一种具有大带隙的各向异性二维光子晶体结构

提出一种新型各向异性材料(碲)二维光子晶体结构,应用有限时域差分法,对该结构特性进行数值分析,结果表明:通过优化结构参量,该结构具有较大的绝对光子禁带,禁带宽度为0.064ω_e(ω_e=2πc/a,a为晶格常量,c为光速),且该光子晶体的带隙具有很好的稳定性.     

光子晶体中四能级系统的量子相干效应

研究了处于光子带隙材料中的四能级原子系统的电磁感应透明、自发辐射和光子开关效应，分析了其稳态与瞬态特性, 发现特殊的模密度能够导致反常的吸收、色散、自发辐射及瞬态无反转增益, 并可以通过外加调制场进行控制.详细讨论了特殊频率处模密度的变化对透明窗口和光子开关效应的影响. 关键词： 光子带隙材料 电磁感应透明 模密度 光子开关     

Ta2O5/MgF2异质结构三维光子晶体的偏振性

为了在可见及近红外波段得到具有良好带隙结构的三维光子晶体,利用传输矩阵法分析了MgF₂、Ta₂O₅ 以及Ta₂O₅/MgF₂异质结构三维光子晶体的带隙性质.结果表明：Ta₂O₅/MgF₂异质结构三维光子晶体在820~1 020 nm的近红外波段TM模式下具有不受入射光方向影响的全方位光子带隙.该结构有望用于制作近红外光波段的偏振器件.     

YH,YD,YT分子基态的结构与势能函数

在Y的有效核势近似下, 对H分别选6-311++G(3df,2pd), AUG-cc-PVTZ, AUG-cc-PVQZ基组, 应用密度泛函理论的B3LYP方法, 优化计算了YH(D,T)分子基态的能量, 平衡结构, 和谐振频率.根据原子分子反应静力学原理, 导出了YH(D,T)分子基态的合理离解极限. 通过优化计算结果和已有的实验和理论数据对比, 得出LANL2TZ/AUG-cc-PVQZ混合基组为对体系进行计算的最优基组. 基于此, 在B3LYP/LANL2TZ/AUG-cc-PVQZ水平对YH(D,T)分子基态的势能面进行了单点能扫描. 并采用最小二乘法拟合得到了相应的Murrell-Sorbie势能函数. 计算出了这些分子的力常数(f₂, f₃, f₄)和光谱常数(B_e, α_e, ω_e, ω_eχ_e, D_e).结果与已有的实验数据符合得很好.     

利用电磁感应透明介质调控一维光子晶体带隙结构

应用传输矩阵法研究了由电磁感应透明材料构成的一维光子晶体带隙结构.计算结果表明:通过改变控制光的拉比频率可以调控一维光子晶体的禁带宽度.随着拉比频率的增加,EIT原子气体的相对折射率也随着增加.随着拉比频率的逐渐加大,光子晶体的禁带宽度变得越来越窄,但变化变得越来越慢,即增加相同大小的拉比频率其影响越来越小.     

7Li2(X1Σ+g)分子的振动能级、转动惯量及离心畸变常数

使用密度泛函理论B3LYP和B3P86，以及组态相互作用方法CCSD(T)和QCISD, 利用多个基组对⁷Li₂(X¹Σ⁺_g)分子的平衡核间距(R_e)、谐振频率(ω_e)和离解能(D_e)进行了计算, 发现在CCSD(T)/cc-PVQZ理论水平下得到的结果(R_{e相似文献}   

双模腔场中具有不同耦合常数的两原子多光子辐射谱

研究了与双模腔场具有不同耦合常数的两个二能级原子的多光子辐射谱,给出了双模多光子辐射谱的一般表达式.结果表明,当双模腔场分别处于不同数态时,虽然两原子与双模腔场之间具有不同的耦合常数,但对于任意的N₁和N₂(N_i(i＝1,2,)为模i腔场被每个原子吸收或发射的光子数),辐射谱总是关于共振频率ω₀对称分布;并且,当N₁＝N₂时,对于任意的数态光子数n₁和n₂交换,辐射谱不变.上述特点用解析方法给予了解释.计算了非简并双光子情况下的辐射谱,并得到了一些新结果.双模腔场中单原子及具有相同耦合常数的两原子辐射谱可从本文结果分别做为特例而得到.     

旋转对二维正方晶格介质柱内空结构光子晶体禁带的影响

采用平面波展开的方法计算了三种旋转操作下二维正方晶格各向异性材料(Te)介质柱内空结构光子晶体TE,TM模式能带.讨论了三种旋转操作对TE,TM模式带隙及完全光子禁带的影响.发现TM模式高频带隙与结构的旋转对称性有着密切的关系.而TE模式的带隙不仅受到晶体旋转对称性的影响同时也受到介质在x-y平面分布情况的影响.     

增加光子奇偶q相干态的高阶压缩效应

通过数值计算研究了增加光子奇q相干态a_q^+m|α>_q^o和增加光子偶q相干态a_q^+m|α>_q^e的高阶压缩效应.结果表明:当q较小时,态a_q^+m|α>_q^o和a_q^+m|α>_q^e都能呈现出强烈的奇次方阶压缩效应,但无偶次方阶压缩效应,而且奇次方阶压缩随m的增大而增强.当m=0时a_q^+m|α>_q^o和a_q^+m|α>_q^e为光场振幅偶次幂的最小测不准态,但当m≠0时它们不是光场振幅偶次幂的最小测不准态.     

确定ξ(2230)自旋的一种新方法

本文得到了过程e⁺e^－→J/ψ→γB(J^η)、B(J^η)→P_{1P2的矩的光子角分布,提供了确定ξ(2230)自旋的新途径.}     

Frequency‐sensitive switching control effect induced by two‐photon resonance in an EIT‐based layered medium

The optical response of an atomic vapor can be coherently manipulated by tunable quantum interference occurring in atomic transition processes. A periodic layered medium whose unit cells consist of a dielectric and an EIT (electromagnetically induced transparency) atomic vapor is designed for light propagation manipulation. Such an EIT‐based periodic layered medium exhibits a flexible frequency‐sensitive optical response, where a very small change in probe frequency can lead to a drastic variation of reflectance and transmittance. As the destructive quantum interference relevant to two‐photon resonance arises in EIT atoms interacting with both control and probe fields, the controllable optical processes that depend sensitively on the external control field will take place in this EIT‐based periodic layered medium. Such a frequency‐sensitive and field‐controlled optical behavior of reflection and transmission in the EIT photonic crystal can be applicable to designs of new devices such as photonic switches, photonic logic gates and photonic transistors, where one laser field can be controlled by the other one, and would have potential applications in the areas of integrated optical circuits and other related techniques (e.g., all‐optical instrumentations).     

Splitting of the electromagnetically induced transparency resonance on 85Rb atoms in strong magnetic fields up to the Paschen-Back regime

Electromagnetically induced transparency (EIT) resonance in strong magnetic fields of up to 1.7 kG has been investigated with the use of a 30-??m cell filled with an atomic rubidium vapor and neon as a buffer gas. The EIT resonance in the ?? system of the D₁ line of ⁸⁵Rb atoms has been formed with the use of two narrowband (??1 MHz) 795-nm diode lasers. The EIT resonance in a longitudinal magnetic field is split into five components. It has been demonstrated that the frequencies of the five EIT components are either blue- or red-shifted with an increase in the magnetic field, depending on the frequency ??_P of the probe laser. In has been shown that in both cases the ⁸⁵Rb atoms enter the hyperfine Paschen-Back regime in magnetic fields of >1 kG. The hyperfine Paschen-Back regime is manifested by the frequency slopes of all five EIT components asymptotically approaching the same fixed value. The experiment agrees well with the theory.     

V.L. Ginzburg’s elliptic screw polarization modes in an optical medium with linear birefringence and twist: Determination of their parameters by the method of Jones matrices

The effect of electromagnetically induced transparency (EIT) has been experimentally implemented for the first time for the (4S _1/2–4P _1/2–4S _1/2) Λ-system of potassium atom levels in a nanocell with a 770-nm-thick column of atomic vapor. It is shown that, at such a small thickness of the vapor column, the EIT resonance can be observed only when the coupling-laser frequency is in exact resonance with the frequency of the corresponding atomic transition. The EIT resonance disappears even if the coupling-laser frequency differs slightly (by ~50 MHz) from that of the corresponding atomic transition, which is due to the high thermal velocity of K atoms. The EIT resonance and related velocity selective optical pumping resonances caused by optical pumping (formed by the coupling) can be simultaneously recorded because of the small (~462 MHz) hyperfine splitting of the lower 4S _1/2 level.     

High contrast <Emphasis Type="Italic">D</Emphasis><Subscript>1</Subscript> line electromagnetically induced transparency in nanometric-thin rubidium vapor cell

The electromagnetically induced transparency (EIT) on the atomic D ₁ line of rubidium is studied using a nanometric-thin cell with atomic vapor column length in the range of L=400–800 nm. It is shown that the reduction of the cell thickness by four orders as compared with an ordinary cm-size cell still allows to form an EIT resonance for L=λ=794 nm with the contrast of up to 40%. Further reduction of thickness to L=λ/2 leads to significant reduction of EIT contrast, verifying that the key parameter for EIT in wavelength-scale-thickness cells is not the value of L itself but L/λ ratio. Remarkable distinctions of EIT formation in nanometric-thin and ordinary cells are demonstrated. Well-resolved splitting of the EIT resonance in a magnetic field for L=λ can be used for magnetometry with nanometric spatial resolution. The presented theoretical model well describes the observed results.     

Electromagnetically induced transparency resonances inverted in magnetic field

The phenomenon of electromagnetically induced transparency (EIT) is investigated in a Λ-system of the ⁸⁷Rb D ₁ line in an external transverse magnetic field. Two spectroscopic cells having strongly different values of the relaxation rates γ_rel are used: an Rb cell with antirelaxation coating (L ~ 1 cm) and an Rb nanometric- thin cell (nanocell) with a thickness of the atomic vapor column L = 795 nm. For the EIT in the nanocell, we have the usual EIT resonances characterized by a reduction in the absorption (dark resonance (DR)), whereas for the EIT in the Rb cell with an antirelaxation coating, the resonances demonstrate an increase in the absorption (bright resonances (BR)). We suppose that such an unusual behavior of the EIT resonances (i.e., the reversal of the sign from DR to BR) is caused by the influence of an alignment process. The influence of alignment strongly depends on the configuration of the coupling and probe frequencies as well as on the configuration of the magnetic field.     

Electromagnetically induced transparency in Λ-system involving D 2 line of Rb atoms confined in sub-micron columns

The effect of electromagnetically induced transparency (EIT) in a Λ-system formed by rubidium atoms contained in thin (10–60 μm) and extremely thin (0.3–5 μm) cells was studied experimentally. It was found that parameters of the EIT resonance degrade slowly in the case where the frequency of the coupling laser is in resonance with the D ₂ transition of rubidium, which enabled the registration of the EIT resonance in a record thin cell with a thickness of L = 390 nm. The specific features of EIT in extremely thin cells reveal themselves when the coupling laser has a frequency detuning Δ from the atomic transition. In this case, the width of the EIT resonance rapidly increases upon an increase in Δ at fixed L (an opposite effect takes place in centimeter-scale cells). It is shown that the width of the EIT resonance is inversely proportional to L in the case of fixed large detuning Δ. The nearly tenfold broadening of the EIT resonance for large values of detuning Δ is caused by the influence of atomic collisions with cell windows on dephasing rate of coherence. The expressions that allow the estimation of the EIT-resonance width for various values of detuning Δ and small values of thickness L are found.     

An analytical model for cross-Kerr nonlinearity in a four-level N-type atomic system with Doppler broadening

We present an analytical model for cross-Kerr nonlinear coefficient in a four-level N-type atomic medium under Doppler broadening.The model is applied to87 Rb atoms to analyze the dependence of the cross-Kerr nonlinear coefficient on the external light field and the temperature of atomic vapor.The analysis shows that in the absence of electromagnetically induced transparency(EIT)the cross-Kerr nonlinear coefficient is zero,but it is significantly enhanced when the EIT is established.It means that the cross-Kerr effect can be turned on/off when the external light field is on or off.Simultaneously,the amplitude and the sign of the cross-Kerr nonlinear coefficient are easily changed according to the intensity and frequency of the external light field.The amplitude of the cross-Kerr nonlinear coefficient remarkably decreases when the temperature of atomic medium increases.The analytical model can be convenient to fit experimental observations and applied to photonic devices.     

Electromagnetically-induced transparency in Doppler-broadened five-level systems

We study electromagnetically-induced transparency (EIT) of a probe field in a Doppler- broadened five-level K-type atomic system driven by three strong laser (coupling) fields. Effect of wave-vector mismatch occurring when the coupling field frequency is higher than that of the probe field frequency (λ _c < λ _p) are considered. Under the influence of the coherent coupling fields, the steady-state linear susceptibility of the probe laser shows that the system can have single or double or triple EIT windows depending on the amplitude and detuning of the coupling fields.     

Laser-noise-induced correlations and anti-correlations in electromagnetically induced transparency

High degrees of intensity correlation between two independent lasers were observed after propagation through a rubidium vapor cell in which they generate Electromagnetically Induced Transparency (EIT). As the optical field intensities are increased, the correlation changes sign (becoming anti-correlation). The experiment was performed in a room temperature rubidium cell, using two diode lasers tuned to the ⁸⁵Rb D₂ line (λ= 780 nm). The cross-correlation spectral function for the pump and probe fields is numerically obtained by modeling the temporal dynamics of both field phases as diffusing processes. We explored the dependence of the atomic response on the atom-field Rabi frequencies, optical detuning and Doppler width. The results show that resonant phase-noise to amplitude-noise conversion is at the origin of the observed signal and the change in sign for the correlation coefficient can be explained as a consequence of the competition between EIT and Raman resonance processes.     

Probe frequency- and field intensity-sensitive coherent control effects in an EIT-based periodic layered medium

A periodic layered medium, with unit cells consisting of a dielectric and an electromagnetically-induced transparency (EIT)-based atomic vapor, is designed for light propagation manipulation. Considering that a destructive quantum interference relevant to a two-photon resonance emerges in EIT-based atoms interacting with both control and probe fields, an EIT-based periodic layered medium exhibits a flexible frequency-sensitive optical response, where a very small variation in the probe frequency can lead to a drastic variation in reflectance and transmittance. The present EIT-based periodic layered structure can result in controllable optical processes that depend sensitively on the external control field. The tunable and sensitive optical response induced by the quantum interference of a multi-level atomic system can be applied in the fabrication of new photonic and quantum optical devices. This material will also open a good perspective for the application of such designs in several new fields, including photonic microcircuits or integrated optical circuits.