通过边缘修饰在非磁性石墨烯基单分子结中引入自旋的理论研究

在分子自旋电子学中,向非磁性的分子器件中注入自旋引起了广泛关注.在此提出一个新颖的策略,将磁性引入到与两个扶手椅形石墨烯纳米带电极耦合的单个苯分子器件中,即将这两个扶手椅形石墨烯纳米带电极的末端切割成锯齿形边缘的三角形石墨烯.利用第一性原理方法研究了分子结的自旋相关输运性质.结果表明,由于锯齿形边缘的三角形石墨烯向扶手椅形石墨烯纳米带电极和苯分子的自旋转移,导致锯齿形边缘三角形石墨烯的本征磁性减弱.有趣的是,虽然锯齿形边缘三角形石墨烯的本征磁性衰减了,但仍对分子结的自旋输运有显著的贡献.输运计算表明,在自旋平行构型下,可以获得较大的电流自旋极化率.然而,在自旋反平行构型下,电流的自旋极化率发生了反转.器件隧穿磁电阻的正负可以通过偏压来调控.这项工作提出了一个在新型分子自旋电子器件中设计和应用石墨烯纳米带的有趣方法.     

界面铁掺杂锯齿形石墨烯纳米带的自旋输运性能

基于密度泛函理论第一原理系统研究了界面铁掺杂锯齿(zigzag)形石墨烯纳米带的自旋输运性能, 首先考虑了宽度为4的锯齿(zigzag)形石墨烯纳米带, 构件了4个纳米器件模型, 对应于中心散射区的长度分别为N=4, 6, 8和10个石墨烯单胞的长度, 铁掺杂在中心区和电极的界面. 发现在铁磁(FM)态, 四个器件的β自旋的电流远大于α自旋的电流, 产生了自旋过滤现象; 而界面铁掺杂的反铁磁态模型, 两种电流自旋都很小, 无法产生自旋过滤现象; 进一步考虑电极的反自旋构型, 器件电流显示出明显的自旋过滤效应. 探讨了带宽分别为5和6的纳米器件的自旋输运性能, 中心散射区的长度为N=6个石墨烯单胞的长度, FM 态下器件两种自旋方向的电流值也存在较大的差异, β自旋的电流远大于α自旋电流. 这些结果表明: 界面铁掺杂能有效调控锯齿形石墨烯纳米带的自旋电子, 对于设计和发展高极化自旋过滤器件有重要意义.     

含孔缺陷石墨烯纳米条带的电学特性研究

本文系统地研究了不同形状(三方、四方及六方) 的孔缺陷对锯齿形石墨烯纳米条带电学特性的影响. 结果表明: 孔缺陷形状对于石墨烯纳米条带的电导及电流特性影响显著, 其可能源于不同形状的孔缺陷边界对于电子散射的不同; 另外, 当缺陷悬挂吸附氢或氮原子, 将引起孔缺陷形状改变, 因此不同孔缺陷吸附对于石墨烯纳米条带的电学特性的影响也各不相同. 本研究将为石墨烯基电子器件失效分析及石墨烯孔结构器件设计提供有价值的理论指导. 关键词： 石墨烯 孔缺陷 电学特性     

FeN_3掺杂扶手椅型石墨烯纳米条带的极强电流极化和微分负导效应（英文）

本文运用第一性原理研究了FeN3掺杂扶手椅型和锯齿型石墨烯纳米条带的电子结构和输运性质.结果表明,FeN3掺杂可导致两种类型的条带的能带结构发生显著变化,导致体系具有稳定的室温铁磁基态.但是,只有扶手椅型条带具有明显的负微分电导和极强的电流极化效应(接近100%).这是由于FeN3掺杂引入孤立的两条自旋向下能级,导致极强的电流极化.同时,它们与自旋向下的不同子能带的耦合强度完全不同,导致体系呈现出负微分电导行为.结果说明,通过FeN_3掺杂扶手椅型石墨烯纳米条带也可用于制备自旋电子学器件.     

门电压控制的硅烯量子线中电子输运性质

硅烯是由单层硅原子形成的二维蜂窝状晶格结构,具有石墨烯类似的电学性质,由于硅烯中存在比较强的自旋轨道耦合而备受关注.本文利用非平衡格林函数方法研究了门电压控制的硅烯量子线中电子输运性质和能带结构.研究发现,只有在较强的门电压下,而且硅烯量子线具有较好的锯齿形或扶手椅形边界而不存在额外硅原子时,硅烯量子线中才存在无能隙的自旋极化边缘态.另外,计算结果表明这种门电压控制的硅烯量子线中边缘态在每个能谷处自旋是极化的.这些计算结果将为实验上利用电场制作硅烯纳米结构提供理论支持.     

含氮-空位缺陷锯齿状石墨烯纳米条带中负微分电阻和自旋过滤效应

采用第一性原理和非平衡格林函数方法,系统研究了含氮空位缺陷锯齿状石墨烯纳米条带的自旋极化输运特性．理论计算结果表明边界非对称的这类石墨纳米条带的基态具有铁磁性,由其构建的分子结中负微分电阻效应具有鲁棒性,是电极局域的态密度及依赖偏压的散射区-电极耦合作用结果．此外,在特定偏压区域还观察到几乎完美的自旋过滤效应．     

氢化与非氢化石墨烯纳米条带的密度泛函研究

基于密度泛函理论的第一性原理计算方法,研究了宽度N=8的边缘氢化和非氢化条带的结构和电子性质. 研究表明,扶手形无氢化石墨纳米条带的边缘碳原子是以三重键相互结合,它在边缘的成键强度比氢化时要高,具有更强的化学活性,可作为纳米化学传感器的基础材料. 能带结构计算表明,无论是扶手形条带还是锯齿形条带,它们都是具有带隙的半导体,且无氢化条带的带隙要比氢化的条带带隙宽度大,氢化对于条带的电子性质具有显著修饰作用. 通过锯齿形石墨纳米条带顺磁性、铁磁性和反铁磁性的计算,发现反铁磁的状态最稳定,并且边缘磁性最强,这有利于条带在自旋电子器件中的应用. 关键词： 石墨纳米条带 成键机理 电子结构 自旋分布     

FeN3掺杂扶手椅型石墨烯纳米条带的极强电流极化和微分负导效应

本文运用第一性原理研究了FeN₃掺杂扶手椅型和锯齿型石墨烯纳米条带的电子结构和输运性质. 结果表明,FeN₃掺杂可导致两种类型的条带的能带结构发生显著变化,导致体系具有稳定的室温铁磁基态. 但是,只有扶手椅型条带具有明显的负微分电导和极强的电流极化效应(接近100%). 这是由于FeN₃掺杂引入孤立的两条自旋向下能级,导致极强的电流极化. 同时,它们与自旋向下的不同子能带的耦合强度完全不同,导致体系呈现出负微分电导行为. 结果说明,通过FeN₃掺杂扶手椅型石墨烯纳米条带也可用于制备自旋电子学器件.     

扰动对有机磁体器件自旋极化输运特性的影响

基于紧束缚模型和格林函数方法,研究了有机磁体晶格扰动和侧基自旋取向扰动对金属/有机磁体/金属三明治结构有机自旋器件自旋极化输运特性的影响.计算结果表明:晶格扰动的存在降低了器件的起始偏压,减小了导通电流,并使得电流-电压曲线的量子台阶效应不再显著,扰动不太强时电流仍呈现较高的自旋极化率;而侧基自旋取向扰动减小了体系的自旋劈裂,增加了器件的起始偏压,低偏压下随着扰动的增强器件电流及其自旋极化率明显降低.进一步模拟了温度对器件自旋极化输运的影响. 关键词： 有机自旋电子学 有机磁体 自旋极化输运 自旋过滤     

锯齿形石墨烯反点网络加工与输运性质研究

具有特定边界的石墨烯纳米结构在纳电子学、自旋电子学等研究领域表现出良好的应用前景.然而石墨烯加工成纳米结构时,无序的边界不可避免地会降低其载流子迁移率.氢等离子体各向异性刻蚀技术是加工具备完美边界石墨烯微纳结构的一项关键技术,刻蚀后的石墨烯呈现出规则的近原子级平整的锯齿形边界.本文研究了氮化硼上锯齿形边界石墨烯反点网络的磁输运性质,低磁场下可以观测到载流子围绕着一个空位缺陷运动时的公度振荡磁阻峰.随着磁场的增大,朗道能级简并度逐渐增大,载流子的磁输运行为从Shubnikov-de Haas振荡逐渐向量子霍尔效应转变.在零磁场附近可以观测到反点网络周期性空位缺陷的边界散射所导致的弱局域效应.研究结果表明,在氮化硼衬底上利用氢等离子体刻蚀技术加工锯齿形边界石墨烯反点网络,其样品质量会明显提高,这种简单易行的方法为后续高质量石墨烯反点网络的输运研究提供了新思路.     

Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

Reprint of : Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

氢修饰石墨烯纳米带压电性质的第一性原理研究

采用第一性原理计算方法, 系统研究了不同宽度、不同边缘修饰模式的间隔氢吸附锯齿型石墨烯纳米带的压电性质. 结构优化和结合能计算表明, 氢修饰石墨烯纳米带结构稳定. 氢原子间隔排列的吸附使得纳米带中的相邻碳原子成键及电荷状态不同, 导致拉伸时纳米带中六元碳环的正负电荷中心不再重合, 产生宏观电极化. 纳米带宽度越宽, 包含六元碳环数目越多, 则拉伸时纳米带长度方向上电偶极矩密度越大, 其压电性能越强. 另外, 边缘原子电荷状态决定了无拉伸时纳米带的初始电偶极矩密度, 其大小可以通过改变边缘氢原子的修饰模式来有效调控. 关键词： 石墨烯纳米带 第一性原理 修饰改性 压电性质     

Width dependent structural and electrical properties of zigzag ZnTe nanoribbons

We carry out density functional theory based investigation to understand the structural and electrical properties such as atomic structure, edge energy, band gap, and work function of zigzag ZnTe nanoribbons. It is found that the zigzag nanoribbons may be stabilized by passivating the edge atoms with Hydrogen, Oxygen or Fluorine atoms. Our study reflects that zigzag ZnTe nanoribbons with smaller width behave like semiconductor. However, they exhibit a transition from semiconducting phase to a metallic phase as width increases. A wide variation of band gap is obtained with respect to the choice of edge passivating elements. Work functions of all the nanoribbons are also estimated in order to assess the utility of these nanoribbons in various field emission devices.     

Comparison of Raman spectra and vibrational density of states between graphene nanoribbons with different edges

Vibrational properties of graphene nanoribbons are examined with density functional based tight-binding method and non-resonant bond polarization theory. We show that the recently discovered reconstructed zigzag edge can be identified from the emergence of high-energy vibrational mode due to strong triple bonds at the edges. This mode is visible also in the Raman spectrum. Total vibrational density of states of the reconstructed zigzag edge is observed to resemble the vibrational density of states of armchair, rather than zigzag, graphene nanoribbon. Edge-related vibrational states increase in energy which corroborates increased rigidity of the reconstructed zigzag edge.     

A minimum single-band model for low-energy excitations in superconducting A x Fe2−y Se2

We investigate the coherent electronic transport properties of square-shaped zigzag graphene nanoconstrictions (ZGNC) under transverse strain using recursive Green’s function method. We find that the low-bias conductance of ZGNCs is monotonically dependent on the strain in contrast to that of zigzag graphene nanoribbons (ZGNRs), which is unaffected by strain. This result suggests that ZGNCs can be used as elementary building blocks in graphene nanomechanical system devices. In addition, a simplified analytical model is employed to qualitatively explain the strain tuning of the low-bias conductance of ZGNCs.     

Fano Resonance Effect in CO-Adsorbed Zigzag Graphene Nanoribbons

Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non-equilibrium Green's Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.     

Characteristics of Li diffusion on silicene and zigzag nanoribbon

We perform a density functional study on the adsorption and diffusion of Li atoms on silicene sheet and zigzag nanoribbons. Our results show that the diffusion energy barrier of Li adatoms on silicene sheet is 0.25 eV, which is much lower than on graphene and Si bulk. The diffusion barriers along the axis of zigzag silicene nanoribbon range from 0.1 to0.25 eV due to an edge effect, while the diffusion energy barrier is about 0.5 eV for a Li adatom to enter into a silicene nanoribbon. Our calculations indicate that using silicene nanoribbons as anodes is favorable for a Li-ion battery.     

Relative stability of armchair,zigzag and reczag graphene edges on the Ru(0001) surface

The relative stability of armchair, zigzag, and the reconstructed zigzag (reczag) graphene edges was studied using density functional theory with the Perdew, Burke, and Ernzerhof (PBE) exchange correlation functional for graphene nanoribbons in vacuo and on the Ru(0001) surface. Although the reczag edge was found to be more stable in vacuo confirming previous predictions of Koskinen et al. [Phys. Rev. Lett. 101 (2008) 115502], the relative stability reverses upon adsorption on the Ru(0001) surface. The zigzag edge is more stable than the reczag edge on the surface by about 0.15 eV/Å and the armchair ribbon was found to be approximately isoenergetic with the zigzag ribbon. For all three types of edges, strong edge–Ru interactions are observed that cause the edges to buckle down. The lowered edge height may facilitate C attachments at graphene edges during graphene synthesis.     

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

In this work, we performed first principles calculations based on self-consistent charge density functional tight-binding to investigate different mechanisms of band gap tuning of silicene. We optimized structures of silicene sheet, functionalized silicene with H, CH₃ and F groups and nanoribbons with the edge of zigzag and armchair. Then we calculated electronic properties of silicene, functionalized silicene under uniaxial elastic strain, silicene nanoribbons and silicene under external electrical fields. It is found that the bond length and buckling value for relaxed silicene is agreeable with experimental and other theoretical values. Our results show that the band gap opens by functionalization of silicene. Also, we found that the direct band gap at K point for silicene changed to the direct band gap at the gamma point. Also, the functionalized silicene band gap decrease with increasing of the strain. For all sizes of the zigzag silicene nanoribbons, the band gap is near zero, while an oscillating decay occurs for the band gap of the armchair nanoribbons with increasing the nanoribbons width. At finally, it can be seen that the external electric field can open the band gap of silicene. We found that by increasing the electric field magnitude the band gap increases.