轴压和扭转复合载荷作用下氮化硼纳米管屈曲行为的分子动力学模拟

采用分子动力学方法模拟了氮化硼纳米管在轴压和扭转复合荷载作用下的屈曲和后屈曲行为.在各加载比例下,给出了初始线性变形阶段和后屈曲阶段原子间相互作用力的变化,确定了屈曲临界荷载关系.通过对屈曲模态的细致研究,从微观变形机理上分析了纳米管对不同外荷载力学响应的差异.研究结果表明,扶手型和锯齿型纳米管均呈现出非线性的屈曲临界荷载关系,复合加载下的屈曲行为具有强烈的尺寸依赖性.温度升高将导致屈曲临界荷载的下降,且温度的影响随加载比例的变化而变化.无论在简单加载或复合加载中,同尺寸的碳纳米管均比氮化硼纳米管具有更强地抵抗屈曲荷载的能力.     

Electromechanical buckling analysis of boron nitride nanotube using molecular dynamic simulation

In this paper, the effect of electric field on axial buckling of boron nitride nanotubes is investigated. For this purpose, molecular dynamics simulation and continuum mechanics are used for the first time simultaneously. In molecular dynamics simulation, the potential between boron nitride atoms is considered as Tersoff and Timoshenko beam theory is used in continuum mechanics. In this paper, buckling of zigzag and armchair boron nitride nanotubes are investigated. Here, the effects of the electric field and the length of the boron nitride nanotube on the critical load are investigated and it is shown that the effect of the electric field is different with respect to the arrangement of atoms in the boron nitride nanotubes. In fact, the electric field creates axial and torsional loads on the zigzag and armchair nanotube, respectively. Axial buckling of the zigzag nanotube is dependent on the electric field, whereas in the armchair nanotubes, the electric field changes have no effect on the axial buckling. To better understand the impact of the electric field on axial buckling, these results are compared with the continuum mechanics.     

温度、应变率和空位缺陷对氮化硼纳米管压缩性能的影响

采用分子动力学方法,分别模拟了完好的和含有缺陷的氮化硼纳米管的轴向压缩过程。原子间的相互作用采用Tersoff多体势函数来描述。结果表明,同尺寸的锯齿型氮化硼纳米管的临界轴向压缩强度高于扶手型氮化硼纳米管,这与碳纳米管的研究结果一致。发现纳米管的压缩强度,如临界轴向内力在低温下受温度影响明显,并且和应变率的大小有关。然而,应变率对纳米管的弹性变形没有影响。另外,还发现空位缺陷降低了纳米管的力学性能。与完好的纳米管相比,含有缺陷的纳米管轴向压缩强度对于温度的影响并不敏感。     

单、双原子空位缺陷对扶手椅型单层碳纳米管屈曲性能的不同影响

采用分子动力学方法,对完善和含缺陷扶手椅型单层碳纳米管进行轴向压缩的数值模拟,对比研究三种不同的温度环境下单、双原子空位缺陷对碳纳米管轴压变形性能的特殊影响.研究结果表明管壁缺陷显著降低了纳米管低温时的承载能力,由于单原子空位缺陷造成的特殊应力集中效应会引发纳米管过早发生局部屈曲,单原子缺陷管的屈曲强度反而小于双原子管的屈曲强度. 关键词： 分子动力学 碳纳米管 屈曲 缺陷     

Theoretical explorations on the armchair BN nanotube with defects

A systematic study of armchair boron nitride nanotubes (BNNTs) with defects has been carried out within density functional theory. The effect brought by the defects is localized. The defect sites have major contribution to the frontier molecular orbital and change the conductivity of the BNNTs. The defect sites are reactive centers. The substitution of boron with carbon enhances the field emission of the tubes. Doping or vacancy defect creates active center on nanotubes, thus broadening the applications of nanotubes in chemistry and material sciences through functionalization.     

Mechanical Properties of Single-Walled （5,5） Carbon Nanotubes with Vacancy Defects

First-principles simulation is used to investigate the structural and mechanical properties of vacancy defective single-walled （5,5） carbon nanotubes. The relations of the defect concentration, distribution and characteristic of defects to Young＇s modulus of nanotubes are quantitatively studied. It is found that each dangling-bond structure （per supercell） decreases Young＇s modulus of nanotube by 6.1% for symmetrical distribution cases. However the concentrative vacancy structure with saturated atoms has less influence on carbon nanotubes. It is suggested that the mechanical properties of carbon nanotubes depend strongly upon the structure and relative position of vacancies in a certain defect concentration.     

Buckling analysis of carbon nanotube bundles under axial compressive,bending and torsional loadings via a structural mechanics model

A structural mechanics model is employed for the investigation of the buckling behavior of carbon nanotube bundles of three single-walled carbon nanotubes (SWCNTs) under axial compressive, bending and torsional loadings. The effects of van der Waals (vdW) forces are further modeled using a nonlinear spring element.The effects of different types of boundary conditions are studied for nanotubes with various aspect ratios. The results reveal that bundles comprising longer SWCNTs exhibit lower critical buckling load. Moreover, for the fixed-free boundary condition the rate of critical buckling load reduction is highest, while the lowest critical buckling load occurs. Simulations show good agreement between our model and molecular dynamics results.     

Probing the out-of-plane distortion of single point defects in atomically thin hexagonal boron nitride at the picometer scale

Crystalline systems often lower their energy by atom displacements from regular high-symmetry lattice sites. We demonstrate that such symmetry lowering distortions can be visualized by ultrahigh resolution transmission electron microscopy even at single point defects. Experimental investigation of structural distortions at the monovacancy defects in suspended bilayers of hexagonal boron nitride (h-BN) accompanied by first-principles calculations reveals a characteristic charge-induced pm symmetry configuration of boron vacancies. This symmetry breaking is caused by interlayer bond reconstruction across the bilayer h-BN at the negatively charged boron vacancy defects and results in local membrane bending at the defect site. This study confirms that boron vacancies are dominantly present in the h-BN membrane.     

Fracture analysis of monolayer graphene sheets with double vacancy defects via MD simulation

Carbon nanostructures such as carbon nanotubes (CNTs) and graphene sheets have attracted great attention due to their exceptionally high strength and elastic strain. These extraordinary mechanical properties, however, can be affected by the presence of defects in their structures. When a material contains multiple defects, it is expected that the stress concentration of them superposes if the separation distances of the defects are low, which causes a more reduction of the strength. On the other hand, it is believed that if the defects are far enough such that their affected areas are distinct, their behavior is similar to a material with single defect. In this article, molecular dynamics (MD) is used to explore the influence of separation distance of double vacancy defects on the mechanical properties of single-layered graphene sheets (SLGSs). To this end, critical stress and strain of SLGSs containing double vacancy with different distances are determined and the results are compared with those of perfect SLGSs and graphene sheets with single vacancy defect. The results reveal that the ultimate strength of the SLGS with double vacancy tends to the one with a single vacancy when the separation distance becomes further. In this regard, the threshold distance beyond which double defects behave like a single one is examined. Finally, Young’s modulus of perfect, single and double vacancy defected graphene sheets with different separation distances is determined. It is concluded that this property is slightly affected by the separation distance.     

First-principles study of electronic and elastic properties of Stone–Wales defective zigzag carbon nanotubes

The interaction and coupling between the electrical, mechanical properties and formation energy for SW defective (10,0) carbon nanotube is studied in density functional theory. The investigated configurations include the axial and circumferential orientations for single defect as well as four distribution types for double ones. The more stable defective configurations, namely, SW-I configurations for single SW defective carbon nanotube and II–II-(2) and I–I ones for double SW defective tubes are related to high symmetry distribution of the defects. Moreover, we found that the σ^?–π^* hybridization induced by curvature effect causes the semiconductor to metal transition for double axial SW defects case. Young's modulus reduction of SW defective carbon nanotube with respect to defect-free one is less than 8%. The energy bands and Young's moduli of double SW defective tubes are mostly affected by the defect distribution and concentration but insensitive to the circumferential distance between the double defects.     

六方氮化硼单层中一种(CN)3VB缺陷的第一性原理计算

二维六方氮化硼(hBN)的点缺陷最近被发现可以实现室温下的单光子发射,而成为近年的研究热点.尽管其具有重要的基础和应用研究意义,hBN中发光缺陷的原子结构起源仍然存在争议.本文采用基于密度泛函理论的第一性原理计算,研究hBN单层中一种B空位附近3个N原子被C替代的缺陷(CN)3VB.在hBN的B空位处,3个N原子各自带一个在平面内的悬挂键及相应的未配对电子,而通过C替换可以消除未配对的电子.系统研究了(CN)3VB缺陷的几何结构、电子结构以及光学性质,结果表明,缺陷可以由一个对称的亚稳态经过原子结构弛豫变成1个非对称的、3个C原子连在一起的基态结构.缺陷的形成在hBN中引入了一些由缺陷悬挂σ键及重构的π键贡献的局域缺陷态.这些缺陷态可以导致能量阈值在2.58 eV附近的可见光内部跃迁.本文的工作有助于进一步理解hBN中点缺陷的构成及光学性质,为实验上探讨发光点缺陷的原子结构起源及其性质提供理论依据.     

Study of titanium adsorption on perfect and defected BC3 nanotubes using density functional theory

Density functional theory calculations were used to study the titanium (Ti) adsorption on perfect and defected (4, 0) BC₃ nanotubes, considering Stone–Wales and vacancy defects. The binding energy values for these nanotubes were larger than the corresponding values for carbon nanotubes. The charge transfer from the Ti atom to nanotube was observed for all systems studied. The most exothermic binding process occurred for the Ti adsorption on a native V_B defect, which showed minimum structural deformation with respect to a perfect BC₃ tube. In the case of a nanotube with a reconstructed carbon vacancy, the adsorption of Ti generated a half-metallic anti-ferromagnet. The results obtained in this paper are relevant for spintronics and hydrogen adsorption applications.     

热力耦合作用下双层碳纳米管的扭转屈曲

考虑碳纳米管周边弹性介质和层间范德瓦耳斯力的作用,利用连续介质力学的壳体理论,建立了热力耦合作用下碳纳米管屈曲问题的控制方程,给出了相应的临界屈曲扭矩的解析解.数值模拟结果表明,在低温和室温环境下,碳纳米管的临界屈曲载荷随着温度变化量的增加而提高;在高温环境下,碳纳米管的临界屈曲载荷随着温度变化量的增加而降低. 关键词： 碳纳米管 屈曲 热力耦合     

缺陷对碳纳米管摩擦与运动行为的影响

本文采用分子动力学方法研究了公度、无公度情况下含空位、Stone-Thrower-Wales(STW)型缺陷的单壁碳纳米管(SWCNT)在石墨基底上的摩擦与运动行为.结果表明,公度时缺陷的存在导致了界面局部无公度,减小了摩擦.随着碳纳米管底部STW缺陷的增多,碳纳米管变形增大,侧向力波动的幅值减小,局部无公度性增强,摩擦减小.含空位缺陷的碳纳米管所受的摩擦力明显大于含STW缺陷的碳纳米管,原因在于含空位缺陷的碳纳米管在运动的后期出现了明显的翻转现象,增大了能量耗散.无公度时,碳纳米管与石墨基底间的摩擦力很小,缺陷对其摩擦力影响不大,原因在于无论是否含有缺陷,碳纳米管与石墨组成的界面的无公度性差别不大.     

5d过渡金属原子掺杂氮化硼纳米管的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法,研究了当氮化硼纳米管（BNNT）中的B原子和N原子被5d过渡金属原子（Lu,Hf,Ta,W,Re,Os,Ir,Pt,Au,Hg）取代时BNNT的几何结构、电子结构和磁性性质. 作为对比,给出了理想BNNT,B缺陷体系（V_B）和N缺陷体系（V_N）的相应结果. 研究发现：5d原子取代B（B_5d）时体系的局域对称性接近于C_3v,但是取代N（N_5d）时体系的局域对称性偏离C_3v对称性较大;利用相同的5d原子进行掺杂时,B_5d的成键能比N_5d的成键能大;对于B_5d或者N_5d,其成键能基本上随着5d原子的原子序数的增大而降低;掺杂体系中出现了明显的杂质能级,给出了态密度等结果;不同掺杂情况的磁矩不同,取代B 时体系的总磁矩呈现出较强的规律性. 利用对称性和分子轨道理论解释了5d原子取代B时杂质能级的产生和磁性的变化规律. 关键词： 第一性原理计算 5d过渡金属原子 氮化硼纳米管 密度泛函理论     

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects (doping, Stone-Wales, and vacancy) is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes (CNTs) are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales (SW) defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.     

分子空位缺陷对环三亚甲基三硝胺含能材料几何结构、电子结构及振动特性的影响

含能材料中的微观缺陷是导致“热点”形成并相继引发爆轰的重要因素. 然而, 由于目前人们对材料内部微观缺陷的认识不足, 限制了对含能材料中“热点”形成微观机理的理解, 进而阻碍了含能材料的发展和应用. 为了洞悉含能材料内部微观缺陷特性及探索缺陷引发“热点”的形成机理, 利用第一性原理方法研究了分子空位缺陷对环三亚甲基三硝胺(RDX) 含能材料的几何结构、电子结构及振动特性的影响, 探讨了微观缺陷对初始“热点”形成的基本机理. 采用周期性模型分析了分子空位缺陷对RDX几何结构、电子能带结构、电子态密度及前线分子轨道的影响. 采用团簇模型分析了分子空位缺陷对RDX振动特性的影响. 结果发现, 分子空位缺陷的存在使其附近的N–N键变长, 分子结构变得松弛; 使导带中很多简并的能级发生分离, 电子态密度减小, 并使由N-2p和O-2p轨道形成的导带底和价带顶均向费米面方向移动, 降低了能带隙值, 增加了体系活性. 前线分子轨道及红外振动光谱的计算分析表明, 分子缺陷使最高已占分子轨道电荷主要集中在缺陷附近的分子上, 且分子中C–H键和N–N键能减弱. 这些特性表明, 分子空位缺陷的存在使体系能带隙变小, 并使缺陷附近的分子结构松弛, 电荷分布增多, 反应活性增强; 在外界能量激发下, 缺陷附近分子将变得不稳定, 分子中的C–H键或N–N键较易先发生断裂, 发生化学反应释放能量, 进而成为形成“热点”的根源.     

Torsional buckling behavior of boron-nitride nanotubes using molecular dynamics simulations

Based on molecular dynamics simulations, the mechanical properties and buckling behavior of boron-nitride nanotubes under the action of torsional load are investigated. According to the results, the torsional properties of a boron-nitride nanotube are higher than those of its carbon counterpart. The effect of geometrical parameters on these parameters is also investigated. It is observed that by increasing the radius of nanotubes of the same length, unlike the critical shear strain, the critical torque considerably increases. The effect of chirality is also found to be negligible in the cases of critical shear strain and buckling mode, unlike the critical torque.     

轴向冲击载荷作用下双壁碳纳米管的动力屈曲

应用改进的有限元方法,建立考虑层间范德华力作用的壳-弹簧非线性有限元模型,基于B-R运动准则,系统地研究了双壁碳纳米管的动力屈曲问题,得到了轴向冲击载荷作用下双壁碳纳米管的临界动力屈曲载荷和临界动力失效载荷. 研究结果表明,在动力屈曲过程中,双壁碳纳米管层间距的变化非常小,各管的变形相互协调;碳纳米管中应力波的传播导致碳纳米管出现非对称屈曲模态,可明显观测到四个环向波瓣,沿着碳纳米管的轴线方向,四个波瓣的波峰和波谷交替变化. 对碳纳米管动力屈曲问题的研究表明,冲击载荷的大小和持续时间对碳纳米管的动力屈曲有 关键词： 碳纳米管 动力屈曲 冲击载荷     

Geometry and electronic properties of single vacancies in achiral carbon nanotubes

An ideal single vacancy can be formed by removing one carbon atom from a hexagonal network. The vacancy is one of the most important defect structures in carbon nanotubes (CNTs). Vacancies can affect the mechanical, chemical, and electronic properties of CNTs. We have systematically investigated single vacancies and their related point defects for achiral, single-walled carbon nanotubes (SWNTs) using first-principles calculations. The structures around single vacancies undergo reconstruction without constraint, forming ground-stateor metastable-state structures. The 5-1DB and 3DB point defects can be formed in armchair CNTS, while the 5-1DB-P and 5-1DB-T point defects can be formed in zigzag CNTs. The related point defects can transform into each other under certain conditions. The formation energies of armchair CNTs change smoothly with the tube radius, while in the case of the 3DB defect, as the radius get larger, the formation energies tend towards a constant value.