Molecular-dynamics simulation of defect formation energy in boron nitride nanotubes

We investigate the defect formation energy of boron nitride nanotubes (BNNTs) using molecular dynamics simulation. Although the defect with tetragon–octagon pairs (TOP) is favored in the flat BNNTs cap, BN clusters, and the growth of BNNTs, the formation energy of the TOP defect is significantly higher than that of the pentagon–heptagon pairs (PHP) defect in BNNTs. The PHP defect reduces the effect of the structural distortion caused by the TOP defect, in spite of homoelemental bonds. The instability of the TOP defect generates the structural transformation into BNNTs with no defect at about 1500 K. This mechanism shows that the TOP defect is less favored in case of BNNTs.     

Adsorption of TCDD molecule onto CNTs and BNNTs: Ab initio van der Waals density-functional study

2,3,7,8-Tetrachlorodibenzo-p-dioxin (TCCD) is one of the most dangerous compounds that infect the environment and hence its removal is crucial for safety in human life. In this work, we have investigated the interaction of TCDD with boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) by using the density functional theory (DFT) calculations. Our first-principles results have been validated by experiment and also other theoretical values for the similar system. The adsorption energies for TCDD molecule on the BNNTs and CNT are calculated. It was found that TCDD adsorption ability of BNNT is slightly stronger than that of CNT and TCDD molecule prefers to be adsorbed on BNNTs with molecular axis parallel to the tube axis. The results obtained indicate that TCDD is weakly bound to the outer surface of all the considered nanotubes and the obtained adsorption energy values and binding distance are typical for the physisorption. We also evaluated the influence of curvature and introduced defects on the TCDD adsorption ability of BNNTs. Furthermore, we have analyzed the electronic structure and charge population for the energetically most favorable complexes and the results indicate that no significant hybridization between the respective orbitals of the two entities was accomplished.     

Specific heat capacity and density of multi-walled boron nitride nanotubes by chemical vapor deposition

We report on the basic physical quantities of boron nitride nanotubes (BNNTs), namely specific heat capacity and density, which have not been measured to date. A series of differential scanning calorimetry experiments were performed, and specific heat capacity was calculated for multi-walled BNNTs synthesized by chemical vapor deposition using boron and metal oxide as precursor. Very close specific heat capacity values were revealed for BNNTs and a BN powder of hexagonal (h-BN) phase. Densities of BNNTs were measured through density analyses of their epoxy composites. Our work is important as far as bulk properties of large amounts of BNNTs are crucial, for example, thermal property and density prediction for composite materials with BNNTs embedded.     

Enhanced thermal–mechanical properties of polymer composites with hybrid boron nitride nanofillers

The present work focuses on the investigation of the thermal–mechanical properties of the epoxy composites with hybrid boron nitride nanotubes (BNNTs) and boron nitride nanosheets (BNNSs). The stable dispersions of BNNTs–BNNSs were achieved by a noncovalent functionalization with pyrene carboxylic acid. The resulting epoxy/BNNTs–BNNSs composites exhibited homogeneously dispersed BNNTs–BNNSs and a strong filler–matrix interface interaction. The composites showed a 95 % increase in thermal conductivity and a 57 % improvement in Young’s modulus by addition of only 1 vol. % BNNTs–BNNSs. Meanwhile, the composites also retained a high electrical resistance of pure epoxy. Our study thus shows the potential for hybrid BNNTs–BNNSs to be successfully used as the nanofillers of polymer composites for applications in electrically insulating thermal interface materials.     

Amine-functionalized boron nitride nanotubes

The surface of boron nitride nanotubes (BNNTs) has been functionalized with amine groups via ammonia plasma irradiation. The functionalized tubes were characterized by Fourier transform infrared spectroscopy and electron energy loss spectroscopy. Amine-functionalized BNNTs were found to be highly dispersible in chloroform, and are predicted to form the basis of a new class of chemically reactive nanostructures.     

Molecular dynamics study of the torsional vibration characteristics of boron-nitride nanotubes

In recent years, synthesizing inorganic nanostructures such as boron nitride nanotubes (BNNTs) has led to extensive studies on their exceptional properties. In this study, the torsional vibration behavior of boron-nitride nanotubes (BNNTs) is explored on the basis of molecular dynamics (MD) simulation. The results show that the torsional frequency is sensitive to geometrical parameters such as length and boundary conditions. The axial vibration is found to be induced by torsional vibration of nanotubes which can cause instability in the nanostructure. It is also observed that the torsional frequency of BNNTs is higher than that of their carbon counterpart. Moreover, the shear modulus is predicted by incorporating MD simulation numerical results into torsional vibration frequency obtained through continuum-based model of tubes. Finally, it is seen that the torsional frequency of double-walled boron-nitride nanotubes (DWBNNTs) is between the frequencies of their constituent inner and outer tubes.     

Density functional study of zigzag BN nanotubes with equivalent ends

A density functional theory (DFT) study was performed on representative model of zigzag boron nitride nanotubes (BNNTs) with equivalent ends. Two models of (6,0) BNNTs were considered in the calculations in which a belt composed of carbon atoms was substituted instead of boron and nitrogen atoms in the middle of the nanotube. Hence, model 1 was created with two equivalent B-ends and model 2 was created with two equivalent N-ends. The optimization process and also the calculated electric field gradient (EFG) tensors in two models of BNNT remarkably revealed that the electronic structure properties of those nuclei located at the end of nanotube are duplicated in the considered models of BNNTs. The calculations were performed at the level BLYP method and 6-31G* standard basis set using GAUSSIAN 98 package of program.     

Dispersion of boron nitride nanotubes in aqueous solution with the help of ionic surfactants

We report that ammonium oleate surfactants can help the dispersion of multiwalled boron nitride nanotubes (BNNTs) in water to form a BNNT solution stable for several months, which was due to the non-covalent functionalization of nanotube surfaces. Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence (PL) analysis with synchrotron radiation source revealed that this BNNT aqueous solution preserves the intrinsic optical properties of BNNTs.     

Adsorption of HCN molecules on Ni,Pd and Pt-doped (7, 0) boron nitride nanotube: a DFT study

We studied affinity of pure and Ni, Pd and Pt-doped (7, 0) boron nitride nanotubes (BNNTs) to toxic HCN molecules using density functional theory calculations. The results indicated that the pure (7, 0) BNNTs can weakly adsorb HCN molecules with adsorption energy of ?0.2474 eV. Upon adsorption of HCN molecules on this nanotube, the band gap energy was decreased from 3.320 to 2.960 eV. The more negative adsorption energy between these transition metal-doped (7, 0) BNNTs and HCN molecules indicated that doping of (7, 0) BNNTs with Ni, Pd and Pt elements can significantly improve the affinity of BNNTs toward this gas. Additionally, it was found that the interaction energy between HCN molecules and Pt-doped BNNTs is more negative than those of the Ni and Pd-doped BNNTs. These observations suggested that the Pt-doped (7, 0) BNNTs are strongly sensitive to HCN molecules and therefore it may be used in gas sensor devices for detecting this toxic gas.     

Functionalization of BN nanotubes with free radicals: electroaffinity-independent configuration and band structure engineering

The preferable configuration and electronic structure of several types of free radical functionalized boron nitride nanotubes (BNNTs) were investigated by using density functional theory computations. All the free radicals have strong interaction with B atom in the tube, in spite of the electroaffinity of the radicals. However, though a large charge is transferred from tubes to NH₂, OH or CN radicals, little change happens to the electronic structure of BNNTs, while COOH and COCl radicals introduce half-filled impurity levels around the Fermi level. Higher functionalization concentration leads to multiple impurity states around the Fermi level, and makes BNNTs p-type semiconductors.      

Boron nitride nanotubes composed of four- and eight-membered rings

The properties of boron nitride nanotubes composed of four- and eight-membered rings (referred to as four-eight-membered rings BNNTs) were calculated using density functional theory (DFT). The calculated results show that the band gap of the four-eight-membered rings BNNTs is greatly reduced, down to a range of 2.530–3.975 eV. The band gap decreases as the number of walls increases, not only enabling the allotropes to show semiconductor properties but also to fully meet the third-generation semiconductor band gap requirements, furthermore, the band gap decreases significantly with the number of walls increases.     

A comparison between the mechanical and thermal properties of single-walled carbon nanotubes and boron nitride nanotubes

Carbon nanotubes (CNTs) are semimetallic while boron nitride nanotubes (BNNTs) are wide band gap insulators. Despite the discrepancy in their electrical properties, a comparison between the mechanical and thermal properties of CNTs and BNNTs has a significant research value for their potential applications. In this work, molecular dynamics simulations are performed to systematically investigate the mechanical and thermal properties of CNTs and BNNTs. The calculated Young’s modulus is about 1.1 TPa for CNTs and 0.72 TPa for BNNTs under axial compressions. The critical bucking strain and maximum stress are inversely proportional to both diameter and length-diameter ratio and CNTs are identified axially stiffer than BNNTs. Thermal conductivities of (10, 0) CNTs and (10, 0) BNNTs follow similar trends with respect to length and temperature and are lower than that of their two-dimensional counterparts, graphene nanoribbons (GNRs) and BN nanoribbons (BNNRs), respectively. As the temperature falls below 200 K (130 K) the thermal conductivity of BNNTs (BNNRs) is larger than that of CNTs (GNRs), while at higher temperature it is lower than the latter. In addition, thermal conductivities of a (10, 0) CNT and a (10, 0) BNNT are further studied and analyzed under various axial compressive strains. Low-frequency phonons which mainly come from flexure modes are believed to make dominant contribution to the thermal conductivity of CNTs and BNNTs.     

Effects of structural defects on the compressive buckling of boron nitride nanotubes

In this paper, we examined the buckling of perfect and defective armchair boron nitride nanotubes with three types of vacancy defects, i.e. B- and N- single vacancy defects and B–N- double vacancy defect, using molecular dynamics simulations. To this end, all systems were modeled with a Tersoff-type potential, which is able to accurately describe covalent bonding of BN systems. We applied external uniaxial compressive forces to the nanotubes in vacuum and derived the critical buckling loads and strains, at room temperature in an NVT-ensemble. Our results showed significant differences between the critical buckling strengths of pristine and defective nanotubes. The resistance to axial buckling decreased with the introduction of one vacancy defect, and the B–N- double vacancy was the most seriously damaged structure, followed by B-vacancy and N-vacancy defects. Furthermore, the B-vacancy was shown to have the most significant effect on the decrease of the critical buckling strain. This can be attributed to the excessive asymmetries and perturbations induced in the structure of the nanotube and the local deformations around the defective site around the B-vacancy, even before loading. Moreover, results show that reduction in the buckling strength of the nanotube due to the presence of more than one B-vacancy defect depends on their distribution. If the two or three defects are close to each other, they act as a single point of weakness and the critical buckling load is only slightly reduced (similar to the existence of only one vacancy defect). However, if the defects are at more distant points, the critical buckling load may experience a higher decrease. Results show that vacancy defects play a critical role in the compressive buckling performance of boron nitride nanotubes and special attention must be paid to the presence of structural defects when designing members against buckling, especially for micro- and nano-electro-mechanical systems. On the other hand, defect engineering is a great means for tailoring the buckling strength of boron nitride nanotubes, in cases where the nanotube is expected to absorb energy through compressive buckling deformation and is not designed against, but for buckling.     

A DFT study for adsorption of CO on Ni,Pd and Pt atoms doped (7, 0) boron nitride nanotube

By using density functional theory calculations, we investigated the structural, electronic and magnetic properties of carbon monoxide (CO) adsorption on the pure, Ni, Pd and Pt doped atoms in zigzag single-walled (7, 0) boron nitride nanotubes (BNNTs). The results indicated that compared to the pure (7, 0) BNNTs, replacing B atom by Ni, Pd and Pt atoms can significantly increase the adsorption energy of CO gas on the BNNTs. The adsorption energies of CO gas on the pure (7, 0) Ni, Pd and Pt doped (7, 0) BNNTs are ?0.2013, ?1.746, ?1.593 and ?2.257 eV, respectively. Our results revealed that in comparison with the pure (7, 0) BNNTs, CO gas is chemisorbed on the transition metal doped (7, 0) BNNTs with the appreciable adsorption energy. In addition, it was found that by doping these atoms, band gap energy of the pure (7, 0) BNNTs is considerably decreased. These observations suggested that the Pt doped (7, 0) BNNTs can be introduced as a promising candidate in gas sensor devices for detecting CO gas.     

BN管状团簇到单壁纳米管的几何结构和电子性质

利用密度泛函理论(DFT),对氮化硼(BN)管状团簇的几何结构、稳定性和电子性质进行了研究.选取合适的BN结构单元作为结构生长基元,采用逐层生长的方式计算得到有限长度、不同截面尺寸的稳定管状团簇.结构中B-N交替排列,结构组成中的四元环和六元环数目均符合一般表达式.计算结果表明,通过适当组装管状团簇以及碳原子掺杂,可以制备出带隙可调的单壁氮化硼纳米管.     

Superhard BC_2N:an Orthogonal Crystal Obtained by Transversely Compressing(3,0)-CNTs and(3,0)-BNNTs

By means of density functional theory calculations,an orthogonal boron-carbon-nitrogen compound called(3,0)-BC_2N is predicted,which can be obtained by transversely compressing(3,0) carbon nanotubes(CNTs) and boron nitride nanotubes(BNNTs).Its structural stability,elastic properties,mechanical properties and electronic structure are systematically investigated.The results show that(3,0)-BC_2N is a superhard material with a direct bandgap.However,its similar structures,(3,0)-C and(3,0)-BN are indirect semiconductors.Strikingly,(3,0)-C is harder than diamond.We also simulate the x-ray diffraction of(3,0)-BC_2 N to support future experimental investigations.In addition,our study shows that the transition from(3,0) CNTS and BNNTs to(3,0)-BC_2 N is irreversible.     

Variation of the electronic properties of zigzag boron nitride nanotubes by Al-doping: a DFT study

Boron nitride nanotubes (BNNTs) are semiconductors with a wide band gap. In comparison with carbon nanotubes (CNTs), BNNTs have higher chemical stability, excellent mechanical properties and higher thermal conductivity. In this paper, we study the effect of diameters and substituting B and N atoms of various zigzag BNNTs with Al, on structural and electronic properties of BNNTs in solid state using the density functional theory method. The results of calculations of density of states and band structure (band) showed that the band gap between the valence and conduction level increases as a result of the enhancement of tube diameter of BNNTs. Finally, the results showed that the electronic properties of the pristine BNNTs can be improved by doping Al atom in the zigzag configuration of tubes.     

Multi-walled boron nitride nanotubes composed of diverse cross-section and helix type shells

High-resolution transmission electron microscopy (HRTEM) and electron diffraction analysis were performed on pure multi-walled novel type boron nitride nanotubes (BNNTs) by using a field-emission high-resolution 300 kV transmission electron microscope JEM-3100FEF (Omega filter). In contrast to commonly observed monochiral multi-walled BNNTs, the present tubular shells within every individual BNNT (up to ～50 shells) revealed the whole range of helixes, i.e., from zig-zag to arm-chair. This being paired with the wide variations in cross-sectional tubular shapes, i.e., from a faceted polygon to a cylinder, results in complex overall tubular structures. The BN atomic lattice fringe separations, down to 1.25 Å, on most symmetrical arm-chair (d_10-10=1.25 Å) and zig-zag (d_11-20=2.15 Å) tubular wall fragments within the same multi-walled BN nanotubes were ultimately achieved during HRTEM.     

Probing the out-of-plane distortion of single point defects in atomically thin hexagonal boron nitride at the picometer scale

Crystalline systems often lower their energy by atom displacements from regular high-symmetry lattice sites. We demonstrate that such symmetry lowering distortions can be visualized by ultrahigh resolution transmission electron microscopy even at single point defects. Experimental investigation of structural distortions at the monovacancy defects in suspended bilayers of hexagonal boron nitride (h-BN) accompanied by first-principles calculations reveals a characteristic charge-induced pm symmetry configuration of boron vacancies. This symmetry breaking is caused by interlayer bond reconstruction across the bilayer h-BN at the negatively charged boron vacancy defects and results in local membrane bending at the defect site. This study confirms that boron vacancies are dominantly present in the h-BN membrane.     

Boron nitride nanotubes with quadrangular cross sections: Density functional studies

Density functional theory (DFT) calculations have been performed to investigate the availabilities and properties of boron nitride nanotubes (BNNTs) with quadrangular cross sections. To achieve the purposes, the original structure of a representative BNNT was individually decorated by the carbon and silicon atoms to make the C-BNNT and Si-BNNT models. The sp³ hybridizations were set for the C and Si atoms to make possible the formation of the quadrangular cross sections for the BNNTs. The optimized results indicated that the investigated models could be stabilized; however, they showed different properties. The atomic scale properties based on computations of quadrupole coupling constants (C_Q) also approved different properties for the C-BNNT and Si-BNNT models. Moreover, the C_Q parameters indicated that the properties of C-BNNT could be considered similar to the original BNNT; however, more discrepancies were observed for the Si-BNNT.