Rb吸附石墨烯纳米带电子性质和光学性质的研究

本文基于密度泛函理论的第一性原理方法了计算了Rb、O和H吸附石墨烯纳米带的差分电荷密度、能带结构、分波态密度和介电函数，调制了石墨烯纳米带的电子性质和光学性质，给出了不同杂质影响材料光学特性的规律.结果表明本征石墨烯纳米带为n型直接带隙半导体且带隙值为0.639 eV；Rb原子吸附石墨烯纳米带之后变为n型简并直接带隙半导体，带隙值为0.494eV；Rb和O吸附石墨烯纳米带变为p型简并直接带隙半导体，带隙值增加为0.996eV；增加H吸附石墨烯纳米带后，半导体类型变为n型直接带隙半导体，且带隙变为0.299eV，带隙值相对减小，更有利于半导体发光器件制备.吸附Rb、O和H原子后，石墨烯纳米带中电荷密度发生转移，导致C、Rb、O和H之间成键作用显著.吸附Rb之后，在费米能级附近由C-2p、Rb-5s贡献；增加O原子吸附之后，O-2p在费米能级附近贡献非常活跃，杂化效应使费米能级分裂出一条能带；再增加H原子吸附之后，Rb-4p贡献发生蓝移，O-2p在费米能级附近贡献非常强，费米能级分裂出两条能带.Rb、O和H的吸附后，明显调制了石墨烯纳米带的光学性质.     

中子辐照诱生F3聚集心对刚玉晶体光吸收谱影响研究

利用嵌入原子簇模型结合F心的类H离子波函数,研究了α-Al₂O₃晶体中F₃聚集型色心存在时,晶体的能带结构、态密度、Mulliken电荷布居的变化,讨论了色心的光学吸收跃迁模式。结果表明,由于F₃聚集心的存在,在α-Al₂O₃晶体的禁带中引入了1个单能级和1个双重简并色心能级,产生了一个3.54eV的从色心能级到导带底的新的吸收跃迁。与中子辐照后的刚玉晶体的光学吸收实验结果比较,实验测得的0.356μm(3.483eV)处的吸收峰是由于F₃聚集心的电子的吸收跃迁所引起的。同时发现F₃聚集心的格点处的电荷布居比单F心格点处的电荷布居小。     

高能量,大注量中子辐照下α—Al2O3中的F3聚集型色心电子结？…

利用嵌入原子族模型结合Ｆ心的类Ｈ离子波函数研究了α－Ａｌ２Ｏ３晶体中Ｆ３聚集型色心存在时,晶体的能带结构,态密度,Ｍｕｌｌｉｋｅｎ电荷布局的变化,讨论了色心的光学吸收跃迁模式。结果表明,由于Ｆ３聚集心的存在,在α－Ａｌ２Ｏ３中引入了１个单能级和１个２重简并色心能级,产生了一个３．５４ｅＶ的从色心能级到导带底的新的吸收跃迁。经与高能量,大注量中子辐照后的刚玉晶体的光学吸收实验结果比较,我们认为实验测     

In掺杂ZnTe发光性能的第一性原理计算

利用基于密度泛函理论的第一性原理对In掺入ZnTe半导体后引入的各种缺陷进行了结构优化、 能带和态密度分析及转换能级的计算. 计算结果表明: 掺杂后体系中主要存在两种缺陷, 一种是In原子替换了Zn原子的置换型缺陷; 另一种是由In替换Zn后再与临近的Zn空位形成的复合缺陷. 二者分别在导带底下方0.26 eV和价带顶上方0.33 eV的位置形成各自的转换能级. 电子在这两个转换能级之间跃迁辐射出的能量大小与实验测量到的能量大小相符, 解释了原本发绿光的ZnTe在掺入In后发出近红外光的根本原因. 关键词： ZnTe 半导体掺杂 近红外光 第一性原理     

碘化铯晶体中电子型色心的电子结构研究

运用以密度泛函理论为基础的相对论性离散变分方法(DV-Xα)模拟计算了完整的和含有F心、F+心以及F2心的碘化铯(CsI)晶体的电子结构,得到了含F心和F+心以及F2心的CsI晶体电子态密度分布以及它们可能产生的光学跃迁模式.计算结果表明,含F心和F2心的CsI晶体的禁带宽度明显变窄,F心和F2心的能级都出现在禁带中并且作为施主能级位于导带底部,利用过渡态理论计算得到其能级向Cs的5d轨道发生光学跃迁,能量跃迁值分别为1.69eV和1.15eV,该结果与实验结果完全一致,F+心没有能级出现在禁带中.计算结果从理论上成功地解释了碘化铯晶体经过辐照后电子型色心所产生的吸收带起源问题.     

N-S共掺杂金红石相TiO2电子结构与光学性质的第一性原理研究

采用基于第一性原理的平面波超软赝势方法研究N和S单掺杂以及N和S共掺杂金红石相TiO2的能带结构,态密度和光学性质.结果表明:N掺杂导致禁带宽度减小为1.43 eV,并且在价带上方形成了一条杂质能带;S掺杂导致费米能级上移靠近导带,直接带隙减小为0.32 eV;N和S共掺杂导致能带结构中出现了两条杂质能带,靠近导带的一条杂质能级距离导带底约0.35 eV,靠近价带的一条杂质能级距离价带顶约0.85 eV,杂质能级主要由N原子的2p轨道和S原子的3p轨道组成.N和S掺杂后不但使TiO2的吸收带产生红移,而且在可见光区具有较大的吸收系数,光催化活性增强.     

链间耦合对聚乙炔多链体系中电子极化子再激发态的影响

从拓展紧束缚模型出发,研究了链间耦合对反式聚乙炔多链体系中电子极化子再激发态的晶格位形、净电荷密度、局域能级波函数和态密度的影响。结果发现：对于两条链体系,当链间耦合很小（eV）时,注入到系统中的电子只会在第一条链上诱发产生一个晶格缺陷,形成电子极化子再激发态,这和单链体系是一致,而第二条链仍是二聚化基态。随着链间耦合的增大,第一条链上缺陷的局域度减少而第二条链上的缺陷局域度相应增加,直至两条链上的位形相同。对于多条链（5条链和6条链）体系,当耦合很小（0.05eV）时,电子极化子再激发态也只会存在于一条链上,当链间耦合较强时,极化子再激发态会在链间层次性地扩展开来,并不会出现多条链位形相同。从两条链的能级图上可以看到随着链间耦合的增大,体系的带隙不断的增大和电子态密度显示的是完全吻合的,体系的导电性减弱。通过分析两条链体系在eV和eV的能级态密度,发现链间耦合越强,则中间局域能级的态密度越小,最后没有中间局域态。     

Sn掺杂ZnO电子结构与光学性质的第一性原理研究

采用密度泛函理论框架下的第一性原理计算方法,利用广义梯度近似和Perdew-Burke-Ernzerdorf泛函,计算了不同Sn掺杂浓度下SZO(Sn∶ZnO)体系的电子结构与光学性质.研究了Sn掺杂浓度对SZO(Sn∶ZnO)的晶体结构、能带结构、电子态密度及光学性质的影响,并结合计算的能带结构和差分电荷密度对比分析了掺杂位置对计算结果的影响.研究结果表明,随着Sn掺杂浓度的增加,晶格常数c与a的比值变化很小,掺杂后晶胞没有发生畸变.掺杂体系的能量逐渐增大,稳定性减弱,且随着掺杂浓度的增加,带隙呈现先减小后增大的变化规律.掺杂后的SZO(Sn∶ZnO)成为间接带隙半导体,在导带底部附近出现了大量Sn原子贡献的导电载流子,明显提高了掺杂体系的电导率,并在费米能级附近与价带顶部之间出现一条由Sn原子贡献的杂质能级,能带结构呈现半填满状态,价带部分的电子态密度峰值向低能方向移动约1.5eV.同层掺杂的电子得失程度较大,带隙比相邻层掺杂和隔层掺杂时小.掺杂后吸收带边发生红移,材料对紫外光的吸收能力明显增强,介电常数虚部增大,主要跃迁峰向高能方向移动.计算结果表明SZO(Sn∶ZnO)是一种优良的透明导电薄膜材料.     

缺陷对钠在石墨烯上吸附性能的影响

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯和缺陷石墨烯吸附钠原子的电荷密度、吸附能、态密度和储存量.结果表明,本征石墨烯中,钠原子的最佳吸附位置为H位,缺陷石墨烯中,钠原子的最佳吸附位置为T_D位.缺陷石墨烯对钠原子的吸附能是-4.423 eV,约为本征石墨烯对钠原子吸附能的2.5倍;钠原子与缺陷石墨烯中的碳原子发生轨道杂化,而与本征石墨烯没有发生轨道杂化现象.缺陷石墨烯能够吸附10个钠原子,与本征石墨烯相比显著提高.因此,缺陷石墨烯有望成为一种潜在的储钠材料.     

硅（Si）原子高激发态能级自然辐射寿命的测量

能级的自然辐射寿命是确定跃迁几率和振子强度所需的重要参数. 目前，硅原子高激发态能级自然辐射参数的实验数据还很缺乏，因此本文运用时间分辨激光诱导荧光和激光烧蚀等离子体技术，测量了硅原子位于47351.55 ~ 63844.65 cm?1之间的14个高激发态能级的自然辐射寿命. 实验结果分布在8.7 ~ 43.4 ns之间，测量误差均小于10%，其中9个能级的结果属于首次报道. 本文结果与可靠的分支比数据相结合可确定相关能级的跃迁几率和振子强度实验值.     

Electronic Properties of Fullerenes for Two Kinds of Hybridized Orbits

The electronic hopping energies and the band structure of a neutral C₆₀ molecule for two kinds of hybridized orbits, sp³ and sp², are studied using the Wannier function method and tight-binding approximation model, respectively. By comparison, the sp³ hybridized type is superior in the band structure obtained by employing the Wannier function method. When the effective nuclear charge number Z = 1.148 the energy gap (t_lu-h_u), bandwidth (t_3g-a_g) and threshold value (t_3g-h_u) of the ionization energy are 1.70 eV, 11.35 eV and 7.69 eV, respectively. These results are in accord with the experimental values.     

Theory,preparation, properties and catalysis application in 2D graphynes-based materials

Carbon has three hybridization forms of sp⁻, sp²⁻ and sp³⁻, and the combination of different forms can obtain different kinds of carbon allotropes, such as diamond, carbon nanotubes, fullerene, graphynes (GYs) and graphdiyne (GDY). Among them, the GDY molecule is a single-layer two-dimensional (2D) planar structure material with highly π-conjugation formed by sp⁻ and sp²⁻ hybridization. GDY has a carbon atom ring composed of benzene ring and acetylene, which makes GDY have a uniformly distributed pore structure. In addition, GDY planar material have some slight wrinkles, which makes GDY have better self-stability than other 2D planar materials. The excellent properties of GDY make it attract the attention of researchers. Therefore, GDY is widely used in chemical catalysis, electronics, communications, clean energy and composite materials. This paper summarizes the recent progress of GDY research, including structure, preparation, properties and application of GDY in the field of catalysts.     

Identification of the phosphorus-doping defect in MgS as a potential qubit

The P_S defect is obtained by replacing one S atom with one P atom in the wide-bandgap semiconductor MgS. Based on first-principles calculations, the formation energy, defect levels, and electronic structure of the P_S defect in different charge states are evaluated. We predict that the neutral P_S⁰ and positively charged P_S⁺¹ are the plausible qubit candidates for the construction of quantum systems, since they maintain the spin conservation during optical excited transition. The zero-phonon lines at the P_S⁰ and P_S⁺¹ defects are 0.43 eV and 0.21 eV, respectively, which fall in the infrared band. In addition, the zero-field splitting parameter D of the P_S⁺¹ with spin-triplet is 2920 MHz, which is in the range of microwave, showing that the P_S⁺¹ defect can be manipulated by microwave. Finally, the principal values of the hyperfine tensor are examined, it is found that they decay exponentially with the distance from the defect site.     

Excited State Properties of Fluorine-Substituted Hexabenzocoronene： A Quantum-Chemical Characterization

The first fluorine-substituted hexabenzocoronene has been synthesized and its electronic structure and optical properties have been reported [Q. Zhang, et al., Org. Lett. 7 （2005） 5019]. In this letter, the electronic structure and excited state properties of the fluorine-substituted hexabenzocoronene are studied with quantum chemistry method as well as the transition and the charge difference densities. The transition densities show the orientations and strength of the dipole moments and the charge difference densities reveal the orientation and results of the intramolecular charge transfer. The calculated transition energies and oscillator strengths are consistent with the experimental data, and the theoretical results of transition and charge difference densities are valuable to understanding the excited state properties of the fluorine-substituted hexabenzocoronene.     

First-principles study of structural and opto-electronic characteristics of ultra-thin amorphous carbon films

Most amorphous carbon(a-C)applications require films with ultra-thin thicknesses;however,the electronic structure and opto-electronic characteristics of such films remain unclear so far.To address this issue,we developed a theoretical model based on the density functional theory and molecular dynamic simulations,in order to calculate the electronic structure and opto-electronic characteristics of the ultra-thin a-C films at different densities and temperatures.Temperature was found to have a weak influence over the resulting electronic structure and opto-electronic characteristics,whereas density had a significant influence on these aspects.The volume fraction of sp3 bonding increased with density,whereas that of sp2 bonding initially increased,reached a peak value of 2.52 g/cm³,and then decreased rapidly.Moreover,the extinction coefficients of the ultra-thin a-C films were found to be density-sensitive in the long-wavelength regime.This implies that switching the volume ratio of sp2 to sp3 bonding can effectively alter the transmittances of ultra-thin a-C films,and this can serve as a novel approach toward photonic memory applications.Nevertheless,the electrical resistivity of the ultra-thin a-C films appeared independent of temperature.This implicitly indicates that the electrical switching behavior of a-C films previously utilized for non-volatile storage applications is likely due to an electrically induced effect and not a purely thermal consequence.     

过渡区p型氢化硅氧薄膜结构和光电特性的研究

采用射频等离子体增强化学气相沉积技术,利用二氧化碳(CO_2)、氢气(H_2)、硅烷(SiH_4)和乙硼烷(B_2H_6)作为气源,制备出一系列p型氢化硅氧薄膜.利用拉曼光谱、傅里叶变换红外光谱和暗电导测试,研究了不同二氧化碳流量对薄膜材料结构和光电特性的影响,获得了从纳米晶相向非晶相转变的过渡区P层.研究表明:随着二氧化碳流量从0增加到1.2 cm~3·min~(-1),拉曼光谱的峰值位置从520 cm~(-1)逐渐移至480 cm~(-1).材料红外光谱表明,随着二氧化碳流量的增加,薄膜中的氧含量逐渐增加,氢键配置逐渐由硅单氢键转换为硅双氢键.P层SiO:H薄膜电导率从3S/cm降为8.3×10~(-6)S/cm.所有p型SiO:H薄膜的光学带隙(Eopt)都在1.82—2.13 eV之间变化.在不加背反射电极的条件下,利用从纳米晶相向非晶相转变的过渡区P层作为电池的窗口层,且在P层和I层之间插入一定厚度的缓冲层,制备出效率为8.27%的非晶硅薄膜电池.     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

Effect of substrate bias on SE, XPS and XAES studies of diamond-like carbon films deposited by saddle field fast atom beam source

This paper reports the effect of positive substrate bias (V_s) varying from 0 to 180 V on the spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and X-ray Auger electron spectroscopy (XAES) studies of diamond-like carbon (DLC) films deposited using CH₄ gas as a feedstock into a saddle field fast atom beam (FAB) source. The values of optical constants like refractive index (n) and extinction coefficient (k) of the deposited DLC films were determined using a two phase model. The values of ‘n’ were found to fall in the range from 1.505 to 1.720 and ‘k’ from 0.03 to 0.125 by application of different values of V_s. Value of these optical constants were found to decrease with the increase of substrate bias up to 90 V and then increase beyond this value. Position of C 1s peak evaluated from XPS data was found to occur at 286.09±0.18 eV in DLC films deposited by application of different values of V_s. Observation of full width at half maximum (FWHM) (τ) value (1.928 eV at V_s=0 V, 2.0 eV at V_s=90 V and 1.89 eV at V_s=180 V) clearly hinted the existence of a point of inflection in the properties of DLC films deposited using FAB source this way. A parameter ‘D’ defined as the distance between the maximum of positive going excursion and the minimum of negative going excursion was calculated in the derivative XAES spectra. The values of ‘D’ evaluated from XAES data for DLC films were found to be 14.8, 14.5 and 15.2 at V_s=0, 90 and 180 V, respectively. The sp² percentage was calculated for samples deposited this way and was found to be low and lie approximately at 5.6, 2.8, 2.3, 5.7 and 11.5 for different values of V_s=0, 50, 90, 150 and 180 V. The sp³ content percentage and sp³/sp² ratio was found to be 94.4 and 16.7, 97.7 and 42.5 at V_s=0 and 90 V, respectively. Beyond V_s=90 V these values started decreasing. Mainly, a point of inflection in all the properties of DLC films studied over here at around 90 V of applied substrate bias has been observed, which has been explained on the basis of existing theories in the literature.     

类金刚石薄膜在硅基底上的沉积及其热导率

采用分子动力学方法模拟了碳在晶体硅基底上的沉积过程, 并分析计算了所沉积的类金刚石薄膜的面向及法向热导率. 对沉积过程的模拟表明, 薄膜密度及sp³杂化类型的碳原子所占比例均随沉积高度的增加而减小, 在碳原子以1 eV能量垂直入射的情况下, 在硅基底上沉积的薄膜密度约为2.8 g/cm³, sp³杂化类型的碳原子所占比例约为22%, 均低于碳在金刚石基底上沉积的情况. 采用Green-Kubo方法, 计算了所沉积类金刚石薄膜的热导率, 其面向热导率可以达到相同尺寸规则金刚石晶体的50%左右, 并且随着薄膜密度与sp³杂化类型碳原子所占比例的升高而升高.     

Excited State Properties of Fluorine-Substituted Hexabenzocoronene: A Quantum-Chemical Characterization

The first fluorine-substituted hexabenzocoronene has been synthesized and its electronic structure and optical properties have been reported [Q. Zhang, et al., Org. Lett.7 (2005) 5019]. In this letter, the electronic structure and excited state properties of the fluorine-substituted hexabenzocoronene are studied with quantum chemistry method as well as the transition and the charge difference densities. The transition densities show the orientations and strength of the dipole moments and the charge difference densities reveal the orientation and results of the intramolecular charge transfer. The calculated transition energies and oscillator strengths are consistent with the experimental data, and the theoretical results of transition and charge difference densities are valuable to understanding the excited state properties of the fluorine-substituted hexabenzocoronene.