Gate control of quantum dot-based electron spin–orbit qubits

We investigate theoretically the coherent spin dynamics of gate control of quantum dot-based electron spin–orbit qubits subjected to a tilted magnetic field under electric-dipole spin resonance (EDSR). Our results reveal that Rabi oscillation of qubit states can be manipulated electrically based on rapid gate control of SOC strength. The Rabi frequency is strongly dependent on the gate-induced electric field, the strength and orientation of the applied magnetic field. There are two major EDSR mechanisms. One arises from electric field-induced spin–orbit hybridization, and the other arises from magnetic field-induced energy-level crossing. The SOC introduced by the gate-induced electric field allows AC electric fields to drive coherent Rabi oscillations between spin-up and -down states. After the crossing of the energy-levels with the magnetic field, the spin-transfer crossing results in Rabi oscillation irrespective of whether or not the external electric field is present. The spin–orbit qubit is transferred into the orbit qubit. Rabi oscillation is anisotropic and periodic with respect to the tilted and in-plane orientation of the magnetic field originating from the interplay of the SOC, orbital, and Zeeman effects. The strong electrically-controlled SOC strength suggests the possibility for scalable applications of gate-controllable spin–orbit qubits.     

Intrinsic electron spin relaxation due to the D'yakonov–Perel' mechanism in monolayer MoS2

Intrinsic electron spin relaxation due to the D'yakonov–Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron–phonon scattering. The intervalley electron–phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.     

Direct spin–phonon coupling of spin-flip relaxation in quantum dots

Within the frame of the Pavlov–Firsov spin–phonon coupling model, we study the spin-flip assisted by the acoustical phonon scattering between the first-excited state and the ground state in quantum dots. We analyze the behaviors of the spin relaxation rates as a function of an external magnetic field and lateral radius of quantum dot. The different trends of the relaxation rates depending on the magnetic field and lateral radius are obtained, which may serve as a channel to distinguish the relaxation processes and thus control the spin state effectively.     

Effect of pressure relaxation during the laser heating and electron–ion relaxation stages

The multi-phase equation of state by Bushman et al. (Sov. Tech. Rev. 5:1–44, 2008) is modified to describe states with different electron and ion temperatures and it is applied to the non-equilibrium evolution of an aluminum sample heated by a subpicosecond laser pulse. The sample evolution is described by the two-temperature model for the electron and ion temperatures, while the pressure and density are described by a simplified relaxation equation. The pressure relaxation in the heating stage reduces the binding energy and facilitates the electron-driven ablation. The model is applied to estimate the ablation depth of an Al target irradiated by a subpicosecond laser pulse. It improves the agreement with the experimental data and provides a new explanation of the ablation process.     

Electron–electron interaction induced spin thermalization in quasi-low-dimensional spin valves

We study the spin thermalization, i.e., the inter-spin energy relaxation mediated by electron–electron scattering in small spin valves. When one or two of the dimensions of the spin valve spacer are smaller than the thermal coherence length, the direct spin energy exchange rate diverges and needs to be regularized by the sample dimensions. Here we consider two model systems: a long quasi-1D wire and a thin quasi-2D sheet.     

Nuclear spin–lattice relaxation and complex motion of macromolecules in solution

The NMR spectral densities of a complex motion consisting of a combination of anisotropic overall motion and internal motion have been derived. Two approximations of the equations derived for the cases of slow, J_slow (ω), and fast, J_fast (ω), internal motions are presented. These equations imply that reduction in spectral density of overall motion can be observed if the maxima of internal and overall motions spectral densities versus temperature are well separated, as for fast internal motion. Slow intramolecular motion influences the values of spectral densities of the overall motion if one of the two spins performs a motion, for example a proton in double minimum of the ¹⁵N-H?···?N hydrogen bond. The analysis presented reveals small differences between the temperature dependencies of spectral densities of the isotropic and anisotropic overall motions. The theory is illustrated by the ¹³C protonated carbon spin-lattice relaxation of α-cyclodextrin macromolecule, using the expected motional parameters: D _∥/D _⊥?≈?5 at room temperature and for a fast or slow internal motion.     

Characteristic features of the singlet–triplet mechanism of the electron spin polarization

Characteristic features of net chemically induced dynamic electron spin polarization (CIDEP) P _n in triplet–radical (TR) quenching are analyzed in detail within the framework of a general model that enables one to analyze CIDEP both numerically and analytically. This model also makes it possible to accurately describe the nonadiabatic transitions between the terms of the TR-pair spin Hamiltonian that lead to CIDEP generation. The proposed theory yields a simple analytical dependence of P _n on the parameters of the model. In particular, it is shown that, within a wide region of parameters, the dependence of P _n on the coefficient of relative TR diffusion D _r is described by a simple linear relation: \(P_n^{ - 1}\left( {{D_r}} \right) = {Q_0} + \overline {{q_n}} {D_r}\) (with Q ₀ and \({{q_n}}\) independent of D _r ). It is also demonstrated that the numerical and analytical results obtained are very useful in analysis of experimental data, as demonstrated by analyzing the experimental dependence of P _n on D _r .     

Control of electron spin–orbit anisotropy in pyramidal InAs quantum dots

We investigate the electron spin–orbit interaction anisotropy of pyramidal InAs quantum dots using a fully three-dimensional Hamiltonian. The dependence of the spin–orbit interaction strength on the orientation of externally applied in-plane magnetic fields is consistent with recent experiments, and it can be explained from the interplay between Rashba and Dresselhaus spin–orbit terms in dots with asymmetric confinement. Based on this, we propose manipulating the dot composition and height as efficient means for controlling the spin–orbit anisotropy.     

Manifestation of nuclear spin dependent P odd electron–nucleon interaction in atomic ytterbium

P odd effects caused by the nuclear spin dependent electron-nucleon interaction are considered. P-odd amplitudes are calculated for ¹S₀ → ³D_1,2 transitions in atomic ytterbium. This revised version was published online in August 2006 with corrections to the Cover Date.     

Thermally induced spin polarization and thermal conductivities in a spin–orbit-coupled two-dimensional electron gas

The thermal conductivities and spin polarization induced by the temperature gradient are investigated in a Rashba spin–orbit-coupled two-dimensional electron gas. In this spin–orbit-coupled system in the presence of nonmagnetic or magnetic electron–impurity scattering, the Wiedemann–Franz law still holds. However, the spin polarization induced by the temperature gradient strongly depends on the property of impurities. The components of spin accumulation both perpendicular and parallel to the direction of the temperature gradient, and the thermally induced charge Hall conductivity may be nonzero for magnetic disorders.     

Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons

Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons is found. The investigated spin–electron model is exactly solvable by the use of a transfer-matrix method after tracing out the degrees of freedom of mobile electrons delocalized over a couple of interstitial (decorating) sites. The exact ground-state phase diagram reveals an existence of five phases with different number of mobile electrons per unit cell, two of which are ferromagnetic, two are paramagnetic and one is antiferromagnetic. We have studied in particular the dependencies of compressibility and specific heat on temperature and electron density.     

Monte Carlo particle-based simulations of deep-submicron n-MOSFETs with real-space treatment of electron–electron and electron–impurity interactions

In modern deep-submicron devices, for achieving optimum device performance, the doping densities must be quite high. This necessitates a careful treatment of the short- and long-range electron–electron and electron–impurity interactions. We have shown before that by using a corrected Coulomb force, in conjunction with a proper cutoff range, one can properly account for the short-range portion of the force. Our approach naturally incorporates multi-ion contributions, local distortions in the scattering potential due to the movement of the free charges, and carrier-density fluctuations. The doping dependence of the low-field electron mobility obtained from 3D resistor simulations closely followed the experimental results, thus proving the correctness of our approach. Here, we discuss how discrete impurity effects affect the threshold voltage of ultra-small n-channel MOSFETs with gate lengths ranging from 50 to 100 nm. We find that the fluctuations in the threshold voltage increase with increasing the oxide thickness and substrate doping. The averaging effect over the width of the device leads to significantly smaller fluctuations in the threshold voltage for devices with larger gate width. The observed trends are in agreement with the experimental findings.     

Effects of electron–electron scattering in wide ballistic microcontacts

We consider effects of electron–electron scattering in wide ballistic microcontacts. Using a semiclassical Boltzmann equation, we obtain a positive correction to the Sharvin conductance that results from electron–electron collisions in the leads. The correction is linearly dependent on temperature at high temperatures T?eV$T?\mathit{eV}$ and proportional to |V|$\left|V\right|$ at high voltages eV?T$\mathit{eV}?T$. Magnetic field leads to strong suppression of this positive correction that results in a positive magnetoresistance in weak fields. As electron–electron scattering affects the conductance, it also influences the noise. At low voltages the noise is defined by the Nyquist relation and at high voltages it is related with the inelastic correction to the current by the Shottky formula δS=2eδI$\delta S=2e\delta I$.     

Theory of spin polarization in mesoscopic spin–orbit coupling systems

We establish a general formalism of the bulk spin polarization (BSP) and the current-based spin polarization (CSP) for mesoscopic ferromagnetic and spin–orbit interaction (SOI) semiconducting systems. Based on this formalism, we reveal the basic properties of BSP and CSP and their relationships. The BSP describes the intrinsic spin polarized properties of devices. The CSP depends on both intrinsic parameters of device and the incident current. For the non-spin-polarized incident current with the in-phase spin-phase coherence, CSP equals to BSP. We give analytically the BSP and CSP of several typical nanodevice models, ferromagnetic nanowire, Rashba nanowire and rings. These results provide basic physical behaviors of BSP and CSP and their relationships.     

µ−spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon

Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 10¹², 2.3 × 10¹⁵, and 4.5 × 10¹⁸ cm^?3) and aluminum (2 × 10¹⁴ and 2.4 × 10¹⁸ cm^?3) was examined. Measurements were made over the temperature range 4–300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic mAl atom in silicon.     

Computation of effective electron–phonon relaxation times in a high-Tc superconductor using the measured track radii

Energy relaxation processes after fast heavy ions passage through YBa₂Cu₃O_7−δ single crystal have been calculated. Effective times τ of electron–atom energy relaxation have been determined as fitting parameters for each pair of the measured track radius and the value of dE/dx. The latter quantity has been chosen over the interval of 20–40 keV/nm. The calculated results are compared with short pulse laser experiments and with Allen's theory, which predicts almost a linear dependence of τ on electron temperature.     

The electron spin resonance spectrum of a γ-irradiated single crystal of glycine

It is shown that γ rays act on glycine to give the free radical NH₃ ⁺-?H-CO₂ ^? which remains trapped in the solid. Electron spin resonance spectra from an irradiated single glycine crystal show marked anisotropy and it is deduced that the radicals are precisely oriented in the crystal lattice. The symmetry shown by the spectra is consistent with that of the crystal lattice. Despite overlapping of lines, the spectra due to the NH₃ ⁺-?H-CO₂ ^? radical have been interpreted in terms of electronnucleus coupling tensors for the N, the H_(C) and the three H_(N) nuclei, the latter being equivalent by virtue of a rotation or tunnelling of the -NH₃ ⁺ grouping. A qualitative interpretation of these tensors in terms of the electronic structure of the radical is given. This is consistent with the negative spin density on the H_(C) atoms and a positive spin density on the H_(N) atoms, as predicted by theoretical treatments. The radicals appear to be oriented in the lattice in approximately the same way as their parent molecules.