Spontaneous emission spectrum of a three-level atom embedded in photonic crystal

The two models of three-level (one upper level and two lower levels, or two upper levels and one lower level) atom embedded in a double-band photonic crystal are adopted. The atomic transitions from the upper levels to the lower levels are assumed to be coupled by the same reservoir which are respectively the isotropic photonic band gap (PBG) modes, the anisotropic PBG modes and the free vacuum modes. The effects of the fine structure of the atomic ground state levels in the model with one upper level and two lower levels, and the quantum interferences in the model with two upper levels and one lower level on the spontaneous emission spectrum of an atom are investigated in detail. Most interestingly, it is shown that new spontaneous emission lines are produced from the fine splitting of atomic ground state levels in the isotropic PBG case. The quantum interferences induce additional narrow spontaneous lines near the transition from the empty upper level to the lower level.     

Study on optical gain of one-dimensional photonic crystals with active impurity

Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals. Numerical simulations demonstrate that the enhancement of stimulated radiation,as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap,are related to the negative imaginary part of the complex effective refractive index of doped layers.This means that the complex effective refractive index has a negative imaginary part,and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly.Therefore,the spontaneous emission can be enhanced,the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason,the group velocity close to the edges of band gap is very small or abnormal.     

Spontaneous emission spectrum of a four-level atom in a double-band photonic crystal

The spontaneous emission spectrum from a four-level atom in a double-band photonic crystal has been investigated.We use the model which assumes three atomic transitions. One of the transitions interacts with the free vacuum modes,and the other two transitions couple to the modes of the isotropic photonic band gap (PBG), the anisotropic PBG and another free vacuum. The effects of the fine structure of the lower levels on the spontaneous emission spectrum of an atom are investigated in detail in the three cases. New features of four (two) transparencies with two (one) spontaneous emission peaks, resulting from the fine structure of the lower levels of an atom, are predicted in the case of isotropic PBG modes.     

Controllable Photonic Band Gap and Defect Mode in a 1D CO2-Laser Optical Lattice

We propose a new method to form a novel controfiable photonic crystal with cold atoms and study the photonic band gap （PBG） of an infinite 1D CO2-laser optical lattice of SSRb atoms under the condition of quantum coherence. A significant gap generated near the resonant frequency of the atom is founded and its dependence on physical parameters is also discussed. Using the eigenquation of defect mode, we calculate the defect mode when a defect is introduced into such a lattice. Our study shows that the proposed new method can be used to optically probe optical lattice in situ and to design some novel and controllable photonic crystals.     

Absorption Spectra of a Three-Level Atom Embedded in a PBG Reservoir

We introduce the ‘decay rate＇ terms into the density matrix equations of an atom embedded in a photonic band gap （PBG） reservoir successfully. By utilizing the master equations, the probe absorption spectra and the refractivity properties of a three-level atom in the PBG reservoir are obtained. The interaction between the atom and the PBG reservoir as well as the effects of the quantum interference on the absorption of the atom has also been taken into account. It is interesting that two different types of the anomalous dispersion relations of refractivity are exhibited in one dispersion line. The methodology used here can be applied to theoretical investigation of quantum interference effects of other atomic models embedded in a PBG reservoir.     

Probe spectrum of a four-level atom in a double-band photonic crystal

In this paper, the probe absorption spectrum of an atom in a double-band photonic crystal have been studied. In the modes, we assume that one of the two atomic transitions in a Λ-type atomic system is interacting with free vacuum modes, and another transition is interacting with free vacuum modes, isotropic photonic band gap (PBG) modes and anisotropic PBG modes, separately. The effects of the fine structure of the atomic lower levels on the probe absorption spectrum are investigated in detail in the three cases. The most interesting thing is that the two (four) transparencies at one (two) probe absorption peak(s), caused by the fine structure of the lower levels of an atom, are predicted in the case of isotropic PBG modes.     

The spontaneous emission of an excited atom embedded in photonic crystals with two atomic position-dependent bands

The spontaneous emission of an excited atom embedded in photonic crystals with two atomic position-dependent bands is investigated.The distribution of the density of states between two bands depends on the atomic position in a unit cell of the photonic crystal and is described with an atomic position-dependent parameter.The result shows that the emitted field and the time evolution of the upper-level population are affected by the atomic position and the gap width.The spontaneous emission spectrum in free space can be shifted and narrowed with the photonic reservoir and the gap width.     

Transmission properties of one-dimensional photonic crystals containing double-negative and single-negative materials

The transmission properties of one-dimensional photonic crystals containing double-negative and single- negative materials are studied theoretically.A special kind of photonic band gap is found in this structure. This gap is invariant with scaling and insensitive to thickness fluctuation.But when changing the ratio of the thickness of two media,the width of the gap could be enlarged.The defect modes are analyzed by inducing a linear defect layer in the structure.It is found that the number of defect modes will increase when the thickness of the defect layer becomes larger.     

Compact and broadband waveguide taper based on partial bandgap photonic crystals

Partial bandgap characteristics of parallelogram lattice photonic crystals are proposed to suppress the radiation modes in a compact dielectric waveguide taper so as to obtain high transmittance in a large wavelength range. Band structure of the photonic crystals shows that there exists a partial bandgap, The photonie crystals with partial bandgap are then used as the cladding of a waveguide taper to reduce the radiation loss efficiently. In comparison with the conventional dielectric taper and the complete bandgap photonic crystal taper, the partial bandgap photonic crystal taper has a high transmittance of above 85% with a wide band of 170 nm.     

Tolerance of Photonic Crystal Impurity Bands to Disorder of Defects in Coupled Cavity Waveguides

We investigate the tolerance of photonic crystal impurity bands to the disorder of defects in one-dimensional coupled cavity waveguides. Although impurity bands formed by defect modes close to the air band are quasiflat in the absence of disorder, they are easily deteriorated when disorders are introduced into defects. In contrast, impurity bands created by defect modes near the dielectric band are less sensitive to disorder in the defect size. It is found that the sensitivity of defect mode frequency to defect size and the quality factor of defect modes are two crucial factors in determining the tolerance of impurity bands to the disorder of defects.     

Optical Tamm States in Dielectric Photonic Crystal Heterostructure

We investigate one-dimensional dielectric photonic crystal and optical Tamm modes formed by superposition of two band gaps and find that this kind of mode can be explained by the single negative materials tunnelling effect. A finite-size dielectric photonic band gap can mimic one kind of effective single negative material and this property sensitively depends on the frequency location in stop-band regions and surface termination and so on. The effective impedance match and effective phase match give the precise position of the optical Tamm mode. Complete transparency via tunnelling is achieved by two opaque media and demonstrates the validity of our approach.     

Spontaneous emission from a microwave-driven four-level atom in an anisotropic photonic crystal

The spontaneous emission from a microwave-driven four-level atom embedded in an anisotropic photonic crystal is studied. Due to the modified density of state(DOS) in the anisotropic photonic band gap(PBG) and the coherent control induced by the coupling fields, spontaneous emission can be significantly enhanced when the position of the spontaneous emission peak gets close to the band gap edge. As a result of the closed-loop interaction between the fields and the atom,the spontaneous emission depends on the dynamically induced Autler–Townes splitting and its position relative to the PBG.Interesting phenomena, such as spectral-line suppression, enhancement and narrowing, and fluorescence quenching, appear in the spontaneous emission spectra, which are modulated by amplitudes and phases of the coherently driven fields and the effect of PBG. This theoretical study can provide us with more efficient methods to manipulate the atomic spontaneous emission.     

Effective permittivity and permeability of one-dimensional dielectric photonic crystal within a band gap

We take a finite dielectric photonic crystal as a homogeneous slab and have extracted the effective parameters. Our systematic study shows that the effective permittivity or permeability of dielectric photonic crystal is negative within a band gap region. This means that the band gap might act as ε-negative materials （ENMs） with ε 〈 0 and μ 〉 0, or μ-negative materials （MNMs） with ε 〉 0 and μ 〈 0. Moreover the effective parameters sensitively rely on size, surface termination, symmetry, etc. The effective parameters can be used to design full transmission tunnelling modes and amplify evanescent wave. Several cases are studied and the results show that dielectric photonic band gap can indeed mimic a single negative material （ENM or MNM） under some restrictions.     

Fabrication of Two-Dimensional Photonic Crystals with Triangular Rods by Single-Exposure Holographic Lithography

We demonstrate a single-exposure holographic fabrication of two-dimensional photonic crystal with round- cornered triangular ＇atoms＇ arranged in a triangular lattice. Simulation results show that double absolute photonic band gaps exist in this structure. Our experimental results show that holographic lithography can be used to fabricate photonic crystals not only with various lattice structures but also with various kinds of structures of the atoms, to obtain absolute band gaps or a particular band gap structure. Furthermore, the single-exposure holographic method not only makes the fabrication process simple and convenient but also makes the structures of the atoms more perfect.     

Effect of a Two-Dimensional Periodic Dielectric Background on Complete Photonic Band Gap in Complex Square Lattices

A two-dimensional photonic crystal model with a periodic square dielectric background is proposed. The photonic band modulation effects due to the two-dimensional periodic background are investigated in detail. It is found that periodic modulation of the dielectric background greatly alters photonic band structures, especially for the Epolarization modes. The number, width and position of the photonic band gaps sensitively depend on the dielectric constants of the two-dimensional periodic background. Complete band gaps are found, and the dependence of the widths of these gaps on the structural and material parameters of the two alternating rods/holes is studied.     

Two-dimensional ring-type photonic crystals in the near-infrared region

We propose a ring photonic crystal working in the near infrared region, where the air holes in the background material GaAs are arranged to form a series of rings. We find that the band gaps do not depend on the incident direction, and only a small number of rows are needed to create a frequency gap in the transmission spectrum. The transmission spectra of both P and S polarizations show that there is a complete bandgap in the hexagonal ring photonic crystals and the ratio of gap width to mid-gap frequency is as high as 11%.     

Analysis of two-dimensional photonic band gap structure with a rhombus lattice

The relative band gap for a rhombus lattice photonic crystal is studied by plane wave expansion method and high frequency structure simulator(HFSS)simulation.General wave vectors in the first Briliouin zone are derived.The relative band gap as a function of air-filling factor and background material is investigated,respectively,and the nature of photonic band gap for different lattice angles is analyzed by the distribution of electric energy.These results would provide theoretical instruction for designing optical integrated devices using photonic crystal with a rhombus lattice.     

Structural,electronic,and magnetic behaviors of 5d transition metal atom substituted divacancy graphene:A first-principles study

Structural, electronic, and magnetic behaviors of 5d transition metal(TM) atom substituted divacancy(DV) graphene are investigated using first-principles calculations. Different 5d TM atoms(Hf, Ta, W, Re, Os, Ir, and Pt) are embedded in graphene, these impurity atoms replace 2 carbon atoms in the graphene sheet. It is revealed that the charge transfer occurs from 5d TM atoms to the graphene layer. Hf, Ta, and W substituted graphene structures exhibit a finite band gap at high symmetric K-point in their spin up and spin down channels with 0.783 μB, 1.65 μB, and 1.78 μB magnetic moments,respectively. Ir and Pt substituted graphene structures display indirect band gap semiconductor behavior. Interestingly, Os substituted graphene shows direct band gap semiconductor behavior having a band gap of approximately 0.4 e V in their spin up channel with 1.5 μB magnetic moment. Through density of states(DOS) analysis, we can predict that d orbitals of 5d TM atoms could be responsible for introducing ferromagnetism in the graphene layer. We believe that our obtained results provide a new route for potential applications of dilute magnetic semiconductors and half-metals in spintronic devices by employing 5d transition metal atom-doped graphene complexes.     

Energy Squeeze of Ultrashort Light Pulse by Kerr Nonlinear Photonic Crystals

Self-phase modulation can efficiently shape the spectrum of an optical pulse propagating along an optical material with Kerr nonlinearity. In this work we show that a one-dimensional Kerr nonlinear photonic crystal can impose anomalous spectrum modulation to a high-power ultrashort light pulse. The spectrum component at the photonic band gap edge can be one order of magnitude enhanced in addition to the ordinary spectrum broadening due to self-phase modulation. The enhancement is strictly pinned at the band gap edge by changing the sample length, the intensity or central wavelength of the incident pulse. The phenomenon is attributed to band gap induced enhancement of light-matter interaction.     

First principle study of nitrogen vacancy in aluminium nitride

In the framework of density functional theory, using the plane-wave pseudopotential method, the nitrogen vacancy （VN） in both wurtzite and zinc-blende AlN is studied by the supercell approach. The atom configuration, density of states, and formation energies of various charge states are calculated. Two defect states are introduced by the defect, which are a doubly occupied single state above the valance band maximum （VBM） and a singly occupied triple state below the conduction band minimum （CBM） for wurtzite AlN and above the CBM for zinc-blende AlN. So VN acts as a deep donor in wurtzite AlN and a shallow donor in zinc-blende AlN. A thermodynamic transition level E（3＋/＋） with very low formation energy appears at 0.7 and 0,6eV above the VBM in wurtzite and zinc-blende structure respectively, which may have a wide shift to the low energy side if atoms surrounding the defect are not fully relaxed. Several other transition levels appear in the upper part of the bandgap. The number of these levels decreases with the structure relaxation. However, these levels are unimportant to AlN properties because of their high formation energy.