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非晶硅太阳电池结构模拟设计
引用本文:何卓铭,金尚忠,梁培,岑松原.非晶硅太阳电池结构模拟设计[J].光子学报,2014,40(2):204-208.
作者姓名:何卓铭  金尚忠  梁培  岑松原
作者单位:(中国计量学院 光学与电子科技学院,杭州 310018)
基金项目:智能型太阳光导入照明系统的设计与开发项目(No.2009C23G2080009)
摘    要:为了从理论上分析提高非晶硅太阳能电池的转化效率,运用微电子和光子结构分析一维器件模拟程序模拟非晶硅太阳电池a-SiC∶H/a-Si∶H/a-Si∶H结构,分析比较了不同前端接触透明导电层的功函数ФITO、禁带宽度、本征层厚度、掺杂浓度、缺陷态密度等因素对太阳电池性能的影响.模拟得到,在功函数达到5.1 eV,禁带宽度1.8 eV,本征层厚度265 nm等最优化条件下,非晶硅太阳能电池转化效率达到9.855%,比一般非晶硅太阳能电池转化效率高近2%.

关 键 词:非晶硅  太阳电池  模拟  性能参量
收稿时间:2010-09-09

Structural Simulations of Amorphous Silicon Solar Cells
HE Zhuo-ming,JIN Shang-zhong,LIANG Pei,CEN Song-yuan.Structural Simulations of Amorphous Silicon Solar Cells[J].Acta Photonica Sinica,2014,40(2):204-208.
Authors:HE Zhuo-ming  JIN Shang-zhong  LIANG Pei  CEN Song-yuan
Institution:(College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China)
Abstract:In order to theoretically improve the conversion efficiency of amorphous silicon solar cells,this article uses AMPS (Analysis of Microelectronic and Photonic Structures) mode was used to module the a-Si solar cells with a structure of TCO/p-a-SiC∶H/i-a-Si∶H/n-a-Si∶H/metal.The intrinsic layer thickness,band gap,doping concentration,defect density of states and other factors were analyzed and compared on the performance of solar cells.The simulation results are as follows:when the work function equals to 5.2 eV,band gap is about 1.8 eV,the intrinsic layer thickness is 265 nm,and amorphous silicon solar cell′s conversion efficiency can be 9.855%,which is almost 2% more than the average conversion efficiency of amorphous silicon solar cells.
Keywords:Amorphous silicon  Solar cell  Simulation  Function parameters
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