Silicon donor and Stokes terahertz lasers

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50-230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (<30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain ∼1-3 cm⁻¹ above the laser thresholds (>1 kW cm⁻²) and provide 10 ps-1 μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6-5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A₁) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm GW⁻¹ and the optical threshold intensity is ∼100 kW cm⁻².     

Generation of high average power 1 kHz shaped THz pulses via optical rectification

Generation of near single-cycle THz pulses from lithium niobate with 3.3 μJ energy, 3.3 mW average power, 1.2 THz central frequency and 4 MW peak power was demonstrated by tilting the intensity front of the pump pulses from a 1 kHz Ti:sapphire laser. THz pulse intensity as high as 200 MW/cm² was achieved. The energy conversion efficiency was 7 × 10⁻⁴. The capability of the present scheme to generate high energy shaped THz pulses was also demonstrated by using a sequence of optical pump pulses.     

Determination of the refractive index over a wide wavelength range through time-delay measurements of femtosecond pulses

We present a simple method to measure the refractive index dispersion over a broad wavelength range (0.6-1.6 μm). In a first step, the optical group indices are obtained by measuring the time-retardation of tunable 150 fs laser pulses within a sample relative to air. The refractive index dispersion is then calculated using a Sellmeier equation that describes the measured group index dispersion. We show that our experimental data agree with previously published results to within 2 × 10⁻⁴ for a 3 mm thick sample of fused silica and to within 3 × 10⁻³ for the index n₁ of a 2 mm thick crystal of the highly dispersive and anisotropic organic crystal 4-N,N-dimethylamino-4′-N′-methyl stilbazolium tosylate (DAST).     

Terahertz dichroism of MBBA liquid crystal on rubbed substrate

Terahertz (THz) dichroism of a nematic liquid N-(p-methoxybenzylidene)-p-butylaniline (MBBA) was measured using a GaP Raman THz spectrometer. MBBA on a rubbed plastic substrate generates a band at around 4.0 THz: its liquid crystal phase shows strong dichroism, which well corresponds to that of the IR absorption caused by π(CH) of MBBA molecule reported in the literature. Based on inferences drawn from the present THz and the published IR dichroic results, the 4.0 THz band probably stems from lateral intermolecular or intramolecular interactions of MBBA molecules aligned to the rubbing direction. The results clearly demonstrate that THz spectroscopy is powerful for discussing of phase transition and dichroism of liquid crystals.     

Synthesis, characterization and studies on the nonlinear optical parameters of hydrazones

Three hydrazones, 2-(4-methylphenoxy)-N′-[(1E)-(4-nitrophenyl)methylene]acetohydrazide (compound-1), 2-(4-methylphenoxy)-N′-[(1E)-(4-methylphenyl)methylene]acetohydrazide ((compound-2) and N′-{(1E)-[4-(dimethylamino)phenyl]methylene}-2-(4-ethylphenoxy) acetohydrazide(compound-3) were synthesized and their third order nonlinear optical properties were investigated using a single beam z-scan technique with nanosecond laser pulses at 532 nm. Open aperture data obtained from the three compounds indicates two photon absorption at this wavelength. The nonlinear refractive index n₂, the nonlinear absorption coefficient β, the magnitude of the effective third order susceptibility χ⁽³⁾, the second order hyperpolarizability γ_h and the coupling factor ρ have been estimated. The values obtained are comparable with the values obtained for 4-methoxy chalcone derivatives and dibenzylidene acetone derivatives. Among the compounds studied, compounds-1 and 3 exhibited the better optical power limiting behaviour at 532 nm. Our studies suggest that compounds-1, 2 and 3 are potential candidates for optical device applications such as optical limiters and optical switches.     

Temperature dependent narrow-band terahertz pulse generation in periodically poled crystals via difference frequency generation

Femtosecond optical pulse is used to generate narrow-band terahertz pulses depending on a quasi-phase-matched condition in periodically poled lithium niobate (PPLN) and stoichiometric lithium tantalate (PPSLT) crystals by difference frequency generation. The origin of narrow-band THz generation proved that the two frequency components of the fs pulse contribute to the frequency mixing. By cryogenic cooling, the absorption of THz waves in the crystal is significantly reduced which results in efficient THz generation. Simultaneously generated forward and backward THz pulses were 1.38 and 0.65 THz with as narrow as the bandwidth of 32 GHz in the PPSLT sample. Temperature dependence of the generated THz waveforms had good agreement with the simulation result using one dimensional plane-wave propagation model.     

Subwavelength ripple formation induced by tightly focused femtosecond laser radiation

Subwavelength ripples (<λ/4) are obtained by scanning a tightly focused beam (∼1 μm) of femtosecond laser radiation (λ = 800 nm, t_p = 100 fs) over the surface of either bulk fused silica and silicon and Er:BaTiO₃. The ripple pattern extends coherently over many overlapping laser pulses parallel and perpendicular to the polarisation. Investigated are the dependence of the ripple spacing on the spacing of successive pulses, the direction of polarisation and the material. The evolution of the ripples is investigated by applying pulse bursts with N = 1 to 20 pulses. The conditions under which these phenomena occur are specified, and some possible mechanisms of ripple growth are discussed. Potential applications are presented.     

Design and analysis of a metallic waveguide with a DAST cap for continuously phase-matched terahertz difference frequency generation

We present a novel source for continuous terahertz (THz) wave generation using an organic ionic salt, 4-dimethylamino-N-methyl-4-stilbazolium-tosylate (DAST). THz waves are generated based on difference frequency generation (DFG) in the device. Phase matching condition and THz generation between 1.3 THz and 2.7 THz, for optical pump around 1.6 μm, are investigated. Our calculations predict that the device produces a relatively high THz output power of 11.07 μW from a 4 cm long waveguide at 2 THz.     

High-resolution spectroscopy using interleaved 100 GHz optical frequency comb scanned by phase modulator

A high-resolution spectroscopy technique is proposed with an optical phase modulator combined with an interleaved optical frequency comb. The optical phase modulator and a frequency-locked laser light guarantee a spectral resolution less than 1 MHz on an absolute frequency axis. A wide measurement frequency range was realized using a 25 GHz optical frequency comb lying over a 4 THz frequency region. An extraction of single tooth intensity from the comb was realized by a heterodyne technique with a frequency-tunable laser used as a local oscillator. Also, the 25 GHz optical frequency comb was interleaved to generate four 100-GHz combs for removing the crosstalk from the 25 GHz neighboring sidebands in the teeth. This proposed spectroscopy technique was experimentally demonstrated with a resonator of less than 1 MHz linewidth and a H¹³C¹⁴N gas cell. Thus, a measurement frequency range higher than 4 THz (1530 nm-1560 nm) was confirmed with an effective spectral resolution 100 kHz order. In addition, the characteristics of the proposed system were compared with those of the previous system with a single-sideband (SSB) optical modulator.     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Simultaneous generation and wavelength conversion of a pulse train from multi-wave mixing in an optical fibre

The insertion of three continuous-wave optical frequencies in a low-dispersion optical fibre resulted in the generation of a high-repetition-rate train of ultra-short pulses and its simultaneous wavelength conversion. Two of the frequencies were spaced by ∼0.17 THz and multi-wave mixing generated a frequency comb to which is associated a train of 1.6 ps pulses. Wave-mixing between the generated comb and the third input optical frequency then converts the pulse train into different wavelengths. The Split-Step Fourier method was applied to numerically simulate the generation/wavelength conversion and results are in good agreement with experiments.     

Magnetic properties of xNi0.53Cu0.12Zn0.35Fe1.88O4+(1−x)BaTiO3 nanocomposites

The nanocrystalline Ni_0.53Cu_0.12Zn_0.35Fe_1.88O₄ and BaTiO₃ powders were prepared using Microwave-Hydrothermal (M-H) method at 160 °C/45 min. The as synthesized powders were characterized using the X-ray diffraction (XRD) and Transmission Electron Microscope (TEM). The size of the powders that were synthesized using M-H system was found to be ∼30 and ∼50 nm for ferrite phase and ferroelectric phases, respectively. The powders were densified using microwave sintering method at 900 °C/30 min. The ferrite and ferroelectric phases were observed from XRD and morphology of the composites was observed with the Scanning Electron Microscope (SEM).The magnetic hysteresis loops were recorded using the Vibrating Sample Magnetometer (VSM).The frequency dependence of real (μ′) and imaginary (μ″) parts of permeability was measured in the range of 1 MHz-1.8 GHz. The permeability decreases with an increase of BaTiO₃ content at 1 MHz. The transition temperature (T_C) of ferrite was found to be 245 °C. The T_C of composite materials decreases with an increase in BaTiO₃ content.     

Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.     

Surface-emitted THz generation using a compact ultrashort pulse fiber amplifier at 1060 nm

Generation of InAs-surface-emitted terahertz radiation by application of an ultrashort pulse 1060 nm parabolic fiber amplifier source is reported for the first time. The fiber amplifier delivers 100 fs pulses at a repetition rate of 75 MHz and an average power of maximum 12 W. This new excitation laser for surface-emitters generates high brightness broadband THz radiation ranging from 100 GHz to over 2.5 THz. THz detection is demonstrated based on two-photon absorption at low-temperature-grown GaAs dipole receivers.     

Terahertz wave narrow bandpass filter based on photonic crystal

We designed a narrow bandpass terahertz wave filter using photonic crystals with a line defect. An inserted linear defect in one-dimensional photonic crystal structures for a channeled filtering in the terahertz range are studied and designed theoretically. By using transfer matrix method, we examined the transmittance spectra for the proposed terahertz wave filter has a 3 dB transmission loss bandwidth of 20 MHz ranging from 0.29998 THz to 0.30001 THz. The simulated results show that a very narrow transmission band and high transmission (higher than 99.99%) centered at λ₀, and very sharp edges can be achieved.     

Femtosecond laser micromachining in the conjugated polymer MEH-PPV

Femtosecond-laser micromachining of poly[2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] films is investigated using 130 fs pulses at 800 nm from a laser oscillator operating at 76 MHz repetition rate. We investigate the effect of pulse energy and translation speed on the depth and morphology of the micromachined regions. We quantified the MEH-PPV photobleaching induced by the fs-laser, and the conditions in which the emission of MEH-PPV is preserved after the micromaching.     

N incorporation and electronic structure in N-doped TiO2(1 1 0) rutile

We describe the growth and properties of well-defined epitaxial TiO_2−xN_x rutile for the first time. A mixed beam of atomic N and O radicals was prepared in an electron cyclotron resonance plasma source and Ti was supplied from a high-temperature effusion cell or an electron beam evaporator, depending on the required flux. A very high degree of structural quality is generally observed for films grown under optimized anion-rich conditions. N substitutes for O in the lattice, but only at the ∼1 at.% level, and is present as N³⁻. Epitaxial growth of TiO₂ and TiO_2−xN_x rutile prepared under anion-rich conditions is accompanied by Ti indiffusion, leading to interstitial Ti (Ti_i), which is a shallow donor in rutile. Our data strongly suggest that Ti_i donor electrons compensate holes associated with substitutional N²⁻ (i.e., Ti(III) + N²⁻ → Ti(IV) + N³⁻), leading to highly resistive or weakly n-type, but not p-type material. Ti 2p core-level line shape analysis reveals hybridization of N and Ti, as expected for substitutional N. Ti-N hybridized states fall in the gap just above the VBM, and extend the optical absorption well into the visible.     

Far-infrared cw difference-frequency generation using vertically integrated and planar low temperature grown GaAs photomixers: application to H<Subscript>2</Subscript>S rotational spectrum up to 3 THz

The generation of continuous coherent THz radiation by mixing two cw Ti:Sa laser beams with a well-controlled frequency separation for a new scheme of vertically integrated low temperature grown GaAs (LTG-GaAs) spiral photomixer is reported. For this new photomixer device used in THz emission, the LTG-GaAs active layer is sandwiched between the two parallel metal plates of a high-speed photodetector loaded by a broadband spiral antenna. We have exploited the advantage of a higher delivered power in the low part of the spectrum (<2000 GHz), while a low RC time constant planar interdigitated detector was used at the upper frequency. The performances of the spectroscopic setup in terms of spectral resolution (5 MHz), tunability and frequency capability are assessed by measurements of the pure rotational spectra of hydrogen sulfide (H₂S) up to 3000 GHz. PACS 73.40.Sx; 33.20.Bx; 39.30.+w     

High-resolution visible laser spectroscopy of HfF

The electronic spectrum of hafnium monofluoride has been investigated from 415 to 725 nm using a laser-ablation/molecular beam laser-induced fluorescence spectrometer. Several electronic systems were observed and data have been recorded at both low and high resolution. High resolution rotational analyses of the [17.4]1.5-X1.5 (0-0), [17.9]2.5-X1.5 (0-0), [19.7]0.5-X1.5 (0-0), [20.0]0.5-X1.5 (0-0), [21.1]2.5-X1.5 (0-0), [22.3]1.5-X1.5 (0-0), and [23.3]0.5-X1.5 (0-0) subbands have been carried out, resulting in accurate values for the ground and excited state effective rotational constants. Furthermore, the rotational analysis of the subbands assigned as [17.4]1.5-X1.5 (1-0) and [17.9]2.5-X1.5 (1-0) allows us to determine values of 589.7569(6) and 588.9076(6) cm⁻¹ for ΔG^′_1/2 [17.4] and ΔG^′_1/2 [17.9], respectively. From dispersed fluorescence data we find that ΔG^′′_1/2=670(13) cm⁻¹ for the ground state and that another low-lying electronic state lies at ∼2850 cm⁻¹. The data also suggests that a second low-lying electronic state lies at ∼5200 cm⁻¹ above the ground state.     

High-Q, tunable, photonic microwave single passband filter based on stimulated Brillouin scattering and fiber Bragg grating filtering

We experimentally demonstrate a single passband, photonic microwave bandpass filter scheme based on stimulated Brillouin scattering (SBS) in optical fiber. A single side band (SSB)-modulated probe and a single frequency, tunable pump beam that have been produced by the combination of conventional Mach-Zehnder modulators and fiber Bragg grating filters, are used for the generation of SBS phenomenon in a 1-km long highly nonlinear dispersion-shifted optical fiber. Using the proposed scheme a single microwave passband with a ∼26 MHz bandwidth is readily achieved over a radio frequency tuning range from 1.3 to 9.3 GHz. The maximum Q-factor is measured to be ∼360.