Structural modulation and physical properties of cobalt-doped layered La_2M_5As_3O_2(M=Cu,Ni) compounds

We investigate the structural variation and physical properties of layered La_2M_5As_3O_2(M=Cu,Ni) compound upon Co doping. It is found that the substitution of Co ion just induces the monotonous change of lattice constants without observing the anomalous kink in superconducting La_2(Cu~(1-x)Nix)_5 As_3O_2 solid-solutions. Meanwhile, this doping barely changes As–As bond length in [M_5As_3]~(2-) subunit(±2%), being significantly smaller than 7% shrinkage of that in La_2(Cu~(1-x)Nix)_5 As_3 O_2. Therefore, the doping dependence of crystal structure exhibits similar trend with Ba~(1-x)K_xFe_2 As_2 without the interference of As1–As 2 bonding, implying that the Co substitution for Cu/Ni is hole-doped. In terms of physical property, La2(Cu1-xCox)~5As_3O_2 turns into itinerant ferromagnetic metal, while La2(Ni1-x Cox)5 As3 O2 shows paramagnetism and suppressed structural phase transition upon Co-doping. The distinct structural variation and absence of superconductivity provide important clues to understand the effect of As–As bond in [M_5 As_3]~(2-) subunit.     

基于XPS对硫铁矿去除SeO2-3的机理研究

硒是动植物及人体生长必需的十五种微量元素之一，具有清除体内自由基、抗氧化、增强免疫力等功能，但其安全剂量的范围却很窄。利用扫描电子显微镜（SEM）和X射线衍射仪（XRD）对湿法球磨制备的硫铁矿形貌进行了表征。SEM观测发现加乙醇助磨后的硫铁矿为粒径大小较均匀的球形颗粒团聚体，粒径范围在17～200 nm之间，平均粒径138 nm。XRD衍射图谱中的特征峰与FeS₂衍射图谱中各峰位置基本一致，因此判定硫铁矿中主要化学组分为FeS₂，且图谱中基本没有杂峰，表明制备过程中并未混入杂质，样品纯度较高。实验结果表明，该法制备的硫铁矿具有颗粒粒径小、比表面积大、反应活性高等优点。研究中利用X射线光电子能谱仪（XPS）对硫铁矿去除水体中SeO2-₃的机理进行了研究。研究结果表明, （1）在较为广泛的实验pH范围（pH 2.2～11.5），硫铁矿均能有效去除水体中SeO2-₃，去除效率（除pH值7.8以外）均达到90%以上；（2）硫铁矿与SeO2-₃发生反应后，其主要组成元素的XPS特征峰结合能有所减小，表明硫铁矿表面发生了一定化学变化；（3）酸碱环境下硫铁矿去除SeO2-₃的机理不完全相同，酸性环境下，硫铁矿对SeO2-₃的去除是单纯的氧化还原过程，即硫铁矿中被酸活化的S2-₂将SeO2-₃还原为单质Se(0)，并且酸性越强，SeO2-₃去除效果越好；碱性环境下，SeO2-₃的去除过程中氧化还原与络合反应并存，硫铁矿表面有络合态Fe(OH)SeO₃和单质Se(0)两种存在形态，且碱性越强，络合态Fe(OH)SeO₃含量越高。以上研究结果为硫铁矿去除固定水体和土壤中以SeO2-₃为代表的可变价金属阴离子提供重要理论依据和应用基础。     

Cu1-xHxZr2(PO4)3中Cu2+的EPR谱和局域结构研究

本文采用Cu²⁺斜方对称电子顺磁共振（EPR）参量的高阶微扰公式计算了晶体Cu_1-xH_xZr₂（PO₄）₃中Cu²⁺的EPR参量（g因子和超精细结构常数A因子）．计算结果表明，晶体Cu_1-xH_xZr₂（PO₄）₃中[CuO₆]^10-基团的Cu-O键长分别为R_||≈0.241 nm，R_⊥≈0.215 nm，平面键角τ≈80.1°；由于对称性降低，中心金属离子基态²A_1g（θ）和²A_1g（ε）有一定程度混合，混合系数α≈0.995．所得EPR谱图的理论计算值与实验数据符合得很好．     

Realization of semiconducting Cu2Se by direct selenization of Cu(111)

Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu₂Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu₂Se. The observed moiré pattern indicates a lattice mismatch between Cu₂Se and the underlying Cu(111)-$\sqrt{3}$×$\sqrt{3}$ surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu₂Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu₂Se is a semiconductor with an indirect band gap of ～ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.     

CuTe,Cu2和Cu2Te的结构与势能函数

在Cu和Te的RECP(Relativistic Effective Core Potential)近似下,运用B3LYP方法,在LANL2DZ基组水平上对CuTe,Cu₂和Cu₂Te分子体系的结构进行优化计算.结果表明,CuTe和Cu₂分子的基电子状态分别为²Π和¹∑_g⁺,Cu₂Te分子的基态为单重态的C_2V构型,其电子状态为¹A₁.同时还计算了Cu₂Te分子基态的离解能、力常数和振动频率.采用最小二乘法拟合出CuTe和Cu₂分子Murrell-Sorbie势能函数参数.在此基础上,运用多体展式理论方法导出Cu₂Te分子基态势能函数的解析表达式,其势能面准确复现了平衡态的结构特征.     

杂多阴离子的NMR和ESR研究——P-V-W Keggin阴离子的31P、51V、17O-NMR谱

本文合成了六种含有P-V-W和V-V-W Keggin结构的杂多阴离子,并研究了它们的³¹P、⁵¹V、¹⁷O-NMR谱,对于PV_xW_12-xO₄₀^(x+3)-(x=1~4)阴离子,当x=1时,³¹P和⁵¹V-NMR谱只有一条线,并且此线化学位移和pH无关。当x ≥ 2时,谱线数目随着x迅速增加,其原因是几何异构体的数目和类型迅速增加。它们的化学位移δ_p,和δ_v。依赖于溶液的酸性和x,即δ_p,随pH值和x增加而减少,而δ_v,却随pH和x的增加而增加。最后简短讨论了桥氧上质子化的影响。     

Ca~(2+)掺杂对SmFeO_3的介电、铁磁特性及磁相变温度的影响

采用固相反应法制备Sm_(1-x)Ca_xFeO_3(x=0,0.1,0.2,0.3)样品,研究Ca~(2+)掺杂对SmFeO_3介电性能、铁磁性及磁相变温度的影响.X射线衍射图谱分析表明:所有样品的主衍射峰与SmFe03相符合且具有良好的晶体结构.随着x的增加,SmFeO_3样品的晶粒尺寸由原来的0.5μm逐渐增大到2μm.当f=1 kHz时,Sm_(1-x)Ca_xFeO_3(x=0.1,0.2,0.3)样品的ε_r分别是SmFe03的5倍、3倍和2.6倍,而tgσ增大一个数量级.在3T磁场作用下,SmFe03样品的M-H呈线性,随着x的增加,M-H逐渐趋向饱和,Sm_(1-x)Ca_xFeO_3(x=0.1,0.2,0.3)样品的M_r分别是SmFeO_3的20倍、31倍和68倍.X射线光电子能谱分析表明:Fe~(2+)和Fe3+共存于Sm_(1-x)Ca_xFeO_3样品中,Fe~(2+)/Fe~(3+)比例随着x的增加而增大,证明Ca~(2+)掺杂增加了Fe~(2+)的含量,形成Fe~(2+)—O~(2-)—Fe~(3+)超交换作用,增强SmFe03的铁磁特性.测量了Sm_(1-x)Ca_xFeO_3样品在外加磁场为1000 Oe(1 Oe=79.5775 A/m)的M-T变化关系,观测到其自旋重组温度(T_(SR))和尼尔温度(T_N)分别为438 K和687 K,发现SmFe03样品的T_(SR)和T_N均随着x的增加向低温方向移动,当x=0.3时,自旋重组现象消失.这主要是SmFeO_3样品磁结构的稳定性和Fe~(3+)—O~(2-)—Fe~(3+)及Sm~(3+)—O~(2-)—Fe~(3+)超交换三者共同作用的结果.     

Cu/CeO2(110)界面特性的第一性原理研究

Cu-CeO₂体系因其特殊的催化能力而在固体氧化物燃料电池和水煤气转化反应等多个催化领域有重要应用. 采用基于密度泛函理论的第一性原理方法, 在原子和电子层面上系统地研究了单个Cu原子及Cu小团簇在CeO₂(110)面上的吸附构型, 价键特性和电子结构, 结果表明: 1) 单个Cu原子的最稳定吸附位是两个表面O的桥位; 2) Cu团簇的稳定吸附构型为扭曲的四面体结构; 3) Cu原子及Cu团簇的吸附在CeO₂(110)面的gap区域引入了间隙态, 这些间隙态主要来自于Cu及其近邻的O和表层还原形成的Ce³⁺, 间隙态的出现表明Cu的吸附增强了CeO₂(110)表面的活性; 4) 吸附的单个Cu原子及Cu团簇分别被CeO₂(110)面表层的Ce⁴⁺离子氧化形成了Cu^δ+和Cu₄^δ+, 并伴随着Ce³⁺离子的形成, 这个反应可归结为Cu_x/Ce⁴⁺→Cu_x^δ+/Ce³⁺; 5) Cu团簇的吸附比Cu单原子的吸附引入了更多的Ce³⁺离子, 进而形成了更多的Cu^δ+-Ce³⁺催化活性中心. 结合已报道的Cu/CeO₂(111)界面特性, 更加全面地探明了Cu与CeO₂(111)和(110)两个较稳定低指数表面的协同作用特性, 较为系统地揭示了Cu增强CeO₂催化特性的原因及Cu与CeO₂协同作用的内在机理. 关键词： 2')" href="#">Cu/CeO₂ U')" href="#">DFT+U 吸附 电子结构     

Doping effect on the structure and physical properties of quasi-one-dimensional compounds Ba_9Co_3(Se_(1-x)S_x)15(x=0–0.2)

A series of samples of Ba_9Co_3(Se_(1-x)S_x)15 (x=0,0.05,0.1,0.15,0.2) with quasi-one-dimensional (1D) structure were successfully synthesized under high-temperature and high-pressure conditions.The influence of partial substitution of S for Se on the structure,electronic transport,and magnetic properties of Ba_9Co_3(Se_(1-x)S_x)15 has been investigated in detail.The x-ray diffraction data shows that the lattice constant decreases linearly with increasing S-doping level,which follows the Vegrad’s law.The doped S atoms preferentially occupy the site of Se atoms in CoSe_6 octahedron.Physical properties measurements indicate that all the samples of Ba_9Co_3(Se_(1-x)S_x)15 are semiconducting and display spin glass behavior.As the replacement of Se by smaller size S,although the inter-chain distance decreases,the electronic hopping between CoSe/S_6 chains is weakened and leads to an increase of band gap from 0.75 e V to 0.86 e V,since the S-3p electrons are more localized than Se-4p ones.Ba_9Co_3(Se_(1-x)S_x)15 exhibits 1D conducting chain characteristic.     

Synthesis of ternary compound in H-S-Se system at high pressures

The chemical reaction products of elemental sulfur (S), selenium (Se), and molecular hydrogen (H₂) at high pressures and room temperature are probed by Raman spectroscopy. Two known compounds H₂S and H₂Se can be synthesized after laser heating at pressures lower than 1 GPa. Under further compression at room temperature, an H₂S-H₂Se and an H₂S-H₂Se-H₂ van der Waals compounds are synthesized at 4 GPa and 6 GPa, respectively. The later is of guest-host structure and can be identified as (H₂S)_x(H₂Se)_(2-x)H₂. It can be maintained up to 37 GPa at least, and the stability of its H₂Se molecules is extended:the H-Se stretching mode can be detected at least to 36 GPa but disappears at 22 GPa in (H₂Se)₂H₂. The pressure dependence of S-H and Se-H stretching modes of this ternary compound is in line with that of (H₂S)₂H₂ and (H₂Se)₂H₂, respectively. However, its hydrogen subsystem only shows the relevance to (H₂S)₂H₂, indicating that this ternary compound can be viewed as H₂Se-replaced partial H₂S of (H₂S)₂H₂.     

热-电应力下Cu/Ni/SnAg_(1.8)/Cu倒装铜柱凸点界面行为及失效机理

微互连铜柱凸点因其密度高、导电性好、噪声小被广泛应用于存储芯片、高性能计算芯片等封装领域,研究铜柱凸点界面行为对明确其失效机理和组织演变规律、提升倒装封装可靠性具有重要意义.采用热电应力实验、在线电学监测、红外热像测试和微观组织分析等方法,研究Cu/Ni/SnAg_1.8/Cu微互连倒装铜凸点在温度100—150℃、电流密度2×10~4—3×10~4 A/cm~2热电应力下的互连界面行为、寿命分布、失效机理及其影响因素.铜柱凸点在热电应力下的界面行为可分为Cu_6Sn_5生长和Sn焊料消耗、Cu_6Sn_5转化成Cu_3Sn、空洞形成及裂纹扩展3个阶段,Cu_6Sn_5转化为Cu_3Sn的速率与电流密度正相关.热电应力下,铜凸点互连存在Cu焊盘消耗、焊料完全合金化成Cu_3Sn、阴极镍镀层侵蚀和层状空洞4种失效模式.基板侧Cu焊盘和铜柱侧Ni镀层的溶解消耗具有极性效应,当Cu焊盘位于阴极时,电迁移方向与热迁移方向相同,加速Cu焊盘的溶解以及Cu_3Sn生长,当Ni层为阴极时,电迁移促进Ni层的消耗,在150℃,2.5×10~4 A/cm~2下经历2.5h后,Ni阻挡层出现溃口,导致Ni层一侧的铜柱基材迅速转化成(Cu_x,Ni_y)_6Sn_5和Cu_3Sn合金.铜柱凸点互连寿命较好地服从2参数威布尔分布,形状参数为7.78,为典型的累积耗损失效特征.研究结果表明:相比单一高温应力,热电综合应力显著加速并改变了铜柱互连界面金属间化合物的生长行为和失效机制.     

Ga掺杂对Cu_3SbSe_4热电性能的影响

采用熔融-淬火方法制备了Cu_(2.95)Ga_xSb_(1-x)Se_4(x=0,0.01,0.02和0.04)样品,系统地研究了Ga在Sb位掺杂对Cu_3SbSe_4热电性能的影响.研究结果表明,少量的Ga掺杂(x=0.01)可以有效提高空穴浓度,抑制本征激发,改善样品的电输运性能.掺Ga样品在625 K时功率因子达到最大值10μW/cm·K~2,比未掺Ga的Cu_(2.95)SbSe_4样品提高了约一倍.但是随着Ga掺杂浓度的进一步提高,缺陷对载流子的散射增强,同时载流子有效质量增大,导致载流子迁移率急剧下降.因此Ga含量增加反而使样品的电性能恶化.在热输运方面,Ga掺杂可以有效降低双极扩散对热导率的贡献,同时掺杂引入的点缺陷对高频声子有较强的散射作用,因此高温区的热导率明显降低.最终该体系在664 K时获得最大ZT值0.53,比未掺Ga的样品提高了近50%.     

Ni掺杂对Cu团簇结构稳定性的影响

采用密度泛函理论对Cu_n和Cu_n-1Ni(n=3-14)团簇的结构及稳定性进行研究.结果证明Cu_n(n=3-14)团簇的基态不是密实结构而是类似双平面的构型;计算表明:Ni掺杂增加了铜团簇的稳定性,Cu_nNi(n=2-13)团簇的最稳态结构与单质铜团簇不同而是以形成二十面体为基础的密实结构,Ni原子趋于和尽量多的Cu原子成键而最终陷入笼状团簇的中心;偶数个粒子的团簇具有相对高的稳定性,尤其Cu₃Ni,Cu₇Ni和Cu₉Ni;陷入笼状团簇内部的Ni原子带正电,使得位于表面的Cu原子带负电,从而增加了由这种团簇构成的材料的化学稳定性,如耐腐蚀性等.     

Mg原子修饰的封闭型六硼烷B6H62-储氢性质的研究

利用密度泛函理论的方法研究了Mg原子修饰的封闭型六 硼烷B₆H₆^2-吸附氢的性能. Mg可以稳定地结合在B₆H₆^2-上, 它可以吸附六个氢分子. 电荷转移所导致的Mg周围电场的增强和体系更大的偶极矩使 得MgB₆H₆^2-比MgB₆H₆具有更好的储氢性能, 储氢密度达到11.1 wt%, 氢分子的平均结合能在0.23 eV/H₂至0.34 eV/H₂之间. 结果表明可以通过控制金属-有机物体系的电荷态来增强电场, 进而改善其储氢性能. 关键词： 6H₆^2-团簇')" href="#">MgB₆H₆^2-团簇 密度泛函理论(DFT) 储氢性能 电荷态     

Ca$lt;sub$gt;2$lt;/sub$gt;Si（O$lt;sub$gt;4-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;N$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;）：Eu$lt;sup$gt;2+$lt;/sup$gt;绿色荧光粉的制备及其发光性能

利用在Ca-Si-O干凝胶前驱体中添加Si₃N₄的方法于非还原气氛下合成了含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺绿色荧光粉. 通过X射线衍射仪、扫描电子显微镜以及荧光分光光度计分别分析了产物的物相结构、颗粒形貌和发光性能. 结果显示,Si₃N₄与前驱体的混合物在非还原气氛（纯氮气）下于1100℃焙烧后获得含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺荧光粉,特别是其中Eu³⁺被还原为Eu²⁺,产物的晶体结构与βup -Ca₂SiO₄相一致. Ca₂Si（O_4-xN_x）：Eu²⁺能够被270–400 nm 范围内的紫外线有效激发,其发射光谱呈宽带发射. 随着N含量的增加,发射峰出现一定程度红移（501–504 nm）,而且发光强度显著提高. 当Eu²⁺浓度为0.25 mol%时发光强度达最大值,浓度超过0.25 mol%时,发光强度显著降低,出现浓度猝灭 效应. 关键词： 白光LED 荧光粉 溶胶凝胶法 3N₄')" href="#">Si₃N₄     

阴离子取代合成Sr3LaAxV3-xO12:Eu3+(A=Mo,W)白光荧光粉

通过高温固相法合成Sr₃LaA_xV_3-xO₁₂:Eu³⁺（A=Mo,W）荧光粉,利用MoO₄^2-和WO₄^2-取代基质中部分VO₄^3-,改变基质组成和结构,进而影响基质和激活剂Eu³⁺离子的发光性能。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和荧光分光光度计对所合成样品的物相、形貌、荧光性能及荧光寿命进行表征。研究表明,MoO₄^2-和WO₄^2-的部分掺杂对基质发光位置和强度均有影响,能明显减弱VO₄^3-的发光,但对Eu³⁺离子发光影响不大,添加电荷补偿剂F^-可以加强VO₄^3-对Eu³⁺离子的能量传递。通过调整基质VO₄^3-发光和Eu³⁺离子发光,可以得到单一基质的白光荧光粉。初步探讨了阴离子掺杂对Eu³⁺离子红光发射增强的机理。     

多铁材料Bi1-xCaxFeO3的介电、铁磁特性和高温磁相变

采用溶胶凝胶法制备Bi_1-xCa_xFeO₃ (x=0, 0.05, 0.1, 0.15, 0.2)陶瓷样品. X衍射图谱表明所有样品的主衍射峰均与纯相BiFeO₃相符合且具有良好的晶体结构. 随着x的增大, Bi_1-xCa_xFeO₃样品的主衍射峰由双峰(104)与(110) 逐渐重叠为单峰(110), 当x ≥0.15时, 样品呈现正方晶系结构; 扫描电镜形貌分析可知, 晶粒由原来的0.5 μm逐渐增大到2 μm. Bi_1-xCa_xFeO₃样品介电常数和介电损耗随着x 的增加先增大而后减小. 当f=1 kHz, Bi_0.9Ca_0.1FeO₃ 的介电常数达到最大值, 是BiFeO₃的7.5倍, 而Bi_0.8Ca_0.2FeO₃的介电常数达到最小值, 仅仅是BiFeO₃的十分之一. Bi_1-xCa_xFeO₃样品所呈现的介电特性是由偶极子取向极化和空间电荷限制电流两种极化机理共同作用的结果. 随着Ca²⁺ 的引入, BiFeO₃ 样品的铁磁性显著提高. X射线光电子能谱图表明Fe²⁺和Fe³⁺ 共存于Bi_1-xCa_xFeO₃ 样品中, Fe²⁺/Fe³⁺比例随着Ca²⁺ 掺杂量的增加而增大, 证明Ca²⁺掺杂增加了Fe²⁺的含量, 增强BiFeO₃的铁磁特性. 从M-T曲线观察到BiFeO₃样品在878 K附近发生铁磁相变, 示差扫描量热法测试再次证明BiFeO₃ 在878 K发生相变. Ca²⁺掺杂使BiFeO₃样品的T_N略有变化而T_M基本不变, 其主要原因是Fe-O-Fe反铁磁超交换作用的强弱和磁结构相对稳定.     

钙钛矿锰氧化物(La1-xGdx)4/3Sr5/3Mn2O7 (x=0, 0.025) 磁性和输运性质研究

采用传统的高温固相烧结法制备了双层钙钛矿锰氧化物(La_1-xGd_x)_4/3Sr_5/3Mn₂ O₇ (x=0, 0.025)多晶样品. 通过X射线衍射仪研究发现样品为Sr₃Ti₂O₇型四方结构, 空间群为I4/mmm; 磁性测量表明, Gd³⁺掺杂后的样品(La_0.975Gd_0.025)_4/3Sr_5/3Mn₂O₇的三维磁有序转变温度(T_C1^3D)、磁化强度(M)均降低, 这是由于Gd³⁺的掺杂引起晶格的畸变, 从而使得晶格常数发生改变, 减弱了铁磁耦合而导致的; 通过电子自旋共振谱测量发现, 在T_C^3D<T<300 K温度范围内, 两样品在顺磁的基体上均有短程的铁磁团簇存在, 出现了相分离现象. 电性测量表明: 两样品分别在T_C1^3D (La_4/3Sr_5/3Mn₂O₇ 样品的三维磁有序转变温度, T_C0^3D)<T<300 K温度范围内均以三维变程跳跃的方式导电, 分析得出Gd³⁺的掺杂使得载流子局域长度的减小. 这表明载流子需要吸收更多的能量才能克服晶格的束缚进行跳跃, 因此(La_0.975Gd_0.025)_4/3Sr_5/3Mn₂ O₇ 样品的电阻较高.     

The ΔNγ electromagnetic transition form factors GM(q) and GE(q)

A parameter-free, nonperturbative calculation of the ΔNγ electromagnetic transition amplitudes GM*(q2), GE*(q2), and the resonant multipole ratio REM(q2)≡E1+3/2(q2)/M1+3/2(q2) is performed in terms of the well-known nucleon isovector Sachs form factor GMV. Our methods are fully relativistic with conservation of the electromagnetic current guaranteed. We find that GM*(q2) decreases more rapidly than the nucleon dipole form factor when −q21 GeV2/c2 and that REM(q2) remains small even for very high four-momentum transfer implying that the perturbative QCD prediction REM(q2)→1 is purely asymptotic and is valid only for extremely high |q2|.     

Scalable fabrication of Bi_2O_2Se polycrystalline thin film for near-infrared optoelectronic devices applications

We present a controlled, stepwise formation of layered semiconductor Bi_2O_2 Se thin films prepared via the vapour process by annealing topological insulator Bi_2Se_3 thin films in low oxygen atmosphere for different reactions. Photodetectors based on Bi_2O_2 Se thin film show a responsivity of 1.7×10~4 A/W at a wavelength of 980 nm. Field-effect transistors based on Bi_2O_2 Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm~2/V·s. In addition, the electrical properties of the devices after 4 months keeping in the air shows little change, implying outstanding air-stability of our Bi_2O_2 Se thin films. From the obtained results, it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi_2O_2 Se thin films for integrated optoelectronic applications.