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Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs |
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| Affiliation: | 1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou 450046, China;2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;3. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450046, China |
| Abstract: | The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS. |
| Keywords: | double-material double-gate MOSFET strained Si threshold voltage subthreshold current |
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