Nd:YAG晶体板条低透射波前误差加工技术

针对高平均功率固体激光器对Nd:YAG晶体板条的技术需求,进行了Nd:YAG晶体板条低透射波前误差加工技术研究。详细分析了光学加工过程中引起板条端面透射波前畸变的误差来源,并提出工艺技术解决方案。实验结果表明,在板条抛光阶段通过采用合成盘硬抛光工艺以及新的工件装夹技术,能够解决传统板条加工工艺在面形及楔角精度方面可控性差的问题,更容易实现Nd:YAG晶体板条的低透射波前误差加工。对于150mm×30mm×2.5mm规格的Nd:YAG晶体板条元件,端面透射波前畸变PV值达到0.74λ。     

Nd:YAG晶体板条低透射波前误差加工技术北大核心CSCD

针对高平均功率固体激光器对Nd:YAG晶体板条的技术需求,进行了Nd:YAG晶体板条低透射波前误差加工技术研究。详细分析了光学加工过程中引起板条端面透射波前畸变的误差来源,并提出工艺技术解决方案。实验结果表明,在板条抛光阶段通过采用合成盘硬抛光工艺以及新的工件装夹技术,能够解决传统板条加工工艺在面形及楔角精度方面可控性差的问题,更容易实现Nd:YAG晶体板条的低透射波前误差加工。对于150mm×30mm×2.5mm规格的Nd:YAG晶体板条元件,端面透射波前畸变PV值达到0.74λ。     

高功率激光晶体加工技术的研究

针对高功率激光器中使用的激光晶体关键元件,开展了晶体的先进加工技术的研究。根据LBO及YCOB晶体材料的加工特性,选取了定向切割、研磨、预抛光、磁流变抛光、合成盘抛光和机械化学抛光的总体技术路线。对不同种类晶体加工设计了不同的工艺路线,开展了相关加工工艺研究。其中LBO晶体的面形收敛工艺主要采用磁流变抛光,YCOB晶体的面形工艺主要采用合成盘抛光。通过组合加工工艺,获得了高质量的晶体加工指标,LBO晶体透射波前0.12λ(λ=632.8nm),粗糙度0.77nm;YCOB晶体面形0.11λ,粗糙度0.68nm。确定了晶体元件的整体加工技术路线,并对整个工艺流程开展了工艺实验研究,取得了较好的实验效果,实现了激光晶体的高质量加工指标。     

微楔形镜加工技术研究

微楔形镜的加工不能像平行平面元件那样,采用大块抛光,切片分割的办法。针对零件尺寸小、精度要求高的特点,研究了加工过程中的粘结上盘、面形精度控制和楔形角检测等技术,设计了吸附式粘结上盘和楔形角测量等专用装置,应用于尺寸为3×3×1mm(6°)的Nd∶YVO4(掺钕钒酸钇)晶体批量生产中,提高了零件的面形精度和加工可靠性。测试结果表明:面形精度优于λ/10(λ=632.8nm),表面光洁度达0/0级,楔形角合格率达98%以上。     

锗窗片的光学加工技术

加工平行平面锗窗片,采用双面研磨法修改平行度,用吸附方法粘结成盘,固着磨料抛光模粗抛,沥青抛光模精抛,解决了批量生产中等精度(平行度等于1!@)锗窗片的加工工艺。该工艺也适用于其他晶体材料的平面加工。     

3mm厚大口径超薄元件双面抛光工艺北大核心CSCD

基于环摆双面抛光技术,研究了3mm厚大口径超薄元件的双面抛光加工工艺。通过对双面抛光原理的分析,对转速比、抛光垫面形、抛光液等工艺参数上作了优化,并通过加工模拟进行验证。通过工件环分离器减薄技术解决了3mm厚超薄元件的装夹问题。在SYP152双面主动抛光机上进行了加工工艺实验,通过调节转速比实现3mm厚大口径超薄元件面形的高效收敛,验证了加工的可行性,并且达到了面形精度优于1.5λ(λ=632.8nm)、表面粗糙度优于1nm的技术水平。     

大口径反射元件环形抛光工艺

根据环形抛光的加工特点,研究了大口径反射元件的环形抛光加工工艺。在4 m环抛机上进行了610 mm440 mm85 mm的大口径反射元件加工工艺实验,研究了修正盘及工件盘转速与元件面形的关系、修正盘及工件盘位置与元件面形的关系、沥青盘槽形与元件面形的关系。研究结果表明,通过对修正盘及工件盘转速、修正盘及工件盘位置、沥青盘槽形等工艺参数的优化控制,能够得到大口径反射元件面形的高效收敛,元件最高面形精度优于/6(=632.8 nm),验证了加工工艺的有效性。     

大口径碳化硅反射镜数控抛光工艺北大核心CSCD

研究了针对600mm口径方形轻质碳化硅元件的数控抛光工艺过程,采用国产OP1000数控研磨抛光机床对一块600mm×480mm的方形碳化硅元件进行数控抛光加工。在经过两周的加工时间,碳化硅光学元件的通光口径均方根(RMS)值收敛到了35nm(大约为λ/18,λ=632.8nm)。在加工过程中针对大口径椭圆形碳化硅反射镜采用了合适的加工参数优化,例如在加工过程中的不同阶段选择了不同颗粒度的金刚石微粉作为特定阶段的抛光辅料以保证光学元件的表面粗糙度。对计算机控制数控加工技术的快速收敛过程也进行了阐释。     

多磨头数控抛光对大口径离轴抛物面镜中频误差的抑制

大口径非球面光学元件的面形中频误差对光路中的光斑扩散函数精度以及高能激光的能量散射有着直接的影响,针对该问题,提出一种计算机控制的多磨头组合抛光技术,用于对非球面元件中频误差的有效控制。对半刚性抛光盘抛光过程进行了力学有限元分析,并基于Bridging模型对半刚性抛光盘抛光过程进行了理论模拟,对其贴合特性进行了研究分析。实验结果表明:采用多磨头组合抛光的技术能够有效改善大尺寸非球面元件的面形中频误差,加工的两件?460 mm离轴抛物面元件面形PSD1值相对于之前降低了近70%,达到2.835 nm,并且PV小于0.16λ(632.8 nm),RMS小于0.02λ。     

反应烧结碳化硅平面反射镜的光学加工

介绍了100mm口径反应烧结碳化硅平面反射镜的光学加工工艺流程。按照流程依次介绍了在粗磨成形、细磨抛光和精磨抛光过程中使用的机床、磨具和磨料以及采用的工艺参数和检测方法。介绍了在光学加工各个步骤中应注意的问题。展示了加工后反应烧结碳化硅平面反射镜的实物照片。给出了面形精度和表面粗糙度的检测结果:面形精度(95%孔径)均方根值(RMS)为0.030λ(λ=632.8nm),表面粗糙度RMS值达到了1.14nm(测量区域大小为603 6μmⅹ448 4μm)。     

Mechanism of aluminum hydroxide layer formation by surface modification of aluminum

In this study, a new, relatively simple and rapid fabrication method for forming an Al(OH)₃ film on Al substrates was demonstrated. This method, i.e., alkali surface modification, is simply comprised of dipping the substrate in a 5 × 10⁻³ M NaOH solution at 80 °C for 1 min and then immersing it in boiling water for 30 min. After alkali surface modification, an Al(OH)₃ film was formed on Al substrate, and its chemical state and crystal structure were confirmed by XPS and TEM. The Al(OH)₃ layer was composed of three regions: an amorphous-rich region, a region of mixed amorphous and crystal domains, and a crystalline-rich region near the Al(OH)₃ layer surface.     

Solar cell fabrication using edge-defined film-fed growth (EFG) silicon wafers

The insufficient supply of polysilicon is limiting the growth of the segment of the photovoltaic industry using silicon materials. Because it is grown directly in the form of ribbon from a silicon melt, edge-defined film-fed growth (EFG) silicon ribbon is a promising alternative for cutting down wafer costs by reducing the polysilicon consumption and eliminating kerf loss. In this paper, we will discuss the various properties that can be achieved with for low cost and high-efficiency EFG silicon ribbon solar cell fabrication. Boron-doped p-type EFG ribbon silicon wafers with resistivities of 2-4 Ω cm and a size of 125 mm × 125 mm were used. The major fabrication steps we studied were mixed acid (HF, HNO₃, DI water) texturing, phosphorus diffusion with POCl₃, thermal oxide growth for surface passivation, laser process for edge isolation, and PECVD of SiN_x:H for surface passivation and antireflection coating. By optimizing the processing steps, we achieved a conversion efficiency, open circuit voltage, short circuit current, and fill factor as high as 14.5%, 584 mV, 32.1 mA/cm², and 77%, respectively.     

Yb3+:Gd2SiO5晶体的结构和光谱性能

采用提拉法成功生长尺寸为φ30 mm× 75 mm的15at.%Yb³⁺:Gd₂SiO₅单晶, 并用Reitveld全谱拟合方法确定了其晶格常数、原子坐标和温度因子等参数. 用吸收光谱计算了Yb³⁺离子²F_7/2↔ ²F_5/2能级跃迁的振子强度、谱线强度、跃迁概率、 能级寿命和积分发射截面等光谱参数, 并根据激光性能评估得出结论: 表明该晶体具有较大的阈值特性, 有望采用大功率激光二极管泵浦实现可调谐或超快激光输出.     

Scaling up the fabrication of wafer-scale Ni-MoS2/WS2 nanocomposite moulds using novel intermittent ultrasonic-assisted dual-bath micro-electroforming

In the scale-up fabrication process for electroformed Ni-MoS₂/WS₂ composite moulds, the formulation of nanosheets is critical, since the size, charge, and their distribution can largely affect the hardness, surface morphology and tribological properties of the moulds. Additionally, the long-term dispersion of hydrophobic MoS₂/WS₂ nanosheets in a nickel sulphamate solution is problematic. In this work, we studied the effect of ultrasonic power, processing time, surfactant types and concentrations on the properties of nanosheets to elaborate their dispersion mechanism and control their size and surface charge in divalent nickel electrolyte. The formulation of MoS₂/WS₂ nanosheets was optimized for effective electrodeposition along with nickel ions. A novel strategy of intermittent ultrasonication in the dual bath was proposed to resolve the problem of long-term dispersion, overheating, and deterioration of 2D material deposition under direct ultrasonication. Such strategy was then validated by electroforming 4-inch wafer-scale Ni-MoS₂/WS₂ nanocomposite moulds. The results indicated that the 2D materials were successfully co-deposited into composite moulds without any defects, along with the mould microhardness increasing by ∼2.8 times, the coefficient of friction reducing by two times against polymer materials, and the tool life increasing up to 8 times. This novel strategy will contribute to the industrial manufacturing of 2D material nanocomposites under ultrasonication process.     

Synthesis,growth and characterization of non-linear optical material: l-Tryptophan p-nitrophenol (LTPNP) single crystal

A new nonlinear optical organic crystal l-tryptophan p-nitrophenol (LTPNP) of dimension 19 mm × 2 mm × 1.5 mm has been grown from an aqueous solution for the first time by slow evaporation technique at ambient temperature. The crystal structure of LTPNP was confirmed by single crystal X-ray diffraction. LTPNP crystallizes in non-centrosymmetric monoclinic system with space group P₂₁. The recorded FTIR spectrum confirms the presence of various functional groups in the grown crystal and confirms the formation of LTPNP. Thermal stability and melting temperature of the LTPNP crystal were identified from TG/DTA analysis. The optical absorption study confirms the suitability of the crystal for device applications. LTPNP exhibits SHG efficiency over 1.7 orders of magnitude higher than that of urea and 4 orders of magnitude higher than that of KDP.     

Spectroscopic properties of Tm -doped Ba3Gd2(BO3)4 crystal

crystal with the size up to Φ 13 mm×44 mm was grown successfully by the Czochralski technique and its optical properties were presented. The absorption cross-section and emission cross-section were presented. Also, the potential laser gain near 1.9 μm was investigated. In the framework of the Judd-Ofelt (J-O) theory, the intensity parameters were calculated to be: Ω₂=11.375×10⁻²⁰ cm², Ω₄=5.077×10⁻²⁰ cm² and Ω₆=6.524×10⁻²⁰ cm². The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetime as well as the branching ratios were calculated, too. This crystal is promising as a tunable infrared laser crystal.     

Influence of SiNx:H film properties according to gas mixture ratios for crystalline silicon solar cells

The Hydrogenated silicon nitride (SiN_x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN_x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH₄ + NH₃ + N₂, SiH₄ + NH₃, SiH₄ + N₂), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH₄ + NH₃ + N₂ showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH₄ + NH₃ + N₂) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH₄ + NH₃ + N₂ is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.     

Crystal growth,structural, linear and nonlinear optical studies of 4-methyl-4′-N’-methylstilbazolium tosylate single crystals

Organic 4-methyl-4′-N’-methylstilbazolium tosylate, a new derivative of the stilbazolium tosylate family compound was synthesized by condensation method. The optical quality single crystals with dimension 5 mm × 4 mm × 2 mm were grown by slow evaporation technique at 40 °C. The crystal system and lattice parameters were found from single crystal X-ray diffraction studies. The optical transmittance, cut-off wavelength (402 nm) and band gap energy (3.09 eV) were estimated by UV–visible studies. The surface laser damage threshold study was carried out for MMST crystal using Nd:YAG laser. The third-order nonlinear optical susceptibility (χ³) for MMST crystal was estimated by employing Z-scan technique using 1064 nm laser.     

Heat generation ability in AC magnetic field of nano MgFe2O4-based ferrite powder prepared by bead milling

Nanosized MgFe₂O₄-based ferrite powder having heat generation ability in an AC magnetic field was prepared by bead milling and studied for thermal coagulation therapy applications. The crystal size and the particle size significantly decreased by bead milling. The heat generation ability in an AC magnetic field improved with the milling time, i.e. a decrease in crystal size. However, the heat generation ability decreased for excessively milled samples with crystal sizes of less than 5.5 nm. The highest heat ability (ΔT=34 °C) in the AC magnetic field (370 kHz, 1.77 kA/m) was obtained for fine MgFe₂O₄ powder having a ca. 6 nm crystal size (the samples were milled for 6-8 h using 0.1 mm ? beads). The heat generation of the samples was closely related to hysteresis loss, a B-H magnetic property. The reason for the high heat generation properties of the samples milled for 6-8 h using 0.1 mm ? beads was ascribed to the increase in hysteresis loss by the formation of a single domain. Moreover, the improvement in heating ability was obtained by calcination of the bead-milled sample at low temperature. In this case, the maximum heat generation (ΔT=41 °C) ability was obtained for a ca. 11 nm crystal size sample was prepared by crystal growth during the sample calcination. On the other hand, the ΔT value for Mg_0.5Ca_0.5Fe₂O₄ was synthesized using a reverse precipitation method decreased by bead milling.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.