HT-7上氘等离子体放电时中子注量的测量与分析

利用三氟化硼（BF₃） 和氦三（3He）正比计数管组成的快速时间分辨中子注量探测系统,对HT-7超导托卡马克上氘等离子体放电时光中子和聚变中子的产生机理进行研究.结合γ射线、硬X射线等相关诊断的实验结果,分析了纯欧姆放电和低杂波辅助加热放电时,中子注量信号随时间演化的典型特征.结果表明：HT-7在投入大功率低杂波辅助加热等离子体放电时,能够产生数量可观的氘-氘（D-D）聚变中子. 关键词： 中子注量 聚变中子 光中子 托卡马克     

HT-7上射频波加热时中子辐射行为的研究

HT-7超导托卡马克进行DD等离子体放电时,中子的辐射与辅助加热射频波的类型(LHW加热、ICRF加热)及功率密切相关.利用BF₃与³He正比计数管组成的快速时间分辨中子注量监测系统,研究了不同类型的射频加热对于中子产生机理及高能离子形成的影响.LHW加热功率较低时,易形成逃逸,产生大量的光中子.特定频率的ICRF(27 MHz,24 MHz)加热时,聚变中子所占份额以及总的中子产额均随波功率的增大而显著增涨. 关键词： 射频加热 中子 托卡马克     

HL－1M中的聚变中子产额

本文概算了在欧姆加热、波加热和中性束注入条件下，ＨＬ－１Ｍ托卡马克等离子体的聚变中子产额、中子通量，以及相关的电离率、电荷交换率及快离子的空间分布。计算结果为发展下一代聚变中子探测系统和进行中子辐射的环境评估提供了依据。     

超强超短脉冲激光诱发大尺度氘团簇聚变

 利用低温脉冲气阀获得了平均含有3×103氘原子的氘团簇。在飞秒激光装置上实现了氘团簇聚变,每发中子产额为1×10³。中子产额对激光功率密度敏感,保持激光能量不变,随着激光焦斑的变大,DD聚变中子产额逐渐增加,最大值出现在激光焦斑为470 mm时;继续增大激光焦斑,没有观察到中子信号。实验结果还表明激光氘团簇聚变发生的区域主要是激光辐照的等离子体热区,此区域内邻近氘团簇库仑爆炸发射的高能氘离子碰撞引发聚变反应。     

强光一号装置单氘丝中子发射实验研究

 介绍了利用飞行时间技术测量Z箍缩装置单氘丝中子发射。实验发现，Z箍缩中子发射过程中,伴随产生很强的硬X射线，利用铝丝阵产生硬X射线的实验，建立较好的硬X射线屏蔽,大大减弱了它的辐射强度。所采用的双闪烁探测器中子探测系统，进行了3个发次的单氘丝负载实验，确认产生了聚变氘氘中子。4172发次实验测量结果表明，中子产额1.5×10⁹，中子能量为(2.45±0.26) MeV。实验结合分幅照相数据分析认为，峰电流和负载未能很好匹配，等离子体存在不稳定现象。     

HL—1M中的聚变中子产额

本文概算了在欧姆加热、波加热和中性束注入条件下，ＨＬ－１Ｍ托卡马克等离子体的聚变中子变额中子通量，以及相关的电离率，电交换率及快离子的空间分布。计算结果为发展下一代聚变中子探测系统和进行中子辐射的环境评估提供了依据。     

SILEX-I装置上激光-团簇聚变实验中子产额测量

 超短超强脉冲激光与CD4团簇相互作用可以产生高能量的氘离子,从而产生DD聚变中子,这种团簇聚变中子源有着非常广阔的应用前景。在SILEX-I 100 TW飞秒激光装置上,超短超强脉冲激光与CD₄团簇相互作用实现了DD核聚变。团簇聚变的中子产额是实验中最为重要的物理量,在实验中采用高灵敏的中子探测器对团簇聚变产生的中子进行了测量,在现有实验条件下测得中子产额为10³。     

反冲质子磁分析技术用于氘氚中子能谱测量研究

介绍了一种基于反冲质子法和磁分析技术的氘氚聚变诊断方法, 适用于稳态及脉冲条件下的等离子体温度、燃料密度和中子产额的精确诊断. 设计了小型的原理性装置, 磁分析器使用高性能钕铁硼二极永磁铁, 焦平面上使用CR-39固体径迹探测器或PIN探测器测量质子位置分布. 使用²³⁹Pu α 源对磁分析器进行了实验标定, 建立了配套的模拟程序. 利用蒙特卡罗方法模拟分析了装置整体性能, 并在K-400加速器上进行了中子实验研究.     

ICF中子产额测量中统计涨落分析及计算

 塑料闪烁探测器通常用来测量氘氘、氘氚聚变中子产额。中子在闪烁体中产生的质子数的统计涨落及质子在闪烁体中沉积能量的统计涨落为测量结果引入了两项不确定度分量。以氘氚聚变中子为例,分析了这两种统计涨落的概率密度函数的计算方法,该计算方法也适用于其它能量的单能快中子和塑料闪烁体作用的相应计算。     

D+离子束轰击时间对氘钛靶特性的影响

利用ZF-300keV中子发生器,采用伴随粒子法研究了氘钛靶的中子产额随D⁺离子束轰击时间的变化特性;利用慢正电子湮没技术和扫描电镜分别研究了D⁺离子束轰击前后靶辐射损伤特性和表面形貌特征.结果表明,束流轰击引起氘钛靶缺陷结构和表面形貌的改变 ,但轰击时间的不同并未引起氘钛靶的中子产额、缺陷结构和表面形貌有明显差异;数值模拟了D⁺离子束在氘钛靶的辐射损伤特性和能量损失规律并与实验结果进行了比照分析和讨论. 关键词： 中子发生器 氘钛靶 伴随粒子法 慢正电子湮没技术     

Thermoluminescence of α-Al 2O 3 by neutron irradiation at low temperature

Thermoluminescence (TL) mechanisms of neutron-irradiated α-Al₂O₃ at 20 K is reported. The TL glow curves of neutron-irradiated and γ-ray-irradiated α-Al₂O₃ were observed. The TL emission bands near 340, 430, 530 and 694 nm were observed in the neutron-irradiated α-Al₂O₃. The γ-ray-irradiated α-Al₂O₃ only showed the TL emission line nearly at 694 nm, corresponding to the R lines of α-Al₂O₃:Cr³⁺. Therefore, the first three emission bands are related to the atomic displacement defects as F-type centers caused by neutron irradiation.     

Radiation effects on luminescent and structural properties of YPO4: Pr3+ nanophosphors

ABSTRACT

YPO₄ phosphors doped with trivalent ion Pr³⁺ were prepared by sol–gel method and treated with different doses of gamma radiation, from 0.25 MGy to 4 MGy. Effects of radiation on morphology, structure and luminescent properties were analyzed. Also, the influence of radiation on the change in the color of the samples was examined. The color efficiency of powders was evaluated by colorimetric analysis (CIE and L * a * b system). It has been observed that powders change color under the influence of radiation, i.e. they pass from white to pinkish red. Also, it has been determined that the radiation affects morphology change, as the particle size increases with increasing of the radiation dose. With the increase in the radiation dose, the emission intensity of samples decreases. The structure remains almost unchanged after irradiation, and the intensity constantly decreases with increasing of dose.     

中子物质中的3PF2态超流性和微观三体核力效应

利用Brueckner-Hartree-Fock(BHF)和BCS理论方法，计算了纯中子物质中处于³PF₂态的中子对关联能隙，特别是研究并讨论了微观三体核力对³PF₂态中子超流性强弱的影响. 结果表明：三体核力显著地增强了中子物质中³PF₂态中子超流性；当采用BHF单粒子能谱时，三体核力导致相应的对关联能隙峰值由0.22MeV增大到0.50MeV. 关键词： 中子物质 3PF₂超流性')" href="#">³PF₂超流性 三体核力 BCS理论     

980 nm激发下Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的上转换发光特性

通过固相反应法制备了Er³⁺/Yb³⁺共掺杂ZrO₂-Al₂O₃粉末的样品，并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现，在可见光范围内有3个强的发光带，一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带，分别对应于Er³⁺离子的以下辐射跃迁：⁴F_9/2→⁴I_15/2、⁴S_3/2→⁴I_15/2、 ²H_11/2→⁴I_15/2.其中又以Er³⁺离子的⁴F_9/2→⁴I_15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析，发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测，发现ZrO₂主要以立方相为主，并且计算得到了这种立方结构的晶格常数.Al₂O₃固溶于ZrO₂中，Al³⁺嵌入ZrO₂后产生氧空位，导致ZrO₂晶体的对称性降低，这种结构变化更有利于提高上转换效率，即上转换发光强度增强. 关键词： 3+/Yb³⁺')" href="#">Er³⁺/Yb³⁺ 上转换 2-Al₂O₃')" href="#">ZrO₂-Al₂O₃ 荧光 稀土     

Energy transfer between activators at different crystallographic sites in Sr3SiO5:Eu

A yellow phosphor, Sr₃SiO₅:Eu²⁺, was synthesized by a high temperature solid-state method. Sr₃SiO₅:Eu²⁺ exhibits a single yellow emission under the blue radiation excitation. However, Sr₃SiO₅:Eu²⁺ shows a two-peak emission under the ultraviolet radiation excitation when Eu²⁺ doping content is less than 0.01 mol. Moreover, the blue emission disappears and the yellow emission reaches the peak value when Eu²⁺ doping content is 0.01 mol. Namely, the energy transfer takes place between the Eu²⁺ activators, which is located at two different crystallographic sites in the Sr₃SiO₅. And the energy transfer mechanism is the dipole-dipole interaction.     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

Dosimetric properties of rare earth doped LiCaBO3 thermoluminescence phosphors

Lithium Calcium borate (LiCaBO₃) polycrystalline thermoluminescence (TL) phosphor doped with rare earth (RE³⁺) elements has been synthesized by high temperature solid state diffusion reaction. The reaction has produced a very stable crystalline LiCaBO₃:RE³⁺ phosphors. Among these RE³⁺ doped phosphors thulium doped material showed maximum TL sensitivity with favorable glow curve shape. TL glow curve of gamma irradiated LiCaBO₃:Tm³⁺ samples had shown two major well-separated glow peaks at 230 and 430 °C. The glow peak at 430 °C is almost thrice the intensity of the glow peak at 230 °C. The TL sensitivity of the phosphor to gamma radiation was about eight times that of TLD-100 (LiF). Photoluminescence and TL emission spectra showed the characteristic Tm³⁺ peaks. TL response to gamma radiation dose was linear up to 10³ Gy. Post-irradiation TL fading on storage in room temperature and elevated temperatures was studied in LiCaBO₃:Tm³⁺ phosphor.     

Upconversion emission enhancement of TiO2 coated lanthanide-doped Y2O3 nanoparticles

To investigate the upconversion emission,this paper synthesizes Tm3+ and Yb3+ codoped Y2O3 nanoparticles,and then coats them with TiO2 shells for different coating times.The spectral results of TiO2 coated nanoparticles indicate that upconversion emission intensities have respectively been enhanced 3.2,5.4,and 2.2 times for coating times of 30,60 and 90 min at an excitation power density of 3.21×102 W.cm 2,in comparison with the emission intensity of non-coated nanoparticles.Therefore it can be concluded that the intense upconversion emission of Y2O3:Tm3+,Yb3+ nanoparticles can be achieved by coating the particle surfaces with a shell of specific thickness.     

Reaction of C2HCl2+O2: Combined TR-FTIR Spectroscopy and Electronic Structure

用时间分辨傅立叶变换红外发射光谱(TR-FTIR)和G3MP2//B3LYP/6-311G(d,p)水平的电子结构计算研究了环境化学中重要的二氯代乙烯自由基C₂HCl₂和O₂分子的基元反应通道和机理. 通过0.5 cm^-1高分辨的TR-FTIR发射光谱观察到三种振动激发态产物CO₂、CO和HCl,由光谱拟合得到CO和HCl的振动态分布,结合电子结构计算的反应势能曲线,提出反应机理和能量上最可能的反     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.