基于量子尺寸效应的InP纳米内包层光纤研制及放大性

利用改进的化学气相沉积法制作出纳米级InP薄膜内包层光纤;根据氢原子本征能量模型计算了InP微粒产生量子尺寸效应的相对粒径a_B=8313 nm,且由量子尺寸效应计算了不同尺寸粒子的带隙能量以及相对应的光吸收波长;由测试工作系统测试,在906—1044 nm,1080—1491 nm,1524—1596 nm 波段上均有增益;结果表明：当内包层薄膜材料厚度达5—50nm量级时,其能级将发生红移,产生放大性能. 关键词： 纳米包层光纤 量子尺寸效应 光放大     

磷化铟纳米晶的制备及光学性质研究

阐述了目前国内外的磷化铟纳米晶研究状况。用有机溶剂回流退火法制备出了磷化铟纳米晶，并通过XRD谱计算出平均粒径为55nm。喇曼光谱表明：由于纳米颗粒的量子尺寸效应, 2个散射峰都向低能量方向发生了较大的移动。UV VIS表明样品的吸收边相对于体块InP（970nm）发生了显著的蓝移，说明带隙变宽，表现出明显的量子尺寸效应。PLE谱在380nm时，PL谱峰在573nm时,相对于体块InP的红外区的荧光光谱发光峰发生了显著的蓝移，说明磷化铟纳米晶在光电子器件领域和非线性光学领域有非常好的应用前景。     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/Si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响。扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面上的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象。通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了量子尺寸效应对表面反应活性的调控作用。     

InP掺杂超晶格的MOCVD生长与表征

用常压MOCVD技术生长了InP掺杂超晶格,所用源材料为TMIn和PH3.InP的载流子浓度低为8×1013cm-3,300K迁移率高达5744cm2/V·s.n型掺杂剂是DETe,p型为DMZn,两者在InP中的掺杂浓度均可达~1019cm-3.用不同激发强度下的低温PL谱,时间衰减,时间分辨PL谱和光反射(PR)谱技术表征了InP掺杂超晶格.文中给出了在不同激发强度下InP掺杂超晶格的4KPL谱,该样品由六层(n·p)组成,每层厚度200Å,掺杂浓度分别是1×1018cm-3和2×1018cm-3.发光峰值能量明显低于InP的禁带宽度,当激发强度增加时峰值能量移向高能边,这是真实空间中的间接跃迁特征.总PL信号衰减分成几步,每步都按指数规律,在4K情况下,衰减常数从6×10-8秒到7×10-4秒,具有明显间接带隙材料特征.InP掺杂超晶格中的量子尺寸效应用PR谱技术进行了研究.为描述InPnipi结构中的量子尺寸效应,引进了抛物型势阱模型,实验结果与根据引进模型所进行的计算相符.     

利用B-splines特性计算PbS量子点中的激子基态能量的量子尺寸效应

利用B-splines特性构建量子点中激子的波函数,计算PbS量子点中激子的基态能量E_g的量子尺寸效应,并将计算结果与实验结果及其他理论计算结果进行比较;利用B-splines技术计算的激子的基态能量在整个区域与实验完全符合,同时计算了有效质量和势垒高度对基态能量E_g的量子尺寸效应的影响.     

金属薄膜表面化学反应活性中的量子尺寸效应

本文首先简要介绍了金属薄膜的量子尺寸效应及其对表面化学性质的影响,然后对Pb/si体系量子尺寸效应的近期研究进行了综述,最后详细介绍了量子效应对表面化学反应活性的影响.扫描隧道显微镜观察表明:在Pb(111)单晶薄膜表面卜的分子吸附和氧化反应随着薄膜厚度一个原子层一个原子层变化时会出现振荡现象.通过研究薄膜中量子阱态的形成、费米能级处电子态密度的变化与薄膜的表面反应活性之间的关系,我们从实验上直接定量地证明了最子尺寸效应对表面反应活性的调控作用.     

硅BC8量子点太阳能电池中的多重激子效应

多重激子效应是指在纳米半导体晶体中,量子点吸收一个高能光子而产生多个电子-空穴对的过程,该效应可以提高单结太阳电池能量转换效率。利用碰撞电离机制和费米统计模型计算了工作温度300 K的单结硅BC8量子点太阳能电池在AM1.5G太阳光谱下的能量转换效率。对于波长在280~580 nm的入射光,多重激子效应可以大幅增强硅BC8量子点直径d>5.0 nm的量子点太阳电池的能量转换效率。硅纳米量子点的直径d=6.3~6.4 nm时,最大能量转换效率为51.6%。     

硒化铅量子点聚乙烯醇薄膜的三阶非线性光学特性

通过湿化学方法制备了具有三阶非线性光学性质的硒化铅/聚乙烯醇复合物薄膜.采用透射电镜和扫描电镜对硒化铅量子点的尺寸和薄膜的形貌进行表征.运用Z扫描方法,研究了薄膜在波长为532nm,脉冲宽度为38ps条件下的三阶非线性光学性质.实验结果表明:合成的硒化铅量子点尺寸在10nm左右,属于强量子受限,制备的薄膜表面粗糙度比较好;薄膜在皮秒脉冲激光作用下呈现负的非线性折射效应和反饱和吸收性质,其三阶非线性极化率χ(3)为3.6×10-11 esu.     

基于InP/ZnS核壳结构量子点的色转换层设计及制作

提出了采用环境友好型InP/ZnS核壳结构量子点材料制备匹配蓝光Micro-LED阵列的量子点色转换层以实现Micro-LED阵列器件全彩化的技术方案。通过采用倒置式量子点色转换层方案,实现了InP/ZnS量子点材料和Micro-LED阵列的非直接接触,从而可以缓解LED中热量聚集导致的量子点材料发光主波长偏移、半峰宽展宽以及发光效率衰减等问题。量子点色转换层中内嵌PDMS聚合物柔性膜层,可以消除咖啡环效应,同时,色转换层中内嵌飞秒激光图案化处理的500 nm长波通滤光膜层,可以抑制蓝光从非蓝色像素单元出射。最后,实验制备了像素单元中心间距90μm的16×16 InP/ZnS量子点色转换层。该设计可以实现基于蓝光Micro-LED阵列的全彩色Micro-LED显示器件的制备,并且该制备方法可以降低全彩色Micro-LED阵列显示器件的制备成本。     

ZnCuInS/ZnS量子点与Poly-TPD补偿发光光谱的研究

ZnCuInS/ZnS量子点是一种无重金属、“绿色”半导体纳米材料。在研究中,制备出尺寸为3.2 nm的ZnCuInS/ZnS核壳量子点,并说明它是施主-受主对复合发光。通过测量ZnCuInS/ZnS量子点的光致发光光谱,其发射峰值波长为620 nm、半宽度是95 nm的红光。同时,还制备出Poly-TPD有机薄膜,其发光光谱是峰值波长为480 nm的蓝光。所以,ZnCuInS/ZnS量子点和Poly-TPD发光颜色具有互补性。在ZnCuInS/ZnS量子点薄膜层上包覆一层poly-TPD薄膜后,二者发光颜色互补。在恰当的偏置电压下,可以得到较好的白光光谱。计算表明,其色坐标是(0.336,0.339),颜色指数是92。     

Quantum Size Effect of Inner Cladding Fibres with InP Nano Thin Films

Optical amplified characteristics of inner cladding fibres with InP thin films are tested. The results indicate that this kind of fibres exhibit better optical amplification, which is advantageous for short lengths of fibres. The amplification coefficients of per unit length are 1.40-5.12 dB/m at the wave band from 906 to 1044 nm, 1.40- 15.35dB/m from 1080 to 1491nm, and 1.86-7.44dB/m from 1524 to 1596nm. Based on the hydrogen atomic model, we calculate the comparative size of the InP particle aB = 8.313 nm. The result displays the quantum size effect. By calculating the change of the energy band of particles with different sizes, the experimental data are explained by quantum size effect.     

The structure transition from vertical alignment to anti-alignment of InAs/InP quantum dot multilayers

We calculate the minimum Gibbs free energy of the InAs/InP quantum dot multilayer by combining the method of moving asymptotes and the finite element method. Based on the principle of the least energy, the transition between vertically aligned and anti-aligned quantum dot multilayers is studied. We investigate the influence of quantum dot base size and density on critical spacer thickness for the transition. The study results indicate that the critical thickness increases with the decrease in the density of quantum dots, while the base size of the quantum dot is linear to the critical thickness when the density is given.     

InP纳米颗粒的超快动力学和光学非线性

通过飞秒泵浦-探测方法测量了波长为800 nm时InP半导体纳米颗粒激发态的瞬态动力学过程。观察到一个快速的光致漂白建立和一个漂白的恢复过程,分析饱和吸收的来源可能是带填充效应引起跃迁的饱和吸收。对于漂白恢复中的快过程是由于自由载流子的弛豫,而慢成分是由于光激发载流子在很短的时间内受陷于表面态形成的限域载流子的弛豫。通过飞秒光克尔效应(OKE)方法测量材料的超快非线性响应曲线,计算了材料的光学三阶非线性极化率,分析了非线性的来源。     

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar ion sputtering

The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar⁺ ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar⁺ ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In_4d and P_2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.     

有机铬富勒烯衍生物的激发态与光限幅特性

应用倍频ｎｓ／ｐｓＮｄ：ＹＡＧ脉冲激光系统,在波长为５３２ｎｍ,脉冲宽度为２１ｐｓ的条件下,研究了新型有机铬富勒烯衍生物的激发态吸收与光限幅特性,其光限幅特性优于富勒烯甲苯溶液;并应用单重态激发态吸收理论对实验结果进行了分析,实验结果与理论结果基本一致。     

Pressure effect on structural,electronic optical and thermodynamic properties of cubic AlxIn1-xP: a first-principles study

ABSTRACT

First-principles total energy calculations have been performed using the full potential linearised augmented plane wave (FP-LAPW) method as implemented in the WIEN2k code based on the density functional theory (DFT) to investigate the Al-doping effects on the structural, electronic and optical properties of Al_xIn_1-xP ternary alloys in the zinc-blende (ZB) phase. Different approximations of exchange-correlations energy were used such as the local density approximation (LDA), the generalised gradient approximation within parameterisation of Perdew–Burke–Ernzerhof (PBE-GGA), and the Wu-Cohen (WC-GGA). In addition, we have calculated the band structures with high accuracy using the Tran-Blaha modified Becke–Johnson (TB-mBJ) approach. The pressure dependence of the electronic and optical properties of binary AlP, InP compounds and their related ternary alloys Al_xIn_1-xP were also investigated under hydrostatic pressure for (P?=?0.0, 5.0,10.0, 15.0, 20.0, 25.0?GPa), where it is found that InP compound change from direct to indirect band gap for P?≥?9.16?GPa. Furthermore, we have calculated the thermodynamic properties of InP and AlP binary compounds as well as the Al_xIn_1-xP solid solutions, where the quasi-harmonic Debye model has been employed to predict the pressure and temperature dependent Gibbs free energy, heat capacity, Debye temperature and entropy.     

Formation of InP nanoparticles by laser ablation in an aqueous environment

Indium phosphide (InP) semiconductor nanoparticles were obtained by laser ablation of a crystalline wafer in water. The transmission electron microscopy micrographs of the nanoparticles show that their size is in the range of 100 nm. In the Raman spectrum of the nanoparticles, the characteristic peaks of InP have been observed in the vicinity of 300 and 340 cm⁻¹. The binding energies as measured from the X-ray photoemission spectra are consistent with values for InP crystal as well as indium oxides.     

Exploiting the difference in lattice structures for formation of self-assembled PbS dots on InP(110)

Via the example of PbS self-assembled nanodots on InP(110) we show that spontaneous self-organization at semiconductor interfaces can be achieved due to different lattice structure of the constituents with close lattice constants. Regularly shaped triangular pyramidal PbS dots almost perfectly oriented on the substrate and distributed reasonably uniform in size can be grown in this way by molecular beam epitaxy. The average lateral dot size can be varied between 15 and 35 nm by appropriate choice of growth temperature and total PbS coverage.