Ce和O空位共掺杂TiO_2的电子结构与光学性质

采用基于密度泛函理论加U的计算方法,研究了Ce和O空位单(共)掺杂锐钛矿相TiO_2的电子结构和光吸收性质.计算结果表明,Ce和O空位共掺杂TiO_2的带隙中出现了杂质能级,且带隙窄化为2.67 eV,明显比纯TiO_2和Ce,O空位单掺杂TiO_2的要小,因而可提高TiO_2对可见光的响应能力,使TiO_2的光吸收范围增加.光吸收谱显示,掺杂后TiO_2的光吸收边发生了显著红移;在400.0—677.1 nm的可见光区,共掺杂体系的光吸收强度显著高于纯TiO_2和Ce单掺杂TiO_2,而略低于O空位单掺杂TiO_2.此外,Ce掺杂TiO_2中引入O空位后,TiO_2的导带边从-0.27 eV变化为-0.32 eV,这表明TiO_2的导带边的还原能力得到了加强.计算结果为Ce和O空位共掺杂TiO_2在可见光光解水方面的进一步研究提供了有力的理论依据.     

Oxygen-vacancy-related high-temperature dielectric relaxation and electrical conduction in 0.95K0.5Na0.5NbO3-0.05BaZrO3 ceramic

The crystal structure and dielectric properties of 0.95K_0.5Na_0.5NbO₃-0.05BaZrO₃ (KNN-BZ) ceramic have been investigated by X-ray diffraction and dielectric measurement. A rhombohedral distortion was caused and the dielectric permittivity near Curie temperature was significantly enhanced by introducing BZ into KNN. The dielectric and conductivity properties of the sample were studied by using AC impedance spectroscopy and universal dielectric relaxation law in detail. The typical high-temperature dielectric relaxation process was confirmed to be related to the oxygen vacancies inside the ceramic. The effect of lattice distortion on the activation energy for oxygen vacancy migration in KNN-BZ was discussed by comparing with KNN and KNN-BaTiO₃.     

Energetics of carbon and nitrogen impurities and their interactions with vacancy in vanadium

We studied the energetic behaviors of interstitial and substitution carbon(C)/nitrogen(N) impurities as well as their interactions with the vacancy in vanadium by first-principles simulations. Both C and N impurities prefer the octahedral site(O-site). N exhibits a lower formation energy than C. Due to the hybridization between vanadium-d and N/C-p, the N-p states are located at the energy from-6.00 e V to-5.00 e V, which is much deeper than that from-5.00 e V to-3.00 e V for the C-p states. Two impurities in bulk vanadium, C–C, C–N, and N–N can be paired up at the two neighboring Osites along the 111 direction and the binding energies of the pairs are 0.227 e V, 0.162 e V, and 0.201 e V, respectively.Further, we find that both C and N do not prefer to stay at the vacancy center and its vicinity, but occupy the O-site off the vacancy in the interstitial lattice in vanadium. The possible physical mechanism is that C/N in the O-site tends to form a carbide/nitride-like structure with its neighboring vanadium atoms, leading to the formation of the strong C/N–vanadium bonding containing a covalent component.     

氧空穴导致二氧化钒低温相带隙变窄

具有一定能量的光照导致低温绝缘二氧化钒(VO_2)发生绝缘体金属转变.本文通过密度泛函理论的Heyd-Scuseria-Ernzerhof杂化泛函方法对含氧空穴的低温绝缘VO_2非磁M1相进行第一性原理研究.研究发现,含氧空穴的M1的晶格参数几乎不变,但氧空穴附近的长的V—V键长却变短了.进一步研究发现,尽管纯的非磁M1的带隙是0.68 eV,但含O1和O2位的氧空穴非磁M1带隙分别为0.23 eV和0.20 eV,同时含有O1和O2位氧空穴非磁M1带隙为0.15 eV,这很好地解释了实验结果.     

Towards understanding the carbon trapping mechanism in copper by investigating the carbon-vacancy interaction

We propose a vacancy trapping mechanism for carbon-vacancy (C-V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C-V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n=1,2,3,4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of 0.21 eV. With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically, the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.     

Si中B-空位复合缺陷的电子结构

本文对Si中B-空位(BV)缺陷的电子结构,提出一个“五个空杂化轨道”的简化理论模型。用紧束缚的Koster-Slater格林函数方法,算得的空位最近邻原子的超精细相互作用常数,以及电子波函数在远离空位的几率分布都同电子-核子双共振实验结果相符合。理论确定的深能级位置同深能级瞬态谱的实验值相比拟。协调了现有BV°缺陷的实验资料,支持了B原子位于空位的次近邻,BV°缺陷处于B^-V⁺电荷态的结论。 关键词：     

An LCAO-MO treatment of the vacancy in diamond

A simple molecular orbital treatment which has previously been applied successfully to the substitutional nitrogen donor and boron acceptor in diamond is here applied to the vacancy in diamond. Localized levels associated with the vacancy are found in the gap and an outward relaxation of the four neighbors surrounding the vacancy is predicted. Jahn-Teller effects are found to give stabilization energies of ～0.5 eV. A critical comparison to the ‘defect molecule’ approach of Coulson and Kearsley and Yamaguchi is included.     

KCdF3:Cr3+晶体EPR零场分裂参量与电荷补偿效应的研究

按照叠加模型与EPR零场分裂参量的三阶微扰理论,建立了KCdF₃:Cr³⁺晶体EPR零场分裂参量与四角对称Cr³⁺-Cd²⁺缺陷中心局域结构之间的定量关系.证实Cd²⁺空位与晶格畸变的存在,我们获得:围绕Cr³⁺离子的六个F^-配体分别向中心Cr³⁺移动Δ₁=0.00294nm,Δ₂=0.0010nm,Δ₃=0.0028nm (参见图2).EPR零场分裂参量与实验一致表明:Cd²⁺空位与晶格畸变的假设是合理的.尽管四角晶场主要来自Cd²⁺空位,但晶格畸变的贡献不可忽略.     

Vacancy-assisted diffusion in silicon: a three-temperature-regime model

In this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized with an analytical model. In the intermediate temperature regime the divacancy dissociation plays a key role and an effective migration energy E{v}{m} approximately 2 eV is predicted, computed from either full ab initio values or mixed with experimental ones. The exact position of this temperature regime strongly depends on vacancy concentration. Previous contradictory experimental results are revisited using this viewpoint.     

低能原子沉积在Pt(111)表面的分子动力学模拟

采用嵌入原子方法的原子间相互作用势,利用分子动力学方法模拟了六种贵金属原子(Ni,Pd,Pt,Cu,Ag,Au)分别在Pt(111)表面低能沉积的动力学过程.结果表明:随着入射能量从0.1eV升高到200eV,基体表面原子是按层迁移的,沉积过程对基体表面的影响和沉积原子在基体表层的作用均存在两个转变能量(ET1≈5eV,ET2≈70eV).当入射能量低于5eV时,基体表面几乎没有吸附原子和空位形成,沉积原子在基体表层几乎没有注入产生;当入射能量在5—70eV范围内时,沉积原子在基体表层有注入产生,其注入深度小于两个原子层,即为亚注入,此时吸附原子主要由基体表层原子形成,基体表面第三层以下没有空位形成;当入射能量高于70eV时,沉积原子的注入深度大于两个原子层,将会导致表面以下第三层形成空位,并且空位产额随入射能量的升高而急剧增加.基于分子动力学模拟的结果,对低能沉积作用下的薄膜生长以及最优沉积参数的选择进行了讨论.     

Relaxed energy and structure of edge dislocation in iron

With modified analytical embedded-atom method and molecular dynamics simulation, this paper simulates the strain energy and the equilibrium core structure of a<100> edge dislocation in BCC metal iron on atomistic scale. In addition, the trapping effect of dislocation on vacancy is investigated as well. The results show that the equilibrium dislocation core is quite narrow and has a C_2v symmetry structure. Calculated strain energy E_s of the dislocation is a linear function of ln (R/2b) while R≥5.16 Å (1 Å=0.1 nm), in excellent agreement with the elasticity theory prediction. Determined core radius and energy are 5.16 Å and 0.62 eV/Å, respectively. The closer the vacancy to the dislocation line is, the lower the vacancy formation energy is, this fact implies that the dislocation has a trend to trap the vacancy, especially for a separation distance of the vacancy from dislocation line being less than two lattice constants.     

用第一性原理研究K空位对KDP晶体激光损伤的影响

 用基于密度泛函理论及超软赝势的第一性原理研究了KH­­­₂PO₄(KDP)晶体中K空位的电子结构、形成能及驰豫构型。讨论了K空位形成后电荷密度的重新分布、相应的电子态密度和能带结构等性质。计算得到中性K空位的形成能为6.5 eV, 远小于间隙K原子点缺陷形成能13.07 eV。K空位的存在使晶胞体积增大, 分别沿结晶学轴a方向增大近0.8%, b方向增大近0.87%, c方向增大近1.2%，同时使与之配位的8个氧原子发生较大位移，使这8个氧形成的空腔体积增大近3.2%。空腔体积的增大不仅促进了各种点缺陷的扩散迁移，而且有利于其它杂质原子的填隙。K原子迁移率的增大会引起离子电导率的增大，因而会降低KDP的激光损伤阈值，因此从这个方面讲，K空位的存在是不利的。但是如果能从实验上（如热退火）利用K空位所造成的扩散通道排出或改善缺陷结构，则可提高KDP晶体的光学质量。     

Calculation of Vacancy Induced Properties in FCC Metals Using an Alternative Lattice Dynamical Model

Combining the conventional Kanzaki's lattice statics method with an alternative lattice dynamical model called decoupling transformation, a new approach is proposed to calculate the vacancy induced properties in FCC metals. This approach has the advantage over the traditional least-square fit approach in the way that all the model parameters are linearly independent and so it can avoid the problem of non-uniqueness in dynamical model parameters when interactions with more distant atoms are taken into account by fitting to the experimental phonon frequencies only. Numerical results on the lattice dynamical properties such as phonon dispersion curves and interatomic interaction force constants and the vacancy induced properties such as the atomic displacements, lattice relaxation energy, divacancy interaction energy and relaxation volume are obtained specifically for two similar FCC metals, to wit, Cu and Ni and are compared with previous calculations. It is concluded that the interatomic interactions up to the fourth nearest neighbours are already good enough for describing both the lattice vibrational and vacancy induced properties for both metals.     

第一性原理计算研究立方氮化硼空位的电学和光学特性

对立方氮化硼的空位进行了基于密度泛函理论框架下的第一性原理平面波超软赝势方法的研究. 通过对总能量、能带结构、态密度及电子密度分布图的分析发现, B空位相比起N空位更加稳定. 并且空位仅影响最近邻原子的电子分布, 空位浓度的增加使禁带宽度逐渐变窄. 从复介电函数和光学吸收谱分析中发现, 随着空位浓度的增加, 立方氮化硼在深紫外区的吸收逐渐减弱. 并且B空位还导致在可见光区域出现明显的吸收带. 关键词： 立方氮化硼 空位 第一性原理 电光学特性     

闪锌矿结构AlSb空位缺陷性质的第一性原理研究

采用基于密度泛函理论(DFT)第一性原理的平面波超软赝势方法，计算含有锑空位和铝空位的电子结构，发现空位引起周围原子弛豫，晶体结构发生畸变。在此基础上研究了空位缺陷对闪锌矿型AlSb体系电子结构的影响，结果表明，铝空位缺陷使锑化铝费米能级降低，带隙变窄；而锑空位缺陷则使锑化铝费米能级升高，带隙变窄，同时，锑化铝的半导体类型由p型变为n型。对光学性质的研究发现，由于空位的引入使其邻近原子电子结构发生变化，使得空位缺陷系统光学性质的变化主要集中在低能量区域。     

闪锌矿结构AlSb空位缺陷性质的第一性原理研究

采用基于密度泛函理论(DFT)第一性原理的平面波超软赝势方法,计算含有锑空位和铝空位的AlSb电子结构,发现空位引起周围原子弛豫,晶体结构发生畸变.在此基础上研究了空位缺陷对闪锌矿型AlSb体系电子结构的影响,结果表明,铝空位缺陷使锑化铝费米能级降低,带隙变窄;而锑空位缺陷则使锑化铝费米能级升高,带隙变窄,同时,锑化铝的半导体类型由p型变为n型.对光学性质的研究发现,由于空位的引入使其邻近原子电子结构发生变化,使得空位缺陷系统光学性质的变化主要集中在低能量区域.     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Zn吸附到含有氧空位(VO)以及羟基(-OH)的锐钛矿相TiO2(101)表面电子结构的第一性原理计算

基于密度泛函理论的第一性原理平面波超软赝势方法, 计算了Zn吸附到TiO₂(101)清洁表面、含有氧空位(V_O)的缺陷表面以及既含有氧空位(V_O)又含有羟基(-OH)表面的能量、Mulliken重叠布居数以及电子结构, 并找到了Zn在每种表面的最稳定结构(分别为模型(c), 模型(aI)以及模型(aII)). 通过对三种表面稳定结构的分析、对比发现: 首先, Zn原子吸附到清洁TiO₂(101)表面上, 主要与表面氧相互作用, 形成Zn–O共价键; 其次, 当Zn原子吸附到缺陷表面时, 吸附能减小到-1.75 eV, 说明Zn更容易吸附到氧空位上(模型(aI)); 最后, 纵观表面模型的能带结构以及态密度图发现, -OH的引入并没有引进新的杂质能级, Zn吸附此表面, 即Zn-TiO₂-V_O-OH, 使得禁带宽度缩短到最小(1.85 eV), 从而有望提高TiO₂的光催化活性. 关键词： 密度泛函理论 氧空位 羟基 Zn原子     

钠在空位石墨烯上吸附性能的研究

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯和空位石墨烯吸附钠原子的电荷密度、吸附能、态密度和储存量.结果表明,在两种石墨烯中,钠原子的最佳吸附位置都为H位.空位石墨烯对钠原子的吸附能是-2. 46 eV,约为本征石墨烯对钠原子吸附能的3. 4倍;钠原子与空位石墨烯中的碳原子发生轨道杂化,而与本征石墨烯没发生轨道杂化现象.存在一个空位的石墨烯能够吸附5个钠原子,与本征石墨烯相比显著提高.因此,空位石墨烯有望成为一种潜在的储钠材料.     

锆掺杂二氧化铀中氧缺陷扩散机制的密度泛函计算研究

应用基于量子力学的密度泛函计算和过渡态搜寻的CI-NEB方法,研究了锆掺杂前后二氧化铀晶格中氧空位和氧间隙本征缺陷的扩散机理,计算了扩散路径和扩散能垒。计算结果表明,锆掺杂使得氧空位缺陷<100>方向的扩散能垒降低了0.40 eV,氧间隙交换机制的扩散能垒降低了0.07 eV。锆掺杂后,氧空位远低于氧间隙缺陷的扩散能垒。最后分析了扩散过程中氧原子和金属原子之间的键长,说明锆掺杂导致点缺陷扩散能垒降低与晶格畸变密切相关。Oxygen vacancy and interstitial diffusion mechanisms in uranium dioxide doped with zirconium are investigated by the density functional theory calculations. The migration pathways and barriers are identified using the climbing-image nudge elastic band (CI-NEB) method. It is found that the vacancy migration barrier along the <100> direction decreases by about 0.40 eV, while the indirect interstitial migration barrier decreases by about 0.07 eV in the zirconium doped uranium dioxide. The oxygen vacancy migration barrier is far lower than the oxygen interstitial migration barrier in the uranium dioxide doped with zirconium. Based on the analysis of bond length of local structures during the migration of oxygen atoms, it is concluded that the lattice distortion may be responsible for the reduction of oxygen migration barrier.