Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasmas

Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasma has been investigated by means of a Langmuir probe as well as an optical probe in this paper. The radial uniformity of plasma has been discussed through analyzing the nonuniformity factor β(calculated by the measured n_e, lower β means higher plasma radial uniformity). The results show that during the active-glow period, the radial distribution of ne exhibits an almost flat profile at the beginning phase, but it converts into a parabola-like profile during the steady state. The consequent evolution for β is that when the power is turned on, it declines to a minimum at first, and then it increases to a maximum, after that, it decays until it keeps constant. This phenomenon can be explained by the fact that the ionization gradually becomes stronger at the plasma center and meanwhile the rebuilt electric field(plasma potential and ambipolar potential) will confine the electrons at the plasma center as well. Besides, the mean electron energy( ε_(on)) at the pulse beginning decreases with the increasing duty cycle. This will postpone the plasma ignition after the power is turned on. This phenomenon has been verified by the emission intensity of Ar(λ = 750.4 nm). During the after-glow period, it is interesting to find that the electrons have a large depletion rate at the plasma center. Consequently, ne forms a hollow distribution in the radial direction at the late stage of after-glow. Therefore, β exhibits a maximum at the same time. This can be attributed to the formation of negative oxygen ion(O~-) at the plasma center when the power has been turned off.     

Anomalous temperature dependence of magnetization in polycrystalline Fe65Ni35 alloy

Magnetization at 0.3 and 140 Hz (0–10 Oe) and magnetic relaxation measurements were carried out in detail in the temperature range between 4.2 and 300 K for a polycrystalline Fe₆₅Ni₃₅ alloy. The typical temperature T_g and the magnetic field H_g which correspond to the anomalous temperature in χ-T curves and inflection field in σ-H curves, respectively, are summarized and a H-T diagram is obtained. A strong magnetic relaxation is observed along the H_g-T line. The temperature dependence of H_g is discussed by the thermal activation of 180° domain wall which is pinned strongly by the antiferromagnetic-like clusters below T_g. It is find that H _g is a linear function of T .     

Anomalous temperature dependence of magnetization in single-crystal Fe65Ni35 alloy

Magnetization (0–10 Oe) and magnetic relaxation measurements were carried out in the temperature range between 4.2 and 300 K for three picture-frame samples of Fe₆₅Ni₃₅ alloy whose edges were parallel to 100, 110 and 111, respectively. The typical temperature T_g and the magnetic field H_g which correspond to the anomalous temperature in the χ-T curve and inflection field in the σ-H curve, respectively are summarized and H-T_g and H_g-T diagrams are obtained. A strong magnetic relaxation is observed along the H_g-T line. The dependence of H_g on the crystallographic direction and on the temperature are discussed by the thermal activation process of the 180° domain wall which is pinned strongly by the antiferromagnetic clusters below T_g. The anomaly of magnetization of Fe₆₅Ni₃₅ alloy can be interpreted by the macroscopic picture of the coexistence of ferromagnetic and antiferromagnetic-like regions which may be caused by a statistical fluctuation of alloy composition.     

Exploration of the Townsend regime by discharge light emission in a gas discharge device

The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device(MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission(LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σtregimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.     

Dynamical spin susceptibility of the d–p model in the over doping region

Dynamical spin susceptibility χ^s(q,ω) of the d–p model in the over doping region is investigated by using the auxiliary boson technique. It includes higher order terms of the 1/N-expansion within the random phase approximation (RPA) of the local vertex, where frequency dependence of the quasi-particle interaction is taken into account. The incommensurate spin fluctuation is obtained due to the nesting effect in the low energy region (ωω^*), whereas the commensurate one in the high energy region (ωω^*), the characteristic energy ω^* is estimated to be about 30 meV. Both of the spin–lattice relaxation rate 1/T₁ and the spin–spin relaxation rate 1/T_g monotonically increase as T decreases, while the spin Knight shift K is almost independent of T.     

Electrical and optical characteristics of the radio frequency surface dielectric barrier discharge plasma actuation

Electrical characteristics and optical emission spectrum of the radio frequency(RF) surface dielectric barrier discharge(SDBD) plasma actuation are investigated experimentally in this paper. Influences of operating pressure, duty cycle and load power on the discharge are analyzed. When the operating pressure reaches 30 kPa, the discharge energy calculated from the Charge–Voltage(Q–V) Lissajous figure increases significantly, while the effective capacitance decreases remarkably. As the duty cycle of the applied voltage increases, the voltage–current waveforms, the area of Q–V loop and the capacity show no distinct changes. Below 40 W, effective capacitance increases with the increase of load power, but it almost remains unchanged when load power is between 40 W and 95 W. The relative intensity I_(391.4)~peak/I_(380.5)~peak changes little as the operating pressure varies from 4 kPa to 100 kPa, while it rises evidently with the pressure below 4 kPa, which indicates that the RF discharge mode shifts from filamentary discharge to glow discharge at around 4 kPa. With the increase of load power, the relative intensity I_(391.4)~peak/I_(380.5)~peak rises evidently. Additionally, the relative intensity I_(371.1)~peak/I_(380.5)~peak is insensitive to the pressure,the duty cycle, and the load power.     

液体电极上辉光放电丝的运动特性研究

大气压液体电极放电在生物医疗、化学降解、环境保护等众多方面具有广泛的应用前景,引起了研究者的关注.本文利用直流电压激励棒-水电极装置,在6 mm气隙间产生了大气压辉光放电.研究发现,随着电流的增大,放电由锥状转变成柱状,且此过程中水面上放电环的直径先增大后减小.利用高速照相机对放电进行研究,发现锥状放电是由单个放电丝旋转形成的.通过测量放电的伏安特性,表明放电处于正常辉光机理.利用光谱学方法,研究了不同电流下的振动温度、转动温度和谱线强度比I_(391.4)/I_(337.1),发现它们均随电流的增加而增大.根据气体放电理论,分析和解释了放电丝的运动机理,并对水面上放电环直径随电流的变化关系进行了解释.这些结果对于大气压液体电极放电的理论研究和实际应用均具有一定参考价值.     

BP+基态和激发态的势能曲线和光谱性质的研究

本文利用量子化学中的多参考组态相互作用方法(MRCI), 在aug-cc-pVQZ级别计算了在环境科学中具有重要作用的离子BP⁺. 得到了对应三个离解极限B⁺(¹S_g)+P(⁴S_u), B⁺(¹S_g)+P(²D_u)以及B⁺(¹S_g)+P(²P_u)的6个Λ-S态势能曲线. 在计算中还考虑了Davidson修正(+Q)和标量相对论效应, 用以提高计算精度. 通过分析Λ-S态的电子结构, 确认了电子态的多组态特性. 计算中首次纳入了旋轨耦合效应, 获得了由BP⁺离子的6个Λ-S态分裂出的10个Ω 态的势能曲线. 计算得到的势能曲线表明相同对称性的Ω 态的势能曲线存在着明显的避免交叉. 在得到的Λ-S态和Ω 态的势能曲线的基础上, 运用LEVEL8.0程序通过求解核径向的Schrödinger 方程, 得到了相应的Λ-S态和Ω 态的光谱常数T_e, R_e, ω_e, ω_eχ_e, B_e和D_e, 其中基态X⁴∑^-的光谱常数与已有的理论值符合的非常好, 文中其他电子态的光谱常数均为首次报道. 关键词： 多参考组态相互作用方法(MRCI) 势能曲线 光谱常数 旋轨耦合效应     

甚高频激发容性耦合氩等离子体的电子能量分布函数的演变

甚高频激发的容性耦合等离子体由于离子通量和能量的相对独立可控而受到人们的关注. 本文采用朗缪尔探针诊断技术测量了40.68 MHz激发的容性耦合Ar等离子体的特性(如电子能量概率分布、电子温度和密度等)随宏观参量的演变情况. 实验结果表明, 电子能量概率分布随着气压的增加从双麦克斯韦分布逐步转变为单麦克斯韦分布并最终演变为Druyvesteyn分布, 而射频激发功率的增加促进了低能电子布居数的增强; 在从等离子体放电中心移向边界的过程中, 低能电子的布居数显著下降, 而高能电子的布居则有所上升; 放电极板间距的变化直接导致了等离子体中电子加热模式的转变. 另外, 我们也对等离子体中的高低能电子密度和温度的分配情况进行了讨论.     

落管中Ni-Fe-Ti合金的快速凝固机理及其磁学性能

采用落管自由落体方法实现了Ni_(45)Fe_(40)Ti_(15)合金在微重力无容器条件下的快速凝固,获得了直径介于160—1050μm的合金液滴.理论计算表明冷却速率及过冷度随液滴直径减小而增大,并呈指数函数关系,实验获得的最大过冷度为210 K(0.14 T_L).随着过冷度增大,凝固组织中粗大的γ-(Fe,Ni)枝晶逐渐细化,二次枝晶间距减小,溶质Ti在γ-(Fe,Ni)相中的固溶度显著扩展.对不同直径合金液滴的凝固样品进行磁学性能分析,结果表明随着凝固合金液滴直径减小,其饱和磁化强度增大,矫顽力减小,矩形比下降,软磁性能明显提高.     

旋转方形散射体对三角晶格磁振子晶体带结构的优化

用改进的平面波展开法数值计算了正方形散射体三角排列的二维磁振子晶体当散射体旋转时的带结构. 结果显示, 同样的填充率下, 旋转正方柱散射体可以在新的频率范围内打开更多的带隙, 或者使低频带隙加宽. 说明旋转散射体可以有效地优化带隙.     

光解苯半醌自由基的CIDEP谱

用高时间分辨ESR谱仪实验给出了光解对苯醌产生的苯半醌自由基的CIDEP发射谱.用三重态机理,同时考虑了自由基对机理的影响,从理论上分析了极化强度,计算出了增强因子V(Ⅰ)=-0.66,V(R)=0.2,一级反应速率k_1,A=0.05/μs,二级反应速率β=0.02/μs,横向和纵向弛豫时间T₁≈T₂=2.3μs.     

Influence of alkali metal superoxides on structure,electronic,and optical properties of Be_(12)O_(12) nanocage:Density functional theory study

The effect of alkali metal superoxides M_3O(M = Li,Na,K) on the electronic and optical properties of a Be_(12)O_(12) nanocage was studied by density functional theory(DFT) and time-dependent density functional theory(TD-DFT).The energy gaps(Eg) of all configurations were calculated.Generally,the adsorption of alkali metal superoxides on the Be_(12)O_(12) nanocage causes a decrease of Eg.Electric dipole moment μ,polarizability α,and static first hyperpolarizability β were calculated and it was shown that the adsorption of alkali metal superoxides on Be_(12)O_(12) increases its polarizability.It was found that the absorption of M_3 O on Be_(12)O_(12) nanocluster improves its nonlinear optical properties.The highest first hyperpolarizability(β≈ 214000 a.u.) is obtained in the K_3O–Be_(12)O_(12)nanocluster.The TD-DFT calculations were performed to investigate the origin of the first hyperpolarizabilities and it was shown that a higher first hyperpolarizability belongs to the structure that has a lower transition energy.     

Effects of crystallographic ordering on the magnetic behaviour of (AgIn)1-zMn2zTe2 and (CuIn)1-zMn2zTe2 alloys

Measurements of magnetic susceptibility in the temperature range 4.2–300 K were made on polycrystalline samples of the (AgIn)_{1 - z}Mn_2zTe₂ and (CuIn)_{1 - z}Mn_2zTe₂ alloys, and the data used to give values of spin-glass transition te mperature T_g and Curie-Weiss paramagnetic temperature θ. For any sample for which the X-ray powder photograph indicated an apparently single phase condition, either zinc-blende or chalcopyrite, the susceptibility data could show up to three separate T_g values. These different magnetic conditions are attributed to crystallographic ordering of the Mn ions on the chalcopyrite and zinc-blende lattices, the three observed T_g values corresponding to disordered zinc-blende, ordered zinc-blende and ordered chalcopyrite. The value of θ obtained from the 1/χ vs. T plot is shown to be a weighted mean of the separate values of θ for the phases present. The relative sizes of the T_g peaks and the values of θ for any given sample gives an indication of the amount of each phase present. These amounts were varied by using different methods of heat treatment and it was shown that the magnetic behaviour was consistent with the T(z) phase diagram for the two alloy systems.     

Magnetostriction and spin reorientation in ferromagnetic Laves phase Pr(Ga_xFe_(1-x))_(1.9) compounds

The magnetostriction, magnetization, and spin reorientation properties in Pr(Ga_xFe_(1-x))_(1.9) alloys have been investigated by high-precision x-ray diffraction(XRD) step scanning, magnetization, and Mo¨ssbauer spectra measurements. Ga substitution reduces the magnetostriction(λ_(||)) with magnetic field H ≥ 8 kOe(1 Oe = 1.33322×10~2 Pa), but it also increases the λ|| value when H ≤ 8 kOe at 5 K. Spin-reorientations(SR) are observed in all the alloys investigated, as determined by the step scanned XRD, Mo¨ssbauer spectra, and the abnormal temperature dependence of magnetization. An increase of the spin reorientation temperature(T_(SR)) due to Ga substitution is found in the phase diagram, which is different from the decrease one in many R(T_x Fe_(1-x))_(1.9)(T = Co, Al, Mn) alloys. The present work provides a method to control the easy magnetization direction(EMD) or T_(SR) for developing an anisotropic compensation system.     

Temperature range for critical scaling behavior in YBCO thin films

The magnetic and transport properties of thin films and single crystals of YBa₂Cu₃O_7−δ are compared. For measurements on thin films, the apparent critical scaling behavior is observed to exist over a temperature range from 87 K down to the vortex-glass transition T_g = 84.2 K at 2.5 kOE and from 83 K to T_g = 70.4 K at 50 kOe. The inflection point (T_inf) in temperature dependent resistivity measurements R(T) coincides with the highest temperature at which current-voltage (I–V) characteristics are found to scale. The region between T_g and T_inf shows a behavior characteristics of thermally activated flux motion, while above T_inf I–V curves show ohmic behavior. No similar scaling region is observed in some single crystal results, supporting recent claims that the phase transition in some single crystals may not be critical in nature (of order greater than one).     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.     

锯齿波频率对介质阻挡放电光谱特性的影响

采用微间隙平行平板介质阻挡放电(DBD)装置,以氩气作为工作气体,研究了锯齿波激励下DBD的放电图像、发光信号、发射光谱与锯齿波频率的关系。研究发现随锯齿波频率增加,DBD会从均匀模式(低于10 kHz),经历微放电丝与均匀放电共存,并最终过渡到微放电丝占据全部的电极区(频率高于35 kHz)。外加电压和发光波形表明,锯齿波频率较低时的均匀放电对应高占空比的阶梯放电。随频率增大,出现微放电丝后,发光波形呈现多脉冲形式,且电压半周期中的发光脉冲个数随着锯齿波频率的增大而减小。当锯齿波频率高于35 kHz时,每半个电压周期的发光脉冲个数减小为一个(单脉冲放电)。通过对放电的发射光谱进行研究,发现发射光谱中包含氮分子的第二正带系(C3Π_u→B3Π_u),OH(A2Σ+→X2Π)和ArI的特征谱线。研究表明OH(308.8 nm)和ArI(750.4 nm)的谱线强度均随锯齿波频率的增大而增大。     

N_2-H_2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

H_2-N_2混合气体电容性耦合射频放电在有机低介电系数材料刻蚀中具潜在研究意义.采用paxticle-incell/Monte Carlo模型模拟了双频(13.56 MHz/27.12 MHz)电压源分别接在结构对称的两个电极上的H_2-N_2容性耦合等离子体特征,研究了其电非对称效应.模拟结果表明,通过调节两谐波间的相位角θ,可以改变其电场、等离子体密度、离子流密度的轴向分布及离子轰击电极的能量分布.当相位角θ为0°时,低频电极(晶片)附近主要离子(H_3~+)的密度最小,离子(H_3~+,H_2~+,H~+)轰击低频电极的流密度及平均能量最高;当θ从0°变化90°时,低频电极的自偏压从-103V到106V近似线性增加,轰击电极的离子流密度变化约±18%,H~+离子轰击低频电极的最大能量约减小2.5倍,轰击电极的平均能量约变化2倍,表明氢离子能量和离子流几乎能独立控制.