利用散射光增强弱吸收固体混合物中主要光吸收物质的光声光谱特征

在传统的透射和反射光谱中, 散射光通常是误差的主要来源之一, 然而对光声光谱, 散射光有可能成为促进光谱测量的积极因素. 本文研究了弱吸收固体混合物–-奥氮平药片及其粉末的光声光谱. 为了排除光声池吸收散射光所产生背景光声信号的干扰, 取试样与其空白物的差值谱进行碳黑归一化, 得到了只与试样自身性质相关的归一化光声光谱.实验发现通过将药片碾成粉末, 可以使奥氮平药片的主成分奥氮平原料药的光声光谱特征凸显出来. 分析表明光散射效应是这一现象产生的主要原因. 传统光谱技术的障碍–-散射光却能促进光声光谱测量, 这显示出光声技术在光谱测量领域的独特优势. 上述实验提供了一种初步快速鉴别弱吸收固体混合物中少量光吸收物质的新方法, 这一方法有望应用于固体药物、矿物和土壤分析等领域. 关键词： 光声光谱 散射光 弱吸收固体混合物 奥氮平     

基于Top-Hat变换的高光谱吸收特征增强方法

对地物高光谱进行特征分析是高光谱影像用于目标识别和地物分类的基础.基于数学形态学的Top-Hat变换提出了一种光谱吸收峰增强算法.该方法在增强吸收峰的同时还保持了吸收谱带的波形特征.从美国地质调查局USGS光谱数据库选取的11条不同矿物的反射光谱曲线,对其吸收峰增强曲线和原始光谱曲线进行了K-means聚类分析.结果表明:吸收峰增强曲线的聚类结果在波形上和地质背景上都优于原始光谱曲线;且将吸收峰增强曲线的聚类的结果用矿物光谱的ASTER影像采样光谱曲线显示时,能总结出各组矿物的ASTER光谱典型特征.说明吸收峰增强曲线很好地增强了矿物光谱的吸收特征,提高了高光谱的可分性,同时还能为基于多光谱数据的遥感信息提取提供参考,是十分有用的高光谱分析方法.     

用光声技术研究半导体TiO2,ZnO纳米晶粉的光学特性

应用新型的光声光谱技术,研究了不同种类和不同制备工艺条件的半导体纳米晶粉的光学特性,测量了半导体TiO2、ZnO和掺铝ZnO纳米晶粉的光声光谱,获得了这些半导体纳米晶粉的带隙和光谱吸收系数.研究结果表明,相同种类和相同颗粒形状的半导体纳米晶粉的粒径越小,光学吸收系数越大.半导体纳米晶粉的带隙与相同种类纳米颗粒形状(圆球...     

纳米BaTiO_3的光声光谱研究

利用光声光谱技术对不同退火温度的纳米BaTiO3粉末进行了研究。结果表明,纳米BaTiO3粉末随晶粒长大,吸收边红移,说明能隙变窄,这与晶格参数变化有关．在橙黄光到近红外出现的宽吸收带是由氧缺位俘获的电子在缺陷附加能级上的跃迁所产生的,其变化趋势强烈地依赖于颗粒尺寸。     

8-羟基喹啉锂的合成、表征及发光特性

通过液相反应合成了高纯度、高产率的8-羟基喹啉锂(Liq)粉体,制备了Liq薄膜,通过IR光谱、UV吸收谱、X射线衍射谱、荧光光谱对其结构和性能进行了表征,并利用UV吸收谱、电化学循环伏安法、荧光光谱研究了它的电子能级结构。结果表明,pH值和溶剂对Liq的合成有很大影响,而温度的影响不大。利用真空热蒸镀很容易制备高质量、无定性薄膜,Liq的熔点365℃,具有很高的热稳定性。Liq的LUMO能级2．94eV,HOMO能级5．95eV,光学禁带宽度3．01eV．在363nm紫外光的激发下。产生发光峰在452nm附近、半峰全宽为69．4nm的蓝光发射,发光亮度高,色纯度高。由于电子与声子的强耦合作用以及带隙态的影响,产生了5424cm^-1的斯托克斯频移。     

多孔氧化铝薄膜的制备和光学特性研究

采用阳极氧化法制备了二维有序纳米孔氧化铝膜.研究了工艺参数对多孔薄膜有序性、孔径、膜厚度等的影响，测量了多孔氧化铝有序膜的光透过、光吸收和光发射等光学特性.结果表明，在波长360 nm附近多孔氧化铝有序膜的光透过谱线和光吸收谱线发生突变，波长大于360 nm时，光透过增强；波长小于360 nm时，光吸收增强.多孔氧化铝有序膜的光致发光强度和峰位与激发光波长有关，光致发光谱范围在340~600 nm.     

高浓度气体共振光声光谱信号饱和特性研究

采用恒流驱动耦合机械斩波技术在激光光声光谱装置上系统测量了5%—100%宽浓度范围甲烷气体的共振光声信号,发现在高浓度区共振光声信号呈现异常的饱和特征.基于气体吸收和光声光谱原理定量分析了光声信号饱和的主要原因及影响因素,研究表明,气体样本对入射光强吸收而导致的声源与本征共振模式的耦合系数改变是异常饱和的主要原因,并导出判定光声信号饱和深度的准则以用于判定高浓度气体饱和深度。     

激光促进多孔硅内表面氧化与光致发光的退化

本文对刚制备的以及分别经以下三种情况:1.样品在1大气压的氧气中经激光(Ar~+激光器的48.80nm线,功率密度为1.77W/cm~2)连续照射1小时;2.样品在1大气压的氧气中在没有激光照射的情况下保持1小时;3.样品在1.3×10~2Pa真空度下用激光连续照射1小时处理后的多孔硅在室温下进行了光致发光谱和傅里叶变换红外吸收测量,研究了处理前后光谱的变化。实验发现经第一种情况处理后光致发光峰位蓝移了约0.1eV,发光强度衰减了二十几倍,相应的其红外光谱中与氧有关的吸收峰强度大幅度增长,而经第二,三两种情况处理后它们的光致发光及红外吸收谱则无大的变化。研究表明在氧气中激光辐照能大大加速多孔硅内表面的氧化。我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移,由氧化作用产生的非辐射复合中心导致光致发光效率的下降。     

癌变组织的光声光谱研究

报道了用双光束光声光谱技术对上种癌变组织研究的结果，发现在６３０ｎｍ处有一明显的吸收峰，该吸收峰在正常组织的光声光谱中不出现。这对癌症的光谱诊断和激光治疗提供了有价值的光学资料。     

120keV的N+注入SiC薄膜的光谱特性研究

文中主要研究了120keV的N⁺注入后SiC薄膜样品的光致发光谱(PL)和傅立叶红外光谱(FTIR)特性.从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成.从PL光谱则发现365nm处的发光峰明显增强,这表明N⁺注入使得带隙中深的能级辐射中心复合的效率大幅度提高     

Influence of Carbon Multiple Treatments on the Photoelectrical Properties of Porous Glasses

We have studied the influence of multiple carbon treatments on the properties of silica porous glasses. Each step of each carbon treatment started with filling the voids of porous glass with carbon. During the following anneal carbon interacted with the walls of the voids. It was shown that low dimensional silicon clusters were formed inside the voids as a result of this reaction. In the experiments the photoluminescence spectra and conductivity of carbon-processed specimens were measured. The size-distribution of voids in porous glasses was calculated from absorption—desorption isotherms. An original technique was proposed that allowed to obtain the size-distribution of silicon clusters from the positions of peaks in the photoluminescence spectra. Correlation between the photoluminescence intensity and the sizes of pores was revealed. The observed oscillations in the shapes of the photoluminescence spectra in subsequent cycles of carbon treatment are explained by changes of the number of clusters corresponding to definite peaks in the size distribution spectra.     

Photoacoustic investigations of the optical absorption spectra of porous silicon layers on a silicon backing

This paper presents a series of experimental photoacoustic spectra of porous silicon layers on crystalline silicon and their numerical analysis performed in the proposed two-layer model. The goal of the analysis was to calculate the optical absorption spectra of porous silicon from the photoacoustic spectra of porous silicon layers on a silicon background. The experimental character of the observed absorption band associated with the porous silicon was revealed. This is the first attempt at a theoretical interpretation of the photoacoustic spectra of porous silicon on a silicon backing.     

Synthesis of carbides in the arc plasma

A method of synthesis of iron, silicon, titanium, and tungsten carbides in an argon arc between graphite electrodes is developed. It is found that iron, silicon, and titanium atoms introduced into the interelectrode gap cause the voltage drop across the gap to decrease, whereas tungsten atoms increase this voltage. The X-ray diffraction analysis of synthesized powders reveals carbide and graphite crystallites. Their relative concentrations are estimated from the intensities of the respective reflection peaks. The morphological examination of the synthesized particles shows that titanium carbide particles are the largest and iron carbide ones are the finest. Raman spectra taken of the powders confirm the presence of graphite and carbide crystallites.     

Stable blue-green and ul traviolet photoluminescence from silicon carbide on porous silicon

β-Silicon carbide layers have been prepared by high temperature pyrolysis of polyimide Langmuir-Blodgett films on porous silicon substrate in vacuum. The formation of silicon carbide is confirmed by the IR and XRD spectra. It is found that photoluminescence still exists and appears in the blue-green and ultraviolet regions after thermal treatment at 900°C. These results indicate that the silicon carbide layers, which are formed, are responsible for the blue-green luminescence.     

p型α-多孔SiC的光致发光光谱研究

用UV光照射和不用UV条件下形成的p型α-PSC的PL光谱，2.35eV，2.50eV和2.70eV及3.4eV附近的发射峰已被观察到.研究了不同的制备条件下形成的p型α-PSC的PL谱的稳定性和不同的能量的光激发引起PL谱的差别.结果表明，在电化学腐蚀过程中制备条件对PSC的PL谱有很大的影响，前者在低能区有较强的光发射而后者则在高能区有较强的光发射；前者的光谱稳定性较好而后者发射光谱强度则随时间的增加而减少.对产生这些差别的原因进行了深入讨论. 关键词：     

Synthesis of a periodic SiC/C nanostructure

Highly porous periodic structures consisting of a three-dimensional replica of pores in the initial opal lattice have been synthesized by high-temperature thermochemical treatment of opal matrices filled with carbon compounds, followed by dissolution of silicon dioxide. It has been shown that the main phases of the composite are carbon and silicon carbide. Based on the X-ray diffraction, Raman, and IR spectroscopy data, it has been assumed that the composite contains fragments of hexagonal diamond. The photoluminescence and optical reflection spectra of the composites have been measured.     

X‐ray absorption near‐edge structure anomalous behaviour in structures with buried layers containing silicon nanocrystals

Substructure and phase composition of silicon suboxide films containing silicon nanocrystals and implanted with carbon have been investigated by means of the X‐ray absorption near‐edge structure technique with the use of synchrotron radiation. It is shown that formation of silicon nanocrystals in the films' depth (more than 60 nm) and their following transformation into silicon carbide nanocrystals leads to abnormal behaviour of the X‐ray absorption spectra in the elementary silicon absorption‐edge energy region (100–104 eV) or in the silicon oxide absorption‐edge energy region (104–110 eV). This abnormal behaviour is connected to X‐ray elastic backscattering on silicon or silicon carbide nanocrystals located in the silicon oxide films depth.     

飞秒激光改性6H-碳化硅晶体表面光电导增益现象研究

半绝缘6H型碳化硅(6H-SiC)具有高电阻率性质,在可见光照射下进行光电导测量时,通常光生电流很小;然而经过飞秒激光辐照改性之后,发现在可见光波段的光电导有明显的增益.本文利用紫外-可见-近红外吸收谱、X射线光电子能谱和发光光谱测量分析了激光改性之后碳化硅样品的光谱吸收、发射和晶体元素比例变化情况.分析认为碳化硅光电导增益的原因是飞秒激光辐照过程改变了碳化硅表面的硅碳元素的原子浓度比,形成新的物质结构形式,从而导致了表面光电导性能的提高.     

Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L _2,3 edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO₂ is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.     

Optical properties of porous silicon

We have measured the absorption spectra and the dispersion of refractive index for porous silicon samples with different porosities in the energy range 1.5–3.5 eV at room temperatures. The experimental data are compared with the dependences calculated by using Bruggeman’s theory for the dielectric constant of a multicomponent system composed of crystal silicon, SiO₂, amorphous silicon, and voids (pores). The best agreement between the experimental and theoretical dependences is achieved for a significant percentage of SiO₂ in the porous silicon samples.