A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.     

基于石墨烯的太赫兹器件研究进展

石墨烯是一种零带隙二维的半导体材料, 具有极高的载流子迁移率, 优异的机械、电学、热学和光学等性能. 在太赫兹辐射源、调制器和探测器件的研究中, 石墨烯材料具有独特的优势. 本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主, 综述了石墨烯太赫兹器件的最新研究进展.     

Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications

The possibility of using plasma wave field effect transistor in a time domain terahertz (THz) spectroscopy setup is presented. We demonstrate that High Electron Mobility Transistors (HEMTs) is an efficient device for detection of pulsed terahertz electric fields generated with a femtosecond laser oscillator. The response was observed in the frequency range of about 1 THz, far above the cutoff frequency of the transistors at room temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel and that significant improvement of the active device can be achieved by increasing the drain current. The two-dimensional terahertz imaging applications clearly demonstrate that plasma wave nanometer HEMT should be employed as efficient future detectors in a matrix configuration.     

Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs

An analytical model for subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs is presented in this paper. Both the drift and diffusion components of current densities are considered for the modeling of subthreshold current. Virtual cathode concept of DG MOSFETs is utilized to model the subthreshold swing of TM-DG MOSFETs. The effect of different length ratios of the three channel regions under three different gate materials of device on the subthreshold current and subthreshold swing of the short-channel TM-DG MOSFETs have been discussed. The dependencies of subthreshold current and subthreshold swing on various device parameters have been studied. The simulation data obtained by using the commercially available 2D device simulation software ATLAS™ has been used to validate the present model.     

Scattering of Circularly Polarized Terahertz Waves on a Graphene Nanoantenna

We present a surface current method to model the graphene rectangular nanoantenna scattering in the terahertz band with Comsol.Compared with the equivalent thin slab method,the results obtained by the surface current method are more accurate and efficient.Then the electromagnetic scattering of circularly polarized terahertz waves on graphene nanoantennas is numerically analyzed by utilizing the surface current method.The dependences of the antenna resonant frequency with the circularly polarized wave on width and length are consistent with those for the linear polarized waves.These results are proved to be useful to design efficient nanoantennas in terahertz wireless communications.     

A monolithic resonant terahertz sensor element comprising a metamaterial absorber and micro‐bolometer

In this article a monolithic resonant terahertz sensor element with a noise equivalent power superior to that of typical commercial room temperature single pixel terahertz detectors and capable of close to real time read‐out rates is presented. The detector is constructed via the integration of a metamaterial absorber and a micro‐bolometer sensor. An absorption magnitude of 57% at 2.5 THz, a minimum NEP of and a thermal time constant of 68 ms for the sensor are measured. As a demonstration of detector capability, it is employed in a practical Nipkow terahertz imaging system. The monolithic resonant terahertz detector is readily scaled to focal plane array formats by adding standard read‐out and addressing circuitry enabling compact, low‐cost terahertz imaging.     

Analytical analysis of surface potential for grooved-gate MOSFET

The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner $\theta _0 $. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect (SCE) immunity.     

SEMICONDUCTOR-SUPERLATTICE FREQUENCY MIXER FOR DETECTION OF SUBMILLIMETER WAVES

We report on a GaAs/AlAs superlattice frequency mixer for detection of submillimeter waves. The mixer is based on the nonlinear miniband transport giving rise to domains excited under the action of a microwave field. We designed the mixer for broadband operation (300–600 GHz). For studying basic properties, we investigated the mixer as a harmonic mixer in 15^th order to detect radiation at a radio frequency (RF) near 300 GHz using local oscillator (LO) radiation of a frequency near 20 GHz. We reached a noise equivalent power (NEP) of about 10 fW/Hz. We also show that the use of the superlattice mixer together with a superlattice frequency multiplier allows to realize a superlattice-based free-space transmission line for submillimeter waves.     

采用多种红外视距模型的子弹辐射探测系统作用距离分析

本文基于子弹飞行过程中的红外辐射特性和热成像模型,结合大气对红外辐射吸收和散射衰减,在不同距离处将子弹热成像模型视为扩展源目标和点源目标,利用最小可探测温差(MDTD)、最小可分辨温差(MRTD)和噪声等效功率(NEP)分别给出了相应红外视距模型的估算方法。根据红外热像仪常用参数以3种蒙皮温度给出了3种不同模型下子弹辐射作用距离的计算实例及结果:MDTD模型下得到的作用距离最长,MRTD模型计算所得的作用距离约为MDTD模型的2/3,由NEP模型计算所得的作用距离最短,不到MDTD模型视距的1/2。研究表明,实际设计时应根据不同的系统性能选择作用距离模型。     

Realization of wide-angle and wideband absorber using metallic and graphene-based metasurface for mid-infrared and low THz frequency

This article presents a study on mid-infrared and low-THz absorbers based on metallic and graphene metasurface. The absorber is constructed of a periodic array of patterned elements in patch form placed on a quarter-wavelength dielectric film terminated by a metallic reflector. A simple analytical circuit model equivalent to patch array is used for employing the matching impedance approach to realize the wideband absorber. This absorber is polarization independent for normal incident waves owing to its symmetric structure. Simulation and analytical circuit model results show that the graphene and metallic-based absorbers proposed in this paper can operate with an absorption value above 90% in a normalized bandwidth of 100% in the low terahertz (THz) and the mid-infrared regime, respectively. The proposed absorber is wide-angle for both TM and TE polarizations and polarization-insensitive for small incident angles.     

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

The two-dimensional models for symmetrical double-material double-gate(DM-DG) strained Si(s-Si) metal–oxide semiconductor field effect transistors(MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate(SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.     

Two-color laser wavelength effect on intense terahertz generation in air

Near-IR femtosecond lasers have been proposed to produce high-field terahertz radiation in the air via the laser-plasma interaction, but the physical mechanism still needs to be further explored. In this work, we theoretically investigate the effect of the two-color laser wavelength on the terahertz generation in the air based on a transient photocurrent model.We show that the long wavelength laser excitation can greatly enhance the terahertz amplitude for a given total laser intensity. Furthermore, we utilize a local current model to illustrate the enhancement mechanism. Our analysis shows that the terahertz amplitude is determined by the superposition of contributions from individual ionization events, and for the long wavelength laser excitation, the electron production concentrates in a few ionization events and acquires the larger drift velocities, which results in the stronger terahertz radiation generation. These results will be very helpful for understanding the terahertz generation process and optimizing the terahertz output.     

黑砷磷室温太赫兹探测器

由于太赫兹波与众多物质之间存在着丰富的相互作用,太赫兹技术在众多领域均有应用需求。因此,基于独特物理机制和优异材料特性的高灵敏度、便携式太赫兹探测器的研制刻不容缓。黑砷磷是一种新型二维材料,其带隙和输运特性随化学组分可调,在光电探测领域被广泛关注。目前基于黑砷磷的研究集中在红外探测方面,而对于太赫兹探测的应用未见报道。本文介绍了一种基于黑砷磷的天线耦合太赫兹探测器。实验结果表明,在探测过程中存在两种不同的探测机制,并且两者之间存在竞争关系。通过改变黑砷磷的化学组分可以定制不同的探测机制,使其达到最优响应性能。在平衡材料带隙和载流子迁移率的情况下,探测器实现了室温下对0.37 THz电磁波的灵敏探测,其电压响应度和噪声等效功率分别为28.23 V/W和0.53 nW/Hz1/2。     

Room-temperature terahertz detection based on CVD graphene transistor

We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an Si O2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 n W/Hz1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.     

Studies on the mechanisms of powerful terahertz radiations from laser plasmas

A survey on the mechanisms of powerful terahertz (THz) radiation from laser plasmas is presented.Firstly,an analytical model is described,showing that a transverse net current formed in a plasma can be converted into THz radiations at the plasma oscillation frequency.This theory is applied to explain THz generation in a gas driven by two-color laser pulses.It is also applied to THz generation in a tenuous plasma driven by a chirped laser pulse,a few-cycle laser pulse,a DC/AC bias electric field.These are well verified by particle-in-cell simulations,demonstrating that THz radiations produced in these approaches are nearly single-cycles and linear polarized.In the chirped laser scheme and the few-cycle laser scheme,THz radiations with the peak field strength of tens of MV/cm and the peak power of gigawatt can be achieved with the incident laser intensity less than 10 17 W/cm 2.     

基于双阈值canny均衡化算法的太赫兹图像增强

存在于微波与远红外之间的太赫兹波,因其无损害,稳定性高等独特性质使太赫兹光谱与成像技术在近几年来得到了迅猛的发展。太赫兹波独有的无损伤检测特性,在安全检测方面具有良好的发展前景,获得广大学者的研究和关注。经过太赫兹成像系统获得的太赫兹图像,虽然可以识别出隐藏的武器或其他金属制品,但是太赫兹图像的对比度和清晰度均较差,不能完全符合人眼的视觉效果,也不利于机器识别。目前,对太赫兹图像质量的提高和改善,成为太赫兹成像技术长远发展和广泛应用的关键问题。实验采用太赫兹波投射式成像系统对藏于物体中的金属心型吊坠和金属箭头进行成像,扫描步长0.5 mm,由于太赫兹光源大,能量起伏等系统缺陷,以及外部环境的复杂与干扰,导致成像所得图像均有背景噪声严重,边界模糊等问题,成像质量较差。提出一种基于双阈值的canny均衡化太赫兹图像增强算法,根据太赫兹图像自身性质限制,确定阈值和对图像均衡化的范围,实现图像降噪并引入双阈值canny算法和梯度幅值算法,使图像的对比度和清晰得到整体提高,并保留和突出太赫兹图像的细节信息,获得高分辨率、边缘清晰的图像。实验表明该算法对太赫兹图像具有良好的降噪效果,能够保留图像细节信息,图像对比度和图像质量得到增强和提高,同时增强了太赫兹成像技术对隐藏缺陷或隐藏物体的辨别能力和透视能力,为其在安检应用方面提供必要保证。     

偏振方向对THz电光探测影响的理论研究

采用线性电光效应耦合波理论，系统地研究了用无中心反演对称性的立方晶系晶体作为探测晶体时，terahertz(THz)辐射信号和探测光的偏振方向对电光探测的影响. 研究结果发现，THz辐射和探测光的偏振方向都对电光探测影响很大，沿(110)方向传播时可以获得最大的探测灵敏度，最适合THz的横场探测. 计算研究的部分结果与已有的实验结果相一致，可为电光探测器的设计提供有用的指导. 关键词： 电光探测 THz辐射 偏振 线性电光效应耦合波理论     

Effects of surface roughness on reflection spectra obtained by terahertz time-domain spectroscopy

We present an analytical model that shows that reflection from a rough surface causes a Gaussian frequency roll-off for the spectral magnitude of a terahertz wave and reduces the signal-to-noise ratio of terahertz time-domain spectroscopy. The parameter that determines the width of the frequency roll-off is the standard deviation of the surface height distribution. Measurements of terahertz waves reflected from copper powder samples provide experimental evidence for this effect.     

Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height on the above characteristics has been analyzed.     

基于迈克尔逊干涉仪的太赫兹光谱高速探测方法研究

太赫兹光谱技术作为获取物质在太赫兹频段信息的主要方法,已经被广泛应用于物质成分的测定,而其在成分分布成像方面则有着更广阔的应用前景,例如片剂药品的有效成分检测、行李安检的危险物品检测等。现有的太赫兹光谱探测方法时域光谱技术（THz-TDS）和频域光谱技术（THz-FDS）均不能很好地兼顾光谱分辨率与扫描时间;且获得物质光谱数据往往要花费数秒乃至数分钟时间（取决于光谱仪的结构）,这对多像素成像系统显得过于迟缓,更无法达到视频成像的速率需求,严重制约了太赫兹光谱成像的实际应用。目前的太赫兹波成像多为全频段波强度成像,只能反映样品的空间分布信息,并不能反映出样品的光谱即成分信息。因此,对太赫兹光谱探测速率的提升十分迫切,太赫兹光谱高速探测的实现不仅可以显著减少物质成谱的实验耗时,还为实现物质的太赫兹光谱成分分布成像提供了可能。提出了一种基于迈克尔逊干涉仪的太赫兹光谱高速探测方法,在设计了该方法装置结构的基础上,理论分析了其工作过程,同时进行了太赫兹光谱的计算。然后从数据采样、数据处理及参数选择这几个方面进行问题分析,计算得出该方法能够显著加快物质太赫兹光谱的扫描获取速率。最后,对该方法建模进行仿真研究,模拟实现其完整的探测过程。在仿真研究中,以太赫兹辐射源的频谱分布为例,将该方法的建模仿真结果与时域光谱技术（THz-TDS）测试结果进行了对比,结果表明时域光谱技术（THz-TDS）所测得的频谱曲线可以近似看作是该高速光谱探测法所得频谱曲线的包络线,两种不同方法所得频谱结果具有较强的一致性。总之,该方法能够进行样品的太赫兹光谱探测,且在保证分辨率相同的前提下,较时域光谱技术（THz-TDS）显著加快了成谱速率,为实用、高通量太赫兹光谱成像提供了一种可能。