考虑界面散射的金属纳米线热导率修正

理论分析了声子和电子输运对Cu, Ag金属纳米线热导率的贡献. 采用镶嵌原子作用势模型描述纳米尺寸下金属原子间的相互作用, 应用平衡分子动力学方法和Green-Kubo函数模拟了金属纳米线的声子热导率; 采用玻尔兹曼输运理论和Wiedemann-Franz定律计算电子热导率; 并通过散射失配模型和Mayadas-Shatzkes模型引入晶界散射的影响. 在此基础上, 考察分析了纳米线尺度和温度的影响. 研究结果表明: Cu, Ag纳米线热导率的变化规律相似; 电子输运对金属纳米线的导热占主导地位, 而声子热导率的贡献也不容忽视; 晶界散射导致热导率减小, 尤其对电子热导率作用显著; 纳米线总热导率随着温度的升高而降低; 随着截面尺寸减小而减小, 但声子热导率所占份额有所增加. 关键词： 纳米线 热导率 表面散射 晶界散射     

纳米线阵列横向输运的热电特性研究

利用包络函数的平面波展开法计算准二维纳米线阵列中的电子态,获得电输运系数表达式.同时,通过合理近似考虑边界散射对声子输运的影响,计算得到了晶格热导率.以Si/Ge体系为例,研究了纳米线阵列横向输运的热电特性.结果表明：结构优值与费米能级、纳米线直径及间距等参数相关.通过对结构参数的调整,纳米线阵列的横向输运可有效提高热电性能. 关键词： 热电性能 纳米线阵列 Seebeck系数 晶格热导率     

表面低配位原子对声子的散射机制

由于纳米结构具有极高的表体比,声子-表面散射机制对声子的热输运性质起到关键作用.提出了表面低配位原子对声子的散射机制,并且结合量子微扰理论与键序理论推导出该机制的散射率.由于散射率正比于材料的表体比,这种散射机制对声子输运的重要性随着纳米结构尺寸的减小而增大.散射率正比于声子频率的4次方,所以这种散射机制对高频声子的作用远远强于对低频声子的作用.基于声子玻尔兹曼输运方程,计算了硅纳米薄膜和硅纳米线的热导率,发现本文模型比传统的声子-边界散射模型更接近实验值.此发现不仅有助于理解声子-表面散射的物理机制,也有助于应用声子表面工程调控纳米结构的热输运性质.     

多约束纳米结构的声子热导率模型研究

纳米技术的快速发展使得对微纳尺度导热机理的深入研究变得至关重要. 理论和实验都表明, 在纳米尺度下声子热导率将表现出尺寸效应. 基于声子玻尔兹曼方程和修正声子平均自由程的方法得到了多约束纳米结构的声子热导率模型, 可以描述多个几何约束共同作用下热导率的尺寸效应. 不同几何约束对声子输运的限制作用可以分开计算, 总体影响则通过马西森定则进行耦合. 对于热流方向的约束, 采用扩散近似的方法求解声子玻尔兹曼方程; 对于侧面边界约束, 采用修正平均自由程的方法计算边界散射对热导率的影响. 得到的模型能够预测纳米薄膜(法向和面向)及有限长度方形纳米线的热导率随相应特征尺寸的变化. 与蒙特卡罗模拟及硅纳米结构热导率实验值的对比验证了模型的正确性.     

表面粗糙度对薄膜面向热导率的影响研究

通过求解声子辐射输运方程(EPRT)计算得到了薄膜的面向晶格热导率.在薄膜界面采用与声子波长相关的镜反射率模型,考虑了薄膜的厚度、温度和表面粗糙度等对其热导率的影响.结果表明,界面粗糙度对薄膜热导率的影响很大.减小界面粗糙度,会使得薄膜热导率大大增加.另外,薄膜厚度减小使得热导率峰值对应的温度增加.     

类石墨烯氮化碳结构(C3N)热传导机理研究

类石墨烯氮化碳结构(C₃N)作为一种全新的碳基二维半导体材料,由于其优异的机械和电子性能引起了研究者们的广泛关注,不同结构C₃N的热输运和声子输运机制还待进一步研究.本文构造了4种不同结构的C₃N,采用非平衡分子动力学与晶格动力学方法对不同结构的C₃N的热传导机理进行了研究.研究结果表明:1)在4种结构中M3热导率最高,M1次之,M4热导率最低;2)不同结构的C₃N的热导率具有明显的尺寸效应和温度效应.当样本长度较短时,声子主要以弹道输运的方式进行传输;当样本长度增大,扩散输运占主导地位;随着温度的升高,Umklapp散射在热输运中占据主导地位,使得热导率与温度具有1/T的依赖性.3)与M3相比,M1和M4结构中都存在更大的声子带隙,色散曲线进一步软化,低频和高频声子同时出现了局域化的特征,对热导率产生了显著的抑制作用.本文为更好地设计热管理材料提供了思路.     

硅纳米线晶格热导率的理论分析

考虑空间尺度对声子群速度的影响,采用Callaway热导率模型计算了单晶硅纳米线的晶格热导率,讨论了三声子Umklapp过程、电子-声子散射、缺陷-声子散射以及边界-声子散射对热导率的影响.结果表明,纳米线的热导率比体材料小一个数量级,与不考虑受限声子群速度的结果相比,和实验符合得更好.另外,边界散射使得高温区的热导率体现出与温度几乎无关的特性.     

基于界面原子混合的材料导热性能

构造了界面具有原子混合的硅锗(Si/Ge)单界面和超晶格结构.采用非平衡分子动力学模拟研究了界面原子混合对于单界面和超晶格结构热导率的影响,重点研究了界面原子混合层数、环境温度、体系总长以及周期长度对不同晶格结构热导率的影响.结果表明:由于声子的“桥接”机制,2层和4层界面原子混合能提高单一界面和少周期数的超晶格的热导率,但是在多周期体系中,具有原子混合时的热导率要低于完美界面时的热导率;界面原子混合会破坏超晶格中声子的相干性输运,一定程度引起热导率降低;完美界面超晶格具有明显的温度效应,而具有原子混合的超晶格热导率对温度的敏感性较低.     

碳纳米管电缆式复合材料的热导率

通过非平衡分子动力学方法, 对单壁碳管填充金纳米线的碳纳米管电缆式复合材料开展热导率的模拟分析. 采用Tersoff势函数描述碳-碳原子间的相互作用, Lennard-Jones长程作用势描述碳-金原子间的相互作用, 嵌入原子势函数描述金-金原子间相互作用. 研究结果表明: 相同尺寸下, 金纳米线的电子热导率相较于空碳管以及电缆式复合材料的声子热导率小很多, 对复合材料总热导率的贡献可以忽略; 由于管内金纳米线的存在, 其与碳管的相互作用使得碳管碳原子倾向于沿着轴向振动, 声子间U散射随之减少, 声子平均自由程增加, 导致复合材料热导率明显大于空碳管, 在100–500 K温度范围内高出约20%–45%, 但增大幅度随温升呈降低趋势; 复合材料热导率随着管长增加而增大, 变化趋势和空碳管相似, 但其增长幅度更大; 复合材料和空碳管的热导率随管径增大而减小, 且变化幅度基本一致. 关键词： 碳纳米管 纳米线 电缆式复合材料 导热     

不同周期结构硅锗超晶格导热性能研究

构造了均匀、梯度、随机3种不同周期分布的硅/锗(Si/Ge)超晶格结构.采用非平衡分子动力学(NEMD)方法模拟了硅/锗超晶格在3种不同周期分布下的热导率,并研究了样本总长度和温度对热导率的影响.模拟结果表明:梯度和随机周期Si/Ge超晶格的热导率明显低于均匀周期结构超晶格;在不同的周期结构下,声子分别以波动和粒子性质输运为主;均匀周期超晶格热导率具有显著的尺寸效应和温度效应,而梯度、随机周期Si/Ge超晶格的热导率对样本总长度和温度的依赖性较小.     

Low-temperature anisotropy of the thermal conductivity of single-crystal nanofilms and nanowires

The effect of phonon focusing on the phonon transport in single-crystal nanofilms and nanowires is studied in the boundary scattering regime. The dependences of the thermal conductivity and the free path of phonons on the geometric parameters of nanostructures with various elastic energy anisotropies are analyzed for diffuse phonon scattering by boundaries. It is shown that the anisotropies of thermal conductivity for nanostructures made of cubic crystals with positive (LiF, GaAs, Ge, Si, diamond, YAG) and negative (CaF₂, NaCl, YIG) anisotropies of the second-order elastic moduli are qualitatively different for both nanofilms and nanowires. The single-crystal film plane orientations and the heat flow directions that ensure the maximum or minimum thermal conductivity in a film plane are determined for the crystals of both types. The thermal conductivity of nanowires with a square cross section mainly depends on a heat flow direction, and the thermal conductivity of sufficiently wide nanofilms is substantially determined by a film plane orientation.     

Effects of surface charges on phonon properties and thermal conductivity in GaN nanofilms

Surface charges can modify the elastic modulus of nanostructure, leading to the change of the phonon and thermal properties in semiconductor nanostructure. In this work, the influence of surface charges on the phonon properties and phonon thermal conductivity of GaN nanofilm are quantitatively investigated. In the framework of continuum mechanics,the modified elastic modulus can be derived for the nanofilm with surface charges. The elastic model is presented to analyze the phonon properties such as the phonon dispersion relation, phonon group velocity, density of states of phonons in nanofilm with the surface charges. The phonon thermal conductivity of nanofilm can be obtained by considering surface charges. The simulation results demonstrate that surface charges can significantly change the phonon properties and thermal conductivity in a GaN nanofilm. Positive surface charges reduce the phonon energy and phonon group velocity but increase the density of states of phonons. The surface charges can change the size and temperature dependence of phonon thermal conductivity of GaN nanofilm. Based on these theoretical results, one can adjust the phonon properties and temperature/size dependent thermal conductivity in GaN nanofilm by changing the surface charges.     

Effect of Gaussian acoustic nanocavities in a narrow constriction on ballistic phonon transmission

We investigate the effect of Gaussian acoustic nanocavities in a narrow constriction on ballistic phonon transport through a semiconductor nanowire at low temperatures. When the transverse width of acoustic nanocavities takes a Gaussian function, it is found that the resonant peaks and band gaps in transmission spectra are obvious, indicating that the system has selective transmission and filters actions for ballistic phonons. The number and length of nanocavities have significant effects on the phonon transmission and thermal conductance. The results are compared with those in uniform width acoustic nanocavities. The Gaussian acoustic nanocavities are therefore a promising phononic device to manipulate ballistic phonons in nanophononics.     

Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters

In this paper, we synthesize VLS-grown rough Si nanowires using Mn as a catalyst with various surface roughnesses and diameters and measured their thermal conductivities. We grew the nanowires by a combination vapor-liquid-solid and vapor-solid mechanism for longitudinal and radial growth, respectively. The surface roughness was controlled from smooth up to about 37 nm by the radial growth. Our measurements showed that the thermal conductivity of rough surface Si nanowires is significantly lower than that of smooth surface nanowires and decreased with increasing surface roughness even though the diameter of the smooth nanowire was lower than that of the rough nanowires. Considering both nanowires were grown via the same growth mechanism, these outcomes clearly demonstrate that the rough surface induces phonon scattering and reduces thermal conductivity with this nanoscale-hole-free nanowires. Control of roughness induced phonon scattering in Si nanowires holds promise for novel thermoelectric devices with high figures of merit.     

二维Mo2C的晶格热导率的第一性原理研究

Mo2C是构建Mxene基器件的重要材料之一,对Mo2C二维材料声子输运的理解非常必要。文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo2C材料的晶格热导率。研究表明,室温下二维Mo2C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20 和 5.04 W/mK。计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献。还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo2C中的声子群速度和声子弛豫时间对晶格传输有重要的影响。     

多空穴错位分布对石墨纳米带中热输运的影响

利用非平衡格林函数方法研究了石墨纳米带中三空穴错位分布对热输运性质的影响.研究结果发现:三空穴竖直并排结构对低频声子的散射较小,导致低温区域三空穴竖直并排时热导最大,而在高频区域,三空穴竖直并排结构对高频声子的散射较大,导致较高温度区域三空穴竖直并排时热导最小;三空穴的相对错位分布仅能较大幅度地调节面内声学模高频声子的透射概率,而三空穴的相对错位分布能较大幅度地调节垂直振动膜高频声子和低频声子的透射概率,导致三空穴的相对错位分布不仅能大幅调节面内声学模和垂直振动模的高温热导,也能大幅调节垂直振动模的低温热导.研究结果阐明了空穴位置不同的石墨纳米带的热导特性,为设计基于石墨纳米带的热输运量子器件提供了有效的理论依据.     

The effect of the electron-phonon coupling on the thermal conductivity of silicon nanowires

The thermal conductivity of free-standing silicon nanowires (SiNWs) with diameters from 1-3?nm has been studied by using the one-dimensional Boltzmann's transport equation. Our model explicitly accounts for the Umklapp scattering process and electron-phonon coupling effects in the calculation of the phonon scattering rates. The role of the electron-phonon coupling in the heat transport is relatively small for large silicon nanowires. It is found that the effect of the electron-phonon coupling on the thermal conduction is enhanced as the diameter of the silicon nanowires decreases. Electrons in the conduction band scatter low-energy phonons effectively where surface modes dominate, resulting in a smaller thermal conductivity. Neglecting the electron-phonon coupling leads to overestimation of the thermal transport for ultra-thin SiNWs. The detailed study of the phonon density of states from the surface atoms and central atoms shows a better understanding of the nontrivial size dependence of the heat transport in silicon nanowire.     

The effect of surface roughness on lattice thermal conductivity of silicon nanowires

A theoretic model is presented to take into account the roughness effects on phonon transport in Si nanowires (NWs). Based on the roughness model, an indirect Monte Carlo (MC) simulation is carried out to predict the lattice thermal conductivities of the NWs with different surface qualities. Through fitting the experimental data with the MC predictions, the scattering strength on phonons from the boundary, umklapp phonon-phonon processes and impurities can be estimated. It is found that the scattering on phonons by the roughness cell boundaries in a rough nanowire can reduce the phonon mean free path to be smaller than the nanowire diameter, the Casimir limit of the phonon mean free path in a flat nanowire for phonons engaged in completely diffused boundary scattering processes.     

金刚石氮-空位色心的原子自旋声子耦合机理

金刚石氮-空位色心结构因在量子精密测量领域的高灵敏度优势而备受关注.本文引入耦合声子场对氮-空位色心原子自旋进行共振调控,以提高氮-空位色心的自旋跃迁效率.首先,基于波函数和晶格的点阵位移矢量关系,分析了声子与晶格能量交互作用,研究了基于声子共振调控的氮-空位色心的自旋跃迁机理,建立了基于应变诱导的能量转移声子-自旋交互耦合激发模型.其次,基于氮-空位色心晶格振动理论,引入满足布洛赫定理的系数矩阵,建立了不同轴向氮-空位色心第一布里渊区特征区域的声子谱模型.同时,基于德拜模型,考虑热膨胀效应,解析该声子共振系统的声子热平衡性质,并对其比热模型进行研究.最后,基于分子动力学仿真软件CASTEP和密度泛函理论进行第一性原理研究,构建了声子模式下不同轴向氮-空位色心的结构优化模型,并分析了其结构特性、声子特性和热力学特性.研究结果表明,系统声子模式的演化依赖于氮-空位的占位,声子模式强化伴随着热力学熵的降低.含氮-空位色心金刚石的共价键较纯净无缺陷金刚石更弱,热力学性质更不稳定.含氮-空位色心金刚石的声子主共振频段处于THz量级,次共振频率约为[800,1200]MHz.根据次共振频段设计叉指宽度为1.5μm的声表面波共振机构,其中心频率约为930 MHz.在该声子共振调控参数条件下,声子共振调控方法可有效增大氮-空位色心的自旋跃迁概率,实现氮-空位色心原子自旋操控效率的提高.