Surface and subsurface oxide formation on Ni(1 0 0) and Ni(1 1 1)

The oxidation of Ni(1 0 0) and Ni(1 1 1) at elevated temperatures and large oxygen exposures, typical of the methods used in the preparation of NiO(1 0 0) films for surface studies, has been investigated by medium energy ion scattering (MEIS) using 100 keV H⁺ incident ions. Oxide film growth proceeds significantly faster on Ni(1 1 1) than on Ni(1 0 0), but on both surfaces oxide penetration occurs to depths significantly greater than 100 Å with total exposures of 1200 and 6000 L respectively. The metal/oxide interface is extremely rough, with metallic Ni extending to the surface, even for much thicker oxide films on Ni(1 1 1). On Ni(1 1 1), NiO growth occurs with the (1 0 0) face parallel to the Ni(1 1 1) surface and the close-packed 〈1 1 0〉 directions parallel. On Ni(1 0 0) the MEIS blocking curves cannot be reconciled with a single orientation of NiO(1 0 0) (with the 〈1 1 0〉 directions parallel) on the surface, but is consistent with the substantial orientational disorder (including tilt) previously identified by spot-profile analysis LEED.     

Growth mode and electronic structure of Au nano-clusters on NiO(0 0 1) and TiO2(1 1 0)

The growth mode and electronic structure of Au nano-clusters grown on NiO and TiO₂ were analyzed by reflection high-energy electron diffraction, a field-emission type scanning electron microscope, medium energy ion scattering and photoelectron spectroscopy. Au was deposited on clean NiO(0 0 1)-1 × 1 and TiO₂(1 1 0)-1 × 1 surfaces at room temperature with a Knudsen cell at a rate of 0.25-0.35 ML/min (1 ML = 1.39 × 10¹⁵ atoms/cm²:Au(1 1 1)). Initially two-dimensional (2D) islands with thickness of one Au-atom layer grow epitaxially on NiO(0 0 1) and then neighboring 2D-islands link each other to form three-dimensional (3D)-islands with the c-axis oriented to the [1 1 1] direction. The critical size to form 3D-islands is estimated to be about 5 nm². The shape of the 3D-islands is well approximated by a partial sphere with a diameter d and height h ranging from 2.0 to 11.8 nm and from 0.95 to 4.2 nm, respectively for Au coverage from 0.13 to 4.6 ML. The valence band spectra show that the Au/NiO and Au/TiO₂ surfaces have metallic characters for Au coverage above 0.9 ML. We observed Au 4f spectra and found no binding energy shift for Au/NiO but significant higher binding energy shifts for Au/TiO₂ due to an electron charge transfer from Au to TiO₂. The work function of Au/NiO(0 0 1) gradually increases with increase in Au coverage from 4.4 eV (NiO(0 0 1)) to 5.36 eV (Au(1 1 1)). In contrast, a small Au deposition(0.15 to 1.5 ML) on TiO₂(1 1 0) leads to reduction of the work function, which is correlated with an electron charge transfer from Au to TiO₂ substrate.     

Epitaxial growth of ultra-thin NiO films on Cu(1 1 1)

The very first stages of the growth of NiO on Cu(1 1 1) is examined on a microscopic scale. The paper focuses on the morphological and structural characterization of nanostructures formed in the 0-1 Å thickness range. Ultra-thin NiO films, obtained through evaporation of a Ni rod under an oxygen atmosphere were grown at 550 K. In the early stages of the growth the oxide film morphology shows 10-30 nm large, monolayer high, islands with a partial incorporation of metallic Ni in the first Cu(1 1 1) surface plane. The first layer is formed by an epitaxial atomic layer exhibiting a STM contrast similar to the one observed on adsorbed oxygen on Cu(1 1 0). A NiO cluster nucleation and coalescence mechanism is proposed in order to explain the formation of the second NiO layer. A α-Ni₂O₃ hexagonal phase, or a structural distortion of the NiO(1 1 1)()R30° structure could both explain the complex LEED patterns.     

First-principles study on exchange force image of NiO(0 0 1) surface using a ferromagnetic Fe probe

Exchange force of a ferromagnetic Fe probe on antiferromagnetic NiO(0 0 1) surface has been investigated by means of a first-principles calculation. Calculated exchange force images show a clear spin image when the probe is located within 1 Å above the contact point. We can see antiferromagnetic pattern of the surface Ni atoms along the [1 1 0] direction, and asymmetric feature around surface O sites. The main contrast of Ni comes from the direct exchange interaction between the Fe probe and the surface Ni atom, while the asymmetric image possibly comes from the super exchange interaction between the Fe probe and the second layer Ni atom via the surface O. Such asymmetric feature is a key proof of the exchange force microscope image on observation.     

Small Cu-clusters on ZnO(0 0 0 1)-Zn: Nucleation and annealing behavior

The formation of (1 1 1)-oriented Cu-clusters on ZnO(0 0 0 1)-Zn at room temperature is followed by in situ applied scanning tunneling microscopy. Kink-sites at step edges and especially the apexes of triangular ZnO-substrate terraces act as preferred nucleation sites. At room temperature the decay of small Cu-islands takes place on a time scale of minutes. Larger Cu-coverages lead to an ensemble of interconnected 3D-islands of uniform height separated by trenches down to the substrate. A disordered dislocation network is visible on top of the Cu-islands. Annealing leads to a piling up of the Cu-islands. An initially undisturbed ZnO-substrate in between the islands shows that there is no strong reaction between the Cu-clusters and the oxide at room temperature. A strong decrease of the adlayer coverage visible above the ZnO-substrate layer for annealing temperature above 570 K points to a partial entrenching of the islands into the oxide support and an alloy formation.     

Ultrathin nickel oxide films grown on Ag(0 0 1): a study by XPS, LEIS and LEED intensity analysis

The structure of a nickel oxide film 2 ML thick has been investigated by LEED intensity analysis. The NiO film was prepared by evaporating Ni in presence of O₂ at a pressure in the 10⁻⁶ mbar range. The growth of the oxide film was followed by XPS, LEIS and LEED. In the early stages of deposition, the film shows a (2 × 1) superstructure in LEED. After deposition of 2 ML of NiO, a sharp (1 × 1) LEED pattern is observed. The intensity versus electron energy curves of the LEED spots were measured for this NiO(1 × 1) film and analysed by means of the tensor LEED method. A good level of agreement of the experimental LEED intensities with those calculated for a pseudomorphic NiO(0 0 1) film was obtained. We found that oxygen atoms at the oxide-substrate interface are on-top silver atoms. The interlayer distance in the oxide does not differ significantly from that in bulk NiO(0 0 1), within the accuracy of the analysis. An outward displacement (0.05 ± 0.05 Å) of oxygen atoms with respect to nickel atoms was found at the oxide film surface. The interlayer distance at the silver-nickel oxide interface is 2.43 ± 0.05 Å.     

Why the case for clean surfaces does not hold water: Structure and morphology of hydroxylated nickel oxide (1 1 1)

We report an experimental and theoretical analysis of the √3 × √3-R30° and 2 × 2 reconstructions on the NiO (1 1 1) surface combining transmission electron microscopy, X-ray photoelectron spectroscopy, and reasonably accurate density functional calculations using the meta-GGA hybrid functional TPSSh. While the main focus here is on the surface structure, we also observe an unusual step morphology with terraces containing only even numbers of unit cells during annealing of the surfaces. The experimental data clearly shows that the surfaces contain significant coverage of hydroxyl terminations, and the surface structures are essentially the same as those reported on the MgO (1 1 1) surface implying an identical kinetically-limited water-driven structural transition pathway. The octapole structure can therefore be all but ruled out for single crystals of NiO annealed in or transported through humid air. The theoretical analysis indicates, as expected, that simple density functional theory methods for such strongly-correlated oxide surfaces are marginal, while better consideration of the metal d-electrons has a large effect although it is still not perfect.     

Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection

Native oxide removal on GaAs(0 0 1) wafers under conventional thermal desorption causes severe surface degradation in the form of pitting. Typical surface regeneration requires several hundred nanometres of buffer layer growth. This level of planarization is necessary to fill in the deep pits since Ehrlich-Schwoebel diffusion barriers cause a retardation of layer growth at multiple monolayer step edges. Pits are, however, attractive nucleation sites for quantum dots (QDs), and hence QDs fill the pits via a self-governing phenomenon. In this paper, we show how 1.7 ML of InAs growth on GaAs(0 0 1) immediately after thermal oxide removal aids the healing of the surface and reduces the necessity for thick buffer layer growth.     

Epitaxial growth of cobalt clusters on the bare and the oxide film grown on NiAl(1 0 0) surfaces

The structure of the nano-sized cobalt clusters on bare NiAl(1 0 0) and an oxidized NiAl(1 0 0) surfaces have been investigated by AES, LEED and RHEED. The deposition of Co onto bare NiAl(1 0 0) at room temperature led to small crystalline Co grains and surface asperities of substrate. The latter is likely induced by replacement of surface Al, Ni atoms by Co deposit. At 800 K Co particles aggregate to form clusters, but incorporation of Co into bulk NiAl(1 0 0) could occur upon annealing at 900 K. On the other hand, pure face-centered cubic (fcc) phase of Co crystallites of ≈1 nm in diameter with inclusion of smaller-sized particles (D < 1 nm) are observed on Θ-Al₂O₃ after Co deposition at room temperature. After annealing the Co nano-clusters grow larger at expense of small particles (D ≈ 3 nm), where the [1 1 0] and [−1 1 0] axis of the Co(0 0 1) facets are parallel to the [1 0 0] and [0 1 0] directions of (0 0 1)oxide, respectively. The in-plane lattice constant of Co clusters is ca. 4% larger than that of bulk Co, yielding less strain at the Co/oxide interface. A 15° ± 10% random orientation of the normal to (0 0 1) facet of Co clusters with respect to (0 0 1)oxide surface was deduced from the “arc”-shape reflection spots in RHEED. These results suggest that both orientation and phase of Co clusters are strongly affected by the nature and structure of oxide surface.     

Buffer layer free large area bi-layer graphene on SiC(0 0 0 1)

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0 0 0 1) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (μ-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0 0 0 1). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 °C. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage.     

Novel mesoscale defect structure on NiO(1 0 0) surfaces by atomic force microscopy

Cleaved NiO(1 0 0) surfaces were imaged with atomic force microscopy (AFM) to determine defect concentrations and morphology. Random 〈0 1 0〉 and 〈0 0 1〉 oriented steps, which have been previously characterized, were the most common defect observed on the cleaved surface and formed with step heights in multiples of 2.1 Å, the Ni-O nearest-neighbor distance, and terrace widths in the range of 25-100 nm. In addition, the surface showed novel mesoscale (∼0.5-2 μm) square pyramidal defects with the pyramid base oriented along 〈1 0 0〉 symmetry related directions. Upon etching, the pyramidal defects converted to more stable cubic pits, consistent with (1 0 0) symmetry related walls. The square pyramidal pits tended to cluster or to form along step edges, where the weakened structure is more susceptible to surface deformations. Also, a small concentration of square pyramidal pits, oriented with the base of the pyramid along 〈0 1 1〉, was observed on the cleaved NiO surfaces. For comparison purposes, chemical mechanical polished (CMP) NiO(1 0 0) substrates were imaged with AFM. Defect concentrations were of comparable levels to the cleaved surface, but showed a different distribution of defect types. Long-ranged stepped defects were much less common on CMP substrates, and the predominant defects observed were cubic pits with sidewalls steeper than could be accurately measured by the AFM tip. These defects were similar in size and structure to those observed on cleaved NiO(1 0 0) surfaces that had been acid etched, although pit clustering was more pronounced for the CMP surfaces.     

Initial growth of platinum on oxygen-covered Ni(1 1 0) surfaces

The initial growth of Pt on the Ni(1 1 0)-(3 × 1)-O and NiO(1 1 0) surfaces has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS), low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). Prior to Pt deposition, the atomic structure of the near-surface regions of the Ni(1 1 0)-(3 × 1)-O and NiO(1 1 0) structures were studied using CAICISS, finding changes to the interlayer spacings due to the adsorption of oxygen. Deposition of Pt on the Ni(1 1 0)-(3 × 1)-O surface led to a random substitutional alloy in the near-surface region at Pt coverages both below and in excess of 1 ML. In contrast, when the surface was treated with 1800 L of atomic oxygen in order to form a NiO(1 1 0) surface, a thin Pt layer was formed upon room temperature Pt deposition. XPS and LEED data are presented throughout to support the CAICISS observations.     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

Ultra-thin film growth of titanium dioxide on W(1 0 0)

We have employed low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy to follow the epitaxial growth of thin films of TiO₂ on W(1 0 0). The films were grown both by metal vapour deposition of titanium onto the substrate in UHV with subsequent annealing in a low partial pressure of oxygen, and by metal vapour deposition in a low partial pressure of oxygen. LEED patterns showed the characteristic patterns of (1 1 0) oriented rutile. A systematic spot splitting was observed and attributed to a stepped surface. The calculated step height was found to be in good agreement with that expected for rutile TiO₂(1 1 0), 3.3 Å. Titanium core level shifts were used to identify oxidation states as a function of film thickness allowing the interpretation in terms of a slightly sub-stoichiometric interface layer in contact with the substrate. In combination with the LEED patterns, the film structure is therefore determined to be (1 1 0) oriented rutile with a comparable level of stoichiometry to UHV prepared bulk crystals. The ordered step structure indicates considerable structural complexity of the surface.     

The orbital interaction of adsorbed CO on NiO (0 0 1;1 1 1) surface: A periodic density functional theory study

The DOS structures of NiO (0 0 1;1 1 1) surfaces and CO adsorption on these surfaces have been studied with spin-unrestricted and periodic DFT (B3LYP) methods. On the basis of the analysis of orbital interaction on DOSs, the bonding properties of surface atomic orbitals have also been interpreted. It is found that CO adsorption on (0 0 1) and (1 1 1) surfaces have different mechanisms and adsorption energies. A four-electron σ orbital interaction is produced when CO is adsorbed on NiO (1 1 1), CO adsorbption on NiO (1 1 1) surface is obviously stronger than that on surface (0 0 1). It is easy for the clean NiO (1 1 1) surface to reconstruct to (2 × 2) structure, but the surface covered by CO does not undergo such a reconstruction.     

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.     

Atomic geometry determination of FeO(0 0 1) grown on Ag(0 0 1) by low energy electron diffraction

A low energy electron diffraction (LEED) investigation of the structure of the surface of an FeO(0 0 1) thin film grown on Ag(0 0 1) is presented. The results show that this surface has an almost bulk termination structure with a very small rumple on the first layer, which agrees with the structure found in other studies carried out on the (0 0 1) surface of oxides that have rock-salt structure. Evidences that may support a linear behaviour of the topmost layer rumple with the oxide lattice constant are also discussed.     

FeO(1 1 1) formation by exposure of Fe(1 1 0) to atomic and molecular oxygen

The growth, structure, and morphology of ultrathin iron oxide layers formed on a Fe(1 1 0) single crystal surface are investigated by Auger electron spectroscopy, low energy electron diffraction, and grazing ion scattering. For Fe oxidation by atomic instead of molecular oxygen, the gas exposure can be reduced by almost two orders of magnitude because surface sticking and dissociation are not limiting the growth process. A well-ordered FeO(1 1 1) film with low defect density is only obtained with atomic oxygen. Compared to the bulk, the FeO lattice is laterally compressed by about 5-6% resulting in an in-plane oxygen (Fe) nearest-neighbor distance of 2.87 Å. Independent of the preparation method, long-range structural order is poor if the oxide film thickness is increased to 3-5 layers. This is attributed to the relatively large lattice mismatch between FeO(1 1 1) and Fe(1 1 0).     

Initial stages of hydroxide formation and its reduction on Co(0 0 0 1) studied by in situ STM and XPS in 0.1 M NaOH

In situ electrochemical scanning tunneling microscopy (STM) has been applied to study the initial stages of hydroxide formation and its reduction on Co(0 0 0 1) in 0.1 M NaOH. XPS investigations give chemical information about the adlayer composition after oxidation and at the different reduction stages. In the subpotential range of oxidation at E<−0.55 V (SHE) the formation of a Co(OH)₂(0 0 0 1) superstructure is observed. It shows a hexagonal symmetry with an average periodicity of P=1.25±0.20 nm. The coincidence cell of the observed structure consists of 16 unit cells Co(OH)₂(0 0 0 1) showing an average lattice parameter of a=0.33±0.05 nm and thus the Co(OH)₂ monolayer forms a 5 × 5 superstructure with respect to the underlying metallic Co(0 0 0 1) substrate. XPS results clearly prove the presence of hydroxide and exclude the formation of CoO in the subpotential range.At the very beginning of the reduction process small two-dimensional metal clusters and islands can be observed. It is assumed that they are crystallization nuclei for metal formation. They enlarge and grow together with other islands or larger terraces. During this reduction process two-dimensional adatomic arrays consisting of OH⁻-Co²⁺- OH⁻ trimers appear on the surface. Some of these trimers accumulate at step edges, and finally decorate them. This decoration builds up an energy barrier for further metal incorporation and prevents further growth of the terraces with remaining metal clusters on their surfaces. The reduction of the Co(OH)₂ layer is found to be not completed which is confirmed by XPS results.