磁记忆检测的力磁耦合型磁偶极子理论及解析解

磁偶极子理论在缺陷漏磁场解释中被成功广泛使用.由于磁荷密度等参数不易定量,磁偶极子理论在应用中常常进行归一化处理,被认为不适用于对应力相关的磁记忆信号做量化分析.本文通过建立力磁耦合型磁偶极子理论模型,以适用于分析磁记忆检测中应力对磁信号的影响.基于铁磁学理论确定应力和磁场联合作用下的等效场强度,基于弱磁化状态的一阶近似,获得了各向同性铁磁材料微弱环境磁场下的应力磁化解析解.结合磁信号二维问题中矩形和V形磁荷分布假定,建立了光滑与破坏试件表面磁信号、矩形和V形表面缺陷所诱导磁信号的力磁耦合型磁偶极子理论分析模型,并获得其解析解.基于力磁耦合型磁偶极子理论的解析解,对拉伸实验中试件破坏前后的信号差异、矩形和V形表面缺陷诱导磁信号,以及磁信号的影响因素和规律等进行了详细分析.理论研究表明,基于本文理论模型的解析解可实现对磁记忆检测中的一些基本实验现象和规律的解释.     

Tb0.3Dy0.7Fe2合金磁畴偏转的滞回特性研究

研究了不同载荷作用下Tb_0.3Dy_0.7Fe₂合金在压磁和磁弹性效应中磁畴偏转的滞回特性. 基于Stoner-Wolhfarth模型的能量极小原理, 采用绘制自由能-磁畴偏转角度关系曲线的求解方法, 研究了压磁和磁弹性效应中载荷作用下的磁畴角度偏转和磁化过程, 计算分析了不同载荷作用下磁畴偏转的滞回特性. 研究表明, 压磁和磁弹性效应中磁畴偏转均存在明显的滞回、跃迁效应, 其中磁化强度的滞回效应来源于磁畴偏转的角度跃迁; 压磁效应中预加磁场的施加将增大磁化强度的滞回, 同时使滞回曲线向大压应力方向偏移; 磁弹性效应中磁畴偏转的滞回存在两个临界磁场强度, 不同磁场强度下合金具有不同的磁畴偏转路径和磁化滞回曲线, 临界磁场强度的大小取决于预压应力的施加. 理论分析对类磁致伸缩材料磁畴偏转模型的完善和材料器件的设计应用非常有意义.     

Tb0.3Dy0.7Fe2合金磁畴偏转研究

研究了Tb_0.3Dy_0.7Fe₂合金在压磁和磁 弹性效应中的磁畴偏转和磁导率特性. 基于Stoner-Wolhfarth 模型能量极小原理, 绘制了自由能与磁畴偏转角度的关系曲线, 研究了压应力和磁场载荷作用下磁畴角度的偏转特性, 计算分析了不同载荷作用下磁畴偏转的磁导率特性, 并与实验数据进行比较论证. 研究表明,应力和磁场的作用都将使磁畴方向[111]和[111]发生角度跃迁, 直观有效地解释了材料巨磁致伸缩效应的机理; 应力和磁场作用下磁畴的偏转将使材料磁导率呈减小趋势, 其中磁场能对磁导率的影响大于应力能, 这一现象在小载荷作用下尤为明显. 实验结果表明, 磁导率的计算数据与实验数据符合得较好, 验证了计算方法的正确性. 理论分析对Terfenol-D磁畴偏转模型的完善 和磁化过程中磁滞回线的绘制非常有意义.     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程.     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程. 关键词： Terfenol-D 磁机械效应 巨磁致伸缩效应 磁各向异性     

磁振子宏观效应以及热扰动场对反磁化的影响

热扰动导致的磁反转是越过能量势垒的不可逆反转,称为热助隧穿.本文研究Pr-Fe-B磁体热扰动导致的磁反转弛豫现象,反转磁矩与时间自然对数关系可表示为与能垒之间的关系,因此反磁化弛豫现象可用磁振子按能量的玻色统计分布率来解释,是磁振子宏观效应的体现.反磁化不可逆过程的临界尺寸为纳米级,与理论磁畴壁尺寸接近,证实热扰动反磁化经过磁畴壁形核去钉扎过程.在实空间反磁化耦合体积增大能减小磁振子隧穿的反磁化概率,热扰动场减小;热扰动后效场测量值与热扰动场计算值基本是一致的.温度升高,热扰动能量增大,由于耦合作用热扰动后效场有所减小,但热扰动后效场相对于矫顽力的作用增大.     

磁性材料的磁结构、磁畴结构和拓扑磁结构

首先简要地介绍了磁性材料中磁结构、磁畴结构和拓扑磁结构以及相互之间的关系. 一方面, 磁畴结构由材料的磁结构、内禀磁性和微结构因素决定; 另一方面, 磁畴结构决定了材料磁化和退磁化过程以及技术磁性. 拓扑学与材料物理、材料性能的联系越来越紧密. 最近的研究兴趣集中在一些拓扑磁性组态, 如涡旋、磁泡、麦纫、斯格米子等. 研究发现这些拓扑磁结构的拓扑性质与磁性能密切相关. 然后从尺寸效应、缺陷、晶界三个方面介绍国际学术界在磁结构、磁畴结构和拓扑磁结构方面的进展. 最后介绍了在稀土永磁薄膜材料的微观结构、磁畴结构和磁性能关系、交换耦合纳米盘中的拓扑磁结构及其动力学行为方面的工作. 通过对文献的评述, 得到以下结论: 开展各向异性纳米复合稀土永磁材料的研究对更好地利用稀土资源具有重要的意义. 可以有目的地改变材料的微结构, 可控地进行磁性材料的磁畴工程, 最终获得优秀的磁性能. 拓扑学的概念正在应用于越来越多的学科领域, 在越来越多的材料中发现拓扑学的贡献. 研究磁畴结构、拓扑磁性基态或者激发态的形成规律以及动力学行为对理解量子拓扑相变以及其他与拓扑相关的物理效应是十分重要的. 也会帮助理解不同拓扑学态之间相互作用的物理机制及其与磁性能之间的关系, 同时拓展拓扑学在新型磁性材料中的应用.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

不对称钴纳米环磁特性及涡旋态控制的蒙特卡罗模拟

利用Monte Carlo模拟方法研究不同外加磁场方向对不对称钴纳米环磁特性的影响.主要研究磁化反转过程中畴壁运动可控制机制、磁滞回线及涡旋态的形成.模拟结果表明:①不同的外加磁场方向对不对称钴纳米环在磁化反转过程中畴壁的运动和涡旋态的形成及稳定性有较大的影响;②可利用畴壁能的变化及外加磁场的方向控制纳米环畴壁的运动;③磁化反转过程中涡旋态的形成及稳定性存在明显的尺寸效应.     

具有不同交换偏置方向的外延FeGa/IrMn双层膜的磁各向异性与磁化翻转

采用磁控溅射方法在MgO(001)单晶衬底上制备了交换偏置分别沿着FeGa [100]和[110]方向的FeGa/IrMn外延交换偏置双层膜,研究了交换偏置取向对磁化翻转过程与磁化翻转场的影响.铁磁共振场的角度依赖关系的测量与拟合,表明样品存在不同取向的四重对称磁晶各向异性、单向交换磁各向异性和单轴磁各向异性的叠加.矢量磁光克尔效应测量表明交换偏置沿着[100]方向的样品在不同磁场方向下表现矩形、非对称和单边两步磁滞回线;交换偏置沿着[110]方向的样品在不同磁场方向下表现单边两步和双边两步磁滞回线.考虑不同交换偏置方向的畴壁形核和位移模型,能够很好地解释磁化翻转路径随磁场方向的变化规律和拟合磁化翻转场的角度依赖关系,表明交换偏置方向的改变使得畴壁形核能发生显著变化.     

Modeling of the loading path dependent magnetomechanical behavior of Galfenol alloy

The magnetomechanical behavior of single-crystal Galfenol alloy was found to be strongly dependent on the loading paths. An energy-based anisotropic domain rotation model, assuming that the interaction between domains can be ignored and the probability of the magnetic moment pointing along a particular direction is related to the free energy along this direction, is used to simulate the magnetostriction versus magnetic field and stress curve and to track the magnetic domain motion trail. The main reason for loading path dependent effect is the rotation/flipping of the magnetic domains under different loading paths. The effect of loading and unloading paths on 90° magnetic domain motion was studied by choosing different loading and unloading state and paths. The results show that prior loading magnetic field can make the 90° magnetic domains flip to the directions of 45° domains because the magnetic field is the driving force to make the domains rotate, and the final loading state and the loading path both have great influence on the motion of 90° magnetic domains.     

Ion drag forces and magnetomechanical effect

Ion flows (ion drag forces) acting on macroscopic-size particles play a significant role in a plasma containing macroparticles. It is shown that ion drag forces can explain the magnetomechanical effect. The formula is derived for determining the dependence of the moment of the magnetomechanical effect on the type and pressure of the gas, tube radius, current, and magnetic field. This formula is in satisfactory agreement with experimental data for discharges in argon and neon with a relatively low magnetization of electron motion. For a high magnetization, the measured values of the moment of the magnetomechanical effect exceed the calculated values, which can be due to the effect of magnetic field nonuniformity and inhomogeneity of the plasma near the solenoid ends.     

Nanomechanical magnetization reversal

The dynamics of the ferromagnetic order parameter in thin magnetic films is strongly affected by the magnetomechanical coupling at certain resonance frequencies. By solving the equation of motion of the coupled mechanical and magnetic degrees of freedom we show that the magnetic field induced magnetization switching can be strongly accelerated by the lattice and illustrate the possibility of magnetization reversal by mechanical actuation.     

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.     

Modified magnetomechancial model in the constant and low intensity magnetic field based on J-A theory

The existing magnetomechancial models cannot explain the different experimental phenomena when the ferromagnetic specimen is respectively subjected to tension and compression stress in the constant and low intensity magnetic field,especially in the compression case. To promote the development of magnetomechancial theory, the energy conservation equation, effective magnetic field equation, and anhysteretic magnetization equation of the original Jiles-Atherton(J-A)theory are elucidated and modified, an equation of the local equilibrium status is employed and the differential expression of the modified magnetomechancial model based on the modified J-A theory is established finally. The effect of stress and plastic deformation on the magnetic parameters is analyzed. An excellent agreement is achieved between the theoretic predictions by the present modified model and the previous experimental results. Comparing with the calculation results given by the existing models and experimental results, it is seen indeed that the modified magnetomechanical model can describe the different magnetization features during tension-release and compression-release processes much better, and is the only one which can accurately reflect the experimental observation that the magnetic induction intensity reverses to negative value with the increase of the compressive stress and applied field.     

Magnetoelasticity and elasticity of Fe85Ga15 single crystals under coupled magnetomechanical loading

The effect of coupled magnetomechanical loading on magnetostriction and compressive strain of Fe-Ga alloys has been investigated. A shift from negative to positive magnetostriction was observed with increase in compressive stress on a Fe₈₅Ga₁₅ single crystal. Non-linear behavior of the compressive strain in different magnetic fields was observed during the compressive loading and unloading process. These phenomena can clearly be explained by a model based on the magnetic-domain-switching process. The Young's modulus can also be obtained from the measured stress-strain curves.     

磁畴壁手性和磁斯格明子的拓扑性表征及其调控

磁性斯格明子由于拓扑的保护性,具有很高的稳定性和较小的临界驱动电流,有望应用于未来的赛道存储器件中.而在中心对称体系,由于偶极作用的各向同性,磁泡的拓扑性和螺旋度都呈现出多样性的特征.其中非平庸的磁泡即等同于磁性斯格明子.我们通过近期实验结果,结合微磁学模拟的方法,发现在中心对称体系中磁斯格明子的拓扑性会受到体系垂直各向异性的调控.另外在加磁场的演变过程中,会很大程度上依赖于基态畴的畴壁特性.磁场的倾斜或者一定的面内各向异性也会改变磁斯格明子的形态.通过对材料的基态磁结构及磁各向异性的调节,辅助以面内分量的控制,可以对基态磁畴、进而对磁斯格明子的拓扑性实现调控.这对磁斯格明子在电流驱动存储器件中的应用具有重要意义.