Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon

Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial–parallel capacitance structure. Agreement between modeling predictions and measurement has been realized, which turns out an effective method that enables us to estimate the extent of surface oxidation of a specimen by measuring the porosity dependent dielectric response of the chemically passivated PS, and provides guidelines that could be useful for designing dielectric porous structures with surface oxidation.     

PBG properties of three-component 2D photonic crystals

In this paper we analyze theoretically how the introduction of the third component into the two-dimensional photonic crystal influences the photonic band structure and the density-of-states of the system. We consider the periodic array of cylindrical air rods in a dielectric, and the third medium is introduced as a ring-shaped intermediate layer of thickness d and dielectric constant _i between the air pores and the dielectric background. Using the plane wave method, we have obtained the band structures for the 2D triangular lattice photonic crystals. The dependencies of TE and TM band gaps’ widths and gaps’ edges position on the interlayer dielectric constant and interlayer thickness were analyzed. In the framework of this approach, we have estimated the influence of the surface oxide layer on the band structure of macroporous silicon. We observed the shift of the gaps’ edges to the higher or lower frequencies, depending on the interlayer thickness and dielectric constant. We have shown that the existence of a native oxide surface layer should be taken into consideration to understand the optical properties of 2D photonic crystals, particularly in macroporous silicon structures.     

n型有序多孔硅基氧化钨室温气敏性能研究

利用电化学腐蚀方法制备了n型有序多孔硅, 并以此为基底用直流磁控溅射法在其表面溅射不同厚度的氧化钨薄膜. 利用X射线和扫描电子显微镜表征了材料的成分和结构, 结果表明, 多孔硅的孔呈柱形有序分布, 溅射10 min的WO₃薄膜是多晶结构, 比较松散地覆盖在整个多孔硅的表面. 分别测试了多孔硅和多孔硅基氧化钨在室温条件下对二氧化氮的气敏性能, 结果表明, 相对于多孔硅, 多孔硅基氧化钨薄膜对二氧化氮的气敏性能显著提高. 对多孔硅基氧化钨复合结构的气敏机理分析认为, 多孔硅和氧化钨薄膜复合形成的异质结对良好的气敏性能起到主要作用, 氧化钨薄膜表面出现了反型层引起了气敏响应时电阻的异常变化. 关键词： 有序多孔硅 氧化钨薄膜 二氧化氮 室温气敏性能     

Ellipsometric studies of porous silicon

Multiple-angle-of-incidence (MAI) ellipsometry at 632.8 nm is used to characterize P and P⁺ porous silicon of high porosity. Complex dielectric constants are obtained, from which the porosity can be estimated qualitatively. The properties of the imaginary part of the dielectric constants are studied and the possible causes are discussed. Two dielectric constants, perpendicular and parallel to the interface, respectively, are measured based on a semi-infinite anisotropic model. Ellipsometric studies demonstrate a larger difference between the two dielectric constants in P⁺ porous silicon, but both P and P⁺ samples only show weak anisotropy, i.e., a network-like structure, which tends towards isotropy, is more suitable for porous silicon than a column-like one, which shows strong anisotropy.     

Chemical modification of porous and corrugated silicon surfaces in polyacrylic acid solutions

The chemical modification of porous silicon (PS) surfaces makes it possible to eliminate weak silicon-hydrogen bonds and prevent the formation of Si-O and Si-OH groups deep in pores and on a corrugated silicon surface. Hence, the effect of PS aging is not observed during its storage in air, and the porous layer??s composition is stable. Surfaces have been modified in polyacrylic acid solutions. The surface composition is analyzed on the basis of X-ray absorption spectra, and the morphology is investigated via scanning electron microscopy. It has been ascertained that the composition and morphology of a surface treated in polyacrylic acid solutions depend on the PS preparation method.     

多孔硅光致发光峰半峰全宽的压缩

硅发光对于在单一硅片上实现光电集成是至关重要的.目前已有的使硅产生发光的方法有:掺杂深能级杂质、掺稀土离子、多孔硅、纳米硅以及Si/SiO₂超晶格.声空化所引发的特殊的物理、化学环境为制备光致发光多孔硅薄膜提供了一条重要的途径.实验表明,声化学处理对于改善多孔硅的微结构,提高发光效率和发光稳定性都是一项非常有效的技术.超声波加强阳极电化学腐蚀制备发光多孔硅薄膜,比目前通用的常规方法制备的样品显示出更优良的性质.这种超声波的化学效应源于声空化,即腐蚀液中气泡的形成、生长和急剧崩溃.在多孔硅的腐蚀过程中,由于超声波的作用增加了孔中氢气泡的逸出比率和塌缩,有利于孔沿垂直方向的腐蚀,使多孔硅光致发光峰的半峰全宽压缩到了3.8nm.     

Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy

We present a systematic study on ultrathin porous silicon (PS) layers (40–120 nm) of different porosities, formed by electrochemical etching and followed by thermal oxidation treatment (300°C and 600°C) and by electrochemical oxidation. The oxidised and non-oxidised PS layers have been analysed by spectroscopic reflectometry (SR), spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS). The SR and SE spectra were fitted by a multiparameter fit program and the composition and the thickness of the PS layers were evaluated by different optical models. PS layers, formed electrochemically in the outermost layer of a p/n⁺ monocrystalline silicon junction were successfully evaluated using a gradient porosity optical model. The non-oxidised PS, formed in p-type silicon, can be well described by a simple optical model (one-layer of two-components, silicon and voids). The spectra of the oxidised PS layers can be fitted better using an optical model with three interdependent components (crystalline-silicon, silicon-dioxide, voids). The SIMS results give a strong support for the optical model used for SR and SE.     

Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity.     

Current-voltage characteristics of structures with a porous silicon layer at adsorption of carbon monoxide

The current-voltage characteristics of structures with a layer of porous silicon of 73% porosity were measured at adsorption of gas (carbon monoxide) at room temperature. Estimations are performed of the height of potential heterobarrier at the interface between porous silicon and p ⁺-type single-crystal silicon, of the perfectness factor and the resistance of a layer of porous silicon in air, in air with 0.4% CO, and in air with 2% CO. Physical causes explaining the experimental data are discussed.     

Nanotubes of piezoelectric BNT–BT0.08 obtained from sol–gel precursor

The results of investigations of porous glasses (PG) and porous glasses–ammonium hydrogen sulfate ferroelectric nanocomposites (AHS–PG) are presented. On the basis of dielectric and calorimetric measurements it was shown that in the AHS–PG nanocomposites with average pore size of 44, 68, 95, and 320 nm the anomalies of dielectric permittivity and specific heat similar to those in bulk crystals AHS are observed. An influence of the mean value of pores sizes on the ferroelectric phase transition temperatures of AHS nanocrystals embedded into the porous matrices was determined. It was shown that in AHS–PG dispersion of the dielectric permittivity is observed in both para- and ferro-electric phases and above room temperature AHS–PG nanocomposites exhibit the ionic conductivity.     

Features of atomic and electronic structure of oxides on porous silicon surface according to XANES data

Based on synchrotron research of the fine structure main parameters of SiL _{2, 3} X-ray absorption edges (X-ray absorption near edge structure (XANES)) in porous silicon on boron-doped Si(100) wafers, the thickness of the surface oxide layer and the degree of distortions of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the oxide layer formed on the amorphous layer coating nanocrystals of porous silicon exceeds the thickness of the native oxide on the surface of Si(100) : P and Si(100) : B single-crystal (100) silicon wafers by several times. Distortion of the silicon-oxygen tetrahedron, i.e., the basic unit of silicon oxide, is accompanied by Si-O bond stretching and an increase in the angle between Si-O-Si bonds.     

Current–voltage and low-frequency noise characteristics of structures with porous silicon layers exposed to different gases

Current–voltage and noise characteristics of porous silicon (PS)/single crystalline silicon (SCS) samples were measured under exposure to dry air, air +0.4% CO, dry air +1.7% CO, and dry air+ethyl alcohol vapor. The samples have a sandwich structure comprising Al/PS/SCS/Al. For the dry air +CO mixtures, the noise level was sensitive not only to the presence of CO but also to its percentage, and an increase of the CO concentration led to a change in the spectral density function of the low-frequency noise.     

New optical features to enhance solar cell performance based on porous silicon surfaces

Electrochemical etching is used to fabricate porous silicon (PS) surfaces for both sides of the Si wafer. The effect of PS on performance of Si solar cells is investigated and the reflected mirrors are manipulated to enhance solar cell efficiency. The process is promising for solar cell manufacturing due to its simplicity, lower cost and suitability for mass production. The PS surface has discrete pores and short-branched pores on the polished wafer side. In contrast, the etched backside of the wafer has smaller pore size, with random pores. PS formed on both sides has lower reflectivity value compared with results in other works. Solar cell efficiency is increased to 15.4% with PS formed on both sides compared with the unetched sample and other results. Using empirical models, the optical properties of the refractive index and the optical dielectric constant are investigated. The porous surface texturing properties could enhance and increase the conversion efficiency of porous Si solar cells. The obtained results are in agreement with experimental and other data.     

Electrochemical formation of porous superlattices on n-type (1 0 0) InP

The present work deals with the electrochemical formation of superlattice structures on n-type (1 0 0) InP in HCl solutions. The superlattices consist of a stack of two layers with alternating high and low porosity on n-type material obtained by changing the anodizing current or the potential periodically in HCl solutions. The superlattice structures were characterized by scanning electron microscopy. The pore morphology and structure depend strongly on the electrochemical conditions. For anodization with low currents (e.g., 1 or 10 mA) or at low potentials (e.g., 1.5 V_Ag/AgCl), a porous layer with a facet-like structure was formed. For higher currents or potentials, such as 50 or 100 mA or 3 V_Ag/AgCl, respectively, a tree-like structure with random and/or tangled branches was observed. Finally, samples anodized at 5 V_Ag/AgCl, show a porous layer with a regular array of straight pores. The morphology and structure of the stacks of the porous layers can be controlled in the nanometer range, depending on the electrochemical conditions.     

SERS-active substrates based on n-type porous silicon

Porous silicon (PS) prepared from n-type Si crystal is proposed as a new material for the fabrication of sensitive substrates for surface-enhanced Raman scattering (SERS). The formation procedure for nanostructured silver films on the surface of PS was optimized. Maximum of SERS enhancement for rhodamine 6G probing molecule is observed for samples obtained by the immersion plating from the water solution of AgNO₃ with the 10 mM concentration during 5 min. The dependence of morphological parameters of PS and corresponding silvered surfaces on the anodization current density has been studied. It is shown that the most SERS activities possess substrates produced from PS with lower porosity. The optimum of the PS layer thickness for high Raman signal is about 5 μm. The detection limit for rhodamine 6G adsorbed on Ag-coated PS from the 100 pM solution is established to be comparable with that for p-type PS-based substrates. Thus, the n-type porous silicon is suitable material for the preparation of sensitive SERS-active substrates.     

Low-porosity porous silicon nanostructures on monocrystalline silicon solar cells

In this work we present a study of low-porosity porous silicon (PS) nanostructures stain etched on monocrystalline silicon solar cells. The PS layers reduce the reflectance, improve the diffusion of dopants by rapid thermal processes, and increase the homogeneity of the sheet resistance. Some samples were subjected to chemical oxidation in HNO₃ to reduce the porosity of the surface layer. After the diffusion process, deposition of a SiN_x antireflection layer, and screen printing of the samples, an efficiency of 15.5% is obtained for low-porosity PS solar cells, compared with an efficiency of 10.0% for standard PS cells and 14.9% for the reference Cz cells.     

Electrodynamic properties of nanoporous silicon in the range from terahertz to infrared frequencies

The dielectric response (conductivity and permittivity) spectra of a series of nanoporous silicon samples prepared by anodization of low-resistivity single-crystal silicon are measured, for the first time, using terahertz and IR spectroscopy in the frequency range 7–4000 cm^?1 at room temperature. The spectra obtained are analyzed in terms of the effective medium theory with a size-dependent dielectric response function of nanoinclusions and averaged dielectric characteristics of the surrounding medium. The geometric and dielectric characteristics of silicon nanoinclusions are determined. The dielectric properties of inclusions are found to be affected by nanosize effects, namely, carrier scattering at crystallite boundaries and a broadening of the band gap due to quantum confinement. The spectra of the samples prepared by adding iodine to the electrolyte exhibit a resonance at frequencies of 150–300 cm^?1. The nature of the resonance can be associated with the presence of chemisorbed iodine on the surface of porous silicon. Possible mechanisms responsible for the changes in broadband conductivity and permittivity spectra of single-crystal silicon upon transformation into a nanoporous structure are discussed.     

Optical properties of multilayered Period-Doubling and Rudin-Shapiro porous silicon dielectric heterostructures

To investigate the optical properties in quasi-regular porous-silicon-based dielectric Period-Doubling and Rudin-Shapiro multilayer systems, we study here the reflection of light from these structures. The Period-Doubling and Rudin-Shapiro structures are fabricated in such a way that the optical thickness of each layer is one quarter of 600 and 640 nm respectively. We find that porous silicon Period-Doubling dielectric multilayers could demonstrate the optical properties similar to the classical periodic Febry–Perot interference filters with one or multiple resonant peaks, but with an advantage of having total optical thickness much lesser than the periodic structures. Additionally, light propagation in porous silicon Rudin-Shapiro structures is investigated for the first time, both theoretically and experimentally. The reflectance spectra of the structures exhibit photonic band gaps centered at predetermined wavelengths. In both cases, numerical simulation of light transmission is performed using transfer matrix method.     

The light-enhanced NO2 sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.     

Study of the microporosity in nanoporous carbon films by small-angle X-ray scattering

The structural difference in the microporous structures of nanoporous carbon films is revealed by small-angle X-ray scattering; it consists in a higher porosity of the layers formed from the titanium carbide. The pore shape is shown to be equiaxed. Pores 20 Å in diameter mainly contribute to the porosity of the nanoporous carbon films. The characteristics of the porous structure of the nanoporous carbon layers synthesized from the titanium or silicon carbide are found using small-angle X-ray scattering. The porous structure is shown to consist of two size fractions of equiaxed pores 10 and 40 Å in radius. The porosity of the films is mainly contributed by the pores of the small size fraction; their fraction is 46 or 10% for the layers synthesized from the titanium or silicon carbide, respectively.