ZnTe结构相变、电子结构和光学性质的研究

运用密度泛函理论体系下的投影缀加波方法, 对闪锌矿和朱砂相结构的ZnTe在高压下的状态方程和结构相变进行了研究, 并分析了相变前后的原胞体积、电子结构和光学性质. 结果表明: 闪锌矿结构转变为朱砂相结构的相变压力为8.6 GPa, 并没有出现类似材料高压导致的金属化现象, 而是表现出间接带隙半导体特性. 相变后, 朱砂相结构Zn和Te原子态密度分布均向低能级方向移动, 带隙变小; 轨道杂化增强, 更有利于Te 5p与Zn 3d间的电子跃迁, 介电常数虚部主峰明显增强, 但宏观介电常数不受压力的影响.     

ZnSe相变、电子结构的第一性原理计算

基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿结构(ZB)和岩盐结构(RS)的ZnSe在0—20GPa高压下的几何结构、态密度、能带结构进行了计算研究,分析了闪锌矿结构ZnSe和岩盐结构ZnSe的几何结构.在此基础上,研究了ZnSe的结构相变、弹性常数、成键情况以及相变压强下电子结构的变化机理.结果发现:通过焓相等原理得到的ZB相到RS相的相变压强为15.3GPa,而由弹性常数判据得到的相变压强为11.52GPa,但在9.5GPa左右并没有发现简单立方相的出现;在结构相变过程中,sp3轨道杂化现象并未消除,Zn原子的4s电子在RS相ZnSe的导电性中起主要贡献.     

ZnSe弹性常数和相变的从头计算

利用平面波密度泛函理论研究了ZnSe从闪锌矿结构到盐石结构的相变.结果发现通过H相等得到的相变压力为16.8 GPa,与通过高压弹性常数值判断所得到的结果相符.     

高压下缺陷对锐钛矿相TiO2多晶电输运性能的影响:交流阻抗测量

采用高压原位阻抗谱测量技术对锐钛矿Ti O₂多晶的电输运性质进行了系统研究.在6.4, 11.5和24.6 GPa压力处发现了晶粒和晶界的电阻、参数因子和弛豫频率的反常变化行为.研究分析表明:6.4和11.5 GPa压力点分别对应着Ti O₂由锐钛矿转变为a-Pb O₂,再转变为斜锆石的结构相变,当压力高于24.6 GPa时,Ti O₂完全转变为斜锆石相.通过分析晶粒和晶界电阻在压力作用下的变化行为可知,本征缺陷的存在对Ti O₂高压下电输运性质的变化起着关键的作用.在6.4 GPa压力处,相变的发生导致缺陷的作用发生了变化,由作为复合中心的深能级缺陷转变为向导带和价带提供载流子的浅能级缺陷,并且作为浅能级缺陷存在至实验最高压力点38.9 GPa,浅能级缺陷在能带中的位置也随着相变发生而改变.晶粒和晶界的激活能随着压力升高而降低,表明高压下载流子在晶粒和晶界的输运变得更加容易.此外, Ti O₂晶粒和晶界的弛豫频率比值随压力的升高而不断减小,高压下的晶界效...     

一种高密度玻璃的多形性高压相变和物态方程研究

在二级轻气炮上用无氧铜飞片直接撞击重玻璃平板样品(密度为4.817 g/cm³,材料牌号:ZF6)开展了冲击压缩实验研究,压力范围为52.1—167.8 GPa,并采用多通道瞬态辐射高温计和光分析技术测量了其雨贡纽线、高压声速和冲击波温度等动态特性.实验结果显示,上述性质在三个不同压力区间出现不连续性变化,表明冲击压缩下该样品材料存在多形性高压相变,相变起始压力分别为23,78和120 GPa.实测声速先是随冲击压力的增高而增加,并在78 GPa附近出现急剧下降,之后又随压力增长,并在120 GPa之后下降到体波声速,表明材料进入高压熔化相.温度数据同样在78和120 GPa处出现明显的不连续变化,并在120 GPa之后变化趋于平缓与计算的Lindeman熔化线相符,进一步印证了上述相变行为.实测雨贡纽数据与LASL数据库中的重玻璃数据相符,结果显示除23 GPa附近有一明显的突变外,高压区数据几近线性变化,表明重玻璃的两个高压相变均为二级相变.本文报道的重玻璃材料高压物性数据和序列相变认识对于发展反向加载技术、提高材料声速测量精度和适用压力范围具有实用价值. 关键词： 重玻璃 冲击温度 卸载声速 冲击相变     

ZnSe高压相变和声子谱的第一性原理研究

采用基于第一性原理的平面波赝势和广义梯度近似方法,对闪锌矿(ZB)、纤锌矿(WZ)和岩盐(RS)结构的ZnSe在0~40GPa压力下的热力学性质及相变特性进行了研究。通过数值计算得出3种结构ZnSe的能量随体积变化的曲线,在此基础上,研究了不同结构ZnSe的晶格常数、高温高压物态方程、结构相变及弹性性质,解释了高压下结构相变的机理,并通过焓相等原理得到ZB结构到RS结构的相变压力为14.95GPa。最后,利用VASP软件结合Phonopy计算了ZB结构和RS结构ZnSe的声子谱,并将温度效应引入,得到亥姆霍兹自由能、熵和等容热容随温度的变化关系。     

超高压下碘的结构相变

 采用DAC高压X光技术，在320 GPa压力下，对碘进行了结构相变的研究。用耐腐蚀材料Mo作封垫，在室温和无保护气氛下装样。采用Mo内标和红宝石荧光测量进行压力校准。结果表明，在21 GPa时，开始发生结构相变，由面心正交相（Ⅰ相），转变为体心正交相（Ⅱ相），体积缩小2%左右。在21~25 GPa之间为两相共存区；在25 GPa以上完全转变为新的高压单相（Ⅱ相）。此相变为可逆相变。     

金刚烷的高压拉曼光谱研究

对金刚烷(C_(10)H_(16))进行了常温原位高压拉曼光谱研究,最高压力为25 GPa。通过分析高压拉曼光谱,结合拉曼频移随压力的变化情况,得出在实验压力范围内C_(10)H_(16)发生了多次相变。0.6 GPa时,C_(10)H_(16)由常温常压下的无序相(α相)转变为有序相(β相);继续加压至1.7 GPa时,第2次结构相变开始,直至3.2 GPa,第2次相变完全结束;第3次相变开始于6.3 GPa,结束于7.7 GPa;22.9 GPa时发生了第4次结构相变。另外,首次在拉曼光谱上探测到第3次相变过程中晶格振动峰的变化,说明第3次相变并非前人报道的等结构相变。     

高压下铁的电导率及X射线衍射研究

 用四点电极法及磁控溅射结合光刻集成电极的方法，测量了铁在25 GPa压力下的电阻随压力的变化；用微区X射线衍射仪原位测量了铁在25 GPa压力下晶胞参数随压力的变化关系。实验结果表明，铁在13.7 GPa时发生相变，由体心立方相转变为六方密堆相，在18.1 GPa时相变结束。利用高压下铁的电阻数据，结合X射线衍射结果，推导出铁的电导率随压力的变化关系。     

六角相B-C-N化合物的高压相变研究

采用原位高压同步辐射能散X射线衍射和金刚石压砧技术,实验研究了新型超硬材料六角相B0.47C0.23N0.30的高压相变及物理特性,压力范围为1.4～30 GPa.实验结果表明,六角相B..47C0.23N0.30在14.9 GPa压力下发生了相变,形成的新相为六方纤锌矿结构.计算得到了具有六方纤锌矿结构的B0.47C...     

CdSe在高压下的电学性质及相变

 利用在金刚石压砧上集成的微电路,原位测量了CdSe多晶粉末在温度为300~450 K、压力达到23 GPa时电阻率随温度和压力的变化关系。实验结果表明：在加压过程中,电阻率在2.6 GPa压力时出现的异常改变,对应着CdSe从纤锌矿向岩盐矿结构的转变,而在6.0、9.8、17.0 GPa等压力处出现的电阻率异常,则是由CdSe中的电子结构的变化所引起的;在卸压过程中,只在约14.0和3.0 GPa压力下观察到了两个电阻率异常点。通过对电阻率随压力变化曲线的模拟,得出了CdSe高压相的带隙随压力的变化关系,据此预测CdSe金属化的压力应在70~100 GPa之间。变温实验结果表明,在实验的温度和压力范围内,CdSe的电阻率均随温度的增加而升高。     

The electrical transportation and carrier behavior of ZnSe under high pressure

With in situ electrical resistivity and Hall effect measurement, electrical transportation property and charge carrier behavior of ZnSe were investigated under high pressure using a diamond anvil cell (DAC). The electrical resistivity changed discontinuously at 7.7 and 11.9?GPa, corresponding to the phase transitions of ZnSe. In the pressure interval of 7.7–11.9?GPa, the electrical resistivity changed continuously, indicating the existence of the intermediate phase between the zinc blende and rock salt phases. The difference of carrier characteristic between the intermediate and rock salt phases can also suggest the existence of the intermediate phase. For the intermediate phase, the increase in electrical resistivity is from the decrease in mobility. While for the rock salt phase, the increase in charge carrier concentration leads to the decrease in electrical resistivity.     

Measurement of Seebeck effect (thermoelectric power) at high pressure up to 40 GPa

The paper reports details of a high-pressure thermoelectric power (Seebeck effect) technique up to 40 GPa. Several different types of high-pressure cells with anvil insets are presented. The technique was applied for measurements of pressure dependence of the thermopower of several substances including elemental metals (lead, Pb; indium, In), cerium-nickel alloy, Ce-Ni and sulphur, S. Two peculiarities in the pressure dependences of the thermopower of CeNi were found and attributed to structural transformations, near ∼5 and ∼10 GPa. These transitions were confirmed in direct X-ray diffraction studies. Sulphur compressed to 40 GPa exhibited a hole type conductivity and the thermopower value was about ∼+1 mV/K. Additionally, as an example of pressure calibration, the data on the electrical resistivity of zinc selenide, ZnSe, are given in a range of 0-23 GPa. These data suggest three possible scenarios of phase transitions from a rock salt (RS) high-pressure phase of ZnSe under decompression: RS→zinc blende (ZB), RS→cinnabar→ZB, and RS→wurtzite.     

Pressure effect on magnetic phase transition and spin-glass-like behavior of GdCo_2B_2

We systematically investigate the effect of pressure on the magnetic properties of GdCo_2B_2 on the basis of alternating current(AC) susceptibility,AC heat capacity and electrical resistivity measurements under pressures up to 2.2 GPa.A detailed magnetic phase diagram under pressure is determined.GdCo_2B_2 exhibits three anomalies that apparently reflect magnetic phase transitions,respectively,at temperatures T_C= 20.5 K,T_1= 18.0 K and T_N= 11.5 K under ambient pressure.Under pressures up to 2.2 GPa,these anomalies are observed to slightly increase at T_Cand T_1,and they coincide with each other above 1.6 GPa.Conversely,they decrease at T_N and disappear under pressures higher than 1.4 GPa.The results indicate that the low-temperature magnetic phases can be easily suppressed by pressure.Moreover,the spin-glass-like behavior of GdCo_2B_2 is examined in terms of magnetization,aging effect and frequency dependence of AC susceptibility.A separation between the zero-field-cooled(ZFC) and field-cooled(FC) magnetization curves becomes evident at a low magnetic field of 0.001 T.A long-time relaxation behavior is observed at 4 K.The freezing temperature Tfincreases with frequency increasing.     

InSe的高压电输运性质研究

高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的. 关键词： InSe 高压 电阻率 霍尔效应     

Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell

In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.     

Electrical property and phase transition of CdSe under high pressure

In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.     

Phase Transition of FeS in Terms of In-Situ Resistance Measurement

Electrical properties of stoichiometric iron sulfide （FeS） are investigated under high pressure with a designed diamond anvil cell. The process of phase transition is reflected by changing the electrical conductivity under high pressure, and the conductivity of FeS with the NiAs structure is found to be much smaller than other phases. Two new phase transitions without structural change are observed at 34.7 GPa and 61.3 GPa. The temperature dependence of the conductivity is found to be similar to that of a semiconductor when the pressure is higher than 35 GPa     

Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass

An irreversible pressure induced semiconductor-to-metal transition in bulk Ge₂₀Te₈₀ glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.     

High-precision measurements of the compressibility and the electrical resistivity of bulk <Emphasis Type="Italic">g</Emphasis>-As<Subscript>2</Subscript>Te<Subscript>3</Subscript> glasses at a hydrostatic pressure up to 8.5 GPa

High-precision studies of the volume and the electrical resistivity of g-As₂Te₃ glasses at a high hydrostatic pressure up to 8.5 GPa at room temperature are performed. The glasses exhibit elastic behavior in compression only at a pressure up to 1 GPa, and a diffuse structural transformation and inelastic density relaxation (logarithmic in time) begin at higher pressures. When the pressure increases further, the relaxation rate passes through a sharp maximum at 2.5 GPa, which is accompanied by softening the relaxing bulk modulus, and then decreases, being noticeable up to the maximum pressure. When pressure is relieved, an unusual inflection point is observed in the baric dependence of the bulk modulus near 4 GPa. The polyamorphic transformation is only partly reversible and the residual densification after pressure release is 2%. In compression, the electrical resistivity of the g-As₂Te₃ glasses decreases exponentially with increasing pressure (at a pressure up to 2 GPa); then, it decreases faster by almost three orders of magnitude in the pressure range 2–3.5 GPa. At a pressure of 5 GPa, the electrical resistivity reaches 10^–3 Ω cm, which is characteristic of a metallic state; this resistivity continues to decrease with increasing pressure and reaches 1.7 × 10^–4 Ω cm at 8.1 GPa. The reverse metal–semiconductor transition occurs at a pressure of 3 GPa when pressure is relieved. When the pressure is decreased to atmospheric pressure, the electrical resistivity of the glasses is below the initial pressure by two–three orders of magnitude. Under normal conditions, both the volume and the electrical resistivity relax to quasi-equilibrium values in several months. Comparative structural and Raman spectroscopy investigations demonstrate that the glasses subjected to high pressure have the maximum chemical order. The glasses with a higher order have a lower electrical resistivity. The polyamorphism in the As₂Te₃ glasses is caused by both structural changes and chemical ordering. The g-As₂Te₃ compound is the first example of glasses, where the reversible metallization under pressure has been studied under hydrostatic conditions.