Sn interaction with the CeO2(1 1 1) system: Bimetallic bonding and ceria reduction

A tin layer 0.8 nm thick was deposited onto the CeO₂(1 1 1) surface by molecular beam deposition at a temperature of 520 K. The interaction of tin with cerium oxide (ceria) was investigated by X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS) and resonant photoelectron spectroscopy (RPES). The strong tin-ceria interaction led to the formation of a homogeneous bulk Ce-Sn-O mixed oxide system. The bulk compound formation is accompanied by partial Ce⁴⁺ → Ce³⁺ reduction, observed as a giant 4f resonance enhancement of the Ce³⁺ species. CeO₂ and SnO₂ oxides were formed after oxygen treatment at 520 K. The study proved the existence of strong Ce-Sn interaction and charge transfer from Sn to the Ce-O complex that lead to a weakening of the cerium-oxygen bond, and consequently, to the formation of oxygen deficient active sites on the ceria surface. This behavior can be a key for understanding the higher catalytic activity of the SnO_x/CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

Oxidation of Pt(1 0 0)-hex-R0.7° by gas-phase oxygen atoms

We utilized temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), and low energy electron diffraction (LEED) to investigate the oxidation of Pt(1 0 0)-hex-R0.7° at 450 K. Using an oxygen atom beam, we generated atomic oxygen coverages as high as 3.6 ML (monolayers) on Pt(1 0 0) in ultrahigh vacuum (UHV), almost 6 times the maximum coverage obtainable by dissociatively adsorbing O₂. The results show that oxidation occurs through the development of several chemisorbed phases prior to oxide growth above about 1 ML. A weakly bound oxygen state that populates as the coverage increases from approximately 0.50 ML to 1 ML appears to serve as a necessary precursor to Pt oxide growth. We find that increasing the coverage above about 1 ML causes Pt oxide particle growth and significant surface disordering. Decomposition of the Pt oxide particles produces explosive O₂ desorption characterized by a shift of the primary TPD feature to higher temperatures and a dramatic increase in the maximum desorption rate with increasing coverage. Based on thermodynamic considerations, we show that the thermal stability of the surface Pt oxide on Pt single crystal surfaces significantly exceeds that of bulk PtO₂. Furthermore, we attribute the high stability and the acceleratory decomposition rates of the surface oxide to large kinetic barriers that must be overcome during oxide formation and decomposition. Lastly, we present evidence that structurally similar oxides develop on both Pt(1 1 1) and Pt(1 0 0), therefore concluding that the properties of the surface Pt oxide are largely insensitive to the initial structure of the Pt single crystal surface.     

Structure and magnetic properties of nanocrystalline cobalt ferrite powders synthesized using organic acid precursor method

Nanocrystalline octahedra of cobalt ferrite CoFe₂O₄ powders were synthesized using the organic acid precursor route. The effect of the calcination temperature, Fe³⁺/Co²⁺ molar ratio, calcination time and type of organic acid (oxalic, benzoic and tartaric acids) on the formation, crystallite size, microstructure and magnetic properties was studied systematically. The Fe³⁺/Co²⁺ molar ratio was varied from 2 to 1.739 while the annealing temperature was controlled from 400 to 1000 °C for various periods from 0.5 to 2 h. The resulting powders were investigated using X-ray diffraction (XRD) analysis, Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). XRD results indicate that a well crystallized, single spinel cobalt ferrite phase was formed for the precursors annealed at 600-800 °C for 2 h, using oxalic and tartaric acids as precursors for Fe³⁺/Co²⁺ molar ratio 1.818. The crystallite size of as-formed powders was in the range of 38.0-92.6 nm at different operating conditions. The calcination temperature and Fe³⁺/Co²⁺ molar ratio have a significant effect on the microstructure of the produced cobalt ferrite. The microstructure of the produced powders was found to be octahedra-shaped. The crystalline, pure cobalt ferrite powders with magnetic properties having a maximum saturation magnetization (76.1 emu/g) was achieved for the single phase at Fe³⁺/Co²⁺ molar ratio 1.818 and annealing temperature of 600 °C for 2 h using tartaric acid precursor.     

Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(1 1 1)

In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(1 1 1) substrate.The electrolyte used is ZnCl₂, an aqueous solution of 4 × 10⁻² mol/l concentration. Several deposits were made for various current densities, ranging from 13 mA/cm² to 44 mA/cm², flowing through the solution at room temperature. A parametric study enabled us to assess the effect of the current density on nucleation potential and time as well as zinc films structure. The grazing incidence X-ray diffraction (GIXD) revealed that both Zn and ZnO films are polycrystalline and nanometric. After 1-h oxidation of zinc films at 450 °C in the open air, the structural analyses showed that the obtained ZnO films remained polycrystalline with an average crystal size of about 47 nm and with (1 0 0), (0 0 2) and (1 0 1) as preferential crystallographic orientations.     

In-situ study of the catalytic oxidation of CO on a Pt(1 1 0) surface using ambient pressure X-ray photoelectron spectroscopy

CO and O₂ co-adsorption and the catalytic oxidation of CO on a Pt(1 1 0) surface under various pressures of CO and O₂ (up to 250 mTorr) are studied using ambient pressure X-ray photoelectron spectroscopy (APXPS) and mass spectrometry. There is no surface oxide formation on Pt under our reaction conditions. CO oxidation in this pressure (<500 mTorr), O₂ to CO ratio (<10), and temperature (150 °C) regime is consistent with the Langmuir-Hinshelwood reaction mechanism. Our findings provide in-situ surface chemical composition data of the catalytic oxidation of CO on Pt(1 1 0) at total pressures below 1 Torr.     

Growth and structure of vanadium oxide on anatase (1 0 1) terraces

The interaction of vanadium oxide with epitaxial anatase films exposing (1 0 1) terraces was characterized. The TiO₂ films were grown on vicinal LaAlO₃ (1 1 0) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE); reflection high energy and low energy electron diffraction (RHEED and LEED) indicated that the films exposed (1 0 1) terraces of the anatase TiO₂ polymorph. When a vanadium oxide monolayer was deposited onto the anatase surface by OPA-MBE at 725 K, only (1 × 1) RHEED and LEED patterns were observed. The V X-ray photoelectron spectroscopy (XPS) peak intensities indicated that the monolayer wetted the anatase surface and so the diffraction patterns were attributed to an epitaxial vanadia layer. Analysis of the vanadium oxide monolayer by X-ray and ultraviolet photoelectron spectroscopies revealed that the V was predominantly 5+. When the vanadia coverage was increased at 725 K, Auger electron spectra showed only very slow attenuation of the anatase Ti peaks while spots began to develop in RHEED patterns recorded along the LaAlO₃ direction; both indicative of 3-D cluster formation. In the orthogonal direction, the RHEED patterns showed unusual diagonal streaks. Meanwhile, the (1 × 1) LEED pattern persisted even after 30 nm of vanadia was deposited. This was attributed to gaps between the 3-D clusters exposing the epitaxial monolayer. Core level XPS spectra of the 3-D clusters revealed a broad V 2p_3/2 peak that was centered at the position expected for V⁴⁺ but could be deconvoluted into three peaks corresponding to V³⁺, V⁴⁺, and V⁵⁺. It is shown that crystallographic shear that accommodates such variations in the oxygen content of V oxides can lead to the diagonal streaks in RHEED patterns recorded along the LaAlO₃ [0 0 1] direction even as the pattern in the orthogonal direction shows sharp transmission spots. The results show that vanadia growth on anatase (1 0 1) proceeds through the Stranski-Krastanov mode with a strong vanadia-titania interaction stabilizing a dispersed vanadia monolayer. The results are compared with previous data for vanadia growth on anatase (0 0 1) where smooth, epitaxial VO₂ films grow ad infinitum.     

Effect of precursors on the growth of carbon filaments onto clay surface

The successful growth of carbon filaments on two different precursors, i.e., the pristine sodium-montmorillonite (Na⁺MMT), which undergoes reflux at 100 °C (r-MMT), and the Na⁺MMT exchanged with Fe³⁺ ions (MMT(Fe)), was attained through chemical vapor deposition (CVD). The products obtained were characterized by X-ray diffraction, thermogravimetry, scanning electron microscopy, and transmission electron microscopy. Refluxing can make the Fe³⁺ ions in the octahedral layer of Na⁺MMT migrate to the interlayer and exchange with Na⁺ ions. Furthermore, through calcination at 500 °C, the Fe³⁺ ions migrate again to the surface of the clay layer and form iron oxides, which can serve as precursors for the deposition of carbon. Although r-MMT contained less iron than the MMT(Fe), the ultimate yield of carbon components grown was almost the same, indicating that the iron species in r-MMT possess higher catalytic activity. However, on the surface of r-MMT, CVD hardly generated carbon nanotubes with a clear hollow structure but that those with a carbon fiber structure instead.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.     

Cu-Zn-Al mixed metal oxides derived from hydroxycarbonate precursors for H2S removal at low temperature

One series of Cu-Zn and two series of Cu-Zn-Al hydroxycarbonate precursors with varying metal molar ratios were prepared via co-precipitation or multi-precipitation method, and the mixed metal oxides obtained by calcination of the precursor materials were used as adsorbents for H₂S removal in the range of 25-100 °C. The results of H₂S adsorption tests showed that these mixed oxides, especially two series of Cu-Zn-Al mixed metal oxides exhibited markedly high breakthrough sulfur capacities (ranging from 4.4 to 25.7 g S/100 g-sorbent with increase of Cu/Zn molar ratio) at 40 °C. Incorporation Cu and/or Al decreased the mean crystalline sizes of ZnO and CuO species in the Cu-Zn and Cu-Zn-Al mixed metal oxide adsorbents by decreasing of mean crystalline sizes of hydroxycarbanate phases mainly including hydrozincite, aurichalcite and malachite, segregation of Al phase, etc. Higher breakthrough sulfur capacity of each adsorbent in two ternary series than that of the corresponding adsorbent in binary series should be ascribed to the enhancement of the dispersion of ZnO and/or CuO species with incorporation of aluminum, thereby increasing the overall rate of reaction between the adsorbent and H₂S by reducing the thickness of potential sulfide shell on the outer layer of the oxide crystalline grains and increasing the area of the interface for the exchange of HS⁻/S²⁻ and O²⁻. For each series of adsorbents, the breakthrough sulfur capacity increased with the increase of Cu/Zn molar ratio regardless of changes of the dispersion of CuO and/or ZnO. This phenomenon might be mainly attributed to faster rate of the lattice diffusion of HS⁻, S²⁻ and O²⁻ or exchange of HS⁻/S²⁻ and O²⁻ during the sulfidation of CuO than that during the sulfidation of ZnO due to less rearrangement of the anion lattice.     

The plasma oxidation of Pd(1 0 0)

The oxidation of Pd(1 0 0) by an oxygen plasma was characterized using X-ray photoelectron spectroscopy (XPS), low energy ion scattering spectroscopy (ISS), temperature programmed desorption (TPD), and low energy electron diffraction (LEED). The oxygen uptake followed a typical parabolic profile with oxygen coverages reaching 32 ML after 1 h in the plasma; a factor of 40 higher than could be achieved by dosing molecular oxidants in ultra high vacuum. Even after adsorbing 32 ML of oxygen, XPS revealed both metallic Pd and PdO in the surface region. The R27^o LEED pattern previously attributed to a surface oxide monolayer, slowly attenuated with oxygen coverage indicating that the PdO formed poorly ordered three dimensional clusters that slowly covered the ordered surface oxide. While XPS revealed the formation of bulk PdO, only small changes in the ISS spectra were observed once the surface oxide layer was completed. The leading edges of the O₂ TPD curves showed only small shifts with increasing oxygen coverage that could be explained in terms of the lower thermodynamic stability of small oxide clusters. The desorption curves, however, could not be adequately described as simple zero order decomposition of PdO. There has been an ongoing debate in the literature about the relative catalytic activities of PdO and oxygen phases on Pd, the results indicate that any differences in the reactivity between bulk PdO and surface oxides are not associated with differences in the density of exposed Pd atoms or the decomposition kinetics of these two phases.     

Novel synthesis and electrophoretic response of low density TiO-TiO2-carbon black composite

Novel low density TiO-TiO₂-carbon black composite was synthesized, which involved the deposition of inorganic coating on the surface of core-shell latex particles and subsequent removal of latex particles by calcination in high-purity nitrogen. The morphology and interior structure were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The images exhibited the composite had spherical shape and smooth surface, and the interior structure was hollow or porous. X-ray diffraction peaks (XRD) were mostly in agreement with the standard diffraction patterns of rutile TiO₂. In addition, the observed peaks at 2θ of 43.5°, 50.6° and 74.4° can be indexed to (1 1 1), (2 0 0) and (2 2 0) planes of cubic phase TiO. The X-ray photoelectron spectroscopy (XPS) results indicated that composite consisted of carbon black, TiO and TiO₂. The apparent density of the composite was suitable to 1.62 g cm⁻³, due to density matching with suspending media. Glutin-arabic gum microcapsules containing TiO-TiO₂-carbon black composite electrophoretic liquid were prepared via complex coacervation. The particles in the microcapsules showed excellent electrophoretic mobility under a DC field.     

Hydrothermal preparation and photoluminescent properties of MgAl2O4: Eu spinel nanocrystals

Nanoplates of the MgAl₂O₄ spinel doped with Eu³⁺ ions were prepared by a microwave assisted hydrothermal method. Structural properties of the precursor calcined at 700 and 1000 ^oC powders were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). According to the obtained XRD patterns the formation of single-phase spinels after calcination was confirmed. The average spinel particle size was determined to be 11 nm after calcination at 700 °C and it increased up to 14 nm after calcination at 1000 °C. The photoluminescent properties of prepared powders with different Eu³⁺ ion concentrations (0-5% mol) were investigated using excitation and emission spectroscopy at room and low temperatures (77 K).     

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface

An initial oxidation dynamics of 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface has been studied using high resolution X-ray photoelectron spectroscopy and supersonic molecular beams. Clean 4H-SiC(0 0 0 1)-(√3 × √3)R30° surface was exposed to oxygen molecules with translational energy of 0.5 eV at 300 K. In the first step of initial oxidation, oxygen molecules are immediately dissociated and atomic oxygens are inserted into Si-Si back bonds to form stable oxide species. At this stage, drastic increase in growth rate of stable oxide species by heating molecular beam source to 1400 K was found. We concluded that this increase in growth rate of stable oxide is mainly caused by molecular vibrational excitation. It suggests that the dissociation barrier is located in the exit channel on potential energy hypersurface. A metastable molecular oxygen species was found to be adsorbed on a Si-adatom that has two oxygen atoms inserted into the back bonds. The adsorption of the metastable species is neither enhanced nor suppressed by molecular vibrational excitation.     

The iron oxidation state in Mg-Al-Fe mixed oxides derived from layered double hydroxides: An XPS study

Mixed oxides with large surface area and high thermal stability can be obtained by thermal treatment of the layered double hydroxides (LDH). Mg-Al-Fe mixed oxide samples with varying Mg/Al ratio and 5 mol.% of Fe were prepared in this way and the iron oxidation state (Fe_ox) in these compounds was studied by X-ray photoelectron spectroscopy (XPS), using a calibration based on the relation of Fe_ox to the splitting between the O 1s and Fe 2p_3/2 centroids. The XPS results confirm Fe³⁺ as a dominant oxidation state in the studied mixed oxides. A vacuum-induced reduction of iron in the Fe₂O₃ and Mg-Al-Fe oxide samples has been observed and an influence of the Mg:Al ratio on this effect in mixed oxides has been detected. The role of the local variations of the electron density distribution in the close neighbourhood of the surface oxygen atoms in the mixed oxides in the reduction processes is discussed.     

The effect of heat treatment on the performance of the Ni/(Zr-Sm oxide) catalysts for carbon dioxide methanation

The active catalysts for methane formation from the gas mixture of CO₂ + 4H₂ with almost 100% methane selectivity were prepared by reduction of the oxide mixture of NiO and ZrO₂ prepared by calcination of aqueous ZrO₂ sol with Sm(NO₃)₃ and Ni(NO₃)₂. The 50 at%Ni-50 at%(Zr-Sm oxide) catalyst consisting of 50 at%Ni-50 at%(Zr + Sm) with Zr/Sm = 5 calcined at 650 or 800 °C showed the highest activity for methanation. The active catalysts were Ni supported on tetragonal ZrO₂, and the activity for methanation increased by an increase in inclusion of Sm³⁺ ions substituting Zr⁴⁺ ions in the tetragonal ZrO₂ lattice as a result of an increase in calcination temperature. However, the increase in calcination temperature decreased BET surface area, metal dispersion and hydrogen uptake due to grain growth. Thus, the optimum calcination temperature existed.     

Observation of stable mixed alkanethiolate-chloride adlayer on Ag(1 1 1): structural correlation with pure alkanethiolate monolayers

The self-assembly of 1-alkanethiols, CH₃(CH₂)_n−1SH (n=2-16), on Ag(1 1 1) film initially covered with a native oxide monolayer and that on a chloride-covered Ag(1 1 1) were comparatively studied by X-ray photoelectron spectroscopy and scanning tunneling microscopy. The native oxide monolayer was readily substituted completely by thiolates irrespective of chain length, leading to a dense (√7×√7)R19.1° monolayer for n<3, or a distorted (√7×√7)R19.1° structure for n>3 accompanied by distinct island and fine domain structures previously reported by other groups. In contrast, the chloride-to-thiolate conversion was far from complete for long alkanethiols (n?8), and at sufficiently high conversion temperature (>50 °C), we found a highly stable mixed thiolate-chloride monolayer with a well-defined 2:1 S/Cl atomic ratio, suggesting the occurrence of a mixed (√7×√7)R19.1° adlayer ordering. The combined effects of substrate-molecule and intermolecular interactions behind these contrastive phenomena are discussed.     

Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O₂; PO+O₂ = 5 × 10⁻⁶ Torr) and pure molecular oxygen (O₂; PO₂ = 10⁻⁵ Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O₂ exposure <8 × 10⁴ L, at which point the average oxide/silicate overlayer thickness is 23 (3) Å (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 × 10⁵ L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) Å, compared to a oxide average thickness of 17(2) Å (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt.     

Ultrathin ZrO2 films on Si-rich SiC(0 0 0 1)-(3 × 3): Growth and thermal stability

The growth and thermal stability of ultrathin ZrO₂ films on the Si-rich SiC(0 0 0 1)-(3 × 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 °C yields tetragonal ZrO₂. An interface is formed between the ZrO₂ film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O₂. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO₂ and ZrO₂ occurs, possibly under the formation of silicate. The alignment of the ZrO₂ and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 °C does not lead to decomposition of the tetragonal ZrO₂ (t-ZrO₂) but changes are observed within the interface region. After annealing to 1000 °C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO₂ remnants, metallic Zr silicide and Si aggregates.     

Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N₂O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 °C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 °C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N₂O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N₂O precursors.     

Stability of MgO(1 1 1) films grown on 6H-SiC(0 0 0 1) by molecular beam epitaxy for two-step integration of functional oxides

Crystalline magnesium oxide (MgO) (1 1 1), 20 Å thick, was grown by molecular beam epitaxy (MBE) on hydrogen cleaned hexagonal silicon carbide (6H-SiC). The films were further heated to 740 °C and 650 °C under different oxygen environments in order to simulate processing conditions for subsequent functional oxide growth. The purpose of this study was to determine the effectiveness and stability of crystalline MgO films and the MgO/6H-SiC interface for subsequent heteroepitaxial deposition of multi-component, functional oxides by MBE or pulsed laser deposition processes. The stability of the MgO films and the MgO/6H-SiC interface was found to be dependent on substrate temperature and the presence of atomic oxygen. The MgO films and the MgO/6H-SiC interface are stable at temperatures up to 740 °C at 1.0 × 10⁻⁹ Torr for extended periods of time. While at temperatures below 400 °C exposure to the presence of active oxygen for extended periods of time has negligible impact, exposure to the presence of active oxygen for more than 5 min at 650 °C will degrade the MgO/6H-SiC interface. Concurrent etching and interface breakdown mechanisms are hypothesized to explain the observed effects. Further, barium titanate was deposited by MBE on bare 6H-SiC(0 0 0 1) and MgO(1 1 1)/6H-SiC(0 0 0 1) in order to evaluate the effectiveness of the MgO as a heteroepitaxial template layer for perovskite ferroelectrics.