| 电化学法制备的多孔硅发光 |
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| 引用本文： | 武少华,臧竞存.电化学法制备的多孔硅发光[J].光谱学与光谱分析,1995,15(2):113-118,127. |
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| 作者姓名： | 武少华 臧竞存 |
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| 作者单位： | 北京工业大学化学与环境工程系 |
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| 摘 要： | 在（１１１）晶向的ｎ型单晶硅片上，用电化学腐蚀的方法成功地制备出多孔硅膜，室温下，在３４４ｎｍ波长的光激发时用肉眼观察到明亮的桔红色荧光（５７７ｎｍ）研究了ＨＦ浓度，光照强度，电流密度和电化学腐蚀时间对多孔硅膜的发射波长和发光强度的影响，相应的多孔硅量子线度为１．５ｎｍ。
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| 关 键 词： | 多孔硅 荧光 腐蚀条件 量子尺寸 电化学法 |
LUMINESCENCE OF POROUS SILICON WAFERS FABRICATED BY ELECTROCHEMICAL METHOD |
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| WU Shaohua, ZANG Jingcun, HAN Yie, YANG Wei, GAO Xiuling, LIU Yanhang andYANG Jinghai.LUMINESCENCE OF POROUS SILICON WAFERS FABRICATED BY ELECTROCHEMICAL METHOD[J].Spectroscopy and Spectral Analysis,1995,15(2):113-118,127. |
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| Authors: | WU Shaohua ZANG Jingcun HAN Yie YANG Wei GAO Xiuling LIU Yanhang andYANG Jinghai |
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| Abstract: | A series of porous Si samples have been prepared successively by electro-chemical etching method on (111 ) n-type single crystal silicon.The orange-red luminescence (577urn) was observed with naked eyes under 344urn excitation at room temperature. The effects of HF concentration, light radiation,current density and electro-chemical etching time on emission wavelength and intensity of the porous St have been studied |
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| Keywords: | Porous silicon Luminescence Quantum line |
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