Low Energy Ion Channelling in Single-Wall Nanotubes

Monte Carlo simulation is used to study the low energy He ion channelling in a （17, 0） single-wall nanotube and its rope. The simulation shows that the channelling critical angle ψc = 48E^-1/2 （E is incident energy） for a 1.31-nm-diameter initial beam into the nanotube, while ψc = 45E^-1/2 for the 1.31-nm-diameter initial beam into its rope.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Additive Temporal Coloured Noise Induced Eckhaus Instability in Complex Ginzburg-Landau Equation System

The effect of additive coloured noises, which are correlated in time, on one-dimensional travelling waves in the complex Ginzburg-Landau equation is studied by numerical simulations. We found that a small coloured noise with temporal correlation could considerably influence the stability of one-dimensional wave trains. There exists an optimal temporal correlation of noise where travelling waves are the most vulnerable. To elucidate the phenomena, we statistically calculated the convective velocities Vg of the wave packets, and found that the coloured noise with an appropriate temporal correlation can decrease Vg, making the system convectively more unstable.     

Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

Excited-State Dynamics of a Novel Bisimide-C60 Complex

The excited-state dynamics of a bisimide derivative (ZI) and a novel Z1-C60 complex (PSF) has been investigated by means of steady state optical spectroscopies and femtosecond time-resolved absorption spectroscopies. The lifetime of the singlet excited state of Z1 shortens drastically from 2.4 ns to 1.7ps upon going from Z1 to PSF, a significant kinetics change is in coincidence with the complete fluorescence quench caused by the C^60 attachment.Highly efficient Zl-to-C60 excitation energy transfer which is governed by the mechanism of Z1-C60 electron exchange has been verified for the PSF complex.     

Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors

The electronic and magnetic properties as well as the spatial charge distribution of single Mn impurity in III--V diluted magnetic semiconductors are obtained when the degeneracy of the p orbits contributed from the four nearest-neighbouring As(N) atoms is taken into account. We show that in the ground state, the Mn spin is strongly antiferromagnetically coupled to the surrounding As(N) atoms when the p-d hybridization V_pd is large and both the hole level E_v and the impurity level E_d are close to the Fermi energy. The spatial charge distribution of the Mn acceptor in the (110) plane is non-spherically symmetric, in good agreement with the recent STM images.     

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.     

Ground State Property of LiV2O4

The spinel structure LiV2O4 is studied by local density approximation （LDA） as well as including strong correlation correction potential, i.e. the LDA＋U scheme, which concerns the strongly correlated interaction. With LDA, the orbitals of V 3d and O 2p are well separated so that it presents purely metallic heavv fermion behaviour. The total energy of ferromagnetic phase is slightly lower than that of paramagnetic phase within the LDA ap- proach. This implies that the ferromagnetic instability as a consequence of spin frustrated magnetism can be observed in experiments. The strong correlation interaction by using LDA＋U enhances the exchange splitting. The heavy-fermion feature can be derived from the sharp peak around the Fermi level from the density of states.     

Photocatalytic Properties of TiO2/Si-NPA Nano Composite Systems

A new composite system is fabricated by depositing the TiO2 film on a silicon nanoporous pillar array （Si-NPA） and annealing at 500℃ using the spin coating method. Such a composite system exhibits a uniform morphology with the micron-dimension pillar array. Photocatalytic properties are investigated based on the degradation of methyl orange dye solution, and the results show that the photocatalytic efficiency of such a nano-composite system is 1.7 times that of the TiO2/glass system. The enhancement of photocatalytic efficiency is attributed to the large surface area of the TiO2/Si-NPA system.     

Networked analysis of the Shanghai subway network,in China

Recently, cities have become larger and larger, and more and more people are living in large cities. This phenomenon has caused serious traffic congestion which is very detrimental to the development of large cities. In this context, the subway has become the most effective solution for relieving traffic congestion and subways have been constructed in many cities, so the reliability and robustness of subways should be guaranteed. In this paper, Shanghai subway network, in China, will be analyzed and investigated; the topological characteristics and functional properties can be studied in order to assess the reliability and robustness. The topological characteristics can be measured using several parameters; meanwhile the fraction of removed nodes of Shanghai subway network is discussed and compared against that for a random network, and the critical threshold of this fraction is obtained. Two novel parameters called the functionality loss and connectivity of subway lines are proposed for measuring the transport functionality and the connectivity of subway lines. Subway lines 4 and 7 are selected as examples for evaluating the connectivity of lines subjected to different attack protocols. This study indicates that the subway network is robust against random attacks but fragile for malicious attacks, and the highest betweenness node-based attacks can cause the most serious damage to subway networks among the different attack protocols.     

Economic small-world behavior in weighted networks

The small-world phenomenon has been already the subject of a huge variety of papers, showing its appeareance in a variety of systems. However, some big holes still remain to be filled, as the commonly adopted mathematical formulation is valid only for topological networks. In this paper we propose a generalization of the theory of small worlds based on two leading concepts, efficiency and cost, and valid also for weighted networks. Efficiency measures how well information propagates over the network, and cost measures how expensive it is to build a network. The combination of these factors leads us to introduce the concept of economic small worlds, that formalizes the idea of networks that are “cheap” to build, and nevertheless efficient in propagating information, both at global and local scale. In this way we provide an adequate tool to quantitatively analyze the behaviour of complex networks in the real world. Various complex systems are studied, ranging from the realm of neural networks, to social sciences, to communication and transportation networks. In each case, economic small worlds are found. Moreover, using the economic small-world framework, the construction principles of these networks can be quantitatively analyzed and compared, giving good insights on how efficiency and economy principles combine up to shape all these systems. Received 6 November 2002 / Received in final form 24 January 2003 Published online 1st April 2003 RID="a" ID="a"e-mail: latora@ct.infn.it     

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A novel lateral double-gate tunnelling field effect transistor （DG-TFET） is studied and its performance is presented by a two-dimensional device simulation with code ISE. The result demonstrates that this new tunnelling transistor allows for the steeper sub-threshold swing below 60mV/dec, the super low supply voltage （operable at VDD 〈 0.3 V） and the rail-to-rail logic （significant on-state current at the drain-source voltage VDS = 50mV） for the aggressive technology assumptions of the availability of high-k/metal stack with equivalent gate oxide thickness EOT =0.24 nm and the work function difference 4.5 eV of materials.     

Structural and Dynamic Properties of Amorphous Silicon： Tight-Binding Molecular Dynamics Simulation

The tight-binding molecular dynamics simulation has been performed to study structural and dynamical properties of amorphous silicon. It is found that the radial distribution function and static structure factor are in good agreement with the experimental measurements. The bond order parameters Q1 are sensitive to the structure change at different quenching rates. For the dynamical properties, we have calculated the vibration and electronic density of states. The simulation results show that the transverse acoustic is in good agreement with the experimental data, and the high frequency transverse optical (TO) peak shifts to the right of the experimental TO peak.     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films

In₂S₃ nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O₂ flow. This process allows the transformation of nanocrystal In₂O₃ films from In₂S₃ films and the reaction completes at 600°C. These results indicate that the In₂O₃ film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

High Efficient C6H12 Raman Laser Enhanced by DCM Fluorescence

We report the first-order Stokes output （wavelength of 627.6 nm） from C6H12 enhanced by DCM dye fluorescence with high energy conversion efficiency of 47.9%, quantum conversion efficiency of 56.5%. To our knowledge, it is the highest conversion efficiency of stimulated Raman scattering obtained from liquid Raman laser. A 532nm frequency doubled Nd：YAG laser with 8 Hz repetition rate is employed as the pump source, and the enhancement medium is DCM dye solution in ethanol. The conversion efficiencies at various pump energies and various pump repetition rates are measured and analysed. The enhancement mechanism of SRS together with its potential application is discussed.     

In-Situ Alignment of MnBi Crystals Induced by High Magnetic Field above Curie Temperature

Above Curie temperature, MnBi crystals are aligned in situ along the c-axis in a Bi matrix by a high fabrication magnetic field H f of 10 T. Magnetic testing shows a pronounced anisotropy in magnetization in directions normal and parallel to the fabrication field, resulting from the alignment. The successful alignment m v result from the fact that the easy magnetization direction is along the c-axis of MnBi and the high fabrication field of 10 T is large enough to rotate the ）MnBi crystal to this direction even though the temperature is above the Curie temperature.