多孔硅的分形结构及其荧光特性

用扫描电子显微镜(SEM)对多孔硅的结构进行了分析.结果显示多孔硅具有分形特性,同计算机模拟结果一致;用荧光光谱仪,研究了多孔硅的荧光特性与激发波长的依赖关系.激发光谱测量结果发现,当激发波长从650 nm变到340 nm时,荧光谱峰位从红端780 nm连续蓝移到500 nm.综合分析说明：正是由于多孔硅的分形微结构以及量子限制效应,导致了多孔硅的荧光特性随激发波长改变的物理现象.     

非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响

采用水热腐蚀法制备了铁钝化多孔硅样品,样品光致发光谱的荧光峰位于2.0eV附近,半峰宽约为0.40eV。激发波长从240nm增大到440nm的过程中,荧光峰先红移再蓝移,最后基本稳定,变化曲线呈勺型。通过分析15片发光多孔硅样品的统计结果,发现荧光峰逆转所对应的激发波长位于330nm附近,相应的激发光子能量约为3.8eV。样品光致发光谱随激发波长的勺型变化过程与≡Si—O↑和≡Si—O↑…H—O—Si≡两类非桥氧空穴发光中心共同作用时的发光行为一致。     

SiO2薄膜中咔唑的发光特性

利用溶胶-凝胶工艺制备了含咔唑的SiO2薄膜,实验测量了薄膜样品的光致发光特性.结果发现：样品不仅能发射红光,并且当激发波长从610 nm连续减小到400 nm时,其发射谱峰位又能从760 nm连续蓝移到550 nm左右.薄膜样品的荧光特性随激发波长而改变的现象可归因于咔唑分子被紧缩在凝胶内部的微孔中受到挤压而导致共轭尺寸发生变化.     

不同波长激发光诱导奶牛血液荧光光谱特性

实验样品取自正常奶牛静脉血液并用枸橼酸钠抗凝。实验结果表明:激发光波长不同,激发的荧光光谱线的强度和峰值不同;实验中用220～270nm波长的光激发荧光时,在317,367nm荧光主峰强度出现竞争现象;比较多种激发光激发的荧光光谱的实验结果知:用220,230,240,290,350,480,500nm波长的激发光激发下的荧光强度较强,而用其他波长的激发光激发下的荧光强度较弱,且在317,365,367,388,348,463,467,607,638nm波长附近出现比较强的峰值;合适波长的激发光对奶牛血液会有比较强的生物学效应。     

激发单色仪波长校准的标准物质的探索

找到了一种用于荧光光谱仪的激发单色仪波长校准用的标准物质。用光激发氧化钬滤光片标准物质GBW(E)130112时,能发射547.7 nm的荧光谱线。测量547.7 nm荧光的激发谱,发现激发谱峰的波长测量值为333.56, 360.43,418.39 nm,与上述标准物质证明材料所给出的真值333.8, 360.9,418.5 nm吻合得较好,说明用氧化钬滤光片标准物质GBW(E)130112可以用来作为荧光光谱仪的激发单色仪校准用的标准物质。如果选用发光效率高的材料作为稀土离子掺杂的基质和有效地提高样品的纯度、减小交叉弛豫,那么,氧化钬滤光片作为荧光光谱仪的激发谱波长校准用的标准物质的性能还会有大幅度的提高。     

多孔硅微秒光致发光衰减

在微秒范围内测量了多孔硅的光致发光衰减,研究了衰减参数与发光波长、样品制备条件的关系,发现衰减参数与发射波长有关,但不依赖于样品制备条件。用发光三层模型解释了实验结果。     

水热腐蚀时间对铁钝化多孔硅表面形貌和光致发光的影响

采用水热腐蚀法制备了4个腐蚀时间不同的铁钝化多孔硅样品,铁钝化多孔硅样品表面呈海绵结构,随着腐蚀时间增加,样品表面的平整度下降,腐蚀孔尺寸差别有增大的趋势。在250nm光激发下,样品发光峰位于620nm附近,半峰全宽约130nm。腐蚀时间从10min增加到40min,4个样品的发光峰并未出现定向的红移或蓝移。结合样品傅里叶变换红外吸收光谱的结果,铁钝化多孔硅的光致发光行为可归因于量子限制-发光中心作用,相应的辐射复合发光中心为非桥氧空穴。     

ZnO/PAA复合体系的制备和光致发光研究

通过加热法在多孔氧化铝模板的纳米孔内组装了ZnO颗粒,形成了ZnO和多孔氧化铝模板(PAA)复合体系.用Y-2000型X射线衍射仪表征了复合体系的结构,用TU-1901型紫外-可见分光光度计测量了复合体系的光学透过率,用WFY-28型荧光分光光度计测量了复合体系的光致发光.结果显示,多孔氧化铝模板中的ZnO结晶良好,平均晶粒尺寸10.8 nm;多孔氧化铝模板组装ZnO后透过率明显下降,550 nm处只有45%左右;ZnO/PAA复合体系在短波长光激发下有一个强的430 nm峰位的发光峰,随着激发波长增大,发光峰位红移,并且逐渐分解为两个峰,峰位分别在410 nm和460 nm.     

电化学法制备的多孔硅发光

在（１１１）晶向的ｎ型单晶硅片上，用电化学腐蚀的方法成功地制备出多孔硅膜，室温下，在３４４ｎｍ波长的光激发时用肉眼观察到明亮的桔红色荧光（５７７ｎｍ）研究了ＨＦ浓度，光照强度，电流密度和电化学腐蚀时间对多孔硅膜的发射波长和发光强度的影响，相应的多孔硅量子线度为１．５ｎｍ。     

飞秒脉冲激光辐照下硅表面光致荧光特性(英文)

采用钛宝石飞秒脉冲激光对单晶硅在空气中进行辐照,研究了硅表面在不同扫描速度和能量密度下的光致荧光特性。光致荧光谱(PL)测量表明,在样品没有退火处理的情况下,激光扫描区域观察到橙色荧光峰(603nm)和红色荧光带(680nm附近)。扫描电子显微镜(SEM)测量显示,在飞秒脉冲激光辐照硅样品的过程中硅表面沉积了大量的纳米颗粒。利用傅里叶变换红外光谱仪(FT-IR)检测到了低值氧化物SiOx(x2)的存在,并且结合能谱仪(EDS)检测结果发现氧元素在光致发光中起着重要作用。研究表明:603nm处橙色荧光峰来自微构造硅表面低值氧化物SiOx,680nm附近红色荧光带来自量子限制效应。同时样品表面硅纳米颗粒的尺寸和氧元素的浓度分别决定了红色荧光带和橙色荧光的强度,通过调节飞秒激光脉冲的扫描速度和能量密度,可以有效地控制样品的荧光强度。     

Correlation of excitation-wavelength dependent photoluminescence with the fractal microstructures of porous silicon

The correlation of the excitation-wavelength dependent photoluminescence with the fractal microstructures of porous silicon has been investigated. As the excitation wavelength increases from 340 to 650 nm, the photoluminescence of porous silicon redshifts from 500 to 780 nm. The excitation-wavelength dependent photoluminescence suggests the existence of a size distribution for the large number of silicon nanocrystallites in porous silicon. Using scanning electron microscopy and computer simulation, we have investigated the fractal features of the microstructures of porous silicon. Our results have demonstrated that the fractal features in the microstructures of porous silicon indicate the existence of a size distribution for the silicon nanocrystallites in porous silicon. The recorded excitation-wavelength dependent photoluminescence of porous silicon can be interpreted in terms of the bond-order-length-strength correlation theory.     

胶体金纳米颗粒的荧光光谱特性

研究了胶体金纳米颗粒的荧光激发光谱和荧光发射光谱特性.增大激发光的波长,发射峰相应红移并在629nm达到最强,对应的灵敏激发波长为473nm.增加金纳米颗粒粒径,观察到发射谱的峰值先增大然后减小.发射峰产生的原因在于电子与带间空穴的复合导致非线性共振光散射.发射峰强度和金颗粒粒径的关系可以用表面等离子体震荡引起的局域场增强来解释,数值计算结果和实验结果能较好的吻合.     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

不同波长激发光对血清荧光光谱影响的实验研究

采用日本岛津荧光光度计RF5301,研究了血清的荧光光谱与激发光波长的关系。实验结果表明：在不同波长的紫外光激励下,血清产生的荧光光谱线型及峰值波长基本相同,与激励光波长无关,但荧光峰强度随激励光波长变化而变化。血清的荧光光谱有两个较强的荧光发射区,其中第一个发射区处于300～410 nm,第二个发射区处于410～530 nm。当激发光波长小于310 nm,荧光主要集中在第一发射区,荧光峰位于330和370 nm处,并产生竞争现象。当激发光波长大于250 nm时,只出现330 nm处的荧光峰,其最佳激励光波长为300 nm;当激发光波长大于320 nm,第一发射区的荧光变弱,在第二发射区的荧光变强,荧光峰位于452 nm。此研究为血液的光谱特性研究提供了实验依据,对光诱导荧光光谱诊断技术中激发光波长的选择具有一定的参考价值。     

Modification of erbium photoluminescence excitation spectra for the emission wavelength 1.54 μm in mesoscopic structures

Photoluminescence excitation (PLE) spectra for the emission wavelength 1.54 μm were studied for erbium-doped xerogels embedded in artificial opals and porous anodic alumina films. Opals were chosen with photonic stop-band in green spectral range, where excitation of 1.54 μm occurs most efficiently. In comparison to the structure erbium-doped titania xerogel/porous anodic alumina/silicon the photoluminescence excitation spectra for 1.54 μm emission wavelength significantly changes for the same xerogels embedded in artificial opals. Enhancement of erbium-related 1.54 μm emission was observed from the structure Fe₂O₃ xerogel/porous anodic alumina fabricated on silicon, having some incompletely anodized aluminium, under excitation with either the lasing source at 532 nm or xenon lamp. Evident difference in PLE spectra for erbium doped TiO₂ and Fe₂O₃ xerogels in porous anodic alumina is observed.     

Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering

Highly orientated polycrystalline ZnO films were deposited on sapphire, silicon and quartz substrates at room temperature by r.f. magnetron sputtering. Different photoluminescence (PL) spectra were observed when excited with different wavelength light. A UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates, and only the 446 nm blue emission appeared for the films on glass substrates when the wavelength of the excitation light was 270 nm. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 488 and 516 nm, respectively. When the wavelength of the excitation light increased to 398 nm, the PL spectrum becomes a wide band that is consistent with three emission peaks.     

常用合成食品色素荧光光谱研究

分析合成食品色素的分子结构特点,根据荧光与分子结构的关系,理论上推断合成食品色素是荧光物质。应用SP-2558多功能光谱测量系统,测得胭脂红、苋菜红、柠檬黄、日落黄、亮蓝等五种最常用的合成食品色素标准溶液的三维荧光光谱。结果表明,胭脂红在波长330～430 nm的光激发下,产生较强荧光,荧光峰值波长为621 nm,最佳激发波长为376 nm;苋菜红在波长300～440 nm的光激发下,产生较强荧光,荧光峰值波长为643 nm,最佳激发波长为370 nm;柠檬黄在波长280～380 nm的光激发下,产生很强荧光,荧光峰值波长为565 nm,最佳激发波长为315 nm;日落黄在波长310～410 nm的光激发下,产生较强荧光,荧光峰值波长为592 nm,最佳激发波长为348 nm;亮蓝在波长320～390 nm的光激发下,产生较强荧光,荧光峰值波长为456 nm,最佳激发波长为350 nm。进而对这五种合成食品色素的荧光光谱进行了分析讨论。结果可为食品色素检测和食品安全提供帮助。     

铁钝化多孔硅的制备及光致发光机理研究

采用水热腐蚀法在相同环境下制备了不同晶型的铁钝化多孔硅样品。同一样品表面具有相似的孔隙结构,不同样品形貌存在差异。在300 nm光激发下,样品发光峰位于618 nm附近,半高宽约为132 nm。傅立叶红外变换光谱显示样品中有强的Si-Si、Si-O-Si、O_<em>y-Si-H_x化学键振动吸收。结果表明,水热腐蚀法制备的铁钝化多孔硅表面形貌与腐蚀过程的局域电极分布关系密切。样品的光致发光行为可归因于量子限制-发光中心作用,并受非桥氧空穴发光中心数量影响。     

绿光LED激发荧光的研究

介绍了绿光LED作为荧光激发光源的可行性。使用波长为 5 30nm的超高亮度绿光LED对荧光物质四氯四溴荧光素 (C2 0 H2 Br4 Cl4 Na2 O5)的荧光发射进行了研究。设计了小巧的荧光液池 ,将四个LED分别安置于液池侧面 ,聚光后的光束交汇于液池中同一位置以提高激发光的强度 ;使用 1kHz方波调制LED ,运用分光光度计方法 ,接收到波长为 5 70nm的荧光信号