Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors |
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| Authors: | V I Perel’ I N Yassievich |
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| Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | An expression for the probability of thermally activated tunneling ionization in an electric field in the presence of a magnetic
field is obtained. It is shown that the logarithm of the ionization probability is proportional to the squared electric field,
and the coefficient of proportionality decreases with increasing magnetic field.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 10, 763–767 (25 November 1998) |
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