Epitaxial strain effects on the metal-insulator transition in V2O3 thin films |
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| Authors: | Shigeki Yonezawa Yuji Muraoka Yutaka Ueda Zenji Hiroi |
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| Institution: | Materials Design and Characterization Laboratory, Institute for Solid State Physics, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan |
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| Abstract: | Effects of epitaxial stress on the metal-insulator transition of V2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems. |
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| Keywords: | 71 30 +h |
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