Unusually flat hole dispersion relation in the two-dimensional Hubbard model and restoration of coherence by addition of pair-hopping processes

The dispersion relation of a doped hole in the half-filled 2D Hubbard model is shown to follow a law around the and points in the Brillouin zone. Upon addition of pair-hopping processes this dispersion relation is unstable towards a law. The above follows from T=0 Quantum Monte-Carlo calculations of the single particle spectral function on lattices. We discuss finite dopings and argue that the added term restores coherence to charge dynamics and drives the system towards a d _{x2 - y2} superconductor. Received 22 March 1999     

Phase diagram of the extended hubbard model with pair hopping interaction

A one-dimensional model of interacting electrons with on-site U, nearest-neighbor V, and pair-hopping interaction W is studied at half-filling using the continuum limit field theory approach. The ground state phase diagram is obtained for a wide range of coupling constants. In addition to the insulating spin-density wave (SDW) and charge-density wave (CDW) phases for large U and V, respectively, we identify a bond-charge-density-wave (BCDW) phase W < 0, | U - 2V| < | 2W| and a bond-spin-density-wave (BSDW) for W > 0, | U - 2V| < W. The possibility of bond-located ordering results from the site-off-diagonal nature of the pair-hopping term and is a special feature of the half-filled band case. The BCDW phase corresponding to an enhanced Peierls instability in the system. The BdSDW is an unconventional insulating magnetic phase, characterized by a gapless spin excitation spectrum and a staggered magnetization located on bonds between sites. The general ground state phase diagram including insulating, metallic, and superconducting phases is discussed. A transition to the η-superconducting phase at | U - 2V| ≪ 2t?W is briefly discussed. Received 20 February 2002 / Received in final form 11 April 2002 Published online 19 July 2002     

扩展Su-Schrieffer-Heeger模型在周期性边界条件下的相变

文章计算了含有三种跃迁项(最近邻(NN)、次近邻(NNN)、次次近邻(NNNN)跃迁项)的扩展Su-Schrieffer-Heeger(SSH)模型(模型ⅰ)的热力学特性.对仅含有二种跃迁项(NN、NNN跃迁项)的扩展SSH模型(模型ⅱ)、仅含有一种跃迁项(NN跃迁项)的SSH模型(模型ⅲ)也作了类似的计算.在低温下,每个模型都有相变且跃迁项的存在会降低相变温度.由于NNN跃迁项的存在,在极低温条件下,关于热容量与温度比(HCOTR)随温度变化的单调性,模型i与其它两个模型存在差异.在低温下,模型ⅰ的HCOTR的单调性,会受NN或NNN或NNNN跃迁项的影响并且NN或NNN跃迁项会影响其相变.     

Two-parameter extended Hubbard Hamiltonian with supersymmetry

We investigate under which circumstances extended Hubbard models, including bond-charge, exchange, and pair-hopping terms, are invariant under gl (2,1) superalgebra. This happens for a two-parameter Hamiltonian which includes as particular cases the t - J, the EKS and the one-parameter BGLZ Hamiltonians, all integrable in one dimension. We show that the two parameter Hamiltonian can be recasted as the sum of the BGLZ Hamiltonian plus the graded permutation operator of electronic states on neighbouring sites. The integrability of the corresponding one-dimensional model is discussed. Received: 17 February 1998 / Received in final form: 6 March 1998 / Accepted: 17 April 1998     

Generalized adiabatic polaron hopping: Meyer-Neldel compensation and Poole-Frenkel behavior

The commonly employed adiabatic treatment of polaron hopping is extended to treat the continuous alteration of a carrier wave function with the atoms' movements and a carrier's long-range interaction with a polar surrounding. These features, respectively, introduce carrier-induced softening of the atoms' vibrations and a hopping activation energy that depends on hopping distance. The Meyer-Neldel compensation effect results from carrier-induced softening of vibrations. Poole-Frenkel behavior emerges for electric-field driven polaron hopping in ionic and polar media.     

Mode hopping in single-mode microchip Nd：YAG lasers induced by optical feedback

The mode hopping phenomenon induced by optical feedback in single-mode microchip Nd：YAG lasers is presented. With optical feedback, mode hopping strongly depends on two factors： the ratio of external cavity length to intra-cavity length, and initial gains of the two hopping modes, When external cavity length equals an integral multiple of intracavity length, there is almost no mode hopping. However, if the external cavity length does not equal an integral multiple of intra-cavity length, mode hopping occurs. The ratio of external cavity length to intra-cavity length determines the position of two-mode hopping, The initial gains of the two hopping modes determine the corresponding peak values and oscillating periods of them in the intensity modulation curves.     

A model of hopping and band DC photoconduction in doped crystals

Expressions for the screening length and the ambipolar diffusion length are derived, for the first time, for the case where hopping conduction and band conduction coexist in semiconductors with hydrogen-like impurities. A method is proposed for calculating the diffusion coefficient of electrons (holes) hopping between impurity atoms from data on the Hall effect, in the case where the hopping and band conductivities are equal. An interpretation is given of available experimental data on hopping photoconduction between acceptors (Ga) and donors (As) in p-Ge at T=4.2 K doped by a transmutation method. It is shown that the relative magnitude of the mobilities of electrons hopping between donors and holes hopping between acceptors can be found from the hopping photoconductivity measured as a function of the intensity of band-to-band optical carrier excitation.     

Effect of magnetic field on Mott's variable-range hopping parameters in multiwall carbon nanotube mat

We report the temperature and magnetic field dependence of the conductivity of multiwall carbon nanotube mat in the temperature range 1.4-150 K and in magnetic fields up to 10 T. It is observed that charge transport in this system is governed by Mott’s variable-range hopping of three-dimensional type in the higher temperature range and two-dimensional type in the lower temperature range. Mott’s various parameters, such as localization length, hopping length, hopping energy and density of states at the Fermi level are deduced from the variable-range hopping fit. The resistance of the sample decreases with the magnetic field applied in the direction of tube axis of the nanotubes. The magnetic field gives rise to delocalization of states with the well-known consequence of a decrease in Mott’s T0 parameter in variable-range hopping. The application of magnetic field lowers the crossover temperature at which three-dimensional variable-range hopping turns to two-dimensional variable-range hopping. The conductivity on the lower temperature side is governed by the weak localization giving rise to positive magnetoconductance. Finally, a magnetic field-temperature diagram is proposed showing different regions for different kinds of transport mechanism.     

Rate equations in the hopping transport III. A completely new interpretation of the dc phonon-assisted hopping in the mobility gap

A new interpretation of the low-frequency phonon-assisted hopping conduction in the mobility gap of disordered semiconductors which is inherently connected with the effect of broadening of electronic levels due to electron-phonon coupling is suggested. This interpretation is fully compatible with our previous reported mathematical theory of the hopping conduction. It is argued that the current understanding of the hopping transport is based on a dubious neglect of the above mentioned broadening which makes the usual theories of the dc phonon-assisted hopping conduction inconsistent.     

Electronic phase transitions in the spinless falicov-kimball model with correlated hopping

The extrapolation of small-cluster exact-diagonalization calculations is used to examine the influence of correlated hopping on valence and metal-insulator transitions in the one-dimensional Falicov-Kimball model. It is shown that in the half-filled band case the ground-state phase diagram as well as the picture of valence and metal-insulator transitions found for the conventional Falicov-Kimball model (without correlated hopping) are strongly changed when the correlated hopping term is added. The effect of correlated hopping is so strong that it can induce the insulator-metal transition. Outside half-filling correlated hopping stabilizes the segregated phase in the ground-state, however, the nature of the ground-state remains qualitatively unchanged.     

Compositional dependence of the electrical conductivity of calcium vanadate glassy semiconductors

Scanning electron microscopy (SEM), X- ray diffraction (XRD), density (d), oxygen molar volume (V_m) and dc conductivity of different compositions of calcium vanadate glasses are reported. SEM exhibits a surface without any presence of a microstructure which is a characteristic of the amorphous phase. The overall features of these XRD curves confirm the amorphous nature of the present glasses. Density was observed to decrease with an increase in V₂O₅ content. The experimental results were analyzed with reference to theoretical models existing in the literature. It has been observed that the high-temperature conductivity data are consistent with Mott's nearest-neighbor hopping model. However, both Mott variable-range hopping (VRH) and Greaves intermediate range hopping models are found to be applicable. The hopping at high temperatures in the calcium vanadate glasses occurs by non-adiabatic process in contrast to the vanadate glasses formed with conventional network formers. The hopping model of Schnakenberg can predict the temperature dependence of the conductivity data. The percolation model of Triberis and Friedman applied to the small polaron hopping (SPH) regime is also consistent with data. The various model parameters such as density of states, hopping energy, etc., obtained from the best fits were found to be consistent with the glass compositions.     

畸变对hopping电导的影响：Thue Morse纳米结构模型

发展实空间重正化群方法，研究了一维非周期Thue Morse纳米结构链的hopping电导率.计算表明Thue Morse纳米结构体系的晶粒种类、晶粒尺寸对hopping电导有显著的调制作用，界面结构和晶格畸变对hopping电导也有不同程度的影响.从无序度对hopping电导的影响来看，Thue Morse纳米结构链的无序度介于Fibonacci链和周期链之间. 关键词： Thue Morse纳米结构链 重正化群方法 hopping电导 尺寸效应 界面效应     

Effect of hopping rate and jump length of hopping electrons on the conductivity and dielectric properties of Co–Cd ferrite

The cobalt cadmium ferrite has an n-type conductivity. As the Cd addition (x) increases, the hopping rate increases and so the conductivity increases up to x=0.5. A sudden decrease in the hopping rate occurs above x=0.5 due to the decrease of Co²⁺ ions on octahedral sites. Above x=0.7, the hopping rate increases again and the conductivity increases. As the hopping length increases the conductivity decreases, i.e. conductivity is inversely proportional to hopping length, but is directly proportional to the hopping rate of electrons. As the ferrous ions increase on octahedral sites, the conductivity increases and the jumping length decreases leading to the increase of dielectric constant.     

The electrical property dependence of disordered copper oxide on oxygen content

We have deposited disordered copper oxide films on glass substrates, with varying oxygen to copper ratios, by the reactive sputtering method. The variation in the ratio is enough to take the system from having disordered metallic like conduction at low oxygen content to hopping like behaviour at higher oxygen content. The hopping like behaviour is described by an unusual band structure, where Mott-variable range hopping is seen at lower temperatures and electron-electron variable range hopping at higher temperatures in some samples. The metallic region shows the expected effects of quantum corrections to the conductivity, with the often seen influence of spin-orbit scattering in copper. The transition between the hopping and metallic state is of the percolation type, where the conduction path between Cu islands is broken as the oxygen content increases.     

Quantum Trajectory Approach to Molecular Dynamics Simulation with Surface Hopping

In this work we propose a quantum trajectory approach to the powerful molecular dynamics simulation with surface hopping, from an insight that an effective “observation” is actually implied in the simulation through tracking the forces experienced, just like checking the meter's result in quantum measurement process. This treatment can build the nonadiabatic surface hopping on a physical foundation, instead of the usual fictitious and conceptually inconsistent hopping algorithms. The effects and advantages of the proposed scheme are preliminarily illustrated by a two-surface model system.     

Hopping motion of chlorine atoms on Si(1 0 0)-(2 × 1) surfaces induced by carrier injection from scanning tunneling microscope tips

Injection of tunneling electrons and holes from the probe tips of a scanning tunneling microscope was found to enhance the hopping motion of Cl atoms between neighboring dangling-bond sites of Si dimers on Si(1 0 0)-(2 × 1) surfaces, featured by the rate of hopping linearly dependent on the injection current. The hopping rate formed peaks at sample biases of V_S∼+1.25 and −0.85 V, which agree with the peaks in the local density of states spectrum measured by scanning tunneling spectroscopy. The Cl hopping was enhanced at Cl-adsorbed sites even remote from the injection point. The Cl hopping by hole injection was more efficiently enhanced by sweeping the tip along the Si dimer row than by tip-sweeping along the perpendicular direction. Such anisotropy, on the other hand, was insignificant in the electron injection case. All of these findings can be interpreted by the model that the holes injected primarily into a surface band originated from the dangling bonds of Si dimers propagate quite anisotropically along the surface, and become localized at Cl sites somehow to destabilize the Si-Cl bonds causing hopping of the Cl atoms. The electrons injected into a bulk band propagate in an isotropic manner and then get resonantly trapped at Si-Cl antibonding orbitals, resulting in bond destabilization and hopping of the Cl atoms.     

Variable range hopping mechanism in band-tail states of feldspars: A time-resolved IRSL study

Time-resolved infra-red stimulated luminescence (TR-IRSL) technique enables an understanding of the dynamics of trapped electrons after IR excitation in the band-tail states of feldspar. This work intends to study the underlying physical mechanism of IRSL production. TR-IRSL studies were carried out on four feldspar mineral specimens of variable chemical composition and structural state. Assuming the IR excited trapped electrons make random walks in the band-tail states and recombine by tunnelling dynamically, hopping time is derived from the OFF time data of TR-IRSL. This analysis indicates that the hopping time decreases with stimulation temperature. Using Einstein diffusion equation, hopping probability is computed and is shown to obey the equation describing variable range hopping mechanism of Mott kind. Mott's parameters (hopping length and hopping energy) are then derived. Hopping length decreases with stimulation temperature whereas hopping energy increases with temperature. The average hopping length and energy are in the range of 11–18 Å and 45–55 meV respectively and the diffusion constant is estimated to be in the range of 10^?10–10^?9 cm² s^?1 for all the feldspar samples.     

光回馈Nd:YAG激光器中的多模跳变现象

研究了Nd:YAG激光器中光回馈引起的多模跳变现象.光回馈调制了激光器不同纵模的阈值增益，阈值增益最低的纵模获得振荡.在外腔调谐过程中，当振荡模式的阈值增益高于相邻模式的阈值增益时产生模跳变，光强调制曲线出现相应的波动.各跳变纵模在增益曲线上的位置不同，导致模跳变点位置不同，相应的光强调制曲线也不同.越靠近中心频率的纵模，其光强信号峰值越大，该纵模持续振荡时间也就越长.当两跳变纵模关于中心频率对称时，其光强信号峰值相等，纵模持续振荡时间也相等. 关键词： 自混合干涉 模跳变 光回馈 阈值增益     

Modal decomposition of hopping states in cellular flames

We use Karhunen-Loeve (KL) decomposition of video images from an experiment to analyze a spatiotemporal dynamic state, unique to cellular flames, referred to as a "hopping state." Ordered states of cellular flames on a circular burner consist of one or two concentric rings of luminous cells. The hopping states correspond to the motions of individual cells in a ring sequentially executing abrupt changes in their angular position, while the other cells in the ring remain symmetric and at rest. KL decomposition separates the spatial and temporal characteristics of the hopping motion. The underlying symmetries of the experiment allow us to deduce a set of normal form equations that describe the formation of these states. We find that they result from secondary bifurcations connecting two primary branches of traveling waves. The solutions corresponding to hopping states exist as mixed-mode solutions away from the secondary bifurcations. (c) 1999 American Institute of Physics.     

Multiphonon hopping of carriers in CuO thin films

We have performed a detailed study of the electrical conduction process in CuO thin films deposited by the sol-gel dip coating technique in a temperature range 280-420 K. The electrical conduction is analyzed within the framework of various hopping conduction models. Multiphonon hopping conduction mechanism is found to dominate the electrical transport in the entire temperature region. Our results are consistent with this model of hopping conduction mechanisms with weak carrier-lattice coupling.