脉冲激光沉积非晶态Ni-V2O5 复合薄膜及其电化学性能研究

首次报道了用 35 5nm脉冲激光沉积非晶态Ni V2 O5复合薄膜电极的电化学性能 .采用不同摩尔比的NixV2 O5靶 (x =0 .1,0 .3,0 .5 ) ,在不同的基片温度 (Ts)和O2 气压力下制备了Ni V2 O5复合薄膜 .XRD和SEM测定表明 ,在不锈钢基片上 ,Ts=30 0℃和氧气压力为 14Pa沉积 0 .5h得到的是非晶态的Ni V2 O5薄膜 .将此非晶态的Ni0 .3 V2 O5薄膜电极用于锂电池的正极 ,与纯V2 O5薄膜相比 ,不仅具有良好的放电速率性能和高的比容量 ,而且其充放电循环稳定性优异 .该薄膜电极在放电速率为 2 0C时测得的比容量达 2 0 0mAh/ g ,并经 10 0 0次以上的充放电循环无明显的衰减     

基片材料与沉积参数对薄膜应力的影响

采用哈特曼-夏克传感器的薄膜应力在线测量仪测量了利用离子辅助电子束蒸发的Si O2,Ti O2,Ta2O5,Al2O3与ITO薄膜在不同厚度时的应力值,并深入研究了基片材料与沉积参数对Si O2,Ti O2薄膜应力的影响。研究结果表明,在成膜的初始阶段,薄膜应力与薄膜厚度基本上呈线性函数,当达到一定厚度时薄膜应力基本趋于一个定值;薄膜与基片的热失配将引起薄膜热应力,通过选择合适的基片材料可以使其降低;对Ti O2薄膜而言,当基片温度低于150℃时,热应力起主要作用,当基片温度高于150℃时,薄膜致密引起的压应力占主导地位,但Si O2薄膜其热应力始终占主导地位;当真空室压强低于1.7×10-2Pa时,Si O2薄膜的张应力主要是由离子辅助溅射效应而引起,当真空室压强高于1.7×10-2Pa时,Si O2薄膜的张应力随着压强的增大而增大,但折射率减小。     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

水溶性V2O5在聚合物太阳能电池中的应用

为了提高聚合物太阳能电池的能量转换效率,选择水溶性V2O5作为阳极缓冲层制备了结构为ITO/TiO2/P3HT∶PCBM/V2O5/Ag的电池器件。V2O5纳米线采用水热法制成。研究了V2O5浓度和退火温度对有机太阳能电池器件性能的影响。实验结果表明:V2O5质量浓度为300μg/mL的器件的效率最高,达到了2.35%,远大于无阳极缓冲层器件的效率0.14%;80℃是V2O5退火的最佳温度。与热沉积方法相比,可溶液处理的V2O5作为阳极缓冲层具有工艺简单且可大面积制备的优点,电池的效率得到了较大幅度的提高。     

紫外光下纳米TiO2薄膜亲水性机理的电化学研究

利用溶胶 凝胶方法在透明导电玻璃ITO (SnO2 ∶In)表面制备纳米TiO2 薄膜 ,XRD谱图表明TiO2 是锐钛矿晶型 ,AFM (Atomic Force Microscope)测得薄膜表面粒子约为 10 0nm .研究了ITO表面纳米TiO2 薄膜的光致亲水性变化 .通过循环伏安技术测定TiO2 薄膜电极在 2 5 3.7nm的紫外光照射后的电化学行为推测光致亲水性机理 .发现在紫外光照射一定时间后 ,TiO2 薄膜电极的循环伏安图在 +0 .0 35V处出现新的氧化峰 ;且随光照时间的增加 ,氧化峰的峰电流增大 ,溶液中的溶解氧对峰电流的大小有明显影响 .实验表明 ,在紫外光照下电极表面有Ti3 + 产生 ,证实了TiO2 薄膜的光致亲水性转变过程与Ti3 + 的生成导致的表面结构变化有关     

溅射法快速沉积YBCO超导薄膜的研究北大核心CSCD

溅射法制备高温超导YBa2Cu3O7-δ(YBCO)薄膜材料目前存在的主要问题是沉积速率慢,制备效率低,大面积薄膜均匀性差.本文中,设计了多工位盒型靶直流溅射镀膜系统,提高了YBCO薄膜沉积速率和制备效率,一次工艺流程可沉积六片产品,总薄膜沉积速率最高可到250nm/h.基片自转与公转相结合,提高了薄膜的面内均匀性,同时研究了公转速度与自转速度的关系以及它们对薄膜生长的关系,发现只有在基片公转速度合适的情况下才能生长出性能好的薄膜.LaAlO3(LAO)单晶基片上YBCO薄膜临界电流密度超过2.8MA/cm2(77K,500nm,0T),薄膜微波表面电阻Rs(10GHz,77K)﹤0.2mΩ,1.8英寸内薄膜面内厚度起伏小于3%,双面薄膜一致性好,能够满足微波器件应用的要求.     

基片温度和退火对CdIn2O4薄膜光学性质和载流子浓度的影响

对射频反应性溅射Cd In合金靶制备的透明导电CdIn2 O4薄膜 ,研究了基片温度及沉积后在氩气流中退火对薄膜的透射、反射和吸收光谱 ,光学常数和载流子浓度的影响。结果表明 :提高基片温度减少了薄膜的载流子浓度 ,退火增加了薄膜的载流子浓度。随着基片温度提高 ,薄膜折射率n和消光系数κ的短波峰将逐渐蓝移 ,而退火使其出现红移。基片温度和退火对薄膜光学常数的影响与其对薄膜载流子浓度的影响是一致的。在制备CdIn2 O4这样一种对于沉积方法和沉积条件极为敏感的透明导电薄膜的沉积过程中 ,这一现象对于实时监控具有极为重要的意义。     

柔性有机电致发光器件导电基板的工艺性能

在聚对苯二甲酸乙二醇酯(PET)柔性衬底上采用直流磁控溅射技术制备了氧化铟锡(ITO)透明导电薄膜,研究了衬底温度、溅射功率和溅射压强等工艺条件对薄膜光电性能的影响,并利用原子力显微镜(AFM)表征了衬底及ITO薄膜的表面形貌。结果表明,在PET衬底温度50℃、溅射功率100W和溅射压强2.66×10-1Pa的条件下,可以得到低方阻(50Ω/□)和高透过率(>90%)的透明导电薄膜。以此柔性ITO衬底为阳极,制备了结构为PET/ITO/NPB/Alq3/Mg∶Ag的柔性有机电致发光器件,在驱动电压为13V时,器件的发光亮度达到了2834cd/m2。     

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数     

IPTO薄膜制备及其在有机光电器件中的应用

新型IPTO(Pr Ti O3掺杂In2O3)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜,通过开尔文探针法测试,其功函数为5.14 e V。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响,将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85 140 cd/m2,外量子效率最大值为3.16%,分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数,可以降低阳极的注入势垒,有利于电荷向有机层注入,改善了器件内的空穴及电子的注入平衡。     

ITO/Au/ITO multilayer thin films on transparent polycarbonate with enhanced EMI shielding properties

ITO/Au/ITO multilayer thin films were deposited onto polycarbonate substrate via magnetron sputtering technique without intentional heating. The deposition times of both ITO and Au layers were studied to optimize the overall transparency and conductivity. As-prepared thin films were characterized using X-ray diffraction analysis, secondary ion mass spectroscopy, scanning and transmission electron microscopy, atomic force microscopy and physical property measurement system. The optical measurement results revealed that the transmittance of the films were enhanced by increasing the gold deposition time up to 15 s. Beyond this point, further increasing the duration caused a decrease in optical transmittance. Upon optimization of the Au deposition time, the deposition duration of ITO layers was also studied to increase electromagnetic interference (EMI) shielding effectiveness (SE). Maximum EMI SE in this work was measured as 26.8 dB, yielding 99.8% power attenuation, which was verified by simulation results.     

The effect of Ag intermediate layer on crystalline, optical and electrical properties of nano-structured thin film

ITO thin films and ITO/Ag/ITO multilayered films were prepared on glass substrate by reactive thermal evaporation technique without intentionally heating the substrate. After deposition the films were annealed in air at three different temperatures (300°C, 420°C and 540°C). The thickness of each layer in the ITO/Ag/ITO films was kept constant at 50 nm/10 nm/40 nm. The opto-electrical and structural properties of ITO/Ag/ITO multilayered films were compared with conventional ITO single-layer films. Although both films had identical thickness, 100 nm, the ITO/Ag/ITO films showed a lower resistivity. XRD spectra showed that Ag intermediate layer had a small effect on crystalline properties of ITO/Ag/ITO films.     

锂离子注入对V2O5薄膜光吸收的影响

采用真空蒸发经热处理制备了Ｖ２Ｏ５薄膜,使用二电极恒流法从１Ｍ／ＬＬｉＣｌＯ４的ＰＣ电解质溶液向Ｖ２Ｏ５薄膜注入锂离子,形成ＬｉｘＶ２Ｏ５（０≤ｘ≤０．５４）,测量了Ｖ２Ｏ５薄膜近垂直反射和透射光谱,计算了光吸收系数。Ｘ射线衍射分析表明薄膜为微晶结构。吸收系数与光子能量关系曲线中存在两个不同的变化区域,光子能量较高部分,（αｈν）１２与ｈν有线性关系;较低部分,吸收光谱存在一个尾巴。这两个区域的分界能量取决于电子和锂离子的注入量。研究结果表明Ｖ２Ｏ５薄膜阳极电致变色起源于吸收边缘的移动,而阴极电致变色则来源于小极化子的吸收     

Electrical and optical properties of indium tin oxide thin films grown by pulsed laser deposition

Indium tin oxide (ITO) thin films (200-400 nm in thickness) have been grown by pulsed laser deposition (PLD) on glass substrates without a post-deposition anneal. The electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O₂ partial pressures ranging from 0.1 to 100 mTorr. For 300 nm thick ITO films grown at room temperature in oxygen pressure of 10 mTorr, the electrical conductivity was 2.6᎒^-3 Q^-1cm^-1 and the average optical transmittance was 83% in the visible range (400-700 nm). For 300 nm thick ITO films deposited at 300 °C in 10 mTorr of oxygen, the conductivity was 5.2᎒^-3 Q^-1cm^-1 and the average transmittance in the visible range was 87%. Atomic force microscopy (AFM) measurements showed that the RMS surface roughness for the ITO films grown at room temperature was ~7 Å, which is the lowest reported value for the ITO films grown by any film growth technique at room temperature.     

脉冲溅射V2O5薄膜结构和性能研究

V2O5薄膜具有很好的离子注入/退出可逆性,是最有潜力的锂离子储存层的候选材料之一,它的电学特性与制备方法、化学计量比、结构和取向等有直接关系,仔细控制工艺参量是制备出在锂电池上应用的V2O5薄膜关键。研究中采用脉冲磁控反应溅射方法,通过精确地控制氧分压、基底温度等关键工艺参量,在石英玻璃和硅片上制备V2O5薄膜。利用X射线衍射和X射线光电子谱,分析了薄膜的成分、相结构、结晶和价态情况,用原子力显微镜表征了薄膜的微观结构,用分光光度计测量从200—2500nm波段V2O5薄膜纯度高、相结构单一、结晶度好。高低温电阻变化2个量级,薄膜的光学能隙为2.46eV。     

A comparative study of thin films of Zn(O;OH)S and In(O;OH)S deposited on CuInS2 by chemical bath deposition method

In this work, a study of synthesis of thin films of Zn(O;OH)S and In(O;OH)S deposited by chemical bath deposition (CBD) is presented. The thin films of Zn(O;OH)S and In(O;OH)S were deposited from different chemical bath systems on absorber layers of CuInS₂ (CIS), indium tin oxide substrates (ITO) and soda lime glass substrates (SL). The differences on the growth rate, optical, morphological and structural properties of the thin films Zn(O;OH)S and In(O;OH)S are studied. The Growth studies showed that thin films of Zn(O;OH)S and In(O;OH)S grown faster on CIS than on SL and ITO substrates. The optical and morphological studies showed that both thin films present high transmittance in visible electromagnetic spectrum and covered uniformly the surface of the substrate, furthermore it was observed that thin films of Zn(O;OH)S and In(O;OH)S were polycrystalline. Finally, the results suggest that thin films of Zn(O;OH)S and In(O;OH)S obtained in this work could be used as buffer layer to replace the thin films of CdS, which are conventionally used as buffer layer in chalcopyrite based solar cells.     

基于金属掺杂ITO透明导电层的紫外LED制备

为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365 nm紫外LED的制备工艺。利用1 cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件下这种薄膜的电阻和透过率,分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365 nm外延片上并完成电极生长,制备成14 mil×28 mil的正装LED芯片。利用电致发光（EL）设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15 eV。在600℃退火后,方块电阻降低6.2 Ω/□,透过率在356 nm处达到90.8%。在120 mA注入电流下,365 nm LED的电压降低0.3 V,功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙,改变紫光LED光电性能。     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

ITO/Au/ITO multilayer thin films for transparent conducting electrode applications

Transparent and conducting ITO/Au/ITO multilayered films were deposited without intentional substrate heating on polycarbonate (PC) substrate using a magnetron sputtering process. The thickness of ITO, Au and ITO metal films in the multilayered structure was constant at 50, 10 and 40 nm, respectively.Although the substrate temperature was kept constant at 70 °C, ITO/Au/ITO films were polycrystalline with an (1 1 0) X-ray diffraction peak, while single ITO films were amorphous. Surface roughness analysis indicated ITO films had a higher average roughness of 1.76 nm, than the ITO/Au/ITO film roughness of 0.51 nm. The optoelectrical properties of the ITO/Au/ITO films were dependent on the Au thin film, which affected the ITO film crystallinity. ITO/Au/ITO films on PC substrates were developed with a resistivity as low as 5.6 × 10⁻⁵ Ω cm and a high optical transmittance of 71.7%.     

氧离子辅助反应蒸发法制备ITO薄膜的研究

采用氧离子辅助电子束反应蒸发工艺在K9玻璃基底上制备了性能优异的ITO薄膜.通过对薄膜方块电阻和透过率的测量分析,研究了基底温度、离子束流、沉积速率等工艺参数对ITO薄膜光电性能的影响.发现升高基底温度有利于减小薄膜的短波吸收,但过高的基底温度会增加薄膜的电阻率,合适的沉积速率可以同时改善薄膜的光学和电学性能.在比较理想的工艺参数下制备的ITO薄膜的电阻率约为5.4×10-4Ω·cm,可见光(波长范围425～685 nm)平均透过率达84.8%,其光电性能均达到实用化要求.