基于标准CMOS工艺的UV/blue光电探测器

基于UMC 0.18μm CMOS工艺,提出一种适合紫外/蓝光探测的探测器,该器件由栅体互联的NMOS晶体管和横向/纵向光电二极管构成.其中,浅结的光电二极管由UMC工艺中Twell层(浅P阱)和Nwell层形成,以增强其对紫外/蓝光的吸收,栅体互联的NMOS晶体管可以放大光电流,提高探测器的灵敏度和动态范围.仿真结果表明,本文设计的紫外/蓝光探测器具有低的工作电压和暗电流,对300~550nm波长范围的光具有高的响应度和宽的动态范围.在弱光条件下(光强小于1μW/cm2),响应度优于105 A/W,随着光强增大,响应度逐渐降低,但总体仍超过103 A/W.     

氧化镓薄膜的制备及其日盲紫外探测性能研究

采用射频磁控溅射方法在蓝宝石单晶衬底上沉积氧化镓(Ga2O3)薄膜,并通过光刻剥离工艺(Lift-off)制备了金属-半导体-金属结构的Ga2O3日盲紫外探测器。对不同温度下沉积的Ga2O3薄膜分析表明,在800℃下获得的薄膜结晶质量最好,薄膜的导电性则随着沉积温度的上升先增大后减小。在800℃制备的β-Ga2O3薄膜的可见光透光率大于90%,光学吸收边在255 nm附近。在10 V偏压下,探测器的暗电流约为1n A,光电流达800 n A,对紫外光响应迅速。器件的响应度达到0.3 A/W,260 nm波长处的响应度是290 nm波长对应响应度的40倍,可实现日盲紫外波段的探测。     

电化学沉积法制备ZnO纳米柱及自驱动紫外探测性能研究

采用提拉法在ITO衬底上制备种子层,并使用电化学沉积制备高度取向的氧化锌纳米棒,研究了不同提拉次数下籽晶层厚度与电化学沉积电位对氧化锌纳米棒形貌的影响。在此基础上,制备了自驱动型紫外探测器并测试了其光响应谱。结果表明,该探测器可以对部分紫外波段(300~400 nm)有选择性地光响应,峰值响应度为0.012 A/W。     

ZnO单晶和BeZnO合金的生长及其紫外探测器研究

用分子束外延(MBE)的方法在c面蓝宝石衬底上生长出了高质量的ZnO单晶薄膜和BexZn1-xO合金薄膜。X射线光电子能谱(XPS)测试结果表明,合金材料中Be元素的摩尔分数分别为1.8%、4.9%、8.0%和15.3%。在此基础上制备了ZnO基和BexZn1-xO基的金属-半导体-金属(MSM)结构紫外探测器。ZnO单晶探测器的响应波长为375nm,在1V电压下,350nm处的光响应度高达43A/W,光电流和暗电流之比达到105量级。在BexZn1-xO基紫外探测器中,其截止响应波长随着合金中Be含量的增加逐渐蓝移,其中Be0.153-Zn0.847O合金探测器的截止响应波长为366nm,紫外波段和可见波段的光电流之比达到2~3个数量级,具有良好的信噪比。此外,提出了氧气等离子体表面处理降低探测器暗电流的方法,并使ZnO单晶探测器的暗电流降低了4个数量级。     

基于Pt/GaN/AlGaN异质结高响应度双波段紫外探测器

提出一种在AlGaN基PIN器件的p-GaN表面上沉积Pt,形成肖特基势垒(SB)-PIN异质结器件,器件的能带和载流子的输运发生了变化,这种新型光电探测器实现了双波段紫外探测,可分别工作在光伏和光电导模式下。器件在275 nm波长的紫外光照射的负偏置电压下,工作模式为光伏探测,当入射光功率密度为100μW/cm²,偏置电压为-10 V时,器件得到最大响应度(0.12 A/W);当偏置电压为-0.5 V时,器件得到最大探测率(1.0×10¹³ cm·Hz^1/2·W^-1)。器件在正偏置电压工作模式下可作为高响应、高增益的光电导探测器,当偏置电压为+10 V时,用275 nm和365 nm波长的紫外光照射(光功率密度为100μW/cm²),器件的响应度分别为10 A/W和14 A/W,外量子效率分别为4500%和4890%。所设计的双波段多功能器件将极大地扩展基于AlGaN的紫外探测器的用途。     

石墨烯/二氧化钛异质结场效应探测器光电特性

利用二氧化钛薄膜光吸收及表面钝化特性,在硅晶圆基底表面制备石墨烯/二氧化钛异质结场效应管光电探测器,并研究其光电响应特性.结果表明,二氧化钛钝化后的探测器可以有效抑制沟道表面的气体小分子吸附,降低器件的暗电流漂移;同时,探测器利用石墨烯的电荷敏感和复合薄膜的光谱吸收特性,显著提高了石墨烯场效应管的响应度.紫外波段,顶层二氧化钛吸光产生的光生电子将注入到石墨烯沟道中,对石墨烯沟道产生n型掺杂,器件最大响应度可达3.5×10~5A/W.在可见光波段,因为二氧化钛层与石墨烯薄膜间存在杂质能级,界面间的电荷转移使沟道载流子寿命显著提高.相对于传统的二氧化钛阵列探测器,该探测器在响应波段与响应度性能上都具有明显优势.     

InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器（英文）

为了实现紫外-可见波段的高响应度/低成本的广光谱光电探测,我们制备了基于一维p型Se微米线与二维n型InSe纳米片的混维范德瓦尔斯异质结广光谱探测器。得益于Se微米线与二维层状结构InSe纳米片的高结晶质量,该器件在紫外-可见光广光谱范围都具有非常高的响应度,该器件的响应截止边为700 nm。值得指出的是,该器件在-5 V的偏压下,对460 nm的光源响应度可以达到108 mA/W,该数值比原来的Se探测器高了800%。这项研究有利于拓展我们对范德瓦尔斯异质结的认识,也为今后制备高性能的低维光电探测器提供了一种新的途径。     

MSM结构ZnO紫外探测器的制备与性质

采用射频磁控溅射在石英衬底上制备了c轴择优取向的ZnO薄膜,利用蚀刻技术制备了MSM结构的光导型紫外探测器。在3V偏压下,器件的暗电流小于250nA,光响应峰值在370nm,响应度是0.34A/W。其紫外(360nm)与可见光(420nm)的抑制比为4个数量级。器件的光响应时间上沿仅为20ns。     

高性能SOI基GePIN波导光电探测器的制备及特性研究

本文报道了在SOI衬底上外延高质量单晶Ge薄膜并制备高性能不同尺寸Ge PIN波导光电探测器.通过采用原子力显微镜、X射线衍射、拉曼散射光谱表征外延Ge薄膜的表面形貌、晶体质量以及应变参数,结果显示外延Ge薄膜中存在约0.2%左右的张应变,且表面平整,粗糙度为1.12 nm.此外,通过暗电流、光响应度以及3 dB带宽的测试来研究波导探测器的性能,结果表明尺寸为4μm×20μm波导探测器在-1 V的反向偏压下暗电流密度低至75 mA/cm~2,在1.55μm波长处的响应度为0.58 A/W,在-2 V的反向偏压下的3 dB带宽为5.5 GHz.     

基于Se和有机无机钙钛矿异质结的宽光谱光电探测器制备及其光电特性研究

针对目前高效、稳定的p型掺杂一直较难实现的问题,本文采用化学气相沉积方法制备出了高结晶质量的p型半导体材料Se微米线。同时,还制备出了基于单根Se微米线的光电探测器,其在紫外和可见光波段有较宽的响应范围,响应截止边为675 nm。该器件在5 V偏压下的峰值响应度可达2.8 mA/W(600 nm)。在此基础上,利用p型Se微米线与钙钛矿材料CH_3NH_3PbC l_3制备了p-n结型器件,与单根Se微米线光电探测器相比,响应时间和响应度都有明显提升,尤其是异质结的响应度比纯Se微米线提高了850%。这一研究结果说明本文制备的有机无机复合结构p-n结非常有望应用到高性能光电探测器中。     

A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics

Near infrared (NIR) detectors, operating in the 1.3–1.6 μm region, are key elements in a number of applications ranging from optical communications to remote sensing. InGaAs and Ge are currently the materials of choice for the fabrication of NIR detectors due to their good absorption and transport properties. However, as the required performances increase (bit-rate in optical communications, number of pixels in imaging, etc.), it becomes more and more important to reduce the separation from detectors and driving/biasing and amplifying electronics, by integrating the two components on the same chip.We demonstrate an array of NIR detectors monolithically integrated with standard silicon CMOS readout electronics. The employed low temperature process allowed the integration of the detectors as the last step of chip fabrication. The integrated micro-system consists of a linear array of 120×120 μm² pixels, an analog CMOS multiplexer and a transimpedance amplifier. The chip exhibits a good photoresponse in the NIR, with responsivities as high as 43 V/W at 1.3 μm, dark currents of 1 mA/cm² and inter-pixel cross-talk better than −20 dB.     

Operating temperature and the responsivity of split-off band detectors

A GaAs/AlGaAs heterojunction is used as a spin-split-off band IR detector operating at or around room temperature. This detector structure followed a similar layer architecture to the quantum well IR photo detectors (QWIP) and Heterojunction Interfacial Work function Internal Photoemission (HEIWIP) detectors. Compared to QWIPs, the emitter layer thickness is increased to avoid confinement. Unlike either the QWIPs or HEIWIPs, these detectors will have two energy gaps (barriers) to obtain the wavelength threshold which could be used to design detectors either for optimum operating temperature or optimum responsivity. The free carrier energy gap is determined by the Al fraction and the spin-split-off transition energy provides another handle on controlling the effective threshold of the detector. Unlike QWIPs, these will also detect normal incidence radiation. A preliminary detector showed a peak responsivity of 0.29 mA/W at 2.5 μm at room temperature.     

Fabrication of carbon nanotube-threephase organic photodetectors with high responsivity and wide spectrum and the underlying mechanisms

In this work, we incorporated single-walled carbon nanotubes (SWCNTs) into organic three-phase heterojunction active layer detectors, and systematically experimentally investigated the influences of single walled carbon nanotubes (SWCNTs) on the photoabsorption and photoelectric properties of the organic three-phase heterojunction detectors. Under -1 V bias voltage, the average photoresponsivity of three primary colors detector is 475 mA/W, about 2–3 times higher than that of similar devices that without SWCNTs. The average external quantum efficiency (EQE) increases to 111%. The results show that the incorporation of single-walled carbon nanotubes in the three-phase bulk heterojunction active layer maintains the original spectral morphology, while increases a higher degree of aggregation and crystallinity of the organic conjugated polymer, and further enhances a larger capacity of light absorption, regardless of the number of active layer's mixed phases. Under -1 V bias voltage, the average photoresponsivity of three primary colors detector is 475 mA/W, about 2–3 times higher than that of similar devices. The average external quantum efficiency (EQE) can be increased to 111%. In terms of carrier transport, SWCNT can increase the exciton dissociation area, dissociation rate of the film, and provide a fast transport channel for the charge, therefore improve the charge collection of the electrode. In a concentration range of 0.75–1.75 wt% and in high-energy photon excitation, single-walled carbon nanotubes can produce a multiple exciton generation.     

Visible-blind, ultraviolet-sensitive photodetector based on SrTiO3 single crystal

High-sensitivity and visible-blind ultraviolet (UV) photoconductive detectors based on SrTiO(3) single crystal with interdigitated electrodes are reported. The responsivities of photovoltage and photocurrent can reach 2.13x10(5) V/W and 213 mA/W, respectively, at 330 nm at ambient temperature, and the corresponding quantum efficiency eta reaches 80.2%. The dark current is lower than 50 pA at 10 V bias, and the UV/visible contrast ratio is about four orders of magnitude with a sharp cutoff at 390 nm. The experimental results demonstrate that SrTiO(3) single crystal has potentially wide applications in UV detection.     

GaN基高压直流发光二极管制备及其性能分析

GaN基高压直流发光二极管工艺制备, 采用蓝宝石图形衬底(PSS) 外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件, 该结构器件发光效率最高, 封装白光后, 在色温4500 K, 驱动电流20 mA时, 光效116.06 lm/W, 对应电压50 V. 测试其I-V曲线表明, 开启电压为36 V, 对应驱动电流为1.5 mA; 在电流15 mA至50 mA时, 光功率随驱动电流增加近似于线性增加, 在此区域光效随电流增加而降低的幅度比较缓慢, 表明GaN基高压直流LED适宜于采用大电流密度驱动, 而不会出现驱动电流密度增加导致量子效率明显下降(efficiency droop), 为从芯片层面研究解决量子效率下降难题提供了一种新思路.     

Fe3O4P型掺杂对有机电致发光器件性能的提高

将金属氧化物Fe3O4在空穴传输材料中进行P型掺杂并制作有机电致发光器件,使器件的开启电压由5 V降至2.5 V;20 mA/cm2电流密度下的功率效率由1.2 lm/W提高到2.0 lm/W;10 V下的亮度由1 680cd/m2提高到30 590 cd/m2.紫外-可见-红外吸收光谱及紫外光电子能谱的测试分析结果表...     

HOT infrared photodetectors

At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection. Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector. In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.     

Type-II superlattice detectors for free space optics applications and higher operating temperature conditions

The utmost limit performance of interband cascade detectors optimized for the longwave range of infrared radiation is investigated in this work. Currently, materials from the III–V group are characterized by short carrier lifetimes limited by Shockley-Read-Hall generation and recombination processes. The maximum carrier lifetime values reported at 77 K for the type-II superlattices InAs/GaSb and InAs/InAsSb in a longwave range correspond to ～200 and ～400 ns. We estimated theoretical detectivity of interband cascade detectors assuming above carrier lifetimes and a value of ～1–50 μs reported for a well-known HgCdTe material. It has been shown that for room temperature the limit value of detctivity is of ～3–4×10¹⁰ cmHz^1/2/W for the optimized detector operating at the wavelength range ～10 μm could be reached.     

室温下溅射法制备高迁移率氧化锌薄膜晶体管

为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。     

有源区掺杂的AlGaN基深紫外激光二极管性能优化

为了改善深紫外激光二极管的性能,本文提出了有源区量子势垒n掺杂、p掺杂和n-p掺杂三种结构.利用Crosslight软件,对原始结构和有源区掺杂的三种结构进行仿真研究,比较四种结构的P-I特性曲线、V-I特性曲线、载流子浓度、辐射复合速率和能带图.仿真结果表明,有源区量子势垒n-p掺杂结构的性能更优,其阈值电压和阈值电流分别为4.40V和23.8mA;辐射复合速率达到1.64×10²⁸cm^-3/s;同一注入电流下电光转换效率达到42.1%,比原始结构增加了3.9%;改善了深紫外激光二极管的工作性能.