单原子催化剂Ir1/MoS2表面上的NH3吸附与直接分解的第一性原理

NH₃的催化分解一直是制备高纯度氢的有效途径之一,因此具有良好的催化活性的贵金属被广泛的应用于催化解离的研究中.然而,由于纯金属催化剂的利用效率低,增加催化成本.最近的研究发现单原子催化剂Ir₁/MoS₂以其突出的优势被认为是一种潜在的能替代现有贵金属催化剂的材料.本文采用密度泛函理论与周期性平板模型相结合的方法,研究了NH₃在单原子催化剂Ir₁/MoS₂上的吸附与活化.结果表明:NH₃的优势吸附位为Ir原子的顶位,构型为倾斜结构(atop),NH₃与体系表面的金属Ir成键,吸附能达到1.63 eV,是化学吸附;进一步分析了NH₃直接催化分解的反应路径,给出了相应的反应热、活化能,结果显示NH₃在atop位的解离比脱附有利,第一步脱氢反应活化能最小,N-H键易断裂,第二步反应能垒较高,此步为整个反应的决速步.     

La-Ce共掺杂锐钛矿TiO2的缺陷形成能和电子结构分析

采用基于密度泛函的第一性原理研究了稀土元素La、Ce共掺杂锐钛矿相TiO₂的缺陷形成能,缺陷电荷转变能级以及电子结构.研究发现,富氧状态下La、Ce掺杂以及La-Ce共掺的缺陷形成能均为负值,而贫氧状态下La、Ce掺杂形成能为正,表明La、Ce的掺杂TiO₂只能在氧气氛制备条件下进行;替代Ti掺杂缺陷电荷转变能级计算结果表明:0/1-的缺陷电荷转变能级分别位于VBM上面0.522 eV及2.440 eV处;与纯锐钛矿相TiO₂相比,La、Ce单掺杂以及La-Ce共掺杂均能减小TiO₂的禁带宽度,但共掺杂体系的禁带宽度更窄,因此共掺杂体系将更有利于提高TiO₂对可见光的响应能力和光催化性能.     

K,Na掺杂Cu-S纳米晶的水热合成及对结构、性能的影响

利用水热合成技术, 分别以CuCl₂·2H₂O, 硫粉为铜源和硫源, 以KOH或NaOH为矿化剂, 成功合成了Cu₂S纳米晶体和碱金属离子掺杂的KCu₇S₄纳米线和NaCu₅S₃ 微纳米球. 通过X射线衍射(XRD)、电子能谱(EDS)、扫描电镜(SEM)、透射电镜(TEM)和高分辨率透射电镜 (HRTEM) 对产物的结构和形貌进行了表征和分析. 结果显示: KOH含量低于1g或NaOH低于2g时, 产物为斜方辉铜矿Cu₂S; 高碱含量 (不低于3g) 时, K或Na离子成功掺入产物结构中, K掺杂产物为纯净的四方相KCu₇S₄, 单晶结构, 尺寸均匀, 长度可达几十微米的纳米线; Na掺杂未改变产物的形貌, 形成六方晶系结构的NaCu₅S₃. 产物的形成和生长与反应温度、反应时间和矿化剂密切相关. 并讨论了Cu₂S纳米晶及其掺杂纳米晶的形成机理及掺杂机理. 最后研究了碱金属离子掺杂对产物的光学性能的影响, 漫反射光谱显示Cu₂S, KCu₇S₄和NaCu₅S₃纳米晶的光学带隙分别为1.21eV, 0.49eV和0.42eV, K⁺和Na⁺的掺杂, 极大的改变了产物的光学特性. 关键词： 7S₄')" href="#">KCu₇S₄ 5S₃')" href="#">NaCu₅S₃ 水热法 掺杂     

Pu(100)表面吸附CO2的密度泛函研究

采用广义梯度密度泛函理论的改进Perdew-Burke-Ernzerh方法结合周期性层晶模型,研究了CO₂分子在Pu（100）面上的吸附和解离.吸附能和几何构型的计算表明,CO₂以穴位C4O4构型吸附最为有利,吸附能为1.48 eV.布居分析和态密度分析表明,CO₂与Pu表面相互作用的本质主要是CO₂分子的杂化轨道2π_μ与Pu5f,Pu6d,Pu7s轨道通过强电子转移和弱重叠杂化的方式相互作用而生成了新的化学键.计算的CO₂→CO+O解离能垒为0.66 eV,解离吸附能为2.65 eV, 表明在一定热激活条件下CO₂分子倾向于发生解离性吸附.O₂,H₂,CO和CO₂在Pu （100）面吸附的比较分析表明,较低温度下的吸附强度顺序依次为O₂,CO,CO₂,H₂;较高温度下的吸附强度顺序依次为O₂,CO₂,CO,H₂. 关键词： 密度泛函理论 Pu （100） 2')" href="#">CO₂ 吸附和解离     

H2在Al7-团簇解离吸附的理论研究

利用高精度从头计算方法研究了H₂分子在Al₇^-阴离子团簇上的吸附及解离过程, 确定了分子吸附及解离吸附的稳定结构,并分析了各结构的光电子能谱. 计算表明H₂在Al₇^-上为弱的物理吸附,吸附能约为0.02 eV;解离过程的能垒约为0.75 eV. 对团簇及解离吸附结构的态密度与实验得到的光电子能谱的比较表明二者能够很好地符合, 确定H₂与激光烧蚀产生的团簇直接反应时能在Al₇^-上发生解离. 关键词： 7^-')" href="#">Al₇^- 2')" href="#">H₂ 解离吸附 从头计算     

Te掺杂单层MoS2的电子结构与光电性质

采用基于密度泛函理论的第一性原理计算,研究了Te掺杂对单层MoS₂能带结构、电子态密度和光电性质的影响。结果表明,本征单层MoS₂属于直接带隙半导体材料,其禁带宽度为1.64 eV。本征单层MoS₂的价带顶主要由S-3p态电子和Mo-4d态电子构成,而其导带底则主要由Mo-4d态电子和S-3p态电子共同决定;Te掺杂单层MoS₂为间接带隙半导体材料,其禁带宽度为1.47 eV。同时通过Te掺杂,使单层MoS₂的静态介电常数增大,禁带宽度变窄,吸收光谱产生红移,研究结果为单层MoS₂在光电器件方面的应用提供了理论基础。     

硼掺杂增强g-C3N4基单原子催化剂性能的第一性原理研究

单原子催化剂(SACs)以其最大的金属原子利用率和较高的催化活性而备受关注.本文提出了在Mn负载g-C₃N₄单层(Mn/g-C₃N₄)中进行B掺杂的方案来提升单原子催化剂的光催化活性,并利用第一性原理对Mn/B-g-C₃N₄单原子催化剂的晶体结构,电子结构,带边位置和光学性质进行计算.计算结果表明B掺杂具有较强的结构稳定性,带隙变小,同时带隙中出现杂质能级,导致吸收边向可见光区发生红移,提高了g-C₃N₄在太阳光下光吸收能力和光催化活性,研究结果为制备高效的g-C₃N₄基光催化SACs提供了理论指导.     

Cu纳米粒催化CO2还原反应机理的理论研究

此文采用密度泛函理论,研究了Cu₃₈纳米粒催化剂模型,分别研究了CO₂和H₂O分子在催化剂上不同吸附位,确了稳定的吸附构型,并进一步研究了CO₂催化还原反应机理,确定催化剂的活性.本文主要研究催化CO₂还原生成CO过程,研究了两条可行的反应路径,路径I为水分子的H原子直接转移到CO₂上,路径II为H原子先迁移到Cu₃₈纳米粒上再转移到CO₂上,研究结果发现此步反应机理路径I优先.从微观角度解释了实验研究结果.     

过渡族金属掺杂Al(111)表面对氢分子催化分解的影响

为了探求过渡金属催化剂对催化合成储氢材料NaAlH₄效果的影响, 本文采用第一性原理方法研究了多种金属原子取代Al (111)表面铝原子形成的合金表面对氢的催化分解的影响. 计算结果表明, Sc, V, Fe, Ti原子掺杂的表面对氢分子分解具有催化作用. H₂在对应的掺杂表面催化分解所需要的活化能分别为0.54 eV, 0.29 eV, 0.51 eV, 0.12 eV. H原子在Sc, V, Ti掺杂表面扩散需要的活化能分别为0.51 eV, 0.66 eV, 0.57 eV. 同时, 过渡金属掺杂在Al表面时倾向于分散分布, 增加掺杂表面的掺杂原子个数, 掺杂表面的催化效果体现为单个掺杂过渡金属原子的催化效果. 本研究将为金属掺杂Al (111)表面催化加氢合成NaAlH₄提供理论参考.     

电化学析氢反应中单层MoSe2氢吸附机理第一性原理研究

基于密度泛函理论的第一性原理方法,本文计算了单层2H相MoSe₂纳米材料表面及两种边缘（Mo原子边缘、Se原子边缘）不同活性位点、不同氢原子吸附率下的氢吸附吉布斯自由能（Gibbs free energy,用△G_H⁰表示）,并且将对应的微观结构进行了系统分析比较,得出△G_H⁰最接近于0 eV的吸附位点及相应的吸附率.同时,结合差分电荷密度和电负性理论,分析了单层MoSe₂两种边缘氢吸附的电荷转移及成键特性,进一步解释了不同吸附位点呈现的结构与能量趋势.最后,通过基于密度泛函理论的第一性原理分子动力学模拟,研究了高温热运动对两种边缘氢吸附的影响,获得了氢原子发生脱附的临界温度及对应的微观动态过程.该理论研究从原子尺度揭示了单层2H相MoSe₂纳米材料边缘不同位点在不同温度下对氢原子吸附和脱附的微观机理,证实了Mo原子边缘的畸变和重构行为,加深了对实验中单层2H相MoSe₂边缘在不同温度下氢吸附机理的理解,为实验中通过控制MoSe₂边缘设计廉价高效的析氢催化剂提供理论参考.     

Adsorption configurations of carbon monoxide on gold monolayer supported by graphene or monolayer hexagonal boron nitride: a first-principles study

Using density functional theory with a semiempirical van der Waals approach proposed by Grimme, the adsorption behavior of carbon monoxide on a gold monolayer supported by graphene or monolayer hexagonal boron nitride has been investigated. Based on the changes in the Dirac cone of graphene and a Bader charge analysis, we observe that the Au(111) monolayer gains a small charge from graphene and monolayer h-BN. The adsorbed CO molecule adopts similar adsorption configurations on Au(111)/graphene and Au(111)/h-BN with Au-C distance 2.17?2.50 Å and Au-C-O angle of 123.9°–139.6°. Moreover, we found that for low CO coverages, bonding to the gold surface is surprisingly energy-favorable. Yet the CO adsorption binding energy diminishes at high coverage due to the repulsive van der Waals interactions between CO molecules.     

First-principles studies on the Au surfactant on polar ZnO surfaces

The surfactant effect of Au in ZnO nanostructures growth is studied using first-principles slab calculations based on density functional theory. The atomic structure and electronic properties of one monolayer of Au atoms on polar ZnO surfaces are examined. It is found that (1) one monolayer (ML) of Au capping layer on the ZnO polar surfaces may modify the growing properties of ZnO nanostructures by enhancing the binding energy by 0.41 eV/atom for Zn adsorption on the polar surfaces; (2) the Au adlayer on the polar ZnO surfaces seems more active for the adsorption of Zn atoms, which may be at the very heart of the effect that Au acts as catalyst for the growth of the ZnO nanostructures; and (3) total energy calculations show that the gold on-top geometry is energetically favorable than the gold diffused geometry, which may be useful to understand the phenomenon that Au particles are only found at the end of ZnO nanostructures during the growth process.     

Quantitative Auger electron spectroscopy analysis with co-evaporated AuCu films

A method for the quantitative Auger electron spectroscopy (AES) analysis by using a co-evaporation technique is extended to the AuCu system following the previous work. The calibration curves for lower Auger energy have peaks at 60 eV for Cu and at 69 eV for Au, and for higher Auger energy peaks at 239 eV for Au and at 920 eV for Cu. It is found that a simple linear relation does not exist in the results for AES measurements and the bulk analysis by atomic absorption spectroscopy (AAS) because of the back-scattering effect and the overlap of the spectra at lower energies in the Au-Cu system. It is also found that the adsorption of oxygen caused by electron beam bombardment has a significant influence on the AES results. The calibration curves obtained after a correction for oxygen adsorption are successfully applied to the determination of the composition at the surface of a sputtered AuCu alloy.     

Synthesis,surface chemistry and electrocatalytic properties of oxygen-modified tungsten carbide in relation to the electrochemical hydrogen oxidation

The surface chemistry of tungsten carbide was studied using an indicator spectrophotometric method and X-ray photoelectron emission spectroscopy. The presence of WO₂, WO₃ and adsorbed polytungstate ions was identified on the surface of WC specimens. The electrocatalytic activity of oxygen-modified tungsten carbide was attributed to the WO₂ at their interface with WC. This conclusion is supported by the presence of some density of states of the 5d, 6s electrons at the Fermi level on the W⁴⁺ and by the relationship between exchange current density and concentration of the lattice O^2?. Insertion of oxygen atoms in the WC crystal lattice leads to a widening of the anodic range of potentials in which the WC maintains its electrochemical activity in hydrogen oxidation reaction.     

Electronic and optical properties of Au-doped Cu_2O:A first principles investigation

The Cu2O and Au-doped Cu2O films are prepared on MgO(001) substrates by pulsed laser deposition. The X-ray photoelectron spectroscopy proves that the films are of Au-doped Cu2O. The optical absorption edge decreases by 1.6%after Au doping. The electronic and optical properties of pure and Au-doped cuprite Cu2O films are investigated by the first principles. The calculated results indicate that Cu2O is a direct band-gap semiconductor. The scissors operation of 1.64 eV has been carried out. After correcting, the band gaps for pure and Au doped Cu2O are about 2.17 eV and2.02 eV, respectively, decreasing by 6.9%. All of the optical spectra are closely related to the dielectric function. The optical spectrum red shift corresponding to the decreasing of the band gap, and the additional absorption, are observed in the visible region for Au doped Cu2O film. The experimental results are generally in agreement with the calculated results.These results indicate that Au doping could become one of the more important factors influencing the photovoltaic activity of Cu2O film.     

A density functional study of atomic hydrogen and oxygen chemisorption on the relaxed (0001) surface of double hexagonal close packed americium

Ab initio total energy calculations within the framework of density functional theory have been performed for atomic hydrogen and oxygen chemisorption on the (0001) surface of double hexagonal packed americium using a full-potential all-electron linearized augmented plane wave plus local orbitals method. Chemisorption energies were optimized with respect to the distance of the adatom from the relaxed surface for three adsorption sites, namely top, bridge, and hollow hcp sites, the adlayer structure corresponding to coverage of a 0.25 monolayer in all cases. Chemisorption energies were computed at the scalar-relativistic level (no spin-orbit coupling NSOC) and at the fully relativistic level (with spin-orbit coupling SOC). The two-fold bridge adsorption site was found to be the most stable site for O at both the NSOC and SOC theoretical levels with chemisorption energies of 8.204 eV and 8.368 eV respectively, while the three-fold hollow hcp adsorption site was found to be the most stable site for H with chemisorption energies of 3.136 eV at the NSOC level and 3.217 eV at the SOC level. The respective distances of the H and O adatoms from the surface were found to be 1.196 ?and 1.164 ?. Overall our calculations indicate that chemisorption energies in cases with SOC are slightly more stable than the cases with NSOC in the 0.049–0.238 eV range. The work functions and net magnetic moments respectively increased and decreased in all cases compared with the corresponding quantities of bare dhcp Am (0001) surface. The partial charges inside the muffin-tins, difference charge density distributions, and the local density of states have been used to analyze the Am-adatom bond interactions in detail. The implications of chemisorption on Am 5f electron localization-delocalization are also discussed.     

Adsorption and dissociation of ammonia on Au(1 1 1) surface: A density functional theory study

Periodic density functional theory (DFT) calculations using plane waves had been performed to systematically investigate the stable adsorption amine and its dehydrogenated reaction on Au(1 1 1) surface. The equilibrium configuration including on top, bridge, and hollow (fcc and hcp) sites had been determined by relaxation of the system. The adsorption both NH₃ on top site and NH₂ on bridge site is favorable on Au(1 1 1) surface, while the adsorption of NH on hollow (fcc) site is preferred. The adsorbates are adsorbed on the gold surface with the interaction between p orbital of adsorbate and the d orbital of gold atoms. The interaction between adsorbate and gold slab is more evident on the first layer than on any others. Furthermore, the dissociation reaction of NH₃ on clean gold surface, as well as on the pre-covered oxygen atom and pre-covered hydroxyl group surface had been investigated. The results show that the dehydrogenated reaction energy barrier on the pre-covered oxygen gold surface is lower. The adsorbed O can promote the dehydrogenation of amine. Additionally, OH as the product of the NH₃ dissociation reaction participates in continuous dehydrogenation reaction, and the reaction energy barrier is the lowest (22.77 kJ/mol). The results indicated that OH_ads play a key role in the dehydrogenated reaction on Au(1 1 1) surface.     

Electron-stimulated cesium atom desorption from the Cs/CsAu/Au/W system

This paper reports on a continuation of the investigation of electron-stimulated Cs-atom desorption from a tungsten surface on which cesium and gold films had been adsorbed at T = 300 K. Earlier studies revealed that Cs atoms start to desorb only after more than one monolayer of gold and more than one monolayer of cesium had been deposited on the tungsten surface. In this case, a coating consisting of a gold adlayer on tungsten, a CsAu compound possessing semiconducting properties, and a cesium monolayer capping CsAu (Cs/CsAu/Au/W) is formed on the tungsten surface at 300 K. The yield of atoms from this system exhibits a resonant dependence on the incident electron energy E _e , with an appearance threshold of 57 eV and a maximum at 64 eV. In this case, Cs atoms desorb in two channels, with one of them involving Cs desorption out of the cesium monolayer, and the other, from the CsAu monolayer. The Cs yield at E _e = 64 eV has been investigated in both desorption channels, with an additional cesium coating deposited on the already formed Cs/CsAu/Au/W layered system, as well as of the effect annealing produces on the yield and energy distributions of Cs atoms. It has been demonstrated that Cs atoms evaporated at 300 K on a layered coating with a cesium monolayer atop the CsAu layer on tungsten capped with a gold adlayer, rather than reflected from the cesium monolayer or adsorbing on it, penetrate through the cesium monolayer into the bulk of CsAu even with one CsAu layer present. The desorption yield does not vary with increasing cesium concentration at 300 K, but falls off gradually at 160 K. Annealing within the temperature range 320 K ≤ T _H ≤ 400 K destroys the cesium monolayer and the one-layer CsAu coating, but the multilayer CsAu compound does not break up in this temperature range even after evaporation of the cesium monolayer. It is shown that Cs atoms escape from the multilayer CsAu compound primarily out of the top CsAu layer.     

Surface properties of clean and Au or Pd covered hematite (α-Fe(2)O(3)) (0001)

The structure and electronic properties of different terminations of the α-Fe(2)O(3)(0001) surface were studied with spin-polarized density functional theory (DFT) and the DFT + U method accounting for the effect of strong on-site Coulomb correlations. The results for lattice relaxation, electronic and magnetic properties are presented and discussed. Though the DFT and DFT + U methods provide qualitatively very similar surface geometries they differ very much in the prediction of the electronic and magnetic properties, and the surface energetics of the clean α-Fe(2)O(3)(0001). The most stable single iron terminated (0001) surface and the oxygen-rich termination were chosen to study Au and Pd atom adsorption. The results show that both Au and Pd bind strongly to hematite surfaces and induce large changes in their geometry. The DFT + U bonding is weaker by 0.3-0.6 eV than DFT on the iron terminated surface and about 2 eV stronger on the oxygen terminated one. The binding is stronger for Pd than Au and for both adsorbates is distinctly stronger at the oxygen than at the iron terminated surface. On the iron terminated surface the adsorption binding energy per adatom increases both with Au and Pd coverage, whereas for the oxygen terminated one the opposite trend is observed.     

硫原子在镍基合金825(001)面吸附的第一性原理研究

元素硫在镍基合金表面吸附产生严重的电化学腐蚀,为从原子尺度研究硫腐蚀机理,采用第一性原理方法,构建并优化了镍基合金825的晶胞结构模型,计算分析了S原子在镍基合金825耐蚀性较差面(001)晶面的吸附及电子转移情况.结果表明:Ni原子占据顶角, Cr原子和Fe原子对称占据面心是镍基合金825稳定的晶胞结构;原子S在镍基合金825(001)面上最稳定的吸附位为四重穴位,吸附能为-6.51 eV; S吸附前后的态密度(DOS)和二维电荷差分密度图(DCD)对比发现,镍基合金825中Fe与S之间电荷偏移明显,形成离子键,易生成腐蚀产物Fe_xS_y. S的吸附对镍基合金825中Cr原子的电子分布影响不大,且合金中Cr和Ni抑制了合金中Fe与S之间的相互作用,从而提高了合金耐蚀性.