,同一个样品的外观滑移面可能改变,也可能不改变,这要由样品的取向来决定。 关键词：     

Two modes of slip systems in iron silicon crystals

Single crystals of iron 11·6 wt.% silicon were deformed in compression and slip bands were observed by optical microscope in specimens of different orientations. The deformation took place mostly by crystallographic slip along {110} planes, however, non-crystallographic slip in specimens of particular orientations was observed, too. On the basis of the present and previous results a simple qualitative model is proposed which explains which slip planes should be observed in crystals of iron with different silicon content deformed under various conditions. The main idea of the model is the eixstence of two different modes of slip systems in these crystals. The model predicts the conditions at which one slip mode prevails.The author would like to thank Dr. F. Kroupa, Dr. A. Gemperle, Dr. B. esták and Dr. J. Blahovec for useful discussions.     

集中力作用下硅中位错结构

本文用化学侵蚀法研究了硅单晶样品在800—1000℃印压得到的位错“花结”。实验结果说明:印压产生的位错分布在{111}滑移面上;位错线的取向大部分是<110>或<112>方向。分析并观察到在压印下有两种位错环,一种是柏格斯矢量沿<110>方向并平行于(111)印压面;一种是柏格斯矢量沿<110>方向并与印压面相交。对位错环的结构进行了分析。     

Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.     

Hardness and slip systems of orthorhombic hen egg-white lysozyme crystals

Hardness and slip systems by an indentation method were investigated on different habit planes of orthorhombic hen egg-white lysozyme (O-HEWL) crystals containing water. A dependence of the hardness on the water-evaporation time exhibits three stages as incubation, transition and saturated ones, as tetragonal (T)-HEWL crystals reported previously. The hardness values of (1 1 0), (0 1 0) and (0 1 1) habit planes of O-HEWL in the incubation stage or wet condition exhibits 6, 8 and 10 MPa, respectively. The hardness depends on indented planes but it is independent of the air-humidity and crystal volumes. These values correspond to the intrinsic hardness for O-HEWL crystals containing water. In the incubation stage, the slip traces are clearly observed around the indentation mark and the corresponding six kinds of slip systems are identified to be {0 1 1}<1 0 0>, {1 1 0}<1 1 0>, {0 1 1}<0 1 1>, {1 1 0}<0 0 1>, {1 0 0}<0 0 1> and {0 1 0}<0 0 1>.     

Sectional area-dependent plasmonic shifting in the truncated process of silver nanoparticles: from cube to octahedron

A silver nanocube with sub-40 nm edge length was truncated by {111} planes and transformed into octahedron gradually. The extinction cross-section spectra corresponding to this process were studied by using the discrete dipole approximation (DDA) method. Non-monotonous shifting (blue shifts first and then red shifts) of the surface plasmon resonance (SPR) bands was observed. It was found that the sectional area of {111} facets could be a new and better factor to characterize the shape-dependent non-monotonous shifting of the SPR. The area of {111} facet increases while the SPR peak red shifts, whereas decreases while the SPR peak blue shifts. Similar results were also observed while an octahedron has been truncated into a smaller cube. The physical mechanism was illuminated by analyzing the local field distribution of the nanoparticles with different truncated ratios. The distance of the charge center was one of the most important reasons to affect the shift of SPR as the sectional area of {111} facet is changed. We believe the sectional area factor could be widely used to investigate the SPR shifting in other kinds of truncated process.     

Extended defects in hydrogen-implanted (111) silicon wafer treated by high temperature annealing process

Hydrogen impurity has been an active topic of research in material science and en-gineering[1—3]. Many studies indicated that chemically active hydrogen can affect theproperties of the materials including silicon. For example, hydrogen may lead to theembrittlement of silicon crystals[4] and the passivation of the deep-level impurities[5].More interestingly, high dose of hydrogen in silicon by ion implantation can evidentlychange the material structure. {111} and {100} platelet defects were ob…     

Thermal faceting of the rutile TiO2(001) surface

Temperature dependent faceting of rutile TiO₂ surfaces cut to the (001) plane has been reported [Tait and Kasowski, Phys. Rev. B20 (1979) 5178]. By comparing LEED data to beam positions calculated for various sets of facet planes, the facet planes have been identified. The first ordered structure observed on annealing ion bombarded surfaces is composed of {011} facets with the facet planes in a (2 × 1) reconstruction. The high temperature structure produced on annealing above 1300K is best described as {114} facets; however, there are deviations of the observed LEED pattern from that calculated for {114} facets, possibly because of the presence of related planes. LEED data have now been obtained on the behavior of (110), (100), (011), (114), and (001) surfaces in UHV. The observed stability of TiO₂ surfaces can be related to the Ti ion coordination numbers in the surface plane as derived from stoichiometric terminations of the rutile lattice.     

The austenite microstructure evolution in a duplex stainless steel subjected to hot deformation

Abstract

The austenite microstructure evolution and softening processes have been studied in a 23Cr–6Ni–3Mo duplex stainless steel, comprising equal fractions of austenite and ferrite, deformed in uniaxial compression at 1000 °C using strain rates of 0.1 and 10 s^?1. The texture and microstructure evolution within austenite was similar in character for both the strain rate used. The observed large-scale subdivision of austenite grains/islands into complex-shaped deformation bands, typically separated by relatively wide transition regions, has been attributed to the complex strain fields within this phase. Organised, self-screening microband arrays were locally present within austenite and displayed a crystallographic character for a wide range of austenite orientations. The microband boundaries were aligned with the traces of {1?1?1} slip planes containing slip systems having high, although not necessarily the highest possible, Schmid factors. The slightly lower mean intercept length and higher mean misorientation obtained for the sub-boundaries at the higher strain rate can be ascribed to the expected more restricted dynamic recovery processes compared to the low strain rate case. Dynamic recrystallisation within austenite was extremely limited and mainly occurred via the strain-induced migration of the distorted original twin boundaries, followed by the formation of multiple twinning chains.     

Effect of cyclic stresses on the microstructures of hexagonal close packed metals

Slip band extrusions are formed in cadmium, magnesium and titanium, but not in zinc. The extrusions form preferentially in untwinned crystals. Filamentary growths occur at {10¯12} and {11¯21} twin interfaces during cyclic twinning.Possible dislocation interactions at these twin interfaces are described. The dislocation debris produced during cyclic strain in the slip bands and by cyclic twinning is shown to be similar and composed of a high density of dipole loops. It is therefore concluded that the occurrence and distribution of slip band extrusions in metals and the formation of twin boundary filamentary growths can be accounted for by a model based upon the glide of interstitial type dipole loops. Vacancy type loops will then cause crack nucleation in slip bands and deformation twin boundary regions.Twin boundary debris can also cause the observed fragmentation of twins by acting as a barrier to twin boundary movement.The author is grateful to Dr. A. G. Crocker, University of Surrey, for many discussions on the twinning mode in h.c.p. metals and to P. J. E. Forsyth for his interest and encouragement. The paper is published by permission of the Controller, H. M. Stationery Office. Crown copyright is reserved.     

铁的冲击相变机制的分子动力学研究

 用分子动力学方法模拟计算了在冲击波加载条件下，单晶铁中的结构相变（由体心立方结构α相到六角密排结构ε相），相互作用势采用铁的嵌入式原子势（EAM），单晶铁样品的尺寸为28.7 nm×22.9 nm×22.9 nm，总原子数为1.28×10⁶个。通过推动一个运动活塞对静止靶的作用来产生冲击压缩，加载方向沿单晶铁的[100]晶向。通过对原子位置的追踪，揭示了铁的冲击相变机制，计算结果表明相变机制包括两步：首先是在{011}面上的原子受到沿〈100〉晶向的压缩，使{011}面转化成正六角形密排面；然后是在{011}面上原子沿〈0-11〉晶向的滑移，完成由bcc结构到hcp结构的相变。同时发现滑移面只出现在与冲击波加载方向平行的(011)和(0-11)面上。     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.     

The distribution of dislocations in slip bands of Fe-3% Si alloy single crystals deformed by bending

The distribution of dislocations at the ends of slip bands was studied by etching on surfaces parallel to the slip plane. In these places the slip band is formed by groups of asymmetric dislocation loops several hundred microns wide. The long mixed-type parts of these loops running nearly equidistantly and lying in near planes, are the equilibrium arrangement of dislocations of the same sign in the shear stress gradient. From the results we can judge that the dislocation sources are at larger distances from the ends of the slip bands and that the dislocation groups at the ends of the slip bands are sources of large stress fields.     

Segregations at antiphase boundaries in hexagonal close-packed superstructures. II

As was shown in the first part of this study [1], slip occurs in polycrystalline ordered Mg₃Cd, which has a DO₁₉ superstructure, along the {0001} basis planes, {1010} prismatic planes, and {1011} and {1012} pyramidal planes [2,3]. The formation of segregations at antiphase boundaries (APB's) in the {0001} basis and {1011} pyramidal planes was also examined there [1]. Segregations at APB's in planes are treated in this second part of the study. A zero-energy APB may form in the prismatic plane [4]. Segregation of atoms, on the other hand, is not allowed at such an APB according to the Gorskii-Bragg-Williams theory if correlation and interaction in the second and higher coordination spheres are not taken into account.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 62–70, May, 1969.The authors thank N. S. Golosov and N. V. Kozhemyakin for discussion of this study and valuable advice.