氢负离子在电介质球面附近的光剥离研究

利用镜像法结合半经典闭合轨道理论,对氢负离子在电介质球面附近的光剥离进行了研究.首先利用镜像法分析了剥离电子在电介质球内的镜像电荷分布情况,然后给出了体系的哈密顿量.通过求解哈密顿正则方程,找到了剥离电子在电介质球面附近运动时的闭合轨道.借助于半经典闭合轨道理论,推导出了体系的光剥离截面,并且对光剥离截面进行了计算和分析.计算结果表明,氢负离子在电介质球面附近的光剥离截面不仅与入射光子的能量有关,而且还与电介质球面的介电常数有关.对于给定的电介质球面,随着入射光子的能量增加,光剥离截面的振荡振幅减小、振荡频率增加.当入射光子的能量增加到某一临界值时,光剥离截面的振荡结构消失.除此之外,随着电介质球面介电常数的增大,光剥离截面的振荡结构变得更加复杂.当电介质常数增大到无穷大时,体系的光剥离截面和氢负离子在金属球面附近的光剥离截面一致.因此,可以通过改变入射光子的能量及电介质球面的介电常数对氢负离子在电介质球面附近的光剥离截面进行调控研究.研究结果对负离子体系在电介质球面附近的光剥离的实验研究可以提供一定的理论指导和参考价值.     

氢负离子在微腔中的光剥离研究

利用闭合轨道理论,研究了氢负离子在金属面和弹性界面组成的微腔中的光剥离截面.结果表明,微腔的上下表面对氢负离子的光剥离截面产生很大影响.若固定金属面与氢负离子之间的距离不变,当弹性界面与氢负离子之间的距离很大时,弹性界面对氢负离子光剥离截面的影响很小,光剥离截面的振荡幅度和振荡频率与只有金属面时的情况类似.随着弹性界面和氢负离子之间距离的不断减小,光剥离截面的振荡幅度增大,振荡频率减小.若保持氢负离子和弹性界面之间的距离不变,随着金属面和氢负离子之间距离d₀的不断增大, 关键词： 光剥离截面 闭合轨道理论 微腔     

氢负离子在均匀电场和金属面附近的光剥离研究

利用闭合轨道理论,计算了氢负离子在均匀电场和金属面附近的光剥离截面.结果表明,在均匀电场的基础上加上金属面之后,在电离阈附近氢负离子的光剥离截面发生了很大的变化,和仅有均匀电场存在时的光剥离截面相比,截面的振荡幅度增大,振荡频率减小.并且在电场强度相同时,随着金属面与氢负离子距离的不断增大,光剥离截面振荡的幅度不断减小,振荡的频率不断增大,当金属面和氢负离子的距离增大到一定值时,金属面的影响消失,氢负离子的光剥离截面趋近于只有电场存在时的情况.这一结果对于研究负离子体系在界面附近的光剥离问题具有一定的参考价值.     

激光脉冲对氢负离子在金属面附近光剥离的影响

利用闭合轨道理论和金属面附近氢负离子的双脉冲光剥离截面的计算公式,计算了氢负离子在金属面附近激光脉冲作用下的光剥离截面.计算结果表明:如果脉冲宽度远大于闭合轨道的回归周期时,它对光剥离截面的影响很小;当脉冲宽度小于闭合轨道的周期或者可以和闭合轨道的周期相比较时,光剥离截面的振荡幅度大大地减弱.光剥离截面除了与脉冲宽度有关外,还与双脉冲之间的时间延迟、相位差有关.对于某些相位差, 双脉冲光剥离截面的取值增大; 而对于另外一些相位差, 光剥离截面的取值减小.因此,可以利用脉冲激光来控制氢负离子在表面附近光剥离 关键词： 激光脉冲 光剥离截面 金属面 闭合轨道理论     

GaAs电介质表面对剥离电子通量分布影响的数值研究

利用半经典开轨道理论,研究了GaAs电介质表面对氢负离子在磁场中的光剥离干涉图样的作用,推导并计算了本体系下的光剥离电子流通量,主要研究GaAs电介质表面到离子的距离不同对电子通量的影响。结果表明,电介质表面到离子的距离可以改变电子通量分布中的振荡结构,影响探测平面上形成的干涉图样的分布。因此,可以通过改变电介质表面到离子的距离来调控剥离电子的通量和干涉图样分布。     

氢负离子在磁场和金属面附近电子通量分布的研究

利用半经典开轨道理论, 研究了磁场和金属面附近氢负离子的剥离电子通量分布, 并揭示了电子通量分布中的振荡结构与经典轨道之间的关系.固定离子到金属面的距离, 研究了不同的磁场强度对电子通量分布的影响. 结果表明, 由于与电子通量分布相联系的剥离电子的经典轨迹增加, 随着磁场强度的增加, 通量分布变得复杂. 此外发现剥离电子的能量变化也会影响电子通量分布. 因此可以通过改变磁场强度大小和剥离电子的能量来调控剥离电子通量分布和干涉图样. 研究结果对于理解负离子在外场、表面附近的电子流通量和剥离电子干涉图样问题以及将来实验研究负离子的光剥离显微问题都可以提供一定的参考. 关键词： 开轨道理论 电子通量 金属面 磁场     

氢负离子在变形球面附近的光剥离

利用理论模型成像方法, 对氢负离子在变形球面附近的光剥离进行了研究. 首先, 推导出了光剥离电子通量的计算公式, 然后对电子通量分布和光剥离截面进行了计算.结果表明: 平面效应只在一定范围内对氢负离子的光剥离过程产生影响. 在距离z轴比较近的区域, 球面效应起主要作用, 电子通量分布和光剥离截面与只有球面存在的情况一致, 此时平面效应可以忽略; 距离z轴较远的区域, 平面效应和球面效应共同起作用, 此时变形球面对光剥离过程会产生比较大的影响. 当球面半径和氢负离子到球面之间的距离给定, 随着入射光子的能量增大, 光剥离电子通量的振幅先增大后减小, 然后又慢慢增大, 振荡频率增大.当固定球面与氢负离子之间的距离, 随着球面半径的增大, 光剥离电子的通量趋向于只存在球面的情况.因此, 可以通过改变入射光子能量和球面的半径对氢负离子的光剥离进行调控. 本文的结果对于研究负离子体系在曲面附近的光剥离及光剥离 显微问题的实验研究具有一定的参考价值. 关键词： 理论模型成像方法 光剥离电子通量 光剥离截面 变形球面     

H-在矩形腔中的光剥离截面

根据半经典闭合轨道理论研究了矩形腔对氢负离子的光剥离进程的影响,利用反射定律分析矩形腔中与光剥离截面相联系的剥离电子运动的闭合轨道,推导出该体系下的光剥离截面公式,在线性极化光的作用下,研究了腔的尺寸对光剥离截面的影响,并将其与麻志君等用量子力学方法研究的结果进行对比.结果表明:矩形腔的存在及其大小对光剥离截面中由闭合轨道相联系的返回波与波源函数发生干涉引起的振荡有很大影响,且振荡曲线随着矩形腔的尺寸变化明显;当激光极化方向沿着x轴或者y轴时,半经典方法与量子力学方法的结果一致,当激光极化方向沿着Z轴时,由于矩形腔在z轴上对光剥离截面不作用,采用半经典方法光剥离截面与无场的情况相同,但是采用量子力学方法,其结果中却出现振荡,表明半经典方法研究此体系结果更准确.研究结果可对研究负离子光剥离以及外腔中的电子输运问题提供参考.     

H~-在矩形腔中的光剥离截面（英文）

根据半经典闭合轨道理论研究了矩形腔对氢负离子的光剥离进程的影响,利用反射定律分析矩形腔中与光剥离截面相联系的剥离电子运动的闭合轨道,推导出该体系下的光剥离截面公式,在线性极化光的作用下,研究了腔的尺寸对光剥离截面的影响,并将其与麻志君等用量子力学方法研究的结果进行对比.结果表明:矩形腔的存在及其大小对光剥离截面中由闭合轨道相联系的返回波与波源函数发生干涉引起的振荡有很大影响,且振荡曲线随着矩形腔的尺寸变化明显;当激光极化方向沿着x轴或者y轴时,半经典方法与量子力学方法的结果一致,当激光极化方向沿着z轴时,由于矩形腔在z轴上对光剥离截面不作用,采用半经典方法光剥离截面与无场的情况相同,但是采用量子力学方法,其结果中却出现振荡,表明半经典方法研究此体系结果更准确.研究结果可对研究负离子光剥离以及外腔中的电子输运问题提供参考.     

量子计算正三角形腔内的氢负离子光剥离截面

用传统量子力学方法研究了横截面为正三角形的腔内氢负离子光剥离, 得到了光剥离截面随能量变化的解析表达公式. 该公式还给出了剥离截面的阈值行为. 进一步研究发现, 当氢负离子处于正三角形一角附近时, 用量子力学方法得到的结果与氢负离子处于60°角域内时使用闭合轨道理论得到的结果一致.     

Magnetic field effect in photodetachment from negative ion in electric field near metal surface

Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Du et al. for the H in the electric field near a metal surface (J. Phys. B 43 035002 (2010)), some additional closed orbits are produced due to the effect of magnetic field. For a given ion-surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.     

Photodetachment microscopy of H~- in the magnetic field near different dielectric surfaces

We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory.We give a clear physical picture describing the photo-detachment of H-in this case.The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength.It is found that the electron flux distributions of H-are very different in a magnetic field near different dielectric surfaces,namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion.Therefore,the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant.We hope that our studies may guide the future experimental research in photo-detachment microscopy.     

Photo-detachment cross section of H- near two parallel interfaces

The photo-detachment cross section of H^- near two parallel elastic interfaces is derived and calculated by using the closed orbit theory. The photo-detachment cross section of H^- near two interfaces is shown to exhibit multi-periodic oscillations when the distance between the H^- and the interface is varied. Each peak in the Fourier transformed photo-detachment cross section corresponds to the length of a closed orbit, which is quite similar to the case of atomic spontaneous emissions in a dielectric slab. This study provides a new understanding of the photo=detachment process of H^- in the presence of interfaces.     

Photodetachment dynamics of H~- ion in a harmonic potential plus a time-dependent oscillating electric field

The photodetachment dynamics of H~- ion in a harmonic potential plus an oscillating electric field is studied using the time-dependent closed orbit theory. An analytical formula for calculating the photodetachment cross section of this system is put forward. It is found that the photodetachment cross section of this system is nearly unaffected for the weak oscillating electric field strength, but oscillates complicatedly when the oscillating electric field strength turns strong. In addition, the frequency of the harmonic potential and the oscillating electric field(the frequency of the harmonic potential and the frequency of the oscillating electric field are the same in the paper, unless otherwise stated.) can also affect the photodetachment dynamics of this system. With the increase of the frequency in the harmonic potential and the oscillating electric field, the number of the closed orbits for the detached electrons increased, which makes the oscillatory structure in the photodetachment cross section much more complex. Our study presents an intuitive understanding of the photodetachment dynamics driven by a harmonic potential plus an oscillating electric field from a space and time dependent viewpoint.This study is very useful in guiding the future experimental research for the photodetachment dynamics in the electric field both changing with space and time.     

Effects of the dielectric discontinuity on the photodetachment of H− ion

Using the closed orbit theory, we studied the effects of dielectric discontinuity on the photodetachment of H^? ions. The photodetachment cross-section of H^? in a medium with dielectric discontinuity was derived and calculated. The results have shown that the relative dielectric constants of the medium have a significant influence on the photodetachment of H^?. If H^? is kept in a medium with a relative small dielectric constant, the photodetachment cross-section of H^? becomes oscillating only in a small region above the ionization threshold. However, if H^? is kept in a medium with a relative large dielectric constant, the oscillation in the photodetachment cross-section becomes much stronger. Besides, the distance between H^? and the dielectric dividing interface also influences the photodetachment of H^?. For a given dielectric medium, the oscillation in the cross-section decreased with increasing distance between H^? and the dielectric dividing interface. Therefore, we can control the photodetachment of a negative ion by changing the dielectric constant and the ion–interface distance. This study provides a new understanding of the photodetachment process of negative ions in the presence of a dielectric medium.