Synthesis and crystallographic studies of garnet-type AgCa2Mn2V3O12 and NaPb2Mn2V3O12

High-purity powder specimens of AgCa₂Mn₂V₃O₁₂ and NaPb₂Mn₂V₃O₁₂ have been successfully synthesized by solid-state chemical reaction. The Rietveld refinements from X-ray powder diffraction data verified that these compounds have the garnet-type structure (space group , No. 230) with the lattice constant of a=12.596(2) Å for AgCa₂Mn₂V₃O₁₂ and a=12.876(2) Å for NaPb₂Mn₂V₃O₁₂. Calculation of the bond valence sum supported that Mn is divalent and V is pentavalent in these garnets. Estimation of the quadratic elongation and the bond angle variance showed that the distortions of the MnO₆ octahedra and the VO₄ tetrahedra are significantly suppressed. Our new results of AgCa₂Mn₂V₃O₁₂ and NaPb₂Mn₂V₃O₁₂ are compared to those of AgCa₂M₂V₃O₁₂ and NaPb₂M₂V₃O₁₂ (M=Mg, Co, Ni, Zn).     

Lattice parameters variation with temperature of Ti2O3 and (Ti0.98V0.02)2O3 from single crystal X-ray data

The lattice parameters of Ti₂O₃ and (Ti_0.98V_0.02)₂O₃ have been measured as a function of temperature (24–670°C for Ti₂O₃ and 24–440°C for V-doped Ti₂O₃) from single crystal X-ray data. The high temperatures were attained by blowing hot argon directly on the crystal mounted on an automatic Philips diffractometer. This experimental set-up gives standard deviations which are at least 10 times better than those of the previous measurements and allows to keep Ti₂O₃ as such well above the transition. The variations of a, c, $\text{c}\text{a}$ (hexagonal axes) for pure Ti₂O₃ are in agreement with the previous results. On the contrary we did not observe any transition in the unit cell volume. The V-doping seems to attenuate the transition which is visible only on the a vs T curve     

Crystallization kinetics of Li2O-PbO-V2O5 glasses

Lead vanadate glasses of the system 5Li₂O−(45−x) PbO−(50+x) V₂O₅, with x=0, 5, 10, and 15 mol% have been prepared and studied by differential scanning calorimetry (DSC). The crystallization kinetics of the glasses were investigated under non-isothermal conditions applying the formal theory of transformations for heterogeneous nucleation to the experimental data obtained by DSC using continuous-heating techniques. In addition, from dependence of the glass-transition temperature (T_g) on the heating rate, the activation energy for the glass transition was derived. Similarly the activation energy of the crystallization process was determined and the crystallization mechanism was characterized. The results reveal the increase of the activation energy for glass transition which was attributed to the increase in the rigidity, the cross-link density and the packing density of these glasses. The phases into which the glass crystallizes have been identified by X-ray diffraction. Diffractograms of the transformed material indicate the presence of microcrystallites of Li_0.30V₂O₅, Li_0.67O₅V₂, LiV₆O₁₅, Li₄O₄Pb, and O₇Pb₂V₂ in a remaining amorphous matrix.     

Microstructural, dielectric and spectroscopic properties of Li2O-Nb2O5-ZrO2-SiO2 glass system crystallized with V2O5

Li₂O-Nb₂O₅-ZrO₂-SiO₂ glasses mixed with different concentrations of V₂O₅ were crystallized. The samples were characterized by XRD, SEM and DTA techniques. The SEM pictures indicated that the samples contain well defined and randomly distributed crystal grains. The X-ray diffraction studies have revealed the presence of several crystalline phases in these samples. Optical absorption, ESR and photoluminescence spectral studies on these samples have indicated that a considerable proportion of vanadium ions do exist in V⁴⁺ state in addition to V⁵⁺ state and the redox ratio seems to be increasing with increase in the concentration of crystallizing agent V₂O₅. The infrared spectral studies have pointed out the existence of conventional SiO₄, ZrO₄, NbO₆, VO structural units in the glass ceramic network. The study of dielectric properties suggested a decrease in the insulating character of the glass ceramics with increase in the crystallizing agent. A.C. conductivity in the high temperature region seems to be connected mainly with the polarons involved in the process of transfer from V⁴⁺↔V⁵⁺ ions.     

Magnetic resonance study of phases in FeVO4-Co3V2O8 system

Multicomponent vanadates Co_3+xFe_4−xV₆O₂₄ have been synthesized using the solid state reaction method from Co₃V₂O₈ and FeVO₄.oxides. The electron paramagnetic resonance/ferromagnetic resonance (EPR/FMR) spectra of 20 samples containing solid state phases formed in the FeVO₄-Co₃V₂O₈ system have been recorded at room temperature. The howardevansite structure (H-type phase) is produced, which corresponds to the Co_2.616Fe_4.256V₆O₂₄ formula while a homogeneity range of lyonsite (L-type phase) type structure could be described by the Co_3+1.5xFe_4−xV₆O₂₄ formula (0.476<x<1.667). Considering the values of g-factor and linewidth of each registered spectrum the existence of three types of magnetic centers was inferred and correlated with phases detected by XRD method.     

Magnetic susceptibility of vanadium garnets NaPb2Co2V3O12 and NaPb2Ni2V3O12

Vanadium garnets NaPb₂Co₂V₃O₁₂ and NaPb₂Ni₂V₃O₁₂ have been successfully synthesized. The X-ray diffraction experiments indicate that these compounds have the garnet structure of cubic symmetry of space group with the lattice constant of 12.742 Å (NaPb₂Co₂V₃O₁₂) and 12.666 Å (NaPb₂Ni₂V₃O₁₂), respectively. The magnetic susceptibility of NaPb₂Ni₂V₃O₁₂ shows the Curie-Weiss paramagnetic behavior between 4.2 and 350 K. The effective magnetic moment μ_eff of NaPb₂Ni₂V₃O₁₂ is 3.14 μ_B due to Ni²⁺ ion at A-site and the Weiss constant is −3.67 K (antiferromagnetic sign). For NaPb₂Co₂V₃O₁₂, the simple Curie-Weiss law cannot be applicable. The ground state is the spin doublet and the first excited state is spin quartet , according to Tanabe-Sugano energy diagram on the basis of octahedral crystalline symmetry. This excited spin quartet state just a bit higher than ground state influences strongly the complex temperature dependence of magnetic susceptibility for NaPb₂Co₂V₃O₁₂.     

ESR study of lithium incorporation by V2O5 single crystals

Lithium has been chemically and electrochemically incorporated into V₂O₅ single crystals. The ESR spectra of these room temperature bronzes are characterized by the same g tensor as α-Li_xV₂O₅ high temperature bronzes. This suggests that V₂O₅ acts as a three-dimensional framework host and that lithium is inserted into the channels of the orthorhombic structure. However, Li⁺ ions are not randomly distributed into the lattice. A clustering of the paramagnetic centers surrounding these ions is observed, giving an exchange narrowed ESR signal. The usual 29 hyperfine line ESR spectrum of high temperature α-Li_xV₂O₅ is again observed after heating the crystal above 300°C showing that these new bronzes convert to the previously reported Li_xV₂O₅ bronzes.     

Effect of Bi2O3 content on physical and optical properties of 15Li2O-15K2O-xBi2O3-(65−x) B2O3: 5V2O5 glass system

Multi-component bismuth borate glasses doped with vanadium ions 15Li₂O-15K₂O-xBi₂O₃-(65−x) B₂O₃: 5V₂O_5, (x=3, 5, 7, 10, 12 and 15) have been prepared using conventional melt quench technique. Characterization of the prepared glasses has been done using X-ray diffraction, differential scanning calorimetry and density measurements. The effect of Bi₂O₃ content on the optical properties of the present glass system is studied from the optical absorption spectra recorded in the wavelength range 200-800 nm. The fundamental absorption edge has been identified from the optical absorption spectra. The values of optical band gap for indirect allowed transitions have been determined using available theories. The origin of the Urbach energy is associated with the phonon-assisted indirect transitions. The density and molar volume studies indicate that Bi₂O₃ in these glasses is acting partly as network modifier and partly as network former. The variations in the optical band gap energies, density and molar volume with Bi₂O₃ content have been discussed in terms of changes in the glass structure. Values of the theoretical optical basicity, average crosslink density and the average electronic polarizability are also reported.     

Characterization and electrical properties of V2O5-CuO-P2O5 glasses

Characterization and electrical properties of vanadium-copper-phosphate glasses of compositions xV₂O₅-(40−x)CuO-60P₂O₅ have been reported. X-ray diffraction (XRD) confirms the amorphous nature of these glasses. It was observed that, the density (d) decreases gradually while the molar volume (V_m) increases with the increase of the vanadium oxide content in such glasses. This may be due to the effect of the polarizing power strength, PPS, which is a measure of ratio of the cation valance to its diameter. The dc conductivity increases while the activation energy decreases with the increase of the V₂O₅ content. The dc conductivity in the present glasses is electronic and depends strongly upon the average distance, R, between the vanadium ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron.     

Formation of V2O3 nanocrystals by thermal reduction of V2O5 thin films

We report the formation of homogeneous and stable V₂O₃ nanocrystals, directly from V₂O₅ thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V₂O₅ thin films in vacuum is remarkably different when compared to reduction of V₂O₅ single crystals and results in the formation of nanophase V₂O₃. Thermally grown V₂O₃ nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.     

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films with large remanent polarization and SrBi₂Ta₂O₉ (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages_, bilayered Pb(Zr_0.52Ti_0.48)O₃/SrBi₂Ta₂O₉ (PZT/SBT) thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P_r) of 18.37 μC/cm² than pure SBT and less polarization fatigue up to 1 × 10⁹ switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications.     

Al2O3:V3+晶体局域结构及其自旋哈密顿参量研究

提出了解释掺杂离子局域结构畸变的配体平面移动模型，建立了此模型下晶体微观结构与自旋哈密顿参量之间的定量关系.在考虑自旋与自旋、自旋与另一电子轨道和轨道与轨道作用等微小磁相互作用的基础上，采用全组态完全对角化方法，对Al₂O₃晶体中V³⁺的局域结构和自旋哈密顿参量进行了系统的研究.结果表明，V³⁺掺入Al₂O₃晶体后，上下配体氧平面间距离增大了0.0060 nm.从而成功地解释了Al₂O₃:V³⁺晶体的自旋哈密顿参量.在此基础上，研究了三角晶场下3d²离子自旋哈密顿参量的微观起源.研究发现，自旋三重态对自旋哈密顿参量的贡献是主要的，微小磁相互作用对自旋哈密顿参量的贡献只与自旋三重态有关.     

Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

Effects of epitaxial stress on the metal-insulator transition of V₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.     

A revisit of photoluminescence property for vanadate oxides AVO3 (A:K, Rb and Cs) and M3V2O8 (M:Mg and Zn)

We revisited the vanadium oxide phosphors, AVO₃ (A:K, Rb, and Cs) and M₃V₂O₈ (A:Mg and Zn) for a revaluation of possibility of these compounds for lighting applications, and the internal quantum efficiency (η) and luminescent colour properties for AVO₃ (A:K, Rb, and Cs) and M₃V₂O₈ (A:Mg, and Zn) have been presented. The AVO₃ showed the broadband emission from 380 to 800 nm, and the η for the KVO₃, RbVO₃ and CsVO₃ were 4%, 79% and 87%, respectively. The CIE colour coordinates are located at white region on the chromaticity diagram. The M₃V₂O₈ (A:Mg and Zn) also exhibited a quite broadband emission between 410 and 900 nm, indicating yellow luminescent colour. The Zn₃V₂O₈ showed high η value, 52%, compared to that of the Mg₃V₂O₈ (η=6%). This enhancement of η in the Zn₃V₂O₈ could be due to the increasing exciton diffusion assisted by the hybridizations of Zn 3d and O 2p orbitals for the valence band, and Zn 4s and Ti 3d orbitals for the conduction band.     

小尺寸VmOn+团簇的激光光解和密度泛函计算

通过激光溅射法产生了V₂O_n⁺ (n=1, 2), V₃O_n⁺ (n=1, 2, 3)和V₄O₃⁺等缺氧的钒氧团簇,并采用532和266 nm波长的激光对它们进行了光解研究. 利用密度泛函理论计算与激光光解实验相结合确定了这些团簇的几何结构和可能的光解通道. 激光光解实验表明V相似文献   

Diffusion of 55Fe in Fe2O3 single crystals

The diffusion of ⁵⁵Fe has been measured parallel to the c axis of Fe₂O₃ single crystals at temperatures in the range 708–1303°C and at an oxygen activity of unity. The tracer penetration profiles were determined using sectioning techniques. For temperatures above 900°C the tracer diffusion coefficient is given byD¹(Fe) = 1.6 × 10⁹ exp[?6.0 (eV)/kT] cm² s^?1 and below 900°C by 2.8 × 10^?9 exp[?1.8 (eV)kT]. The high-temperature behaviour is probably characteristic of pure Fe₂O₃, whereas diffusion at lower temperatures may be influenced by impurities. The most likely defects responsible for diffusion of Fe are iron interstitials and, for oxygen, oxygen vacancies, and the observed activation energies are discussed in terms of the properties of these defects. The diffusion data and defect models have been used to predict the rate of growth of Fe₂O₃ and indicate that outward Fe diffusion is the dominant transport process. Previously published data for Fe₂O₃ growth in a variety of experimental situations have been corrected to a single rate constant using a model for multilayer growth. The corrected data are all in good agreement but are approximately two orders of magnitude greater than predicted from diffusion data, which suggests that grain boundary diffusion controls the growth of Fe₂O₃ in practice.     

Dielectric dispersion in PbO-Sb2O3-As2O3:V2O5 glasses

Dielectric properties, viz. dielectric constant ε′, loss tan δ and a.c conductivity σ_ac (over a wide range of frequency and temperature) and dielectric breakdown strength of PbO-Sb₂O₃-As₂O₃ glasses doped with V₂O₅ (ranging from 0 to 0.5 mol%) are studied. Analysis of these results, based on optical absorption and ESR spectra, indicates that the insulating strength of the glasses is comparatively high when the concentration of V₂O₅ is about 0.3 mol% in the glass matrix.     

Structure and composition of the segregated Cu in V2O5/Cu system

We have investigated segregation of copper at the surface of V₂O₅ films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu₂O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V₂O₅ layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu₂O is the original cause of the segregation.     

Thermal and low energy electron bombardment induced oxygen loss of V2O5 single crystals: Transition into V6O13

Thermal treatment in UHV of clean V₂O₅ single crystals results in homogeneous oxygen loss, involving a rate-limiting surface reaction. Depending upon the pretreatment, aircleaved samples transform topotactically into V₆O₁₃, or into what we call a phase Q of probable composition V₄O₉ or V₆O_13.5. Low energy electron bombardment of clean UHV-cleaved V₂O₅(010) surfaces produces the transition V₂O₅ → V₆O₁₃ at room temperature. This effect is attributed to electron beam stimulated reactions. The influence on the transition of carbon-containing impurities is discussed. The nucleation of V₆O₁₃ on V₂O₅ is explained by a model based on a surface reaction, the rate of which is enhanced by the interaction with contaminating molecules and low energy electron bombardment. The presence of shear planes at the boundary between V₂O₅ and the V₆O₁₃ nuclei locally enhances the oxygen loss rate and allows the V₆O₁₃ nuclei to grow into the bulk.The enhanced mobility of the oxygen at these boundaries is thought to influence favorably the oxidation-regeneration rate of the V₂O₅-catalyst.