电子温度各向异性对霍尔推力器中等离子体与壁面相互作用的影响

为进一步揭示霍尔推力器放电通道饱和电子温度高达50—60 eV的原因,利用二维粒子模拟方法研究了霍尔推力器中电子温度各向异性对等离子体与壁面相互作用的影响,统计了等离子体与壁面相互作用的重要物理量,如电子与壁面的碰撞频率、通道电子在壁面的能量沉积及二次电子对通道电子的冷却.结果表明,当电子温度较低时,电子温度各向异性对等离子体与壁面相互作用的影响较小;当电子温度大于24 eV时,等离子体与壁面相互作用明显增强,并且电子温度各向异性会显著地降低电子与壁面的碰撞频率,减小电子在壁面的能量沉积,减弱鞘层对通道电子的冷却效应.电子温度的各向异性通过减弱通道电子与壁面的相互作用,有利于提高霍尔推力器放电通道的饱和电子温度.     

电子温度对霍尔推进器等离子体鞘层特性的影响

采用二维粒子模拟方法研究了霍尔推进器通道中电子温度对等离子体鞘层特性的影响, 讨论了不同电子温度下电子数密度、鞘层电势、电场及二次电子发射系数的变化规律. 结果表明: 当电子温度较低时, 鞘层中电子数密度沿径向方向呈指数下降, 在近壁处达到最小值, 鞘层电势降和电场径向分量变化均较大, 壁面电势维持一稳定值不变, 鞘层稳定性好; 当电子温度较高时, 鞘层区内与鞘层边界处电子数密度基本相等, 而在近壁面窄区域内迅速增加, 壁面处达到最大值, 鞘层电势变化缓慢, 电势降和电场径向分量变化均较小, 壁面电势近似维持等幅振荡, 鞘层稳定性降低; 电子温度对电场轴向分量影响较小; 随电子温度的增大, 壁面二次电子发射系数先增大后减少. 关键词： 霍尔推进器 等离子体鞘层 电子温度 粒子模拟     

壁面二次电子发射对霍尔推力器放电通道绝缘壁面双鞘特性的影响

为进一步揭示霍尔推力器放电通道绝缘壁面鞘层的特性, 利用考虑了壁面二次电子分布函数的一维稳态流体鞘层模型, 研究了壁面二次电子发射对近壁双鞘特性的影响. 分析结果表明, 由于壁面发射的二次电子对近壁鞘层中的电子密度有增加作用, 存在一个临界二次电子发射系数σ_dc使得: 当σ≤σ_dc时, 鞘层为单层的正离子鞘结构; 当σ>σ_dc时, 鞘层表现为双层的正离子鞘和电子鞘相连结构, 连接点对应于垂直于壁面方向上电势分布的拐点. 然而, 当σ进一步增大到0.999时, 鞘层转变为三层的正离子鞘-电子鞘-正离子鞘交替结构. 数值结果表明: 随着σ的增加, 电子鞘与离子鞘的连接点向远离壁面的方向移动, 电子鞘的厚度逐渐增加; 随着壁面出射电子能量系数a的增加, 近壁区鞘层的厚度也逐渐增加. 关键词： 霍尔推力器 双鞘 壁面二次电子发射     

二次电子分布函数对绝缘壁面稳态鞘层特性的影响

由于缺乏详细的理论计算和实验结果,在研究绝缘壁面稳态流体鞘层特性时,通常假设壁面出射的总二次电子服从单能分布(0)、半Maxwellian分布等.在单能电子轰击壁面的详细二次电子发射模型基础上,采用Monte Carlo方法统计发现:当入射电子服从Maxwellian分布时,绝缘壁面发射的总二次电子服从三温Maxwellian分布.进而,采用一维稳态流体鞘层模型进行对比研究,结果表明:二次电子分布函数对鞘边离子能量、壁面电势、电势及电子/离子密度分布等均具有明显影响;总二次电子服从三温Maxwellian分布时,临界空间电荷饱和鞘层无解,表明随着壁面总二次电子发射系数的增加,鞘层直接从经典鞘层结构过渡到反鞘层结构.     

霍尔推进器壁面材料二次电子发射及鞘层特性

霍尔推进器放电通道等离子体与壁面相互作用形成鞘层,不同壁面材料的二次电子发射对推进器鞘层特性具有重要影响,本文针对推进器壁面鞘层区域建立二维物理模型,研究了氮化硼(BN)、碳化硅(SiC)和三氧化二铝(Al_2O_3)三种不同壁面材料的二次电子发射特性,在改进SiC材料二次电子发射模型的基础上,采用粒子模拟方法,讨论了壁面二次电子发射系数与电子温度和磁场强度的关系,研究了三种材料(BN,SiC和Al_2O_3)的鞘层特性,结果表明:修正的二次电子发射模型拟合曲线与实验曲线几乎一致;在相同电子温度下,三种材料(BN,SiC和Al_2O_3)的二次电子发射系数和壁面电子数密度依次增大,而鞘层电场和鞘层电势降依次减小,BN材料具有合适的二次电子发生射系数,使得霍尔推进器能在低电流下稳态工作。     

Hall推力器内饱和鞘层下电子与壁面碰撞频率特性

利用二维粒子模拟方法研究Hall推力器内电子与壁面的碰撞频率.研究发现,饱和鞘层状态下的电子与壁面的碰撞频率较经典鞘层下大大增加,甚至高出经典鞘层状态下电子与壁面碰撞频率两个数量级,这样饱和鞘层状态下电子与壁面的碰撞频率对近壁电流的贡献将不容忽略.进一步分析造成饱和鞘层状态下电子与壁面碰撞频率增加的原因后认为,饱和鞘层状态下电子与壁面碰撞频率的增加是鞘层电势降过低和壁面发射的二次电子回流造成的. 关键词： 饱和 鞘层 碰撞 频率     

霍尔推进器中磁化二次电子对鞘层特性的影响

为进一步研究霍尔推进器壁面二次电子发射对推进器性能的影响,采用流体模型数值模拟了二次电子磁化效应的等离子体鞘层特性.得到二次电子磁化鞘层的玻姆判据.讨论了不同的磁场强度和方向、二次电子发射系数以及不同种类等离子体推进器的鞘层结构.结果表明:随器壁二次电子发射系数的增大,鞘层中粒子密度增加,器壁电势升高,鞘层厚度减小;鞘层电势及粒子密度随着磁场强度和方位角的增加而增加;而对于不同种类的等离子体,壁面电势和鞘层厚度也不同.这为霍尔推进器的磁安特性实验提供了理论解释. 关键词： 霍尔推进器 磁鞘 二次电子     

具有非广延分布电子的碰撞等离子体磁鞘的结构

很多关于等离子体鞘层的研究工作都是基于电子满足经典的麦克斯韦速度分布函数,而等离子体中的粒子具有长程电磁相互作用,使用Tsallis提出的非广延分布来描述电子更为恰当.本文建立一个具有非广延分布电子的碰撞等离子体磁鞘模型,理论推导出受非广延参数q影响的玻姆判据,离子马赫数的下限数值会随着参数q的增大而减小.经过数值模拟,发现与具有麦克斯韦分布(q=1)电子的碰撞等离子体磁鞘对比,具有超广延分布(q<1)和亚广延分布(q>1)电子的碰撞等离子体磁鞘的结构各有不同,包括空间电势分布、离子电子密度分布、空间电荷密度分布.模拟结果显示非广延分布的参数q对碰撞等离子体磁鞘的结构具有不可忽略的影响.希望这些结论对相关的天体物理、等离子体边界问题的研究有参考价值.     

电子的非广延分布对等离子体鞘层中二次电子发射的影响

采用一维流体模型研究了非广延分布电子对等离子体鞘层中二次电子发射的影响.通过数值模拟,研究了非广延分布电子对考虑二次电子发射的等离子体鞘层玻姆判据、器壁电势、器壁二次电子临界发射系数以及等离子体鞘层中二次电子密度分布的影响.研究结果发现,当电子分布偏离麦克斯韦分布(q=1,广延分布)时,非广延参量q的改变对器壁二次电子发射有着重要的影响.不论电子分布处于超广延(q 1),还是处于亚广延状态(q 1),随着非广延参量q的增加,都会出现鞘边临界马赫数跟着减小,同时对于随着二次电子发射系数的增加,临界马赫数跟着增加.器壁电势随着参量q的增加而增加.器壁二次电子临界发射系数则随着非广延参量的增加而减小,并且等离子体中所含的离子种类质量数越大,非广延参量的变化对器壁二次电子临界发射系数的值影响越小.此外,随着非广延参量的增加,鞘层厚度减小,鞘层中二次电子数密度增加.通过对数值模拟结果分析,发现电子分布处于超广延分布状态对等离子体鞘层中二次电子发射特性的影响要比电子处于亚广延分布状态要更明显.     

霍尔推进器中振荡鞘层对电子与壁面碰撞频率的影响研究

利用二维粒子模拟方法研究振荡鞘层对近壁电导的影响.研究结果表明,当二次电子发射系数大于1时,鞘层处于振荡状态.在振荡鞘层状态下,电子与壁面的碰撞通量沿平行与壁面方向剧烈的周期性振荡,振荡的波长为电子静电波波长量级,电子与壁面的碰撞频率高出经典鞘层状态下电子与壁面碰撞频率1—2个数量级,此时的碰撞频率对通道中电流的贡献不可忽略.振荡鞘层相对与经典鞘层增大了电子与壁面的碰撞频率,但是振荡鞘层的存在,仍然会使一部分慢电子无法穿越鞘层的势垒而打到壁面. 关键词： 霍尔推进器 振荡鞘层 二次电子     

Characteristics of wall sheath and secondary electron emission under different electron temperatures in a Hall thruster

In this paper, a two-dimensional physical model is established in a Hall thruster sheath region to investigate the influences of the electron temperature and the propellant on the sheath potential drop and the secondary electron emission in the Hall thruster, by the particle-in-cell(PIC) method. The numerical results show that when the electron temperature is relatively low, the change of sheath potential drop is relatively large, the surface potential maintains a stable value and the stability of the sheath is good. When the electron temperature is relatively high, the surface potential maintains a persistent oscillation, and the stability of the sheath reduces. As the electron temperature increases, the secondary electron emission coefficient on the wall increases. For three kinds of propellants(Ar, Kr, and Xe), as the ion mass increases the sheath potentials and the secondary electron emission coefficients reduce in sequence.     

One-dimensional solution to the stable, space-charge-limited emission of secondary electrons from plasma-wall interactions

Numerical solutions to the stable, space-charge-limited emission of secondary electrons from plasma-wall interaction are found based on one-dimensional plasma moment equations that assume cold ions, Maxwellian electrons and cold secondary electrons. The numerical method finds a range of plasma parameters that permit stable emission of secondary electrons in the absence of normal electric fields to the wall. These solutions were not obtained with previous method that solves only for the marginally stable plasma sheath. Range of the ion Mach number at the sheath edge, the floating wall potential relative to the plasmas, and secondary electron emission coefficients corresponding to the vanishing normal electric fields are found for hydrogen, argon and xenon plasmas. The results show that a relatively small range of secondary electron emission coefficient exists to allow stable sheaths structures along with larger ranges of ion injection speed at the sheath edge and floating potential of the emitting wall.     

Heat flow through a plasma sheath in the presence of secondary electron emission from plasma‐wall interaction

The formation of a plasma sheath in front of a negative wall emitting secondary electron is studied by a one‐dimensional fluid model. The model takes into account the effect of the ion temperature. With the secondary electron emission (SEE ) coefficient obtained by integrating over the Maxwellian electron velocity distribution for various materials such as Be, C, Mo, and W, it is found that the wall potential depends strongly on the ion temperature and the wall material. Before the occurrence of the space‐charge‐limited (SCL ) emission, the wall potential decreases with increasing ion temperature. The variation of the sheath potential caused by SEE affects the sheath energy transmission and impurity sputtering yield. If SEE is below SCL emission , the energy transmission coefficient always varies with the wall materials as a result of the effect of SEE , and it increases as the ion temperature is increased. By comparison of with and without SEE , it is found that sputtering yields have pronounced differences for low ion temperatures but are almost the same for high ion temperatures.     

Active Plasma Boundary Sheath with Electron Emission

The influence of electron emission on the properties of the space charge sheath between plasma and wall is investigated theoretically using models of the stationary sheath. Especially, the following effects have been considered: Essential parameters of the sheath (e.g. potential drop, power flux density), of the wall surface (temperature, field strength, emission yield, Joule heat generation) and of the adjacent plasma layer (emission-caused change of the electron temperature) have been calculated under self-consistent conditions. From the obtained results several ways are discusséd indicating the development towards sheath instability and ending in the generation of plasma-induced arc spots.     

Tonks-Langmuir problem for a bi-Maxwellian plasma

An analytical solution of the Tonks-Langmuir (TL) problem with a bi-Maxwellian electron energy distribution function (EEDF) is obtained for a plasma slab. The solution shows that the ambipolar potential, the plasma density distribution, and the ion flux to the wall are mainly governed by the cold electrons, while the ionization rate and voltage drop across the wall sheath are governed by the hot electrons. The ionization rate by direct electron impact is found to be spatially rather uniform, contrary to the T-L solution where it is proportional to the plasma density distribution. The temperature of hot electrons defined by the ionization balance is found to be close to that of the T-L solution for a mono-Maxwellian EEDF, and is in reasonable agreement with experiments carried out in a low pressure capacitance RF discharge. The energy balance for cold electrons in this discharge shows that their heating by hot electrons via Coulomb interaction is equalized by the cold electrons' escape to the RF electrodes during collapse of the RF sheath     

Nonlinear collisional monte carlo simulations for high-temperature SOL plasma

A nonlinear Monte Carlo collisional model is applied to to investigate scrape-off layer (SOL) plasmas with high temperatures. In the proposed SOL modeling, A steady state SOL plasma, which satisfies the particle and energy balances and neutrality constraint, is determined in terms of total particle and heat fluxes across the separatrix, the edge plasma temperature, the secondary electron emission coefficient, and the SOL size. A conductive heat flux into the SOL is effectively modeled via random exchange of source particles and the SOL plasma particles. It is found that the potential drop and the electron transmission factor in the collisional SOL plasma are in good agreement with the theoretical prediction. The cooling effect of secondary electrons in the high temperature divertor operation is investigated. In such a collisionless plasma, the present nonlinear collision model is useful because the electron distribution function deviates far from a Maxwellian distribution. In the presence of strong secondary electron emission, the electron sheath energy transmission factor in the collisionless regime is found to be significantly smaller than that in the collisional regime. This fact suggests that a high-temperature divertor operation can be possible.