氧化石墨烯褶皱行为与结构的分子模拟研究

应用反应力场分子动力学方法,模拟了单层氧化石墨烯在径向压缩作用下的褶皱过程,研究了含氧基团(羟基、环氧基)对氧化石墨烯褶皱行为以及褶皱球结构稳定性的影响.当石墨烯仅含羟基时,该类氧化石墨烯呈现出"推进式"的褶皱行为,而当石墨烯仅含环氧基时,该类氧化石墨烯则呈现出片层与片层"贴合式"的褶皱行为.褶皱行为的不同决定了氧化石墨烯最终褶皱球结构的差异.通过分析原子级势能增量分布与C—C成、断键位置之间的关系,发现氧化石墨烯上C—C成、断键主要发生在变形较为严重的区域,且相较于羟基,环氧基对与其连接的C—C键具有更强的削弱作用.为了研究氧化石墨烯褶皱球的结构稳定性,模拟了其在无约束条件下的释放过程.发现氧化石墨烯褶皱球的结构稳定性取决于其中C—C成、断键数量,即C—C成、断键的数量越多,结构越稳定,且在同一氧化率下,褶皱球的结构稳定性随环氧基比例的增大而提高.本研究表明,通过改变氧化石墨烯片层上含氧基团的相对比例,可实现对其褶皱球稳定性的控制.     

红外光谱法氧化石墨烯表面氧化度的测定

氧化石墨烯是由sp~2和sp~3两种杂化碳原子构成的单原子层二维网络结构,富含羟基、环氧基和羧基多种含氧基团,是众多功能化石墨衍生物的前驱体;其中,羟基和环氧基主要分布在氧化石墨烯片层表面,羧基主要位于片层结构的边缘,利用氧化石墨烯表面的羟基或环氧基可以得到垂直于表面的有序结构材料,利用边缘的羧基可得到多种悬垂结构的功能复合材料。利用不同氧化方法和同种氧化剂不同用量进行氧化得到石墨烯的氧化度不同,从而功能化后的石墨烯性能有很大差异。氧化石墨烯的氧化度测定是对其进行改性的基础。科学家们通过XRD, XPS, FTIR, Zeta,拉曼光谱法等研究石墨烯中不同杂化的碳原子和氧原子比例,但是几乎没有报道可以直接测量氧化石墨烯上含氧官能团的量。主要通过苯酚作为标准利用傅里叶变换红外光谱建立一种氧化石墨烯片层间羟基含量的测定方法。采用化学氧化-还原法制备薄层氧化石墨烯(GO),由于苯酚和GO具有相似骨架结构,以苯酚的红外光谱谱图可以作为标准图谱,苯酚红外光谱在1 597, 1 500和1 474 cm~(-1)为其苯环结构的伸缩振动吸收峰;在1 374 cm~(-1)处为苯环C—H面内弯曲振动吸收峰;而在1 234 cm~(-1)处为酚类C—OH伸缩振动吸收峰。氧化石墨烯的红外谱图中1 630 cm~(-1)出现类苯环骨架CC的伸缩振动吸收峰,在1 400 cm~(-1)出现氧化石墨烯片层上C—O(H)的伸缩振动吸收峰。利用测试苯酚中苯环和羟基C—OH吸收峰面积的比值,与氧化石墨烯上类苯环结构CC和片层上羟基C—O(H)吸收峰面积的比值,可以得到片层上羟基含量的值。同时利用场发射扫描电镜,透射电镜,原子力显微镜,紫外可见分光光度计和激光拉曼光谱仪对计算结果进行验证,结果表明类比红外光谱法,可以作为测定氧化石墨烯片层上羟基含量的一种有效方法。     

基于变压红外光谱研究离子液体[MPIM][I]与石墨烯氧化物之间的相互作用

本研究利用红外光谱研究不同压力下离子液体1-Methy1-3-propylimidazolium iodide([MPIM][I])与石墨烯及其氧化物的相互作用.结果表明,[MPIM][I]对压力的变化具有高敏感度,咪唑环与烷基链在0.4 GPa时产生相变化,可明显观察到吸收峰的裂解,且连续加压会导致咪唑环与烷基链的振动频率蓝移.[MPIM][I]与石墨烯作用时加压至2.5 GPa也未观测到相变化的产生,且咪唑环与烷基链的振动频率蓝移趋势也不明显;[MPIM][I]与石墨烯氧化物作用时咪唑环与烷基链的结果与添加石墨烯时几乎相同.石墨烯氧化物具有羟基、羧基、环氧基等共价键结在其表面,这些羟基会扰动[MPIM][I]中的咪唑环与烷基链,导致在常压下振动频率发生蓝移,进而表明石墨烯表面的官能基团会与离子液体产生相互作用.     

氧化石墨烯与淀粉样短肽相互作用的理论研究

利用副本交换分子动力学方法,对比研究了淀粉样短肽Aβ_(16-22)在加入石墨烯以及氧化石墨烯前后的聚集状况.我们发现相比石墨烯,氧化石墨烯能够明显地抑制淀粉样短肽Aβ_(16-22)的聚集.其原因是氧化石墨烯与Aβ_(16-22)片段中氨基酸的疏水相互作用以及氧化石墨烯表面的极性基团与Aβ_(16-22)形成的氢键大大地弱化了Aβ_(16-22)氨基酸链间的相互作用,最终抑制了Aβ_(16-22)的纤维化.我们的研究将为基于碳纳米颗粒治疗淀粉样变性病的药物设计与开发提供新思路.     

基于温度的亚稳态氧化石墨烯性能

单片层氧化石墨烯由于其优异的物理化学性能,在离子和分子筛选、水脱盐和净化、气体分离、生物传感、质子导体、锂电池和超级电容等领域有巨大的潜在应用.然而普遍采用的Hummers法等化学、物理方法制备的氧化石墨烯是一种亚稳态材料.其最终形态的物理化学性能的转变与调控至关重要,亟需系统研究.本文采用恒温处理方法对氧化石墨烯亚稳态的转变进行调控,利用X射线光电子吸收谱、傅里叶红外吸收谱、扫描电子显微镜等方法检测氧化石墨烯含氧基团的含量、类型和形貌与温度的变化关系,并利用Zeta电位、紫外吸收谱、拉力测试分析温度对氧化石墨烯在转变过程中的溶液悬浮稳定性、光子能带、拉伸强度等性能的影响.所得定量测试结果发现,氧化石墨烯亚稳态的转变过程中存在环氧减少、羟基增加,以及整体含氧量下降的现象,而在此过程中氧化石墨烯的单片层形貌并无明显变化.但是这种结构的转变使得悬浮液黏稠度和亲水性大幅度增强,能带减小和拉伸强度增强效应明显.而当转变过程足够长时,氧化石墨烯的亲水性转而下降,并出现沉淀现象,表明羟基之间进一步发生了脱水转变.另外,本文还分析了恒温处理的时间、悬浮液的浓度对这种转变过程的影响.相关研究结果有利于理解亚稳态氧化石墨烯悬浮液随温度变化的性能转变,对氧化石墨烯具体应用有一定参考价值.     

硅基材料界面石墨烯片层运动行为及其摩擦特性

应用从头算分子动力学方法,模拟了在挤压剪切作用下石墨烯片层作为润滑剂添加于硅基材料界面的摩擦过程,研究了水分子和石墨烯表面氧化对石墨烯片层运动行为的影响.干燥环境下,压强较大时单纯石墨烯片层才会出现滑移,而氧化石墨烯片层在低压强下就开始滑移.潮湿环境下,界面结构影响水分子的整体分布和运动状态,而水分子的运动状态又影响氧化石墨烯片层的运动行为.由于二氧化硅表面羟基取向角较大,使得水分子在挤压剪切作用下偶极矩角变大,从而导致其与氧化石墨烯片层之间的结合强度削弱,二者之间出现相对滑移.石墨烯片层运动行为的改变引起了剪切面的转变.通过对石墨烯片层沿滑移方向上的速度波动幅度的分析,发现其与摩擦系数之间存在正相关性.     

基于芯-电子结合能偏移的碱金属中的表面、尺寸和热效应

还原氧化石墨烯是大规模生产石墨烯的前体;然而迄今为止,还原氧化石墨烯的电子结构还没有达成共识. 本文运用从头分子动力学方法研究羟基在石墨烯表面的吸附过程. 在吸附过程中,OH基团首先在位于两个碳原子桥位上方形成物理吸附络合物,然后翻越过渡态,最终被吸附在一个碳原子的顶位位点. 结果显示5×5石墨烯表面最多可以吸附6个羟基,表明石墨烯表面羟基的覆盖率约为12%. 计算结果还显示,负吸附能随着羟基吸附数目的增加而线性增加,带隙也随着羟基吸附数目的增加而线性增加.     

基于芯-电子结合能偏移的碱金属中的表面、尺寸和热效应（英文）

还原氧化石墨烯是大规模生产石墨烯的前体;然而迄今为止,还原氧化石墨烯的电子结构还没有达成共识.本文运用从头分子动力学方法研究羟基在石墨烯表面的吸附过程.在吸附过程中,OH基团首先在位于两个碳原子桥位上方形成物理吸附络合物,然后翻越过渡态,最终被吸附在一个碳原子的顶位位点.结果显示5×5石墨烯表面最多可以吸附6个羟基,表明石墨烯表面径基的覆盖率约为12%.计算结果还显示,负吸附能随着羟基吸附数目的增加而线性增加,带隙也随着羟基吸附数目的增加而线性增加.     

化学溶液沉积制备氧化石墨烯掺杂YBCO薄膜

YBCO薄膜在液氮温区具有优异的性能,围绕低成本溶液沉积技术和新型添加剂的研究是目前研究热点.采用化学溶液沉积技术成功制备出氧化石墨烯掺杂YBCO薄膜。通过在YBCO前驱液中引人氧化石墨烯,改变YBCO胶体的热解行为,促进YBCO前驱体的分解.在晶化过程中,氧化石墨烯有利于抑制YBCO晶粒长大.结果表明,适量添加氧化石墨烯可以改善YBCO薄膜的微观形貌和外延生长,提高超导层的性能.     

石墨烯/硅肖特基太阳能电池的光电特性

以甲烷作为反应气体,利用化学气相沉积法在硅衬底表面上沉积石墨烯薄膜,制备了石墨烯/硅肖特基太阳能电池.利用原子力显微镜和拉曼光谱观察了石墨烯薄膜的表面形貌,并用紫外-可见光光谱仪和光-电流测试仪器研究了石墨烯样品和太阳电池的光电特性.实验结果表明:制备的石墨烯薄膜厚度为几个原子层,薄膜表面均匀,并具有良好的电学特性,石墨烯/硅太阳能电池的能量转换效率可达3.7%.     

Behavior of oxygen in zinc oxide films through thermal annealing and its effect on sheet resistance

Behavior of oxygen in sputtering deposited ZnO films through thermal annealing and its effect on sheet resistance of the films were investigated. The crystallinities of the ZnO film were improved by post-deposition annealing in vacuum. However, the sheet resistance of ZnO film was dramatically decreased after post-deposition annealing in vacuum at more than 300 °C, while O₂ desorbed from the film. The oxygen vacancies which acted as donors were formed by the thermal annealing in vacuum. The sheet resistance of the films was recovered by annealing in oxygen ambient. In this paper, ¹⁸O₂ gas as an oxygen isotope was used as the annealing ambient in order to distinguish from ¹⁶O, which was constituent atom of the ZnO films. SIMS analysis revealed that ¹⁸O diffused into the ZnO film from the top surface by ¹⁸O₂ annealing. Therefore oxygen vacancies formed by the post-deposition annealing in vacuum could be compensated by the annealing in oxygen ambient.     

Tuning of electronic properties and dynamical stability of graphene oxide with different functional groups

The structural, electronic and vibrational properties of graphene oxide (GO) with varying proportion of epoxy and hydroxyl functional groups have been studied using density functional theory. The functional groups and oxygen density have an obvious influence on the electronic and vibrational properties. The dependence of band gap on associated functional groups and oxygen density shows a possibility of tuning the band gap of graphene by varying the functional groups as well as oxidation level. The absorption of high oxygen content in graphene leads to the gap opening and resulting in a transition from semimetal to semiconductor. Phonon dispersion curves show no imaginary frequency or no softening of any phonon mode throughout the Brillouin zone which confirms the dynamical stability of all considered GO models. Different groups and different oxygen density result into the varying characteristics of phonon modes. The computed results show good agreement with the experimental observations. Our results present interesting possibilities for engineering the electronic properties of graphene and GO and impact the fabrication of new electronics.     

Growth and Auger electron spectroscopy characterization of donut-shaped ZnO nanostructures

Zinc oxide (ZnO) nanodonuts have been obtained by vapor phase transport process utilizing a mixture of ZnO, graphite and erbium oxide powder as the evaporation source. ZnO nanodonuts prepared under various thermal processes indicate that ZnO nanodonuts start forming during the initial thermal ramp up stage. A subsequent holding of the growth temperature at 1000 °C causes the nanodonut to evolve into perfectly donut-shaped nanostructure. Additional deposition of ZnO on top of the nanodonut during the holding of the furnace temperature at 1000 °C result in partially filled nanodonuts or hemispherical nanostructures, or donuts that are completely buried beneath ZnO film. Auger electron spectroscopy depth profile analysis indicates that the deposited ZnO film is stoichiometric, whereas the nanodonuts and the completely filled hemispherical nanostructures are porous and are oxygen deficient. The volume density of the nanodonut is estimated to be 20% that of the background ZnO film.     

Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

Cu/ZnO/n⁺-Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n⁺-Si structures were investigated as a function of oxygen partial pressure during ZnO deposition. Reproducible resistive switching characteristics were observed in ZnO thin films deposited at 20%, 33% and 50% oxygen partial pressure ratios while ZnO thin film deposited at 10% oxygen partial pressure ratio did not show resistive switching behavior. The conduction mechanisms in high and low resistance states are dominated by space-charge-limited conduction and ohmic behavior respectively, which suggests that resistive switching behaviors in such structures are related to filament formation and rupture. It is also found that the reset current decreases as oxygen partial pressure increases, due to the variation of oxygen vacancy concentration in the ZnO thin films.     

Characteristics of ZnO-Cu-ZnO multilayer films on copper layer properties

ZnO/Cu/ZnO multilayers on glass with different copper layer thickness were prepared by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Cu. Different optimization procedure were used for good transparent conductive film. Several analytical tools such as spectrophotometer, scanning electron microscope (SEM), four point probes were used to explore the causes of the changes in electrical and optical properties. The sheet resistance of the structure was severely influenced by the deposition condition of both top ZnO and intermediate Cu layer. Effect of substrate temperature and annealing treatment on ZnO and Cu layer was analyzed. A sheet resistance of 10 Ω/sq and transmittance over 85% at 580 nm wavelength was achieved and could be reproduced by controlling the preparation process parameter. The results of an optimization condition of both oxide layers and metallic Cu layers are illustrated.     

Oxygen-driven unzipping of graphitic materials

Optical microscope images of graphite oxide (GO) reveal the occurrence of fault lines resulting from the oxidative processes. The fault lines and cracks of GO are also responsible for their much smaller size compared with the starting graphite materials. We propose an unzipping mechanism to explain the formation of cracks on GO and cutting of carbon nanotubes in an oxidizing acid. GO unzipping is initiated by the strain generated by the cooperative alignment of epoxy groups on a carbon lattice. We employ two small GO platelets to show that through the binding of a new epoxy group or the hopping of a nearby existing epoxy group, the unzipping process can be continued during the oxidative process of graphite. The same epoxy group binding pattern is also likely to be present in an oxidized carbon nanotube and cause its breakup.     

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

In situ and ex situ oxygen plasma treatment (OPT) were applied to treat ZnO thin films deposited by thermal atomic layer deposition (T-ALD), and the resistive switching (RS) behaviors of the films were investigated. For the in situ OPT, the treatment was applied after each T-ALD cycle. For the ex situ OPT, the treatment was applied on the as-grown film. The T-ALD-grown ZnO films were defect-rich and conductive with no RS behavior. After the OPT process, the resistivity of the films increased drastically, which is believed to be mainly due to the removal of hydrogen impurities, and the films showed bipolar RS characteristics. The dominant conduction mechanisms are the trap-controlled space charge limited current and ohmic behavior at different field regions. The RS behavior was induced upon the formation/disruption of the conducting filaments. Owing to the homogeneous chemical composition and fewer defects, the resistance ratio of the in situ OPT ZnO film is higher than that of the ex situ OPT film, implying that the in situ OPT method is an efficient way to fabricate resistive random access memory devices using the ALD-grown ZnO films.     

First-principles insight into Li and Na ion storage in graphene oxide

The structural, electronic, and adsorption properties of Li/Na ions on graphene decorated by epoxy groups are investigated by first-principles calculations based on density functional theory.Our results show that the concentration of epoxy groups remarkably affects the structural and electronic properties of graphene.The bandgaps change monotonically from0.16 eV to 3.35 eV when the O coverage increases from 12.5% to 50%(O/C ratio).Furthermore, the highest lithiation potential of 2.714 V is obtained for the case of graphene oxide(GO) with 37.5 % O coverage, while the highest sodiation potential is 1.503 V for GO with 12.5% O coverage.This clearly demonstrates that the concentration of epoxy groups has different effects on Li and Na storage in GO.Our results provide a new insight into enhancing the Li and Na storage by tuning the concentration of epoxy groups on GO.     

Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO_1?x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen vacancy content in ZnO films will lead to forming-free and narrower distributions of switching parameters (set and reset voltage, high and low resistance states). It indicates that controlling the initial oxygen vacancy content was an effective method to enhance the URS performance.     

氧空位对ZnO基(110)二维膜材料电子结构的影响研究

在密度泛函理论方法的基础上,系统研究了本征氧化锌和氧空位氧化锌的(110)二维膜材料的形成和电子结构性质.计算分析结果表明,ZnO的本征(110)二维膜比氧空位的(110)二维膜稳定性高,ZnO的(110)二维膜有失去氧的倾向.本征ZnO的(110)膜为直接带隙型材料,带隙宽度为2.3 eV,氧空位(110)膜为间接带隙型材料,带隙宽度为1.877 eV.氧空位的(110)膜导带向下移动,并且导带中的能级简并化.氧空位(110)膜材料的导带底能级有2个能谷,分别位于1.877 eV和1.88 eV,这些位置的能级有效质量比本征膜大幅度增大,这些位置的电子速度普遍较低. ZnO的(110)膜产生氧空位之后,Zn的s电子参与形成其价带顶能级.氧空位(110)膜材料中Zn-O键的混合型结合倾向增大.