852.3 nm激光线共振激发Cs蒸气的荧光光谱

研究了Cs蒸气被单模半导体激光器的852.3 nm线激发产生的荧光光谱。由Cs,Cs₂的荧光及其强度确定了在受激Cs-Cs₂系统中的若干碰撞和辐射过程。高位态原子线是由Cs(6P_3/2)+ Cs(6P_3/2)到Cs(6D,8S)的碰撞能量合并形成的,Cs₂(B 1∏_u)带则由Cs(6P)+Cs₂(X 1Σ+_g)碰撞转移产生。通过激发转移、能量碰撞合并和Cs₂-Cs碰撞传能研究了6 2P原子的精细结构混合,得到了6P_3/2→6P_1/2碰撞转移速率系数是(5.2±2.1)×10-11 cm3·s-1,给出了过程Cs₂(B 1∏_u)+Cs(6S)→Cs₂(X 1Σ+_g)+Cs(6P_1/2)的速率系数是(1.0±0.4)×10-9 cm3·s-1。     

Cs(8D,9D)+Na(3S)碰撞激发转移过程

此文报道异核Cs(8D,9D)+Na(3S)→Cs(6P)+Na(3P)的碰撞能量转移过程.两步激发Cs原子到9D3/2(8D3/2)态.应用双调制技术探测Na(3PJ)原子发射的荧光,基态Na原子密度用光学吸收方法测量.得到了REP率系数,讨论了其它过程对率系数的影响.     

超高泵浦功率下的Xe(6p[1/2]0, 6p[3/2]2, 和6p[5/2]2)原子的能量转移过程

本文研究了Xe(6p[1/2]₀, 6p[3/2]₂, and 6p[5/2]₂)原子在聚焦条件下的动力学过程. 激发能级的原子密度在聚焦条件下会显著地增加,因此两个高激发态原子之间的energy-pooling碰撞的概率也会增加. 这种energy-pooling碰撞主要有三种类型. 第一种类型为energy-pooling碰撞导致的电离. 一旦将激发激光聚焦,就可以从侧面的窗口观察到非常明显的电离现象,不论激发能级是6p[1/2]₀、6p[3/2]₂或6p[5/2]₂能级. 这种电离的产生机理是energy-pooling电离或者一个Xe^*原子再吸收一个光子产生电离. 第二种类型为跨越较大能极差的energy-pooling碰撞. 当激发能级为6p[1/2]₀能级的情况下,两个6p[1/2]₀原子碰撞会产生一个5d[3/2]₁原子和一个6s''[1/2]₀原子. 第三种类型为跨越较小能级差的energy-pooling碰撞. 以5个二次产生的6p能级为上能级的荧光强度都变得更强,并且这些荧光的上升沿都变得更陡峭. 产生这些6p原子的主要机理是energy-pooling碰撞并非简单的碰撞弛豫. 基于理想气体原子之间的碰撞概率公式,推导出两个6p[1/2]₀原子的energy-pooling碰撞速率为6.39x10⁸s^-1. 此外,6s原子在聚焦条件下的密度也会增加. 因此所有的荧光曲线会因为辐射俘获效应而出现非常严重的拖尾.     

异核Na(3P)+Cs(6P)系统的碰撞能量合并

置于同一池中的钠原子和铯原子,分别被连续染料激光器和铯光谱灯激发到Na(3P),Cs(6P),Na(3P)原子密度由吸收等效宽度技术来测定。利用调制技术,分离出了由异核碰撞产生的荧光光谱。观察到了Na(3P)和Cs(6P)间的碰撞能量合并现象,并测定了其碰撞截面。 关键词：     

K-Cs混合蒸气中K(4P)+Cs(5D)碰撞能量合并

测量了K- Cs混合蒸气中碰撞能量合并过程K(4P) +Cs(5D)→Cs(6S) +K(4D ,6S)速率系数,测量是相对于已知速率系数的过程[即Cs(6P) +Cs(5D)→Cs(6S) +Cs(7DJ) ]进行的。利用激光光解K2 和Cs2分子,得到Cs(6P ,5D)和K(4P)态原子,探测直接由光解离产生的原子发射的与由碰撞转移而布居的原子激发态发射的荧光的相对强度,结合Cs(6P)和K(4P)态的有效寿命,得到异核碰撞能量合并速率系数分别为2. 6×10 -9和3 .6×10 -9cm3 ·s-1。讨论了其他过程对速率系数的影响。     

Cs(6DJ)+Cs(6S1/2)非弹性碰撞转移截面的测定

在9×1014～2.1×1015cm-3 Cs密度范围内,利用脉冲激光双光子激发Cs(6S1/2)到Cs(6D5/2)态,使用原子荧光光谱方法,通过三能级模型的速率方程分析,由对直接荧光和转移荧光的时间积分强度的测量,得到6D5/2→6D3/2精细结构转移截面为(2.1±0.4)×10-14cm2,而6D3/2态向6D以外态的转移截面为(1.6±0.4)×10-14cm2,它应是过程Cs(6 D3/2)+Cs(6S)→Cs(6P)+Cs(6P),6D3/2→7P3/2和6D3/2→7 P1/2碰撞转移截面之和.第二个实验可以得到6 D3/2→7P3/2和6D3/2→7 P1/2的碰撞转移截面.在1×1012～6×1012cm-3的低密度Cs蒸气中,激光双光子激发6S至6D3/2或6D5/2态,测量6DJ→6PJ'与7PJ"→6S1/2的时间积分荧光强度比,得到6D3/2→7P1/2与6D5/2→7R3/2的碰撞转移截面分别为(7.6±2.4)×10-15cm2与(1.6±0.5)×10-15cm2.由此得到碰撞能量合并的逆过程即[Cs(6D3/2)+Cs(6S1/2)→Cs(6P)+Cs(6P)]的转移截面为(1.3±0.4)×10-14cm2.     

Cs蒸气中的碰撞能量合并和6P3/2和6P1/2间的激发转移

通过激发转移和碰撞能量合并研究了Cs(62P)精细结构混合.单模半导体激光器激发基态Cs原子至6P3/2态,直接荧光是由6P3/2态发射的,敏化荧光是由精细结构碰撞转移和碰撞能量合并产生的.由相对荧光强度得到了转移截面σ(6P3/2→6P1/2)=(1.5±0.5)×10-15cm2,与其它实验结果进行了比较.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Comparative study of adsorption characteristics of Cs on the GaN(0001) and GaN(000) surfaces

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.     

Energy pooling to the level arising from collisions between pairs of metastable atoms

The energy-pooling rate coefficient for the process has been measured. The barium atoms were excited by a cw diode laser tuned to the frequency of the 791.3 nm intercombination line and the metastable atoms in the 6s5d state were produced due to radiative and collisional depopulation of the laser-excited 6s6p state. The measurements were performed at number densities of about and at 30 mbar argon as the buffer gas. Most of the barium ground state atoms in the excitation zone were transferred to the trip let metastable state at the laser pump power applied. The energy pooling rate coefficient was determined by comparing the fluorescence intensity of the barium 553.6 nm resonance line and the fluorescence intensity of the intercombination line 791.3 nm. In addition, the populations of the metastable atoms were probed with low intensity laser radiation from a single mode ring dye laser. The rate coefficient was found to be at . Received: 11 April 1997 / Revised: 24 September 1997 / Accepted: 10 December 1997     

The violet emissions produced by laser excitation of Na vapor in the 570–595 nm region

We have observed atomic Na and molecular Na₂ emissions in the violet region when Na vapor in a heatpipe (～10³—10¹⁶ atoms/cm³) is irradiated with a pulsed dye laser with output wavelength in the 570–597 nm region. The Na atomic emissions probably result from recombination of Na⁺ + e^- and energy-pooling involving highly excited atoms and molecules, while the diffuse violet emission bands are probably produced through collisions among excited Na atoms and Na₂ molecules.     

激发态Na和K原子间的碰撞能量合并

置于同一池中的Ｎａ原子和Ｋ原子，分别被连续染料激光器和Ｋ光谱灯激发型Ｎａ（３Ｐ），Ｋ（４Ｐ），Ｎａ（３Ｐ）原子密度由吸收等效宽度技术测定。利用调制技术，分离出了由异核碰撞产生的荧光光谱，观察到了Ｎａ（３Ｐ）和Ｋ（４Ｐ）间的磁能量合并现象，并测定了其碰撞截面。     

Cs(8S)态的碰撞转移和高位原子态的激发

在Cs蒸气中,二步激发Cs原子至8S态,研究了其碰撞转移和高位原子态的产生过程.在1016～1017 cm-3密度范围内,测量了碰撞激发转移8S 6S→6D 6S的速率系数.由测得的荧光强度随密度的变化关系,得到k6D=(2.4±0.5)×10-10 cm3·s-1.同时研究了碰撞能量合并过程5D 5D→nL 6S(nL=9D,11S,7F),5D态是由8S→7P→5D的辐射跃迁产生的.由以前测量过的6P 5D 6S 7D的转移速率系数以及6P态的原子密度,结合荧光强度比得到碰撞能量合并过程的速率系数,对于9D,11S和7F各态,其平均值分别为(6.4±3.2)×10-10,(1.0±0.5)×10-10和(8.4±4.2)×10-10 cm3·s-1.     

Rate coefficients measurement for the energy-pooling collisions Cs(5D) + Cs(5D) → Cs(6S) + Cs(nl = 9D, 11S, 7F)

We report experimental rate coefficients for the energy-pooling collisions Cs(5D) + Cs(5D) → Cs(6S) + Cs(nl = 9D, 11S, 7F). In the experiment the Cs(5D) state was populated via photodissociation of Cs₂ molecules using an argon-ion laser at wavelength 488.0 nm. We also consider the competing process 6P_1/2 + 7S → 6S + (nl = 9D, 11S, 7F) that might also populate 9D, 11S and 7F. An intermodulation technique was used to select the fluorescence contributions due only to the process 6P_1/2 + 7S → 6S + (nl = 9D, 11S, 7F). The excited atom (nl_J) density and spatial distribution were mapped by monitoring the absorption of a counterpropagating probe laser beam tuned to various transitions. The measured excited atom densities are combined with measured fluorescence ratios to yield rate coefficients for the energy-pooling collisions Cs(5D) + Cs(5D) → Cs(6S) + Cs(nl = 9D, 11S, 7F). The rate coefficients for nl = 9D, 11S, 7F are (4.1 ± 2.0) × 10⁻¹⁰ cm³ s⁻¹, (1.6 ± 0.8) × 10⁻¹⁰ cm³ s⁻¹ and (3.6 ± 1.8) × 10⁻¹⁰ cm³ s⁻¹, respectively. The contributions to the rate coefficients from other energy transfer processes are also discussed.     

钾原子的双光子共振三光子电离

在钾蒸气中用双光子共振三光子电离法测出了钾原子６Ｓ态的电离流随时间的衰减曲线。由电离流和多光子动力学参数的关系计算了６Ｓ态的光电离截面。当用７６６．４ｎｍ和７６９．８ｎｍ单光子激发时,通过能量积聚效应也可诱导钾原子得以电离。     

Collisions in a cesium hybrid optical and magnetic trap

A new scheme for trapping Cs atoms in a non dissipative trap has been developed. The trap involves both optical dipole forces and magnetic forces. This device is suitable for Cs atoms in the lowest energy Zeeman sublevel, thus avoiding the two-body inelastic collisions which prevented reaching Bose-Einstein condensation of Cs in purely magnetic traps. Furthermore, an additional magnetic field can be applied, allowing a fine tuning of the two-body elastic collision cross-section. We report on the experimental realization of such a trap and describe the characteristics of the trapped atomic sample. An analysis of the collisional regime is performed using measurements of the damping of the oscillatory modes of the trapped atom cloud.     

激发态Rb原子间的碰撞能量转移

脉冲激光器激发Rb原子到5P_1/2态,通过碰撞能量转移Rb(5P_1/2)+Rb(5S_1/2)Rb(5P_3/2)+Rb(5S_1/2)产生5P_3/2原子,研究了5P_1/2+5P_1/2,5P_3/2+5P_3/2,5P_1/2+5P_3/2的碰撞能量合并产生态的过程。5P_1/2态原子密度利用Rb空心阴极灯通过光学吸收方法得到,而5P_3/2态密度通过5P_3/25S_1/2(D2线)与5P_1/25S_1/2(D₁线)跃迁的荧光比得到。因为5P_3/2+5P_3/2或5P_1/2+5P_3/2的能量和与5D态的能量差远小于5P_1/2+5P_1/2与5D态的能量差,因此5P_3/2+5P_3/2,5P_1/2+5P_3/2的过程将影响5P_1/2+5P_1/2的测量结果。由于精细结构能量转移的时间比5D态寿命小得多,故5P_1/2+5P_1/2,5P_1/2+5P_3/2和5P_3/2+5P_3/2产生的5D5P荧光是同时产生的。在不同的池温下测量了积分荧光信号的相对强度,5P态原子有效寿命由辐射陷获的理论得到,结合激发态原子密度得到了5P_1/2+5P_1/2,5P_1/2+5P_3/2和5P_3/2+5P_3/2碰撞能量合并截面分别为7.810-15,2.9×10-14和3.1×10-14 cm2。结果表明5P_1/2+5P_3/2与5P_3/2+5P_3/2产生5D_3/2态的截面基本是相等的。     

全光学冷却与囚禁133Cs原子玻色-爱因斯坦凝聚的可能性

综述了近年来有关蒸发冷却¹³³Cs原子样品的实验进展,分析了磁囚禁¹³³Cs原子玻色爱因斯坦凝聚(BEC)的困难,并在此基础上提出了一个全光型冷却与囚禁¹³³Cs原子BEC的新方案.该方案主要由一个来自半导体激光(λ=0852μm)的倒金字塔形中空光束重力光学囚禁(pyramidal-hollow-beam gravito-optical trap,缩写为PHB GOT)和一个来自Ar⁺激光(λ=05013μm)的圆锥形中空光束重力光学囚禁(conical-hollow-beam gravito-optical trap,缩写为CHB GOT)组成.在PHB GOT中,冷原子经历了一个有效的中空光束感应的Sisyphus冷却(也即强度梯度冷却)和抽运光感应的几何冷却,原子温度将被从磁光囚禁(MOT)温度(约为60μK)冷却至几个光子反冲极限(约为2μK);而在Ar⁺中空光束囚禁(CHB GOT)中,冷原子将被Raman冷却或速度选择相干粒子数囚禁技术(velocity-selection coherent population trap,缩写为VSCPT)进一步冷却至光子反冲极限以下,并被激光频率高于原子共振频率的(也即蓝失谐的)covering光束压缩.我们就PHB冷却的动力学过程进行了Monte-Carlo模拟,并计算了Ar⁺中空光束囚禁¹³³Cs原子的光学势.研究结果表明,实现一个全光学冷却与囚禁的¹³³Cs原子BEC是可能的 关键词： 倒金字塔型中空光束重力光学囚禁 强度梯度冷却 氩离子中空光束囚禁 喇曼冷却 铯原子BEC