| 组合注入质子导致不对称耦合双量子阱截面混合效应研究 |
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| 引用本文： | 缪中林,陈平平,蔡炜颖,李志锋,袁先漳,刘平,史国良,徐文兰,陆卫,陈昌明,朱德彰,潘浩昌,胡军,李明乾.组合注入质子导致不对称耦合双量子阱截面混合效应研究[J].物理学报,2001,50(1):116-119. |
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| 作者姓名： | 缪中林 陈平平 蔡炜颖 李志锋 袁先漳 刘平 史国良 徐文兰 陆卫 陈昌明 朱德彰 潘浩昌 胡军 李明乾 |
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| 作者单位： | (1)中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083; (2)中国科学院上海原子核研究所核技术研究开放实验室,上海201800 |
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| 基金项目： | 国家自然科学基金(批准号：69676014)资助的课题.
Project supported by the National Natural Science Foundation of China (Grant No.69676014). |
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| 摘 要： | 关键词：
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| 关 键 词： | 不对称耦合双量子阱 组合注入 显微光荧光谱 界面混合效应 半导体 砷化镓 |
| 修稿时间： | 2000年6月3日 |
ASYMMETRICAL COUPLING
DOUBLE QUANTUM WELL INTERMIXING INDUCED BY COMBINATORIAL PROTON IMPLANTATION |
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| MIAO ZHONG-LIN,CHEN PING-PING,CAI Wei-Ying,LI ZHI-FENG,YUAN XIAN-ZHANG,LIU PING,SHI Guo-liang,XU WEN-LAN,LU WEI,CHEN Chang-ming,ZHU De-Zhang,PAN CHANG-HAO,HU JUN,LI Ming-Qian.ASYMMETRICAL COUPLING
DOUBLE QUANTUM WELL INTERMIXING INDUCED BY COMBINATORIAL PROTON IMPLANTATION[J].Acta Physica Sinica,2001,50(1):116-119. |
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| Authors: | MIAO ZHONG-LIN CHEN PING-PING CAI Wei-Ying LI ZHI-FENG YUAN XIAN-ZHANG LIU PING SHI Guo-liang XU WEN-LAN LU WEI CHEN Chang-ming ZHU De-Zhang PAN CHANG-HAO HU JUN LI Ming-Qian |
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| Abstract: | With combinatorial proton implantation, we obtained several areas with different implantation doses in single wafer of GaAs/AlGaAs asymmetry coupling double quantum well grown by MBE, and studied the optical characteristics with photoluminescence (PL) and photo-modulated reflectance(PR). Without rapid thermal annealing, maximum transition energy shift 81 meV was obtained in single wafer. The diffusion lengths of Al component calculated from error function were larger than that calculated from coefficient of diffusion formula. The interface effect of double quantum well is sensitive to proton implantation. |
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| Keywords: | Asymmetry coupling double quantum well (ACDQW) Combinatorial implantation Photoluminescence Photo\|modulated Reflectance Intermixing |
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