Anisotropic magnetoresistance of partially relaxed SrRuO3 films

The SrRuO₃ films (50 nm thick) grown by laser evaporation on (001)(LaAlO₃)_0.3 + (Sr₂AlTaO₆)_0.7 substrates were under partially relaxed biaxial compressive mechanical stresses. The films consisted of crystallites with lateral dimensions of 40–100 nm and a relative azimuthal misorientation of about 0.9°. Ferromagnetic ordering of spins in the SrRuO₃ films was manifested by a change in the slope of the temperature dependence of their electrical resistivity ρ at T ≈ 155 K. For a magnetic field H parallel to the measuring current, the maximum values (∼7.5%) of the magnetoresistance MR = [ρ(μ₀ H = 5 T) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) were observed at temperatures of about 100 K. At T = 95 K (μ₀ H = 5 T), the anisotropic magnetoresistance of the films was 8% and increased by a factor of approximately 1.5 with decreasing temperature to 4.2 K.     

Temperature‐dependent Raman study of PrFeO3thin film

Low‐temperature Raman study of (001)‐oriented PrFeO₃ thin film of around 200 nm thickness deposited on a LaAlO₃ (001) substrate by using the pulsed‐laser deposition technique is presented. X‐ray diffraction analysis of this film shows an orthorhombic structure with Pbnm space group. The observed substrate‐induced strain is found to be small. In the room temperature Raman spectra, different Raman modes were observed that were classified according to the orthorhombic structure. All the observed modes show a decrease in wavenumber with rise in temperature, except the B_1g mode (624 cm⁻¹) which shows some anomalous behavior. We tried to correlate the variations in linewidth and position with temperature for the observed modes with the octahedral disorder of FeO₆. Many possibilities are presented to explain the observed results. Copyright © 2010 John Wiley & Sons, Ltd.     

Metamagnetic effects in epitaxial BaFe<Subscript>1.8</Subscript>Cr<Subscript>0.2</Subscript>As<Subscript>2</Subscript> thin films

Epitaxial BaFe_1.8Cr_0.2As₂ thin films with the tetragonal c-axis perpendicular to the thin film surface were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.7 (LSAT) single crystalline substrates using pulsed laser deposition (PLD). Resistive measurements indicate the existence of two transitions at temperatures of about 80 K and 40 K. The transition at 80 K is attributed to the structural transition from the high temperature tetragonal phase to the low temperature orthorhombic phase accompanied with the magnetic transition from a paramagnetic to an antiferromagnetic state as known for doped bulk systems. Below T ≈ 40 K the magnetization curves measured perpendicularly to the orthorhombic c-axis in fields up to 9 Tesla show two inflexion points indicating metamagnetic transitions.     

Magnetoresistance anisotropy of strontium ruthenate films grown coherently on a TiO2-terminated SrTiO3(001) substrate

The SrRuO₃ films with a thickness of 80 nm have been coherently grown on a TiO₂-terminated SrTiO₃(001) substrate. Biaxial mechanical stresses induce a considerable difference between the unit cell parameters of the SrRuO₃ layer in the substrate plane (??3.904 ?) and along the normal to the substrate surface (??3.952 ?). The electrical resistivity of the SrRuO3 film decreases practically linearly with increasing magnetic field strength H when the latter is parallel to the current I _b and the projection of the easy magnetization axis in the substrate plane. At T = 4.2 K, ??₀ H = 14 T, and the magnetic field oriented along the hard magnetization axis, the negative anisotropic magnetoresistance of the grown layers reaches 16% and exerts a notice-able effect on the response of electrical resistivity of the SrRuO₃ film to the magnetic field.     

Anomalous Hall effect in Cu and Fe codoped In2O3 and ITO thin films

We present a systematic study of the structure, magnetization, resistivity, and Hall effect properties of pulsed laser deposited Fe- and Cu-codoped In₂O₃ and indium-tin-oxide (ITO) thin films. Both the films show a clear ferromagnetism and anomalous Hall effect at 300 K. The saturated magnetic moments are almost the same for the two samples, but their remanent moments M_r and coercive fields H_C are quite different. M_r and H_C values of ITO film are much smaller than that of In₂O₃. The ITO sample shows a typical semiconducting behavior in whole studied temperature range, while the In₂O₃ thin film is metallic in the temperature range between 147 and 285 K. Analysis of different conduction mechanisms suggest that charge carriers are not localized in the present films. The profile of the anomalous Hall effect vs. magnetic field was found to be identical to the magnetic hysteresis loops, indicating the possible intrinsic nature of ferromagnetism in the present samples.     

Selective fabrication of n‐ and p‐type SnO films without doping

Undoped n‐ and p‐type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria‐stabilized zirconia (YSZ) substrates with out‐of‐plane and in‐plane orientation relationships of (001)_SnO//(001)_YSZ and [110]_SnO//[100]_YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm²/Vs at room temperature and the carrier activation energy is 0.14 eV for the n‐type film. The growth at increased oxygen partial pressure yields p‐type films, demonstrating the selective fabrication of both n‐ and p‐type SnO films without doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Influence of the growth mechanism and thermoelastic stresses on the lattice dynamics of heteroepitaxial films of barium strontium titanate

Heteroepitaxial thin films of Ba_0.7Sr_0.3TiO₃ (BST-0.3) solid solutions were grown on single-crystal (001) MgO substrates by high-frequency cathode sputtering of a stoichiometric ceramic target. The parameters of the tetragonal unit cell of a film were determined by x-ray diffraction methods, and the temperature dependence of the parameter c was studied depending on the synthesis conditions in the temperature range 293–520 K. An E(TO) soft mode was observed in the Raman spectra, the frequency of which correlates with two-dimensional stresses arising in films. It is shown that the two-dimensional stresses in a film are controlled not only by the film-substrate lattice constant mismatch and the difference of their thermal expansion coefficients but also are significantly dependent on the heteroepitaxial growth mechanism. It is shown that the phase transition to the tetragonal paraelectric phase during film heating occurs irrespective of the growth mechanism.     

Effect of lanthanum substitution on the Raman spectra of barium titanate thin films

Thin films of Ba_1−xLa_xTiO₃ on platinum substrates were synthesized using the sol–gel method for x values of 0.0, 0.03, 0.05, and 0.10, and the effect of trivalent La³⁺ substitution on the structural and dielectric properties was studied. Using X‐ray diffraction, structural analysis of these compositions revealed a slight increase in the tetragonal distortion of the unit cell with increase in La content. Accordingly, an increase in the tetragonal to cubic transition temperature T_T/C was detected by temperature‐dependent Raman spectroscopy in the range of 70–500 K. Unlike the results from Raman scattering for the La‐doped BaTiO₃ films, the dielectric measurements showed broad and diffused dielectric maxima, making the estimation of the transition temperature merely qualitative. Copyright © 2006 John Wiley & Sons, Ltd.     

Interrelatedness of Fe composition on structural and magnetic properties in Fe-doped SrRuO3 thin films

Fe-doping (up to 11 mole%) into SrRuO₃ (SRO) thin films on SrTiO₃ substrates decreased correlation lengths of both surface and interface. It turned out that Fe was doped in the valence state of 3+ without formation of the Fe₂O₃ phase, which caused orthorhombic distortion. T _C values decreased from 145 K to 97 K with increasing Fe concentration (C _Fe). High magnetic switching fields were observed for all Fe-doped SRO thin films and their strengths showed a linear relationship with C _Fe. Detail structural characterization using synchrotron X-ray diffraction and X-ray photoemission spectroscopy were used to understand its unique magnetic switching field properties.     

Fabrication of atomically smooth SrRuO3 thin films by laser molecular beam epitaxy

High-quality SrRuO₃ (SRO) thin films and SrTiO₃/SRO bilayer were grown epitaxially on SrTiO₃ (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction ϑ-2ϑ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΘ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials. Supported by the National Natural Science Foundation of China (Grant No. 10334070)     

The Hall effect in La0.67Ba0.33MnO3

The Hall effect in polycrystalline barium-substituted lanthanum manganite La_0.67Ba_0.33MnO₃ has been investigated in the temperature interval 298<T<355 K. It is found that the anomalous Hall coefficient in this material is two orders of magnitude greater than the normal coefficient. At T ₀=333 K the normal Hall coefficient changes sign, which indicates a change in the type of conductivity. The temperature dependence of the normal Hall coefficient, electrical conductivity, and magnetoresistance is explained on the basis of the concept of motion of the mobility edge attendant as the temperature changes. Zh. éksp. Teor. Fiz. 113, 981–987 (March 1998)     

Synthesis and Raman investigation of sol–gel‐derived relaxor ferroelectric thin films

Pb(Fe_2/3W_1/3)O₃ (PFW) thin films were deposited on platinized silicon substrate by a chemical solution deposition technique. Room‐temperature X‐ray diffraction (XRD) revealed a pure cubic crystal structure of the investigated material. The microstructure indicated good homogeneity and density of the thin films. A Raman spectroscopic study was carried out on PFW to study the polar nano‐regions in the temperature range 85–300 K. The Raman spectra showed a change in the peak intensity and a shift towards the lower wavenumber side with temperature. The Raman spectra also revealed the transition from the relaxor to the paraelectric state of PFW. There was no evidence of a soft mode in the low‐temperature region, in contrast to the normal ferroelectric behavior. The polar nano‐regions tend to grow and join at low temperatures (∼85 K), which become smaller with increase in temperature. The presence of strong Raman spectra in the cubic phase of the material is due to the presence of distributed Fm3m(Z = 2) symmetry nano‐ordered regions in the Pm3m(Z = 1) cubic phase. Copyright © 2007 John Wiley & Sons, Ltd.     

Anisotropic in-plane strain in W-doped (Ba,Sr)TiO<Subscript>3</Subscript> thin films deposited by pulsed-laser deposition on (001)MgO

The structural and the microwave dielectric properties of Ba_xSr_(1-x)TiO₃ films (BST) with x=0.5, 0.6 and 0.7, containing 1 mol % W have been investigated. The films were grown by pulsed-laser deposition on MgO (001) substrates at a temperature of 720 °C in an oxygen pressure from 3 to 500 mTorr. The film structures were determined by X-ray diffraction. The lattice parameters were fitted to a tetragonal distortion of a cubic lattice. The out-of-plane lattice parameter (c) was calculated from the position of the (004) reflection. Using c, the in-plane lattice parameter, a, was calculated from the position of the (024) and (224) reflections. A deviation in the calculated values for a, beyond the systematic error, was found in the in-plane lattice parameter, suggesting an in-plane orthorhombic distortion (a, a’). Films with x=0.7 showed a minimum in-plane distortion due to a better lattice match with the substrate. The ratio of the in-plane and out-of-plane lattice parameters was calculated as a measure of the lattice distortion (a/c and a’/c). The dielectric properties of the films deposited were measured at room temperature at 2 GHz using gap capacitors fabricated on top of the dielectric film. For all Ba/Sr ratios investigated in the W-doped material, the dielectric Q (1/cosδ) was observed to be insensitive to the oxygen deposition pressure. A peak in the change in the dielectric constant, as a function of an applied electric field (0–80 kV/cm), was observed for films deposited in 50 mTorr of oxygen. The largest K-factor, K=(ε(0)-ε(V )/ε(0)×Q(0)), for films deposited from a BST x=0.6 (1 mol % W-doped) target was observed in the film that had a minimum in-plane strain, where a∼a’ and c was greater than a and a’. Received: 4 July 2002 / Accepted: 5 July 2002 / Published online: 17 December 2002 RID="*" ID="*"Permanent address: Nuclear Research Center–Negev, P.O. Box 9001 Beer-Sheva, Israel RID="**" ID="**"Corresponding author. Fax: +1-202/767-5301, E-mail: horwitz@ccsalpha3.nrl.navy.mil     

Orthorhombic structure: a necessity in superconducting 1-2-3 compounds

X-ray and resistivity measurements on YBa₂Cu₃O_7−δ (1-2-3) samples show that for the same but low oxygen concentration,δ⋍0·55, no superconducting transition down to 4·2 K is observed for the tetragonal phase samples while the orthorhombic phase shows aT _c ∼ 31 K. The effect of oxygen concentration onT _c is isolated.T _c=91±1 K has, however, been observed continuously for the normal oxygen annealed samples,δ⋍0·07. The experimental results suggest strongly the necessity of the 1-2-3 compound to be in the orthorhombic phase for the superconducting mechanism to be operative.     

Magnetoresistance of La0.67Ca0.33MnO3 films the coherent growth of which is disturbed by mechanical stress relaxation

Because of a large (m = 1.8%) lattice mismatch between La_0.67Ca_0.33MnO₃ and LaAlO₃, manganite films grown on a lanthanum aluminate substrate experience biaxial mechanical compression stresses. Strong adhesion to the substrate causes a substantial tetragonal distortion (γ ≈ 1.04) of the unit cell in a 20-nm-thick layer of the manganite film coherently grown on (001)LaAlO₃, while in the remaining part (≈75%) of the manganite film, stresses partially relax. The stress relaxation decreases γ and increases the effective volume of the unit cell of the La_0.67Ca_0.33MnO₃ film. The relaxed part of the La_0.67Ca_0.33MnO₃ film consists of crystallites 50–200 nm across azimuthally misoriented by approximately 0.3°. The temperature dependences of the resistivity and negative magnetoresistance of the manganite films exhibit maxima at 240 and 215 K, respectively. At temperatures below 50 K, the dependence of the resistivity on the magnetic induction taken with the induction varying from 0 to 14 T and vice versa becomes hysteresis.     

铌酸钾钠基无铅压电陶瓷的X射线衍射与相变分析

分析了斜方相、四方相铌酸钾钠基无铅压电陶瓷材料的结构和X射线衍射图谱的特点. 对于铌酸钾钠基压电材料斜方相结构, 从构成晶胞的一个单斜原胞进行分析, 计算出X射线衍射谱上每个衍射角附近的衍射峰数目和相对强度. 提出了2θ在20°—60°范围内根据(1 0 2)衍射峰(52°附近)和(1 2 1)衍射峰(57°附近)劈裂的数目区分斜方和四方相的新方法. 对于多晶陶瓷粉末, 可以更简便的由22°(或45°)附近前后峰的相对高低来判断斜方、四方相. 关键词： 铌酸钾钠 无铅压电陶瓷 X射线衍射 相变     

Pulsed laser deposition of (110) oriented semiconductive SrFeO3−x thin films

 The semiconductive perovskite-type oxide SrFeO_3-x (x<0.16) (SFO) thin films have been directly fabricated on (001)SrTiO₃ and (001)LaAlO₃ single crystal substrates by pulsed laser deposition(PLD) under high oxygen partial pressure of 100 Pa. The SFO thin films were (110) oriented. The x-ray photoelectron spectroscopy (XPS) analysis showed that the surface of SFO thin film has strong gas absorption capability. The resistance versus temperature has been measured in the temperature range from 77 K to 300 K. The SFO thin film showed typical semiconductive property. Dependence of resistance of SFO thin film on oxygen pressure was measured and result showed that the SFO thin film had better oxygen sensitive property. Received: 14 May 1996/Accepted: 15 August 1996     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Phase transformations in films deposited by laser ablation of Hf in an oxygen Atmosphere

The structure of the hafnium dioxide films grown during pulsed laser sputtering of an Hf target in an oxygen atmosphere is examined, and the phase transformations that occur in them at annealing are studied by transmission electron microscopy and electron diffraction. Amorphous, tetragonal, orthorhombic, and monoclinic HfO₂ phases are detected in the films. The tetragonal modification of HfO₂ exhibits an epitaxy effect on a KCl(001) substrate. When the amorphous film is annealed in vacuum or air, it crystallizes to form the monoclinic modification of HfO₂. The action of an electron beam on the amorphous film in vacuum leads to the formation of the orthorhombic and monoclinic modifications of HfO₂. The transformation from the orthorhombic to the monoclinic modification of HfO₂ is accompanied by a phase size effect. At the final stage of crystallization, the monoclinic modification represented by HfO₂ dendrite crystals is the predominant structural constituent.