Dual-function terahertz metasurface based on vanadium dioxide and graphene

A dual-function terahertz metasurface based on VO₂ and graphene is proposed in this paper. It consists of a gold layer embedded with VO₂ patches, a SiO₂ spacer layer, a VO₂ layer, graphene and a SiO₂ spacer substrate. When the bottom VO₂ layer is in the metallic state, the designed metasurface can achieve absorption. When the top VO₂ patches are in the metallic state, the proposed metasurface can be used as a single-band absorber with terahertz absorptance of 99.7% at 0.736 THz. When the top VO₂ patches are in the insulating state, the designed structure behaves as a dual-band absorber with an absorptance of 98.9% at 0.894 THz and 99.9% at 1.408 THz. In addition, the absorber is polarization insensitive and keeps good performance at large angles of incidence. When the bottom VO₂ is in an insulating state, the metasurface shows electromagnetically induced transparency. The transparent window can be dynamically regulated by controlling the chemical potential of graphene. The proposed metasurface exhibits the advantages of terahertz absorption, electromagnetically induced transparency and dynamic control, which provides more options for the design of terahertz devices in the future.     

Switchable terahertz polarization converter based on VO2 metamaterial

A switchable terahertz (THz) polarization converter based on vanadium dioxide (VO₂) metamaterial is proposed. It is a 5-layer structure which containing metal split-ring-resonator (SRR), the first polyimide (PI) spacer, VO₂ film, the second PI spacer, and metal grating. It is an array structure and the period in x and y directions is 100 μm. The performance is simulated by using finite integration technology. The simulation results show that, when the VO₂ is in insulating state, the device is a transmission polarization converter. The cross-linear polarization conversion can be realized in a broadband of 0.70 THz, and the polarization conversion rate (PCR) is higher than 99%. Under thermal stimulus, the VO₂ changes from insulating state to metallic state, and the device is a reflective polarization converter. The linear-to-circular polarization conversion can be successfully realized in a broadband of 0.50 THz, and the PCR is higher than 88%.     

基于二氧化钒宽、窄带可切换的双功能超材料吸收器研究

本文提出了一种宽、窄带可切换的双功能超材料吸收器.在超材料吸收器的结构中,引入了相变材料二氧化钒(VO2),仅利用单个可切换超表面就能实现不同的功能,其不同功能之间的相互转换通过VO2绝缘态和金属态之间的可逆相变特性实现.当VO2处于金属态时,设计的结构可以看作一个超材料宽带吸收器.仿真结果表明,在1.55THz至2....     

基于VO2薄膜相变原理的温控太赫兹超材料调制器

利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词： 太赫兹超材料 2薄膜')" href="#">VO₂薄膜 调制器 相变     

花状掺杂W-VO$lt;sub$gt;2$lt;/sub$gt;/ZnO热致变色纳米复合薄膜研究

为解决掺杂引起的二氧化钒薄膜的红外调制幅度下降以及二氧化钒复合薄膜相变温度需要进一步降低等问题, 采用纳米结构、掺杂改性和复合结构等多种机理协同作用的方案, 利用共溅射氧化法, 先在石英玻璃上制备高(002)取向的ZnO薄膜, 再在ZnO层上室温共溅射沉积钒钨金属薄膜, 最后经热氧化处理获得双层钨掺杂W-VO₂/ZnO纳米复合薄膜. 利用X射线衍射、X射线光电子能谱、扫描电镜和变温光谱分析等对薄膜的结构、组分、形貌和光学特性进行了分析. 结果显示, W-VO₂/ZnO 纳米复合薄膜呈花状结构, 取向性提高, 在保持掺杂薄膜相变温度(约39 ℃)和热滞回线宽度(约6 ℃)较低的情况下, 其相变前后的红外透过率差量增加近2倍, 热致变色性能得到协同增强. 关键词： 2')" href="#">VO₂ ZnO W掺杂 热致变色     

用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.     

金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

通过引入SiO₂氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO₂薄膜. 详细研究了SiO₂厚度对VO₂薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO₂缓冲层能够有效 消除VO₂薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO₂薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO₂/VO₂-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件. 关键词： 二氧化钒薄膜 相变特性 电致相变 阈值电压     

基于谐振环的太赫兹宽带偏振转换器件研究

提出了一个基于谐振环结构的宽带且高效的太赫兹线偏振转换器.该结构由金属-电介质-金属三层构成,位于顶层的是基于开口谐振环的超表面,中间为介质层,底部为金属板.实验结果表明,该结构可以在0.59-1.24 THz频率范围内将线偏振的太赫兹波偏振方向旋转90°,转换率超过80%.通过计算该结构在所研究的频率范围内反射光的偏振角和椭圆角,证实了该结构可以在较宽的频率范围内实现高效的线偏振转换.对该结构在偏振转换率高的频率下表面电流和电场进行仿真,分析了高偏振转换率和宽带的机理.同时,研究了该结构的偏振转换率对入射角以及偏振角的依赖性,结果表明该结构在0°-30°入射角范围内、-10°-10°偏振角范围内均有很好的偏振转换性能.     

一款基于多物理场调控的超宽带线-圆极化转换器

为了在微波波段实现可调谐的线-圆极化转换器的设计,结合固态等离子体与二氧化钒设计了一种基于多物理场调控的超宽带线-圆极化转换器,通过改变固态等离子体谐振单元激励状态和人为改变外部温度(T)来实现对该线-圆极化转换器工作频段的调控.采用了全波仿真的方法对该极化转换器的极化转换率曲线、反射相位曲线、轴比曲线、表面电流图进行了计算,并讨论了参数r_1与r_3对轴比的影响.仿真结果表明,当固态等离子体区域均未激励且T68℃时,3 dB轴比频带为14.3—29.7 GHz,相对带宽为70%;当固态等离子体区域均被激励且T68℃时,3 dB轴比频带为14.4—23.4 GHz与28.6—35.9 GHz,相对带宽分别为47.61%和22.64%;当固态等离子体区域未激励且T≥68℃时,3 dB轴比频带为8.4—11.2 GHz与18.7—29.5 GHz,相对带宽分别为28.57%与44.81%.通过改变固态等离子体的激励状态和外部温度,实现了该超宽带线-圆极化转换器工作带宽向高频和低频区域的移动.     

基于狄拉克半金属的可调谐的太赫兹宽频带纯线偏振转换器

本文基于新型材料狄拉克半金属(Dirac semimetals,DSs),设计了一款高纯度宽频带可调谐线偏振转换器,偏振转换率(PCR)超过99%的相对带宽为15.72%。在频段5.25~6.14 THz内,椭度角接近0°,偏振方位角约等于-90°。这种转换性能主要是源于顶层超表面的各向异性和局域的表面等离子体激元谐振(LSPRs)的激发。此外,通过改变费米能的大小可以使所设计的偏振转换器在不同的频带范围内实现宽频带偏振转换。最后,通过半解析的方法对偏振转换特性进行了理论分析。该设计在太赫兹通信、成像、无损检测等领域具有一定的应用价值,同时为宽频带可调谐太赫兹线偏振转换器的设计提供了新思路。     

电场诱导二氧化钒绝缘-金属相变的研究进展

二氧化钒(VO_2)是电子强关联体系的典型代表,其晶体结构在特定阈值的温度、电场、光照和压力等物理场作用下会发生由单斜金红石结构向四方金红石结构的可逆转变,从而引发绝缘-金属相变.其中,电场诱导VO_2绝缘-金属相变后的电导率可提高2-5个数量级,在可重构缝隙天线、太赫兹辐射以及智能电磁防护材料等领域具有广阔的应用前景,成为近年来人们的研究热点.首先,简要概述了VO_2发生绝缘-金属相变时晶体结构和能带结构的变化,进而从电场诱导VO_2绝缘-金属相变的研究方法、响应时间、临界阈值场强调控以及相变机理几个方面系统总结和评述了近年来国内外学者在该领域的重要发现和研究进展.最后,指出了当前VO_2绝缘-金属相变研究存在的问题,并展望了未来的发展方向.     

An ultra-broadband and highly-efficient tunable terahertz polarization converter based on composite metamaterial

A near perfect, ultra-broadband and highly-efficient terahertz reflective polarization converter based on multilayer metamaterial is proposed in this paper. The hybrid metamaterial unit structure consists of a split-ring metal pattern and a metal sheet separated by a dielectric resonator spacer. The polarization conversion ratio (PCR) is above 90% from 2.06 to 4.26 THz, with an optimal range between 2.98 and 4.16 THz where the efficiency is above 98% for normal incidence. It also shows excellent performance for oblique incidences. Moreover, the working band and the optimized frequency range for the polarization conversion can be manipulated by changing the open angle between the metallic arcs and the substrate thickness, respectively. Based on this design, two types of hybrid metamaterial converters are also investigated to swith off polarization conversion altogether or modify the polarization conversion bandwidth. A polarization converter with temperature controlled PCR is realized by adding a vanadium oxide (VO₂) mask on the designed structure. In addition, by integrating photoconductive silicon islands between the split-ring and metal bar a dual-band polarization converter can be realized. Combining with a polarizer, this window can act as an active THz filter.     

VO2薄膜表面氧缺陷的修复:F4TCNQ分子吸附反应

VO₂表面氧缺陷的存在对VO₂材料具有显著的电子掺杂效应, 极大地影响材料的本征电子结构和相变性质. 通过2, 3, 5, 6-四氟-7, 7', 8, 8'-四氰二甲基对苯醌(F₄TCNQ)分子表面吸附反应, 可以有效消除表面氧缺陷及其电子掺杂效应. 利用同步辐射光电子能谱和X射线吸收谱原位研究了修复过程中电子结构的变化以及界面的化学反应, 发现这种方式使得VO₂薄膜样品氩刻后得到的V³⁺失去电子成功地被氧化成原先的V⁴⁺, 同时F₄TCNQ分子吸附引起电子由衬底向分子层转移, 界面形成带负电荷的分子离子物种. 受电化学性质的制约, F₄TCNQ分子吸附反应修复氧缺陷较氧气氛退火更安全有效, 不会引起表面过度氧化形成V₂O₅.     

高温氢退火还原V2O5制备二氧化钒薄膜及其性能的研究

过渡金属氧化物二氧化钒(VO₂)在温度340 K附近会发生金属绝缘体的转变(metal-insulator transition, MIT). 基于金属绝缘体的转变性质, VO₂薄膜材料具有很好的应用前景. 本文首先采用脉冲激光沉积制备了高质量的V₂O₅薄膜, 再通过高温氢退火还原V₂O₅薄膜制备出VO₂多晶薄膜. 研究了不同的退火温度、退火时间、退火气氛对VO₂薄膜制备的影响, 采用X射线衍射、X射线光电子能谱、变温电阻特性测量等手段对样品进行分析, 发现在H₂(5%)/Ar退火气氛下, 在一定的退火温度范围内(500–525 ℃), 退火 3 h, 得到了B相和M相共存的VO₂薄膜, 具有M相的VO₂的MIT特性, 而相同退火温度下退火时间达到4.5 h, 薄膜完全变成B相的VO₂. 通过纯Ar气氛下对B相VO₂再退火, 得到了转变温度为350 K, 电阻突变接近4个数量级的M相的VO₂薄膜. 实现了VO₂的B相和M相的相互转变. 关键词： 2薄膜')" href="#">VO₂薄膜 金属绝缘体转变 氢退火     

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Vanadium dioxide(VO_2) is a strongly correlated material, and it has become known due to its sharp metal–insulator transition(MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO_2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO_2 thin film across MIT are probed by the time-domain thermoreflectance(TDTR) method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO_2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO_2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO_2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO_2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO_2 thin films by the TDTR method without depositing any metal thermoreflectance layer.     

激光辐照VO2薄膜温度场分布及透射特性研究

为了探究VO₂薄膜受激光辐照的温度场分布,以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值,并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真,然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO₂薄膜利用分子束外延法在Al₂O₃基底上制备得到。仿真结果表明,激光功率密度为25 W·mm^-2时,50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO₂薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 W·mm^-2和5.39 W·mm^-2。30 nm厚VO₂薄膜对1 064 nmn激光的透过率调制深度约为13%,对3 459 nm激光透过率调制深度约62%,说明VO₂薄膜对近红外透过率调制特性不明显。     

Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors

Vanadium oxide films with temperature coefficient of resistant of −2.6% K⁻¹ have been fabricated on Si₃N₄-film-coated Si substrates by ion beam sputtering in a controlled Ar/O₂ atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VO_x film is a metastable phase of vanadium dioxide (VO₂(B)) and the VO₂(B) film can be transformed into VO₂ film by post-growth annealing at 450 °C in flowing Ar atmosphere.     

激光在大气中驱动的强太赫兹辐射的理论和实验研究

两束双色激光脉冲能在大气中产生MV/cm的强太赫兹波.本文主要介绍了我们最近的三项理论和实验工作,澄清了双色激光方案的物理机制这个长期存在的问题,并对该方案进行了推广.为了在气体中有效地产生太赫兹波,在广泛研究的双色激光方案中两束激光的频率比ω_2/ω_1总是被取为1:2.首先从理论上预测采用其他频率比时,此方案仍能有效地工作,并通过实验进行证实.实验上观察到在新的频率比ω_2/ω_1=1:4,2:3下,也能有效地产生太赫兹波;观察到通过旋转较长波长的激光脉冲的偏振方向,能够有效地调节太赫兹波的偏振,但是旋转波长较短的激光脉冲的偏振方向,太赫兹波的偏振几乎没有变化,这违背了多波混频理论中极化率张量对称性的要求;采用不同的频率比时,太赫兹能量定标率并没有显示出明显的区别,这与多波混频理论预测的能量定标率不符.这些实验结果与等离子体电流模型及粒子模拟结果符合得很好.因此,该研究不仅对双色激光方案进行了推广,而且证实了其物理机制应该归结为等离子体电流模型.     

基于FTO/VO2/FTO结构的VO2薄膜电压诱导相变光调制特性

采用直流磁控溅射和后退火工艺在掺氟的SnO₂(FTO)导电玻璃衬底上制备VO₂薄膜, 研究了不同退火时间和不同比例的氮氧气氛对VO₂薄膜性能的影响, 对VO₂薄膜的结晶取向、表面形貌、表面元素的相对含量和透过率随波长变化进行了测试分析, 结果表明在最佳工艺条件下制备得到了组分相对单一的VO₂薄膜. 基于FTO/VO₂/FTO结构在VO₂薄膜两侧的透明导电膜上施加电压并达到阈值电压时, 观察到了明显的电流突变. 当接触面积为3 mm×3 mm时, 阈值电压为1.7 V, 阈值电压随接触面积的增大而增大. 与不加电压的情况相比, FTO/VO₂/FTO结构在电压作用下高低温的红外透过率差值可达28%, 经反复施加电压, 该结构仍保持性能稳定, 具有较强的电致调控能力.     

Actively tunable dual-broadband graphene-based terahertz metamaterial absorber

A tunable metamaterial absorber (MA) with dual-broadband and high absorption properties at terahertz (THz) frequencies is designed in this work. The MA consists of a periodic array of flower-like monolayer graphene patterns at top, a SiO₂ dielectric spacer in middle, and a gold ground plane at the bottom. The simulation results demonstrate that the designed MA has two wide absorption bands with an absorption of over 90% in frequency ranges of 0.68 THz-1.63 THz and 3.34 THz-4.08 THz, and the corresponding relative bandwidths reach 82.3% and 20%, respectively. The peak absorptivity of the absorber can be dynamically controlled from less than 10% to nearly 100% by adjusting the graphene chemical potential from 0 eV to 0.9 eV. Furthermore, the designed absorber is polarization-insensitive and has good robustness to incident angles. Such a high-performance MA has broad application prospects in THz imaging, modulating, filtering, etc.