渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.     

高绒度掺硼氧化锌透明导电薄膜用作非晶硅太阳电池前电极的研究

将自行研制的具有优异陷光能力的掺硼氧化锌用作p-i-n型非晶硅太阳电池的前电极,并且将传统商业用U型掺氟二氧化锡作为对比电极.相比表面较为平滑的掺氟二氧化锡,掺硼氧化锌表面大类金字塔的绒面结构会在本征层生长过程中触发阴影效应,形成大量的高缺陷材料区和漏电沟道,进而恶化电池的开路电压和填充因子.在不修饰掺硼氧化锌表面形貌的情况下,通过调节非晶硅本征层的沉积温度来消弱高绒度表面形貌引起的这种不利影响,对应的电池开路电压和填充因子均出现提升.在仅有铝背电极的情况下,在本征层厚度为200 nm的情况下,以掺硼氧化锌为前电极的非晶硅太阳电池转换效率达7.34%(开路电压为0.9 V,填充因子为70.1%,短路电流密度11.7 mA/cm2).     

Laser Sintering of a Porous TiO2 Film in Dye-Sensitized Solar Cells

We investigate the possibility of modifying the porous structure of TiO₂ films in dye-sensitized solar cells (DSSC) in its sintering by a pulsed Nd:YAG laser (wavelength 1064 nm) to improve their parameters and characteristics. Sintering at various pulse energies enabled a porosity within the range of 0.45 to 0.20. The efficiency of the energy conversion in experimental DSSC specimens with TiO₂ films sintered by an optimum laser-radiation pulse energy of 150 mJ was 20–25% higher than that of commercial solar cells.     

Investigation of Interfacial Charge Separation at PbS QDs/(001) TiO2 Nanosheets Heterojunction Solar Cell

In the recent years, the heterojunction solar cells based on quantum dots (QDs) have attracted attention due to strong light absorbing characteristics and the size effect on the bandgap tuning. This paper reports on the kinetics of interfacial charge separation of PbS QDs/(001) TiO₂ nanosheets heterojunction solar cells. PbS QDs are deposited using a bifunctional linker molecule on two different TiO₂ films, i.e., TiO₂ nanosheets (with 001 dominant exposed facet) and TiO₂ nanoparticles (with 101 dominant exposed facet). Upon bandgap excitation, electrons are transferred from the PbS QDs conduction band to the lower lying conduction band of TiO₂. Based on the ultrafast pump‐probe laser spectroscopy technique, the kinetics of charge separation is scrutinized at the PbS/TiO₂ interface. The interfacial charge separation at PbS/TiO₂ nanosheets films made of (001) dominant exposed facets is five times faster than that on (101) dominant exposed facets TiO₂ nanoparticles. The quantum yields for charge injection are higher for the (001) TiO₂ nanosheets than the (101) TiO₂ nanoparticles due to enhanced interfacial interaction with (001) surface compared to the (101) nanoparticles. The superior interfacial charge separation at PbS/(001) nanosheets respect to PbS/(101) nanoparticles is consistent with the higher photocurrent and enhanced power conversion efficiency in the PbS QDs/(001) TiO₂ heterojunction solar cell. The use of (001) TiO₂ nanosheets can be a better alternative to conventional mesoporous TiO₂ films in QD heterojunction solar cells and perovskites‐based heterojunction solar cells.     

Amorphous thin-film solar cells

This report gives an overview of the present status of thin-film solar cells made from hydrogenated amorphous semiconductors (a-Si:H, a-Ge:H) together with new results emphasizing the physics of amorphous materials and devices. Preparation techniques, quality and performances of a-Si:H and a-Ge:H films as well as solar cells with pin structures are reviewed. Dark and light current-voltage I(V) characteristics and spectral response measurements give information about photovoltaic diodes and allow further insights into the physics of these kinds of materials and solar cells. Simulation calculations and device modelling of such solar cells have increased our understanding of amorphous semiconductors and their devices. The introduction of pin/pin stacked and/or tandem structures has improved the long-term stability and conversion efficiency of amorphous solar cells.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Water Evaporation Induced Conversion of CuSe Nanoflakes to Cu2−xSe Hierarchical Columnar Superstructures for High‐Performance Solar Cell Applications

In this work, a facile and low‐temperature water evaporation approach to prepare columnar superstructures consisting of face centered cubic (fcc) Cu_2?xSe nanoflakes stacked along 〈111〉 direction is reported. Formation of such unique stacked nanoflake assemblies is resulted from oriented attachment of isolated hexagonal CuSe nanoflakes along the 〈001〉 direction with a ripening effect driven by solvent evaporation, and then followed by a phase conversion into fcc Cu_2?xSe. Evolution from hexagonal CuSe nanoflakes to fcc Cu_2?xSe columnar superstructures results in obvious red‐shift of band‐gap absorption edge from 670 to 786 nm and dramatically decreased Raman resonance band intensity of the Se–Se stretching mode at 259 cm^?1 due to the phase conversion and composition variation. Remarkably, the Cu_2?xSe columnar superstructures are employed as low‐cost and highly efficient counter electrodes (CEs) in quantum dot sensitized solar cells, exhibiting excellent electrocatalytic activity for polysulfide electrolyte regeneration. A ZnSe/CdSe cosensitized solar cell using the Cu_2?xSe CE shows a significant increase in fill factor and short‐current density (J_SC) and yields a 128% enhancement in power conversion efficiency as compared to the traditional noble metal Pt CE.     

A study of built-in potential ina-Si solar cells by means of back-surface reflected electroabsorption

The electroreflectance (ER) signal has been studied for the purpose of identifying the built-in field in practical amorphous silicon (a-Si∶H) solar cells. Through both theoretical and experimental considerations, it has been confirmed that the ER signal essentially comes from the light which is reflected at the back surface and hence experiences the internal electric field within thea-Si∶H layer. By analyzing the ER signal, which is really the back-surface reflected electroabsorption signal, the built-in potentialV _bcan be evaluated. This method has been applied to various types ofp-i-n junctiona-Si solar cells.V _bof a usual homojunction solar cell was about 0.85 V. Increases ofV _bby 50≈130mV have been found in heterojunction solar cells constructed withp-type amorphous silicon carbide (a-SiC∶H) and/orn-type microcrystalline silicon (μc-Si) as compared with homojunctionp-i-n solar cells. Moreover, a clear dependence ofV _bon the substrate materials has been observed. These experimental results are described in connection with cell performances.     

High-efficiency multicolour Q-switched Nd3+:KGd(WO4)2 laser

Energy output of 400 mJ, an order of magnitude higher than reported previously is obtained in aQ-switched flashlamp-pumped Nd³⁺:KGd(WO₄)₂ laser. No pronounced saturation of the output energy with respect to the pump energy is observed. Multiwavelength operation due to efficient Stokes conversion in the laser crystal is demonstrated.     

Enhanced multiple exciton generation in amorphous silicon nanowires and films

ABSTRACT

Multiple exciton generation (MEG) in nanometer-sized hydrogen-passivated silicon nanowires (NWs), and quasi two-dimensional nanofilms depends strongly on the degree of the core structural disorder as shown by the perturbative many-body quantum mechanics calculations based on the density functional theory simulations. Working to the second order in the electron–photon coupling and in the screened Coulomb interaction, we calculate quantum efficiency (QE), the average number of excitons created by a single absorbed photon, in the Si₂₉H₃₆ quantum dots (QDs) with crystalline and amorphous core structures, simple cubic three-dimensional arrays constructed from these QDs, crystalline and amorphous NWs, and quasi two-dimensional silicon nanofilms, also both crystalline and amorphous. Efficient MEG with QE ranging from 1.3 up to 1.8 at the photon energy of about 3E_g, where E_g is the electronic gap, is predicted in these nanoparticles except for the crystalline NW and crystalline film where QE ? 1. MEG in the amorphous nanoparticles is enhanced by the electron localisation due to structural disorder. Combined with the lower gaps, the nanometer-sized amorphous silicon NWs and films are predicted to have effective carrier multiplication within the solar spectrum range.     

Pressure and photo-induced phase transitions in sulphur investigated by Raman spectroscopy

Abstract

The phase transition of orthorhombic sulphur α-S₈ to a high pressure amorphous sulphur allotrope (a-S) has been investigated by Raman spectroscopy. The conversion is found to be induced by the absorption of laser light and can be discussed in terms of ring opening followed by cis-trans conversion of the dihedral angle of S₈ molecules. Laser energy and transition pressure are correlated due to the pressure tuned red shift of the absorption edge of α-S₈. The amorphous (a-S) phase is observed up to 15 GPa at laser intensities below 30μW/μm² at 514.5 and 488.0 nm. Above this threshold power a-S transforms into a second photo-induced phase (p-S), whose discrete Raman spectrum implies an ordered molecular and crystalline structure. By further increasing pressure crystalline S₆ can be created which is found to be the dominant molecular species at pressures above 10 GPa and low temperatures. A phase diagram in the range T < 300 K and p < 15 GPa is also presented.     

非晶硅太阳电池结构模拟设计

为了从理论上分析提高非晶硅太阳能电池的转化效率,运用微电子和光子结构分析一维器件模拟程序模拟非晶硅太阳电池a-SiC∶H/a-Si∶H/a-Si∶H结构,分析比较了不同前端接触透明导电层的功函数ФITO、禁带宽度、本征层厚度、掺杂浓度、缺陷态密度等因素对太阳电池性能的影响.模拟得到,在功函数达到5.1 eV,禁带宽度1.8 eV,本征层厚度265 nm等最优化条件下,非晶硅太阳能电池转化效率达到9.855%,比一般非晶硅太阳能电池转化效率高近2%.     

Mechanism and kinetics of the reversible transformation lda-hda of amorphous ice under pressure

An ultrasonic investigation of pressure-induced direct and reverse transformations lda-hda between the amorphous phases of low-and high-density ice is performed and the change in the shear modulus is determined. It is found that elastic softening of the amorphous network precedes both transformations, and the behavior of lda phase is similar to that of hexagonal 1h ice before amorphization. At the same time a number of features of the lda-hda transformation are due to the topological disordering of the amorphous phases, and the kinetics of the transformation is different from the standard behavior at a first-order phase transition and also from the compression kinetics of “ classic” glasses of the type a-SiO₂ and a-GeO2. It is shown that the difference in the behavior of the lda and hda amorphous phases under pressure can be attributed to characteristic features of their spectra of low-energy two-level states. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 9, 653–658 (10 May 1999)     

On the variation of activation energy for amorphous–crystallization phase transition in Se–Te–Sn chalcogenide glasses using iso-conversional analysis

In this paper, the variation of activation energy of amorphous–crystallization phase transition of as-Se_85–xTe₁₅Sn_x (x = 2, 4 and 6) chalcogenide glasses is investigated using iso-conversional analysis under non-isothermal conditions using differential scanning calorimetric (DSC) technique. The study is based on the variation of activation energy of crystallization with the degree of conversion and hence with temperature. The three iso-conversional methods of Kissinger–Akahira–Sunose (KAS), Ozawa–Flynn–Wall (OFW) and Friedman are used to deduce the variation of activation energy with the extent of conversion and also with temperature. The KAS and OFW methods give the similar values while the Friedman method gives lower values of activation energy of crystallization for the investigated chalcogenide glasses.     

Room temperature deposition of amorphous SiC thin films using low energy ion bombardment

Silicon carbide (SiC) films are prepared by single- and dual-ion beam sputtering deposition at room temperature, respectively. An assisting argon ion beam (ion energy Ei=150 eV) bombards directly the substrate surface to modify the SiC film surface. The thin films are characterized by the Fourier transform infrared spectroscopy (FTIR) and the Raman spectra. With assisting ion beam bombardment, the density of the Si–C bond in the film increases. Meanwhile, the excess carbon or the size of the sp² bonded clusters and the amorphous Si (a-Si) phase decrease. These results indicate that the composition of the films is mainly Si–C bond. UV-vis transmission shows that the E_opt increases steadily from 1.85 eV for the amorphous SiC (a-SiC) films without bombardment to about 2.29 eV for those with assisting ion beam bombardment.     

Effects of hydrogen plasma treatment on SnO2:F substrates for amorphous Si thin film solar cells

We investigated the effects of hydrogen plasma treatment on the physical and electrical properties of fluorine-doped tin oxide (FTO) films used for amorphous silicon (a-Si) thin film solar cells. A slight increase in carrier concentration by the hydrogen doping effect was observed for the FTO film exposed to the hydrogen plasma for 5 min. For further exposure to the plasma, the chemical reduction became prominent and resulted in deterioration of the electrical and optical properties of the film. XPS analysis revealed that the chemical reduction of SnO₂ to Sn metallic state occurs on the surface region. It was found that the defects formed by hydrogen plasma act as recombination centers at the interface between FTO electrode and p-layer of a-Si solar cells. This phenomenon resulted in the deterioration of the cell performance. The averaged conversion efficiency (6.82%) of the cells on pristine FTO hydrogen substrate was decreased to 5.81% for the cells on FTO treated for 5 min, which is mainly attributed to the decrease in short-circuit current density.     

Investigation of TiC-C coatings by X-ray photoelectron spectroscopy

Titanium carbide-based coatings deposited by arc-technology in C₂H₂/Ar atmosphere were studied by X-ray photoelectron spectroscopy. It was found that, in addition to the cubic phase of TiC _x O _y oxycarbide, the films contain carbon in the amorphous, presumably graphite-like state. In carbon C1s spectra, bands at 282.0, 284.4, and 286.0 eV correspond to the TiC _x state, amorphous carbon, and C-C bonds, respectively. The maximum at 283.0 eV was interpreted as the C state in titanium carbide nanoforms, i.e., Ti₁₄C₁₃ clusters or Ti₈C₁₄ carbohedra. The phase ratio was varied by coating deposition conditions, i.e., TiC/a-C deposition by Ti cathode sputtering in C₂H₂/Ar, and composite Ti/C target sputtering in Ar and C₂H₂/Ar. When using the Ti cathode and C₂H₂/Ar gas mixture, the ratio of carbide and amorphous a-C phases was estimated as 1: 1; the surface layer ～15 nm thick was enriched with amorphous carbon. It was assumed that TiC/a-C composite coatings with an additional a-C film on the surface would have an increased stability in reaction media and good biocompatibility.     

Spectrum of Kelvin-wave turbulence in superfluids

We derive a type of kinetic equation for Kelvin waves on quantized vortex filaments with random large-scale curvature, that describes step-by-step (local) energy cascade over scales caused by 4-wave interactions. Resulting new energy spectrum E _LN(k) ∝ k ^−5/3 must replace in future theory (e.g., in finding the quantum turbulence decay rate) the previously used spectrum E _KS(k) ∝ k ^−7/5, which was recently shown to be inconsistent due to nonlocality of the 6-wave energy cascade.     

Accumulation and annealing of implantation damage in a-Si:H

Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H⁺, B⁺, P⁺, and Ar⁺ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T _a<250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.     

Annealing effects and short-range ordering in the non-magnetostrictive amorphous alloy Co58Ni10Fe5Si11B16

Effects of isothermal and isochronal annealing on the coercive field and the effective magnetic anisotropy in the as-quenched and the stress relieved amorphous alloy Co₅₈Ni₁₀Fe₅Si₁₁B₁₆ were investigated. The mechanisms of the deterioration of soft magnetic properties in non-magnetostrictive amorphous alloys by annealing at low temperatures,T _a <T _c , are discussed. It turned out, that short-range ordering, i.e., topological short-range ordering (TSRO) and chemical short-range ordering (CSRO), caused by annealing lead to changes of the magnetostriction _s , and of the induced magnetic anisotropyK _i . Both effects give rise to an increase of the coercive field. In addition, the kinetics of short-range ordering was studied and from these data, which are closely related to the stability of soft magnetic properties, the activation energy and a preexponential factor was derived:Q _s.r=0.7eV,v ₀=9.6×10³s^–1.