双色激光场中激光强度和脉宽对线性多原子分子离子电离的影响

 利用强激光场电离和离解分子来研究分子激发态的波包结构是强场物理的重要研究方向。利用短时指数传播子对称分割法和快速傅里叶变换技术，数值求解了一维含时Schr-dinger方程，探讨了双色激光场中激光的基波和谐波强度之间的不同配比以及脉宽对线性多原子分子离子电离的影响。理论计算结果表明：基波和谐波的相对相位为π时，尽管随着激光的基波和谐波强度之间配比的变化，电离几率随原子间距变化的趋势基本保持不变，但在一定的激光基波强度下（1.2×10¹³~1.2×10¹⁵ W/cm²)，激光基波强度的变化可以明显改变电离几率随原子间距变化的趋势。另外，激光脉冲的持续作用可以增强分子的电离，取原子个数为5，基频光波长为800 nm，基波与谐波的强度配比为4，频率配比为2，当其作用时间达到75 fs时，电离基本接近饱和。采用外静电场电离模型能够合理地解释这些现象。     

光强、频率对强激光场中的多原子分子离子增强电离行为的影响

通过利用短时指数传播子的对称分割和快速傅里叶变换,数值求解一维含时薛定谔方程,研究了一维多原子分子离子在超强脉冲强激光场中的增强电离(EI)行为,给出了激光强度和频率对增强电离的影响.计算表明随着激光频率的增加,增强电离的临界键长变小,电离概率 也减小;随着激光强度的增加,电离概率增加,当强度增加到一定值时,就不再出现增强电离现象. 关键词： 强激光场 分子离子 增强电离     

高功率微波及材料特性参数对沿面击穿的影响

为研究高功率微波及材料特性参数对介质沿面闪络击穿过程的影响,采用自编的1D3V PIC-MCC程序,通过粒子模拟手段,得到了电子与离子数目、电子及离子密度分布、空间电荷场时空分布、电子平均能量、放电功率、表面沉积功率、激发电离损耗功率、电离频率等重要物理量。结果表明:电离频率随场强增加而增加,达到饱和后缓慢下降,强场诱发的二次电子数目更多导致本底沉积功率增高;电离频率随频率减小而增加,达到饱和后缓慢下降,频率太高会抑制次级电子倍增;因此,低频强场下击穿压力较大;反射引发表面电场下降及磁场增加效应,降低表面场强虽使表面击穿压力下降,但磁场的增加会导致二次电子倍增起振时间缩短,且会增加器件内部击穿风险;圆极化相对线极化诱导二次电子数目更多、本底沉积功率更高,击穿风险增加;短脉冲产生电子、离子总数少,平均能量低,沉积功率低,击穿风险低于长脉冲;脉冲上升时间的缩短和延长,只会提前或推后击穿时间,并不会改善击穿压力;材料二次电子发射率的增加会给击穿造成巨大压力,表面光滑度对击穿过程影响不大;电离频率和电子平均能量随释气压强增加均先增加后减小,低气压二次电子倍增占优,高气压碰撞电离占优。     

超短激光脉冲的绝对相位对三能级Λ型原子布居的影响

通过数值求解含时薛定谔方程,研究超短激光脉冲与三能级Λ型原子相互作用过程中影响原子电离态跃迁几率的几个因素,如:绝对相位,啁啾率等.研究结果表明激光绝对相位、啁啾率的大小是关系态跃迁几率的重要因素,通过调节超短激光脉冲的绝对相位和啁啾率,可以将态跃迁几率控制到较大的水平.本文研究结果为实验上对态跃迁几率的控制提供了相关理论基础.     

脉冲激光诱导金属薄膜电离的分子动力学模拟

采用分子动力学方法模拟研究了激光诱导金属薄膜的电离过程,对激光等离子体形成早期原子的运动轨迹、薄膜表面的温度变化以及原子的电离特性进行了详细分析,并探究了脉冲激光参数对原子电离过程的影响.结果表明,在激光照射过程中,薄膜表面先熔化而后又气化,气化的原子继续吸收激光能量继而电离.激光的峰值功率密度越大,原子电离速率越快,电离数目越多,薄膜表面的温度越高.脉冲宽度越小,原子电离速率越快,薄膜表面的温度越高,但原子的电离数目先增加后减小.     

高频激光脉宽对原子光电子发射谱的影响

采用广义含时伪谱方法数值求解原子在激光脉冲作用下的动量空间含时薛定谔方程,研究了高频激光脉宽对原子光电子发射谱的影响.数值模拟表明,随着激光脉冲宽度的增加,光电子谱干涉结构的振荡幅值逐渐减小,其最大峰值的强度和位置取决于产生有效电离的最大即时强度.通过分析光电子谱的变化规律能进一步加深对高频强场电离产生的动力学干涉效应的理解.     

高频激光脉冲作用下原子的光子和光电子发射

通过数值求解含时薛定谔方程, 研究了原子在高频激光作用下的电离概率、光电子谱和谐波发射谱. 研究发现, 随着入射激光强度的增加, 原子的电离概率逐渐增加, 达到最大后下降, 其光电子发射谱和高次谐波发射谱均由单峰结构变成多峰. 而通过对谐波发射谱的时间-频率分析发现, 在电离抑制区域, 脉冲的峰值附近谐波受到抑制, 谐波发射主要发生在上升沿和下降沿, 二者的干涉效应产生了谐波的多峰值结构. 利用光电子发射谱和谐波发射谱随入射激光强度的改变规律, 可以实现对引起原子电离抑制的激光强度进行诊断.     

(1+2+1)双共振多光子电离概率的理论研究

共振增强多光子电离光谱技术已成为研究原子、分子高激发态能级结构的重要方法。运用光和物质相互作用的速率方程理论,推导出四能级物质系统1+2+1双共振增强多光子电离概率的解析表达式,以此为基础,理论模拟了电离概率随激发光强、激光脉冲宽度和碰撞弛豫速率的变化,发现在1+2+1多光子电离机制中,电离概率随光强的增加而增大,继而出现单步、双步激发饱和的现象,直至饱和值1;继续增大光强,电离概率将围绕饱和值1窄幅振荡,振荡幅度随光强增加而增大。随激光脉冲宽度的增大,电离概率从零开始逐渐增大直至饱和值1。而随碰撞弛豫速率的增大电离概率以线性规律减小。     

超强激光场中氢原子辐射高次谐波蒙特卡罗模拟

运用蒙特卡罗方法，模拟和计算出在超强激光场中，氢原子在相对论领域的电离几率和辐射出的高次谐波，并且讨论了氢原子的电离几率和辐射出的高次谐波与激光场的电场和磁场的关系。     

厚原子蒸气介质中原子选择性光电离的理论研究

激光在厚原子蒸气介质中传播时会产生脉冲形变和延迟现象,这会直接影响原子多步光电离过程中的电离率和选择性.从原子蒸气激光同位素分离的实际出发,对厚原子蒸气介质中的原子光电离过程进行了研究,利用密度矩阵方法描述原子的光电离过程,利用Maxwell方程描述激光在厚介质中的传播,建立了介质中同时存在两种同位素的激光传播电离方程组,考察了原子蒸气参数和激光参数对厚介质中平均电离率和平均选择性的影响.研究结果表明:对于较厚的原子蒸气介质,激光功率的增加使平均电离率升高,平均选择性下降;对于相对较薄的介质,适当地降低激光功率可以同时提高平均电离率和平均选择性.存在一个正的激光延时使原子蒸气中目标同位素的平均电离率达到最大.尽量延长激光脉冲的宽度不仅可以同时提高目标同位素的平均电离率和平均选择性,还可以降低对激光脉冲之间相对延时的控制精度.     

Correlation function of ultrahigh-energy cosmic rays favors point sources

Closed analytical expressions for the probability of multiphoton ionization of atoms and ions by a time-varying electric field ?(t) are obtained by the imaginary time method. These expressions apply for arbitrary values of the Keldysh parameter γ. The dependence of the ionization probability and the photoelectron momentum spectrum on the shape of an ultrashort laser pulse is considered.     

Theoretical investigation of 2+2 resonance enhanced multi-photon ionization probability

The analytic formula of the ionization probability in the process of 2+2 resonance enhanced multi-photon ionization (REMPI) is derived from the dynamic rate equation about the interaction of photon and material. Based on the formula, the influence of laser intensity, laser pulse duration and collision relaxation rate on the ionization probability is investigated theoretically. It is shown that the ionization probability increases with the laser intensity and laser pulse duration. The ionization probability will get to one until two steps saturation with the increase of laser intensity. After that, the ionization probability will oscillates narrowly around the saturation value if the laser intensity increases further. The results also show that the ionization probability will decrease in linear manner nearly with the increase of collision relaxation rate. But the variation is small. So the influence of the collision relaxation rate (or even sample pressure) on the ionization probability can be ignored. In the practical use of REMPI, higher sample pressure will reduce the intensity of the detection signal is due to the collision complex of the positive and negative ions. This will reduce the collection efficiency of the ions, and influence the magnitude of the ion signal further.     

Double ionization of helium interacting with elliptically polarized laser pulse by classical ensemble simulations

This paper uses the classical ensemble method to study the double ionization of a 2-dimensional (2D) model helium atom interacting with an elliptically polarized laser pulse. The classical ensemble calculation demonstrates that the ratio of double to single ionization decreases with the increasing ellipticity of the driving field. The classical scenario shows that there are hardly any e--e recollisions with the circularly polarized laser pulse. The double ionization probability is studied for linearly and circularly polarized laser pulses. The classical numerical results are consistent with the semiclassical rescattering mechanism and in agreement with the experimental results and the quantum calculations qualitatively.     

Multiphoton atomic ionization in the field of a very short laser pulse

Closed analytic expressions are derived for the probability of multiphoton atomic and ionic ionization in a variable electric field ?(t), which are applicable for arbitrary Keldysh parameters γ. Dependencies of the ionization probability and photoelectron pulse spectrum on the shape of a very short laser pulse are analyzed. Examples of pulse fields of various forms, including a modulated light pulse with a Gaussian or Lorentz envelope, are considered in detail. The interference effect in the photoelectron energy spectrum during atomic ionization by a periodic field of a general form is examined. The range of applicability of the adiabatic approximation in the multiphoton ionization theory is discussed. The imaginary time method is used in the calculations, which allows the probability of particle tunneling through oscillating barriers to be effectively calculated.     

Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors

An expression for the probability of thermally activated tunneling ionization in an electric field in the presence of a magnetic field is obtained. It is shown that the logarithm of the ionization probability is proportional to the squared electric field, and the coefficient of proportionality decreases with increasing magnetic field. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 10, 763–767 (25 November 1998)     

Relativistic generalization of the Keldysh ionization theory

A relativistic theory of tunneling is developed. Ionization of atoms and ions by a constant crossed field and an ultrashort laser pulse, ionization probability as a function of the adiabaticity parameter and the pulse shape, the limit of the Keldysh nonrelativistic ionization theory, and the photoelectron momentum spectrum are considered. In calculations, the imaginary time method is used.     

Yields and ionization probabilities of sputtered Inn particles under atomic and polyatomic Aum ion bombardment

The emission of neutral and charged atoms and clusters from a polycrystalline indium surface under bombardment with 5 and 10 keV Au, Au₂, Au₃ and Au₅ projectiles was investigated. Single photon laser postionization was utilized for the detection of sputtered neutral particles. Secondary ions were detected without the laser under otherwise exactly the same experimental conditions. The relative cluster yields were found to be enhanced under polyatomic projectile bombardment, more so the larger the number of atoms in the sputtered cluster. The ionization probability strongly increases with increasing cluster size, but is essentially independent of the projectile impact energy. At a fixed impact energy, the ionization probability of sputtered monomers was found to decrease with increasing number of constituent gold atoms per projectile, but there was no detectable effect for sputtered dimers and larger clusters.     

Multiphoton ionization of iodine atoms and CF<Subscript> 3</Subscript>I molecules by XeCl laser radiation

We report about effective ionization of iodine atoms and CF₃I molecules under the action of intense XeCl laser radiation (308 nm). The only ion fragment resulting from the irradiation of the CF₃I molecules is the I⁺ ion. We have studied the influence of the intensity, spectral composition, and polarization of the laser radiation used on the intensity of the ion signal and the shape of its time-of-flight peak. Based on the analysis of the results obtained, we have suggested the mechanism of this effect. The conclusion drawn is that the ionization of the iodine atoms by the ordinary XeCl laser with a nonselective cavity results from a three- (2 + 1)-photon REMPI process. This process is in turn due to the presence of accidental two-photon resonances between various spectral components of the laser radiation and the corresponding intermediate excited states of the iodine atom. The probability of ionization of the atoms from their ground state I(²P_3/2) by the radiation of the ordinary XeCl laser is more than two orders of magnitude higher than the probability of their ionization from the metastable state I^*(²P_1/2). The ionization of the CF₃I molecules by the XeCl laser radiation occurs as a result of a four-photon process involving the preliminary one-photon dissociation of these molecules and the subsequent (2 + 1)-photon REMPI of the resultant neutral iodine atoms.